真空微电子压力传感器的研究
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摘要
压力是过程自动化五大参量中的首要参量，作为压力信息获取的核心元件的压力传感器，在石油、化工、冶炼、电力、仪器仪表、机械、汽车、智能结构、航空航天、国防等领域中是必不可少、量大面广的基础元件，它已经成为现代信息技术的重要组成部分，在当代科技领域中占有十分重要的地位。特别是自从80年代末微型电子机械系统(MEMS)技术的崛起，从根本上改变了许多传统压力传感器的设计思想和制造方法，为压力传感器的微型化、集成化、智能化的研究提供了新的技术基础。现在，世界各国已将探索集成化、新原理、新结构、新功能、高性能的压力传感器及系统作为研究开发压力传感器的重点。
本文在重庆市科技“十五”项目的资助下，提出利用微电子技术、MEMS技术和真空电子技术相结合的方法，研究一种带过保护功能的真空微电子压力传感器，该压力传感器由带过保护的场致发射阴极锥尖阵列、弹性阳极膜、绝缘层、真空微腔所构成，具有温度稳定性好、抗辐射、快响应、高灵敏、体积小、二次仪表简单、可批量生产等优点，具有广泛的应用市场。
本论文的主要研究工作如下：
1、在查阅了国内外大量文献资料的基础上，对各种压力传感器的结构、制造方法、研究现状和发展趋势作了深入细致地总结分析。
2、研究了真空微电子压力传感器的相关基础理论，从理论上分析了半导体场致发射电流与半导体功函数及其与温度的关系。
3、研究了真空微电子压力传感器的力学和电学特性、传感器结构及相应的计算与模拟。
4、提出和完成了自保护功能的真空微电子压力传感器的结构设计。
5、进行了传感器的工艺设计和工艺研究，成功地研制出了传感器实验样品。其场致发射阴极锥尖阵列密度达24000个／mm~2，起始发射电压为1～5V，反向电压25V，当正向电压为5V时，单尖发射电流为0.2nA，压力灵敏度为98.5mV／bar。
6、进行了传感器的测试和标定技术研究，并对测试结果进行了分析和讨论。
Pressure is the most important parameter in the five-parameter in autocontrol procedure. As the pressure information-acquiring device; the pressure sensor is the necessary device being used in the field of oil industry, chemical industry, metallurgical industry, electrical power industry, instruments and meters industry, automobile industry, smart structure, aerospace, defense. And its quantity is greatly demanded. It is one of the important parts of the modern information technology. With the development of Micro-Electro-Mechanical-Systems (MEMS) from the end of 80s in last century, the basic idea of designing and fabricating pressure sensors has changed greatly. These changes pave the way to realizing micromation, integration and intelligence of pressure sensors. And the MEMS technology provides new measurement in the design and fabrication. The worldwide research on pressure sensors focuses on integration, new principle, new structure, new function and high performance.
Our research is supported by the Fifteen-Project of Chongqing municipality. In the paper, we put forward the combination of micro electronic technology, MEMS technology and vacuum micro electronic technology to develop a micro electronic pressure sensor with overload protection. The pressure sensor consists.of elastic anode membrane, isolation layer, vacuum micro cavity and field emission catelectrode tip array with overload protection. Such pressure sensor has many advantages, such as high temperature stability, radiation resistance, fast response, high sensitivity, small volume, simple secondary instruments and bulk production. ;
The research items are listed as bellow.
1. The structures and fabrication technology of different pressure sensors are analyzed after carefully studying the relevant documents.
2. After studying the relevant basic theories, the relationship between the field emission current and the work function of semiconductor and the temperature is analyzed.
3. The mechanical property and electricity property of the vacuum micro electronic pressure sensor is studied and relevant computation and simulation are carried out.
4. The design of overload protection is put forward in the vacuum micro electronic pressure senor.
5. Study is carried out to develop the relevant technology design and technology
research. A prototype of such sensor is fabricated. The density of its field emission catelectrode tip is about 24000tip/mm2, the onset emission voltage is 0.5 ~ IV, the backward voltage is larger than 25V, the current of single tip is 0.2nA, the sensitivity is 98.5mV/bar. 6. The testing and calibrating method is studied and the testing result is analyzed.
本文在重庆市科技“十五”项目的资助下，提出利用微电子技术、MEMS技术和真空电子技术相结合的方法，研究一种带过保护功能的真空微电子压力传感器，该压力传感器由带过保护的场致发射阴极锥尖阵列、弹性阳极膜、绝缘层、真空微腔所构成，具有温度稳定性好、抗辐射、快响应、高灵敏、体积小、二次仪表简单、可批量生产等优点，具有广泛的应用市场。
本论文的主要研究工作如下：
1、在查阅了国内外大量文献资料的基础上，对各种压力传感器的结构、制造方法、研究现状和发展趋势作了深入细致地总结分析。
2、研究了真空微电子压力传感器的相关基础理论，从理论上分析了半导体场致发射电流与半导体功函数及其与温度的关系。
3、研究了真空微电子压力传感器的力学和电学特性、传感器结构及相应的计算与模拟。
4、提出和完成了自保护功能的真空微电子压力传感器的结构设计。
5、进行了传感器的工艺设计和工艺研究，成功地研制出了传感器实验样品。其场致发射阴极锥尖阵列密度达24000个／mm~2，起始发射电压为1～5V，反向电压25V，当正向电压为5V时，单尖发射电流为0.2nA，压力灵敏度为98.5mV／bar。
6、进行了传感器的测试和标定技术研究，并对测试结果进行了分析和讨论。
Pressure is the most important parameter in the five-parameter in autocontrol procedure. As the pressure information-acquiring device; the pressure sensor is the necessary device being used in the field of oil industry, chemical industry, metallurgical industry, electrical power industry, instruments and meters industry, automobile industry, smart structure, aerospace, defense. And its quantity is greatly demanded. It is one of the important parts of the modern information technology. With the development of Micro-Electro-Mechanical-Systems (MEMS) from the end of 80s in last century, the basic idea of designing and fabricating pressure sensors has changed greatly. These changes pave the way to realizing micromation, integration and intelligence of pressure sensors. And the MEMS technology provides new measurement in the design and fabrication. The worldwide research on pressure sensors focuses on integration, new principle, new structure, new function and high performance.
Our research is supported by the Fifteen-Project of Chongqing municipality. In the paper, we put forward the combination of micro electronic technology, MEMS technology and vacuum micro electronic technology to develop a micro electronic pressure sensor with overload protection. The pressure sensor consists.of elastic anode membrane, isolation layer, vacuum micro cavity and field emission catelectrode tip array with overload protection. Such pressure sensor has many advantages, such as high temperature stability, radiation resistance, fast response, high sensitivity, small volume, simple secondary instruments and bulk production. ;
The research items are listed as bellow.
1. The structures and fabrication technology of different pressure sensors are analyzed after carefully studying the relevant documents.
2. After studying the relevant basic theories, the relationship between the field emission current and the work function of semiconductor and the temperature is analyzed.
3. The mechanical property and electricity property of the vacuum micro electronic pressure sensor is studied and relevant computation and simulation are carried out.
4. The design of overload protection is put forward in the vacuum micro electronic pressure senor.
5. Study is carried out to develop the relevant technology design and technology
research. A prototype of such sensor is fabricated. The density of its field emission catelectrode tip is about 24000tip/mm2, the onset emission voltage is 0.5 ~ IV, the backward voltage is larger than 25V, the current of single tip is 0.2nA, the sensitivity is 98.5mV/bar. 6. The testing and calibrating method is studied and the testing result is analyzed.
引文
[1] 皮广禄．国外传感技术的现状与发展(Ⅰ)。传感器世界，VOL．4．1998．No．12．pp 1
[2] 皮广禄．国外传感技术的现状与发展(Ⅱ)．传感器世界，VOL．5．1999．No．12．pp 1
[3] 于凌宇．当代传感器新技术应用与展望．传感器世界．VOL．4．1998．No．11．pp 1
[4] 国家计划委员会．国际科学技术委员会．国家经济贸易委员会．九十年代我国经济发展的关键技术．1993年8月
[5] 机械工业部科技与质量司．机械工业“九五”国家重点科技规划．传感器技术研究．1994年11月
[6] 刘迎春编著．传感器原理设计与应用．北京．国防科技大学出版社．第二版1995年
[7] H. C. Lee and R. S. Huang. Transducers' 91. San fanciso, pp241--244
[8] J. C. Jiang et al.. MIcrocavity Vacuum Tube pressure sensor for robot tactile sensing. Transducers'91. San fanciso, pp 238-240
[9] 刘广玉等编著．新型传感器技术及应用．北京．航空航天大学出版社．1995年
[10] 高国伟．MEMS—压力传感器的革命性新技术．传感器世界．VOL．3．1997．No．2．pp 2
[11] 强锡富．传感器．北京．机械工业出版社．1989．6
[12] 石英利等编著．传感器技术．上海．同济大学出版社．1995．7
[13] 李炳乾，朱长纯．刘君华．光激光拾自谐振传感器的光学特性及优化设计．半导体光电，Vol．20．No．1．Feb．1999．pp7-10．
[14] D. W. Satchel and J. C. Greenwood. A thermally-excited silicon accelerometer. Sensors and Actuators ,Volume 17, Issues 1-2. May 1989. pp 241-245.
[15] 樊尚春．刘广玉．硅谐振梁式压力传感器模拟计算．http://www．cii．com．cn／fwq／jswz／jswz18.htm．
[16] 刘君华．真空微电子传感器的进展．传感器技术．1994年5期pp 1
[17] 周世勋编．量子力学．北京．高等教育出版社．1979
[18] 刘学悫编著．阴极电子学．北京．科学出版社．1980
[19] 朱长纯．微型真空力敏器件的研究．传感技术学报．1994年4期．pp 6
[20] Busts H. H. Vacuum microelectronics-- 1992 J. Micromachin. Microeng. Vol.2 ( 1993 ). pp 43
[21] Hunt C.E. et al. Structure and electrical characteristics of silicon field emission microelectronics devices. IEEE Trans. Electron. Devices, ED-38. 1991. pp 2309
[22] 张雨印编．半导体物理．成都．电子科技大学出版社．1989
[23] 惠恒荣编著．统计热力学．成都．成都电讯工程学院出版社．1988
[24] 赖祖武等编著．抗辐射电子学．北京．国防工业出版社．1998．7
[25] 陈博贤．刘光冶．苏杰．朱敏慧．夏善红．真空微电子学三极管中电子渡越时间的近似计算方法．第六届中国真空微电子学与场致发射学术年会论文集．1999年3月30日-31日．北京．pp47-52
[26] 夏善红．陶新听．苏杰．贾水生．祝侃．陈绍凤．真空微电子压力传感器封装技术的实验研究．第六届全田敏感元件与传感器学术会议．1999年10月28-30日．北京．pp 32-45
[27] 温志渝等．真空微电子触觉传感器场致发射阵列的研究．重庆大学学报．VOL．21．1998． No．4．pp 12
[28] 薛增泉编著．电子发射与电子能谱．北京大学出版社．1993
[29] Sprindt C.A.. et al.. Field emitter arrays for vacuum microelectronics IEEE Trans. Electron. Devices. ED-38. 1991. pp 2355
[30] H.H.Busta. The field emitter triode as a displacement/pressure sensor. J. Micromachin. Microeng. Vol.3. 1993. pp49
[31] 唐国洪．真空微电子管的研制．电子器件．VOL．18．1995．No．2．pp 81
[32] 谢国章编著．微机械的制造与应用．北京．电子工业出版社．1991
[33] 张福范编著．弹性薄板．第二版．北京．科学出版社．1984
[34] 杨绪灿等编著．弹性力学．北京．高等教育出版社．1987
[35] 庄同曾编著．集成电路制造技术—原理与实践．电子工业出版社．北京．1987．10． pp419—441
[36] 温殿忠．硅在KOH溶液和EPW中各向异性腐蚀的异同．传感技术学报．1995年第2期， pp 83
[37] K.Bean. Anisotropic etching of silicon. IEEE Trans. Electron Devices. ED-25. 1978. pp 1185
[38] X. Wu and W.Ko. A study on compensating undercutting in anisotropic etching of silicon. 4th Int. Conf. Solid-state Sensors and Actuators (Transducers 87). Tokyo. Japan 2-5 1987. pp 126
[39] B. Prers and W. Sansen . Compensation structures for convex corner micromachining in silicon. Sensors and Actuators. A21-A23. 1990. pp 1036
[40] G. K. Mayer et al.. Fabrication of non-undetected convex corners in anisotropic etching of (100)-silicon in aqueous KOH with respect to novel micro mechanic element. J. Electrochem. Soc..Vol.37. 1990. No.12. pp 3947
[41] K.sato. Anisotropic-etching simulation system as design tool for fabricating 3-D
microstructures. Japan. 1989. pp 19
[42]费业泰编著．误差理论与数据处理．北京．机械工业出版社．第四版．2000年5月
[43]王武义编著．误差原理与数据处理．哈尔滨．哈尔滨工业大学出版社．2001年10月
[44]徐科军编著．传感器动态性的实用研究方法．合肥．中国科学技术大学出版．1999．2
[45]赵守忠编著．传感器技术及其应用．合肥．中国科学技术大学出版．1997年5月
[2] 皮广禄．国外传感技术的现状与发展(Ⅱ)．传感器世界，VOL．5．1999．No．12．pp 1
[3] 于凌宇．当代传感器新技术应用与展望．传感器世界．VOL．4．1998．No．11．pp 1
[4] 国家计划委员会．国际科学技术委员会．国家经济贸易委员会．九十年代我国经济发展的关键技术．1993年8月
[5] 机械工业部科技与质量司．机械工业“九五”国家重点科技规划．传感器技术研究．1994年11月
[6] 刘迎春编著．传感器原理设计与应用．北京．国防科技大学出版社．第二版1995年
[7] H. C. Lee and R. S. Huang. Transducers' 91. San fanciso, pp241--244
[8] J. C. Jiang et al.. MIcrocavity Vacuum Tube pressure sensor for robot tactile sensing. Transducers'91. San fanciso, pp 238-240
[9] 刘广玉等编著．新型传感器技术及应用．北京．航空航天大学出版社．1995年
[10] 高国伟．MEMS—压力传感器的革命性新技术．传感器世界．VOL．3．1997．No．2．pp 2
[11] 强锡富．传感器．北京．机械工业出版社．1989．6
[12] 石英利等编著．传感器技术．上海．同济大学出版社．1995．7
[13] 李炳乾，朱长纯．刘君华．光激光拾自谐振传感器的光学特性及优化设计．半导体光电，Vol．20．No．1．Feb．1999．pp7-10．
[14] D. W. Satchel and J. C. Greenwood. A thermally-excited silicon accelerometer. Sensors and Actuators ,Volume 17, Issues 1-2. May 1989. pp 241-245.
[15] 樊尚春．刘广玉．硅谐振梁式压力传感器模拟计算．http://www．cii．com．cn／fwq／jswz／jswz18.htm．
[16] 刘君华．真空微电子传感器的进展．传感器技术．1994年5期pp 1
[17] 周世勋编．量子力学．北京．高等教育出版社．1979
[18] 刘学悫编著．阴极电子学．北京．科学出版社．1980
[19] 朱长纯．微型真空力敏器件的研究．传感技术学报．1994年4期．pp 6
[20] Busts H. H. Vacuum microelectronics-- 1992 J. Micromachin. Microeng. Vol.2 ( 1993 ). pp 43
[21] Hunt C.E. et al. Structure and electrical characteristics of silicon field emission microelectronics devices. IEEE Trans. Electron. Devices, ED-38. 1991. pp 2309
[22] 张雨印编．半导体物理．成都．电子科技大学出版社．1989
[23] 惠恒荣编著．统计热力学．成都．成都电讯工程学院出版社．1988
[24] 赖祖武等编著．抗辐射电子学．北京．国防工业出版社．1998．7
[25] 陈博贤．刘光冶．苏杰．朱敏慧．夏善红．真空微电子学三极管中电子渡越时间的近似计算方法．第六届中国真空微电子学与场致发射学术年会论文集．1999年3月30日-31日．北京．pp47-52
[26] 夏善红．陶新听．苏杰．贾水生．祝侃．陈绍凤．真空微电子压力传感器封装技术的实验研究．第六届全田敏感元件与传感器学术会议．1999年10月28-30日．北京．pp 32-45
[27] 温志渝等．真空微电子触觉传感器场致发射阵列的研究．重庆大学学报．VOL．21．1998． No．4．pp 12
[28] 薛增泉编著．电子发射与电子能谱．北京大学出版社．1993
[29] Sprindt C.A.. et al.. Field emitter arrays for vacuum microelectronics IEEE Trans. Electron. Devices. ED-38. 1991. pp 2355
[30] H.H.Busta. The field emitter triode as a displacement/pressure sensor. J. Micromachin. Microeng. Vol.3. 1993. pp49
[31] 唐国洪．真空微电子管的研制．电子器件．VOL．18．1995．No．2．pp 81
[32] 谢国章编著．微机械的制造与应用．北京．电子工业出版社．1991
[33] 张福范编著．弹性薄板．第二版．北京．科学出版社．1984
[34] 杨绪灿等编著．弹性力学．北京．高等教育出版社．1987
[35] 庄同曾编著．集成电路制造技术—原理与实践．电子工业出版社．北京．1987．10． pp419—441
[36] 温殿忠．硅在KOH溶液和EPW中各向异性腐蚀的异同．传感技术学报．1995年第2期， pp 83
[37] K.Bean. Anisotropic etching of silicon. IEEE Trans. Electron Devices. ED-25. 1978. pp 1185
[38] X. Wu and W.Ko. A study on compensating undercutting in anisotropic etching of silicon. 4th Int. Conf. Solid-state Sensors and Actuators (Transducers 87). Tokyo. Japan 2-5 1987. pp 126
[39] B. Prers and W. Sansen . Compensation structures for convex corner micromachining in silicon. Sensors and Actuators. A21-A23. 1990. pp 1036
[40] G. K. Mayer et al.. Fabrication of non-undetected convex corners in anisotropic etching of (100)-silicon in aqueous KOH with respect to novel micro mechanic element. J. Electrochem. Soc..Vol.37. 1990. No.12. pp 3947
[41] K.sato. Anisotropic-etching simulation system as design tool for fabricating 3-D
microstructures. Japan. 1989. pp 19
[42]费业泰编著．误差理论与数据处理．北京．机械工业出版社．第四版．2000年5月
[43]王武义编著．误差原理与数据处理．哈尔滨．哈尔滨工业大学出版社．2001年10月
[44]徐科军编著．传感器动态性的实用研究方法．合肥．中国科学技术大学出版．1999．2
[45]赵守忠编著．传感器技术及其应用．合肥．中国科学技术大学出版．1997年5月