稀土掺杂SiC_xN_y薄膜制备及其性质研究
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摘要
SiCN是一种新颖的硅基光电材料,而稀土掺杂是一种进一步优化SiCN光学性能的有益尝试,我们制备并研究了稀土掺杂与未掺杂SiCN薄膜。
(1) SiCxNy薄膜的制备和性质研究
利用射频溅射法在Si衬底上制备了SiCxNy薄膜,并利用X-射线衍射(XRD)、红外吸收谱(FTIR)和X-射线光电子谱(XPS)对薄膜的结构、成份及化学键合状态进行了分析。结果表明,室温制备的SiCN薄膜为非晶状态,并形成了Si-C、Si-N和C-N键；通过改变N2/Ar比,衬底沉积温度,溅射功率等参数可以改变薄膜中的Si,C,N三元素的比例。进而改变薄膜的光学等性质。而在高温下(衬底温度为800℃),薄膜中含有SiCxNy的晶体成分,薄膜表面变得粗糙,SiCxNy薄膜具有较好的光致发光性能。
(2)SiCN薄膜基电致发光器件的制备和性质研究
在P型硅和ITO基底上反应溅射沉积了200nm左右的SiC,,Ny薄膜,并镀上Al电极形成三明治结构,研究了各种N2分压下器件的电学和发光性质研究表明随着N2分量的增加,器件由双向导电变为单向导电进而最后变为绝缘态,而EL现象由双向导通发光变为单向导通发光,最后变为不发光,建立模型解释了这种现象。发现SiCxNy由于其复杂的网络结构,具有很宽的发光包,发光光谱涵盖400～700nm范围。
(3)稀土掺杂SiCN薄膜的制备和后处理及发光性质研究
分别在N2和NH3气氛下共溅射法制备了样品,发现稀土Tb掺杂样品具有很好的绿光效应。研究了不同温度和气氛环境下退火处理的样品,发现800℃下NH3处理的样品具有最强的肉眼可见的强绿光发射,空气中700。C以下退火的样品呈现强蓝绿光发射,而碳热处理的样品,1250℃下分解为SiC纳米晶和其他团簇,800℃下退火的样品是最适合的退火温度。用XRD, IR, XPS, PL, PLE等研究了样品分解机制和发光的能量传递机理。
SiCN is a novel silicon based photoelectric material, Rare earth doped and undoped SiCN films were prepared and investigated.
(1) SiCxNy films were prepared on Si substrates by rf sputtering, and the structures, compositions, and chemical bonds were investigated by XRD, FTIR, and XPS. The results have demonstrated that the room-temperature deposited SiCN films were amorphous, containing a network of Si-C, Si-N, and C-N bonds. The ratio of constituents of the three elements (Si, C, and N) in the films can be tuned by the partial pressure ratios of N2/Ar, the substrate temperatures, and sputtering powers, and this type of change in the compositions change the optical properties of thin films. While, when the temperature increase up to 800℃, the films will contain some crystalling components of SiCxNy with a coarse surface. The films show a good properties of electroluminescence (EL).
(2) The preparation and properties of of SiCN-film-based EL devices were investigated by using a ITO/SiCN/Al sandwich structure. The effect of the partial pressure ratios of N2 on the electronic and luminescent properties of the devices were disscused. The results have demostrated that the devices changed from bidirectional to unilateral, even Insulating, accompanying with the EL changing from a bidirectional luminscence to an unilateral one, finally a non-luminous one. A model were proposed to illuminestrate this phenomenon. The investigation demostrated that SiCxNy shows a broad luminescent band ranging from 400-700nm due to the Complex network structure.
(3) The preparation, post-treatment, and photoluminescence (PL) properties of rare earth doped SiCN films were investigated. Two types of Tb-doped SiCN films were deposited by cosputtering of Tb flake and SiC target under N2 and NH3 ambience. The prepared Tb-doped samples show a good green light emission. The annealing treatment under different temperatures and gas ambiences have indicated that the samples treated under NH3 ambience at 800℃and show the strongest visible green light emission, and the samples annealed in air at only 700℃show the strongest ones.However, the samples treated under carbothermal ambience at 800℃show the best PL behaviour. Once the annealing temperature increase up to 1250℃, the films will decomposited into SiC nanocrystal and other nanoclusters. Furthermore, the mechanism of the decomposition of the samples and energy transfer of PL were discussed by using XRD, IR, XPS, PL, and PLE.
(1) SiCxNy薄膜的制备和性质研究
利用射频溅射法在Si衬底上制备了SiCxNy薄膜,并利用X-射线衍射(XRD)、红外吸收谱(FTIR)和X-射线光电子谱(XPS)对薄膜的结构、成份及化学键合状态进行了分析。结果表明,室温制备的SiCN薄膜为非晶状态,并形成了Si-C、Si-N和C-N键；通过改变N2/Ar比,衬底沉积温度,溅射功率等参数可以改变薄膜中的Si,C,N三元素的比例。进而改变薄膜的光学等性质。而在高温下(衬底温度为800℃),薄膜中含有SiCxNy的晶体成分,薄膜表面变得粗糙,SiCxNy薄膜具有较好的光致发光性能。
(2)SiCN薄膜基电致发光器件的制备和性质研究
在P型硅和ITO基底上反应溅射沉积了200nm左右的SiC,,Ny薄膜,并镀上Al电极形成三明治结构,研究了各种N2分压下器件的电学和发光性质研究表明随着N2分量的增加,器件由双向导电变为单向导电进而最后变为绝缘态,而EL现象由双向导通发光变为单向导通发光,最后变为不发光,建立模型解释了这种现象。发现SiCxNy由于其复杂的网络结构,具有很宽的发光包,发光光谱涵盖400～700nm范围。
(3)稀土掺杂SiCN薄膜的制备和后处理及发光性质研究
分别在N2和NH3气氛下共溅射法制备了样品,发现稀土Tb掺杂样品具有很好的绿光效应。研究了不同温度和气氛环境下退火处理的样品,发现800℃下NH3处理的样品具有最强的肉眼可见的强绿光发射,空气中700。C以下退火的样品呈现强蓝绿光发射,而碳热处理的样品,1250℃下分解为SiC纳米晶和其他团簇,800℃下退火的样品是最适合的退火温度。用XRD, IR, XPS, PL, PLE等研究了样品分解机制和发光的能量传递机理。
SiCN is a novel silicon based photoelectric material, Rare earth doped and undoped SiCN films were prepared and investigated.
(1) SiCxNy films were prepared on Si substrates by rf sputtering, and the structures, compositions, and chemical bonds were investigated by XRD, FTIR, and XPS. The results have demonstrated that the room-temperature deposited SiCN films were amorphous, containing a network of Si-C, Si-N, and C-N bonds. The ratio of constituents of the three elements (Si, C, and N) in the films can be tuned by the partial pressure ratios of N2/Ar, the substrate temperatures, and sputtering powers, and this type of change in the compositions change the optical properties of thin films. While, when the temperature increase up to 800℃, the films will contain some crystalling components of SiCxNy with a coarse surface. The films show a good properties of electroluminescence (EL).
(2) The preparation and properties of of SiCN-film-based EL devices were investigated by using a ITO/SiCN/Al sandwich structure. The effect of the partial pressure ratios of N2 on the electronic and luminescent properties of the devices were disscused. The results have demostrated that the devices changed from bidirectional to unilateral, even Insulating, accompanying with the EL changing from a bidirectional luminscence to an unilateral one, finally a non-luminous one. A model were proposed to illuminestrate this phenomenon. The investigation demostrated that SiCxNy shows a broad luminescent band ranging from 400-700nm due to the Complex network structure.
(3) The preparation, post-treatment, and photoluminescence (PL) properties of rare earth doped SiCN films were investigated. Two types of Tb-doped SiCN films were deposited by cosputtering of Tb flake and SiC target under N2 and NH3 ambience. The prepared Tb-doped samples show a good green light emission. The annealing treatment under different temperatures and gas ambiences have indicated that the samples treated under NH3 ambience at 800℃and show the strongest visible green light emission, and the samples annealed in air at only 700℃show the strongest ones.However, the samples treated under carbothermal ambience at 800℃show the best PL behaviour. Once the annealing temperature increase up to 1250℃, the films will decomposited into SiC nanocrystal and other nanoclusters. Furthermore, the mechanism of the decomposition of the samples and energy transfer of PL were discussed by using XRD, IR, XPS, PL, and PLE.
引文
[1]R. Riedel, A. Kienzle, W. Dressier, L. Ruwisch, J. Bill, F. Aldinger, A silicoboron carbonitride ceramic stable to 2,000 degrees C, Nature, (1996) 382:796-8
[2]A. Badzian, T. Badzian, Recent developments in hard materials, Int J Refract Met H, (1997) 15:3-12
[3]C.-Z. Wang, E.-G. Wang, Q. Dai, First principles calculations of structural properties of beta-Si[sub 3-n]C[sub n]N[sub 4](n=0,1,2,3), J. Appl. Phys., (1998) 83:1975-8
[4]J. E. Lowther, Structural stability of some possible phases of SiC2N4, Phys. Rev. B, (1999) 60:11943
[5]R. Riedel, A. Greiner, G. Miehe, W. Dressier, H. Fuess, J. Bill, F. Aldinger, The first crystalline solids in the ternary Si-C-N system, Angewandte Chemie-International Edition in English, (1997) 36:603-6
[6]R. N. Musin, D. G. Musaev, M. C. Lin, Quantum-Chemical Study of the Structure and Properties of Hypothetical Superhard Materials Based on the Cubic Silicon-Carbon Nitrides, The Journal of Physical Chemistry B, (1999) 103:797-803
[7]E. Betranhandy, L. Capou, S. F. Matar, C. El-Kfoury, First principles search of hard materials within the Si-C-N ternary system, Solid State Sciences, (2004) 6:315-23
[8]C. W. Chen, M. H. Lee, L. C. Chen, K. H. Chen, Structural and electronic properties of wide band gap silicon carbon nitride materials-a first-principles study, Diam. Relat. Mat., (2004) 13:1158-65
[9]D. Y. Lin, C. F. Li, Y. S. Huang, Y. C. Jong, Y. F. Chen, L. C. Chen, C. K. Chen, K. H. Chen, D. M. Bhusari, Temperature dependence of the direct band gap of Si-containing carbon nitride crystalline films, Phys. Rev. B, (1997)56:6498
[10]K. H. Chen, J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y. F. Chen, Y. S. Huang (1999) in Abernathy C. R., Baca A., Buckley D. N., Chen K. H., Kopf R., Sah R. E. (eds), Seattle, Wa
[11]A. Y. Liu, M. L. Cohen, Structural properties and electronic structure of low-compressibility materials: beta-Si3N4 and hypothetical beta-C3N4, Phys. Rev. B, (1990) 41:10727
[12]L. C. Chen, K. H. Chen, J. J. Wu, D. M. Bhusari, M. C. Lin, N. Hari Singh, M.Sc, Ph.D (2001) Silicon-Based Material and DevicesAcademic Press, Burlington
[13]V. M. Ng, M. Xu, S. Y. Huang, J. D. Long, S. Xu, Assembly and photoluminescence of SiCN nanoparticles, Thin Solid Films, (2006) 506:283-7
[14]E. Q. Xie, Z. W. Ma, H. F. Lin, Z. M. Zhang, D. Y. He, Preparation and characterization of SiCN films, Opt. Mater., (2003) 23:151-6
[15]S. Komatsu, Y. Hirohata, S. Fukuda, T. Hino, T. Yamashina, T. Hata, K. Kusakabe, PREPARATION AND CHARACTERIZATION OF REACTIVELY SPUTTERED SICXNY FILMS, Thin Solid Films, (1990) 193:917-23
[16]Z. X. Cao, Nanocrystalline silicon carbonitride thin films prepared by plasma beam-assisted deposition, Thin Solid Films, (2001) 401:94-101
[17]S. K. Mishra, H. Gaur, P. K. P. Rupa, L. C. Pathak, Deposition of nanostructured Si-C-N superhard coatings by rf magnetron sputtering, J. Vac. Sci. Technol. B, (2006) 24:1311-7
[18]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, V. M. Ng, J. D. Long, P. Yang, Growth and visible photoluminescence of SiCxNy/AIN nanoparticle superlattices, Physica E, (2006) 35:81-7
[19]M. A. Fraga, M. Massi, I. C. Oliveira, H. S. Maciel, S. G. dos Santos, R. D. Mansano, Nitrogen doping of SiC thin films deposited by RF magnetron sputtering, J. Mater. Sci.-Mater. Electron., (2008) 19:835-40
[20]J. P. Wang, Y. H. Lu, Y. G Shen, Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films, Appl. Surf. Sci., (2010) 256:1955-60
[21]Y. Q. Fu, C. Q. Sun, H. J. Du, B. B. Yan, Crystalline carbonitride forms harder than the hexagonal Si-carbonitride crystallite, J. Phys. D-Appl. Phys., (2001) 34:1430-5
[22]L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen, Y. C. Jong, Y. S. Huang, Crystalline silicon carbon nitride:A wide band gap semiconductor, Appl. Phys. Lett., (1998) 72:2463-5
[23]L. C. Chen, C. K. Chen, D. M. Bhusari, et al. (1997) in Abernathy C. R., Amano H., Zolper J. C. (eds)Mater. Res. Soc. Symp. Proc., San Francisco, Ca
[24]L. C. Chen, K. H. Chen, S. L. Wei, P. D. Kichambare, J. J. Wu, T. R. Lu, C. T. Kuo, Crystalline SiCN:a hard material rivals to cubic BN, Thin Solid Films, (1999) 356:112-6
[25]S. Zhu, H. W. White (1998) in Johnson R. N., Lee W. Y., Pickering M. A., Sheldon B. W. (eds), Boston, Ma
[26]D. H. Zhang, Y. Gao, J. Wei, Amorphous SiCN films prepared by ECR-CVD technique for photoconductive detectors, Photonics Technology into the 21st Century:Semiconductors, Microstructures, and Nanostructures, (1999) 3899:428-33 552
[27]C. Y. Wen, J. J. Wu, H. J. Lo, L. C. Chen, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin, Methylamine growth of SiCN films using ECR-CVD, Chemical Processing of Dielectrics, Insulators and Electronic Ceramics, (2000) 606:115-20 308
[28]S. L. Sung, C. H. Tseng, F. K. Chiang, X. J. Guo, X. W. Liu, H. C. Shih, A novel approach to the formation of amorphous carbon nitride film on silicon by ECR-CVD, Thin Solid Films, (1999) 340:169-74
[29]C. Y. Wen, J. J. Wu, H. J. Lo, L. C. Chen, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin (1999) in Jones A. C., Veteran J., Mullin D., Cooper R., Kaushal S. (eds), Boston, Ma
[30]D. H. Zhang, Y. Gao, J. Wei, Z. Q. Mo, Influence of silane partial pressure on the properties of amorphous SiCN films prepared by ECR-CVD, Thin Solid Films, (2000) 377:607-10
[31]H. C. Lo, J. J. Wu, C. Y Wen, T. S. Wong, S. T. Lin, K. H. Chen, L. C. Chen, Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation, Diam. Relat. Mat., (2001) 10:1916-20
[32]D. Sarangi, R. Sanjines, A. Karimi, Effect of silicon doping on the mechanical and optical properties of carbon nitride thin films, Thin Solid Films, (2004) 447-448:217-22
[33]I. Ferreira, E. Fortunato, P. Vilarinho, A. S. Viana, A. R. Ramos, E. Alves, R. Martins, Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques, J. Non-Cryst. Solids, (2005)352:1361-6
[34]I. Ferreira, E. Fortunato, P. Vilarinho, A. S. Viana, A. R. Ramos, E. Alves, R. Martins, Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques, J. Non-Cryst. Solids, (2006)352:1361-6
[35]A. Izumi, K. Oda, Deposition of SiCN films using organic liquid materials by HWCVD method, Thin Solid Films, (2006)501:195-7
[36]A. Limmanee, M. Otsubo, T. Sato, S. Miyajima, A. Yamada, M. Konagai, Study of the structural properties of a-SiCN: H films using hexamethyldisilazane for high-quality silicon surface passivation, Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on, (2006) 1: 1227-30
[37]A. Izumi, T. Nakayamada, Formation of highly transparent SiCN films prepared by HWCVD, Advances in Science and Technology, (2008) 54:223-6
[38]T. Nakayamada, K. Matsuo, Y. Hayashi, A. Izumi, Y Kadotani, Evaluation of corrosion resistance of SiCN films deposited by HWCVD using organic liquid materials, Thin Solid Films, (2008) 516:656-8
[39]A. Izumi, T. Nakayamada, Formation of highly transparent SiCN films prepared by HWCVD, Adv Sci Tech, (2009) 54:223-6
[40]E. G Wang, C. Z. Wang, C. F. Chen, Y. Chen (1997) in Siegal M. P., Milne W I., Jaskie J. E. (eds), Boston, Ma
[41]S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, J. J. Ho, Cubic single-crystalline Sil-x-yCxNy films with mirror face prepared by RTCVD, Electrochem. Solid State Lett., (2001) 4:G91-G3
[42]S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, J. J. Ho, Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition, J. Electron. Mater., (2002) 31:1341-6
[43]N. M. Park, S. H. Kim, G. Y. Sung, Band gap engineering of SiCN film grown by pulsed laser deposition, J. Appl. Phys., (2003) 94:2725-8
[44]X. B. Yan, B. K. Tay, G Chen, S. R. Yang, Synthesis of silicon carbide nitride nanocomposite films by a simple electrochemical method, Electrochem. Commun., (2006) 8:737-40
[45]N. Nakayama, Y Tsuchiya, S. Tamada, K. Kosuge, S. Nagata, K. Takahiro, S. Yamaguchi, Mc, STRUCTURAL-PROPERTIES OF AMORPHOUS-CARBON NITRIDE FILMS PREPARED BY REACTIVE RF-MAGNETRON SPUTTERING, Jpn. J. Appl. Phys. Part 2-Lett., (1993) 32:L1465-L8
[46]H. Lutz, M. Bruns, F. Link, H. Baumann (1998), Garmisch Partenki, Germany
[47]H. Lutz, M. Bruns, F. Link, H. Baumann, Surface- and microanalytical characterization of silicon-carbonitride thin films prepared by means of radio-frequency magnetron co-sputtering, Thin Solid Films, (1998)332:230-4
[48]D. V. Shtansky, E. A. Levashov, A. N. Sheveiko, J. J. Moore, The structure and properties of Ti-B-N, Ti-Si-B-N, Ti-Si-C-N, and Ti-Al-C-N coatings deposited by magnetron sputtering using composite targets produced by self-propagating high-temperature synthesis (SHS), Journal of Materials Synthesis and Processing, (1998) 6:61-72
[49]H. Lutz, M. Bruns, F. Link, H. Baumann, Synthesis of silicon carbonitride thin films by means of r.f.-sputtering and ion implantation, Surf. Coat. Technol., (1999) 119:419-23
[50]J. J. Wu, C. T. Wu, Y. C. Liao, T. R. Lu, L. C. Chen, K. H. Chen, L. G Hwa, C. T. Kuo, K. J. Ling, Deposition of silicon carbon nitride films by ion beam sputtering, Thin Solid Films, (1999) 356:417-22
[51]X. C. Wu, Y. Y. Wang, Properties of a-SiCxNy:H films produced by reactive-sputtering, Acta Phys. Sin., (1999)48:134-9
[52]H. Gnaser, Negative cluster ions in sputtering of Si, SiC and graphite:Abundance distributions, energy spectra and fragmentation precesses, Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms, (2000) 164:705-14
[53]X. M. He, T. N. Taylor, R. S. Lillard, K. C. Walter, M. Nastasi, Bonding structure and properties of ion enhanced reactive magnetron sputtered silicon carbonitride films, J. Phys.-Condes. Matter, (2000) 12: L591-L7
[54]J. Wei, Y. Gao, D. H. Zhang, P. Hing, Z. Q. Mo, Growth of sign films by magnetron sputtering, Surf. Eng., (2000) 16:225-8
[55]X. C. Xiao, Y. W. Li, L. X. Song, X. F. Peng, X. F. Hu, Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N-2 and Ar, Appl. Surf. Sci., (2000) 156:155-60
[56]X. C. Xiao, L. X. Song, W. H. Jiang, X. F. Peng, X. F. Hu, Influence of sputtering process on the deposition and optical properties of SiCN films, J. Inorg. Mater., (2000) 15:717-21
[57]Z. Alizadeh, K. B. Sundaram, S. Seal, The effect of nitrogen on the chemistry of sputter-deposited SiCxNy films, Appl. Surf. Sci., (2001) 183:270-7
[58]T. Berlind, N. Hellgren, M. P. Johansson, L. Hultman, Microstructure, mechanical properties, and wetting behavior of Si-C-N thin films grown by reactive magnetron sputtering, Surf. Coat. Technol., (2001) 141:145-55
[59]X. F. Peng, L. X. Song, J. Le, X. F. Hu (2001), Santa Clara, California
[60]X. F. Peng, L. X. Song, J. Meng, Y. Z. Zhang, X. F. Hu, Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target, Appl. Surf. Sci., (2001) 173:313-7
[61]H. Y. Lin, Y. C. Chen, C. Y. Lin, Y P. Tong, L. G. Hwa, K. H. Chen, L. C. Chen, Field emission of nanostructured amorphous SiCN films deposited by reactive magnetron sputtering of SiC in CH4/N-2 atmosphere, Thin Solid Films, (2002) 416:85-91
[62]X. F. Peng, L. X. Song, J. Le, X. F. Hu, Spectra characterization of silicon carbonitride thin films by reactive radio frequency sputtering, J. Vac. Sci. Technol. B, (2002) 20:159-63
[63]J. Vlcek, M. Kormunda, J. Cizek, V. Perina, J. Zemek, Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films, Surf. Coat. Technol., (2002) 160:74-81
[64]X. C. Wu, R. Q. Cai, P. X. Yan, W. M. Liu, J. Tian, SiCN thin film prepared at room temperature by r.f. reactive sputtering, Appl. Surf. Sci., (2002) 185:262-6
[65]G. Radnoczi, G. Safran, Z. Czigany, T. Berlind, L. Hultman, Structure of DC sputtered Si-C-N thin films, Thin Solid Films, (2003) 440:41-4
[66]J. Vlcek, M. Kormunda, J. Cizek, Z. Soukup, V. Perina, J. Zemek, Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties, Diam. Relat. Mat., (2003) 12:1287-94
[67]M. Bruns, U. Geckle, V Trouillet, M. Rudolphi, H. Baumann (2004), Anaheim, CA
[68]J. J. Li, W. T. Zheng, C. Z. Gu, Z. S. Jin, Electron field emission from silicon tip arrays coated by magnetron sputtering carbon nitride film, Solid State Commun, (2004) 132:253-7
[69]E. J. Liang, J. W. Zhang, J. Leme, C. Moura, L. Cunha, Raman analysis of Si-C-N films grown by reactive magnetron sputtering, Thin Solid Films, (2004) 469-70:410-5
[70]E. J. Liang, J. W. Zhang, J. Leme, C. Moura, L. Cunha (2004), San Diego, CA
[71]T. T. Sun, Y. Q. Fu, J. Wei, H. J. Du, Nitrogen contents on tribological properties of magnetron sputtered SiCN coatings,14th Congress of International Federation for Heat Treatment and Surface Engineering, Vols 1 and 2, Proceedings, (2004) 25:854-7
[72]K. B. Sundaram, Z. Alizadeh, R. M. Todi, V. H. Desai, Investigations on hardness of rf sputter deposited SiCN thin films, Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process., (2004) 368:103-8
[73]M. Xu, V. M. Ng, S. Y. Huang, S. Y. Xu, Low-temperature growth and photoluminescence of SiCN nanoparticle film by consecutive RF magnetron sputtering, Surf. Rev. Lett., (2004) 11:515-9
[74]M. Bruns, U. Geckle, V. Trouillet, M. Rudolphi, H. Baumann, Tailored stoichiometries of silicon carbonitride thin films prepared by combined radio frequency magnetron sputtering and ion beam synthesis, J. Vac. Sci. Technol. A, (2005) 23:1114-9
[75]P. Gao, J. Xu, Y. Piao, W. Y. Ding, D. H. Wang, X. L. Deng, C. Dong (2005), Qingdao, PEOPLES R CHINA
[76]S. Y. Huang, S. Xu, J. D. Long, Z. H. Dai, Y. P. Sun, Synthesis and property study of nanoparticle quaternary semiconductor SiCAIN films with co-sputtering under lower temperature, Surf. Rev. Lett., (2005) 12:397-400
[77]F. S. Liu, W. J. Ma, Q. L. Liu, J. K. Liang, J. Luo, L. T. Yang, G. B. Song, Y. Zhang, G. H. Rao, Photoluminescence and characteristics of terbium-doped AlN film prepared by magnetron sputtering, Appl. Surf. Sci., (2005) 245:391-9
[78]T. Usui, H. Nasu, T. Watanabe, H. Shibata, T. Oki, M. Hatano, Electromigration diffusion mechanism of electroplated copper and cold/hot two-step sputter-deposited aluminum-0.5-wt % copper damascene interconnects, J. Appl. Phys., (2005) 98:6
[79]R. M. Todi, A. P. Warren, K. B. Sundaram, K. R. Coffey, X-ray photoelectron spectroscopy analysis of oxygen annealed radio frequency sputter deposited SiCN thin films, J. Electrochem. Soc., (2006) 153: G640-G3
[80]M. Xu, S. Xu, V. M. Ng, S. Y. Huang, J. W. Chai, J. D. Long, Visible photoluminescence in SiCN nanoparticle films grown by plasma rf magnetron sputtering, Int. J. Mod. Phys. B, (2006) 20:73-83
[81]X. W. Du, Y. Fu, J. Sun, P. Yao, L. Cui, Intensive light emission from SiCN films by reactive RF magnetron sputtering, Mater. Chem. Phys., (2007) 103:456-60
[82]P. Gao, J. Xu, Y. Piao, W. Y. Ding, D. H. Wang, X. L. Deng, C. Dong, J. X. Peng Gao, Yong Piaoa, Wanyu Ding, Dehe Wang, Xinlu Deng and Chuang Donga, Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering, Surf. Coat. Technol., (2007) 201: 5298-301
[83]H. Hoche, D. Allebrandt, M. Bruns, R. Riedel, C. Fasel (2007), Nagasaki, JAPAN
[84]S. L. Ma, B. Xu, G. Z. Wu, Y. F. Wang, F. Ma, D. Y. Ma, K. W. Xu, T. Bell (2007), Nagasaki, JAPAN
[85]S. K. Mishra, C. Shekhar, P. K. P. Rupa, L. C. Pathak, Effect of pressure and substrate temperature on the deposition of nano-structured silicon-carbon-nitride superhard coatings by magnetron sputtering, Thin Solid Films, (2007) 515:4738-44
[86]H. Hoche, D. Allebrandt, M. Bruns, R. Riedel, C. Fasel, Relationship of chemical and structural properties with the tribological behavior of sputtered SiCN films, Surf. Coat. Technol., (2008) 202:5567-71
[87]S. L. Ma, B. Xu, G Z. Wu, Y. F. Wang, F. Ma, D. Y. Ma, K. W. Xu, T. Bell, Microstructure and mechanical properties of SiCN hard films deposited by an arc enhanced magnetic sputtering hybrid system, Surf. Coat. Technol., (2008) 202:5379-82
[88]S. K. Mishra, A. S. Bhattacharyya, Effect of substrate temperature on the adhesion properties of magnetron sputtered nano-composite Si-C-N hard thin films, Mater. Lett., (2008) 62:398-402
[89]R. H. Wei (2008), San Diego, CA
[90]A. S. Bhattacharyya, G. C. Das, S. Mukherjee, S. K. Mishra, Effect of radio frequency and direct current modes of deposition on protective metallurgical hard silicon carbon nitride coatings by magnetron sputtering, Vacuum, (2009) 83:1464-9
[91]Z. Y. Chen, H. F. Lin, J. Y. Zhou, Z. W. Ma, E. Q. Xie, IR studies of SiCN films deposited by RF sputtering method, Journal of Alloys and Compounds, (2009) 487:531-6
[92]W. L. Li, J. L. Yang, Y. Zhao, W. D. Fei, Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target, Journal of Alloys and Compounds, (2009) (In Press, Accepted Manuscript)
[93]W. L. Li, J. L. Yang, Y. Zhao, W. D. Fei, Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target, Journal of Alloys and Compounds, (2009) 482:317-9
[94]S. K. Mishra, Nano and Nanocomposite Superhard Coatings of Silicon Carbonitride and Titanium Diboride by Magnetron Sputtering, Int. J. Appl. Ceram. Technol., (2009) 6:345-54
[95]E. Tomasella, L. Spinelle, A. Bousquet, F. Rebib, M. Dubois, C. Eypert, J. P. Gaston, J. Cellier, T. Sauvage, Structural and Optical Investigations of Silicon Carbon Nitride Thin Films Deposited by Magnetron Sputtering, Plasma Process. Polym., (2009) 6:S11-S6
[96]J. Wan, Z. B. Ma, H. Cao, Z. H. Wu, J. H. Wang, Preparation of SiCN crystals using microwave plasma CVD assisted by pulsed nitrogen ion beam sputtering, New Carbon Mater., (2010) 25:48-52
[97]K. H. Chen, J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y. F. Chen, Y. S. Huang, Wide band gap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition, Thin Solid Films, (1999) 356:205-9
[98]A. Y. Liu, M. L. Cohen, Structural properties and electronic structure of low-compressibility materials: beta-Si_{3}N_{4} and hypothetical beta-C_{3}N_{4}, Phys. Rev. B, (1990) 41:10727
[99]W. R. Chang, Y. K. Fang, S. F. Ting, S. F. Chen, C. Y. Lin, S. B. Hwang, C. N. Chang, The contact characteristics of SiCN films for opto-electrical devices applications, J. Electron. Mater., (2004) 33:181-4
[100]W. R. Chang, Y. K. Fang, S. F. Ting, Y. S. Tsair, C. N. Chang, C. Y. Lin, S. F. Chen, The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications, IEEE Electron Device Lett., (2003) 24:565-7
[101]S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, J. J. Ho, A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications, IEEE Electron Device Lett., (2002) 23:142-4
[102]Z. G. He, G. Carter, J. S. Colligon, Ion-assisted deposition of C-N and Si-C-N films, Thin Solid Films, (1996)283:90-6
[103]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, J. D. Long, Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer, J. Non-Cryst. Solids, (2006) 352:5463-8
[104]X. W. Du, Y. Fu, J. Sun, P. Yao, The effect of annealing atmosphere on photoluminescent properties of SiCN films, Surf. Coat. Technol., (2007) 201:5404-7
[105]X. W. Du, Y. Fu, J. Sun, P. Yao, The evolution of microstructure and photoluminescence of SiCN films with annealing temperature, J. Appl. Phys., (2006) 99:4
[106]H. L. Chang, C. T. Kuo (2000), Kowloon, Peoples R China
[107]L. Y. Yang, D. H. Zhang, C. Y. Li, R. Liu, P. W. Lu, P. D. Foo, A. T. S. Wee, Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration, Thin Solid Films, (2006) 504:265-8
[108]L. Zhang, Y. W. Chen, C. Y. Li, C. Li, L. Y. Wong, H. Y. Li, S. Balakumar, H. S. Park, Defect study on Nanoglass (R) E porous ultra-low k material (k similar to 2.2) for ultra-large-scale integration applications, Mater. Sci. Semicond. Process, (2004) 7:89-93
[109]J. Martin, T. Stephens, F. Huang, et al., Integration of SiCN as a low kappa etch stop and Cu passivation in a high performance Cu/low kappa interconnect, Proceedings of the Ieee 2002 International Interconnect Technology Conference, (2002):42-4
[110]L. Y. Yang, D. H. Zhang, C. Y. Li, P. W. Lu, P. D. Foo, SiCN and Ta/TaN barriers for Cu/Ultra low k integration in 0.13 mu m technology, P Soc Photo-Opt Ins, (2004) 5774:454-7 654
[111]D. H. Zhang, L. Y. Yang, C. Y. Li, P. W. Lu, P. D. Foo, Ta/SiCN bilayer barrier for Cu-ultra low k integration, Thin Solid Films, (2006) 504:235-8
[112]Z. Alizadeh, K. B. Sundaram, Electrical studies on amorphous silicon carbide nitride films, Journal of Materials Science Letters, (2002) 21:7-8
[113]M. A. Fraga, M. Massi, I. C. Oliveira, N. C. Cruz, S. G. D. S. Filho, Electrical and Mechanical Properties of Post-Annealed SiCxNy Films, Materials Science Forum (2009) 615-617:327-30
[114]Y. F. Zhang, X. Zhao, X. F. Cheng, Y. G. Mu, Density functional Study on electronic properties of P-doped spinel silicon carbon nitride, J. Solid State Chem., (2008) 181:2113-6
[115]Y. C. Chou, S. Chattopadhyaya, L. C. Chen, Y. F. Chen, K. H. Chen (2002), Granada, Spain
[1]H. O. Pierson (1999), Second Edition edn. Noyes, New York
[2]D. M. Mattox (2003) William Andrew Publishing, New York
[3]K. Wasa, S. Hayakawa (1992) Noyes, New York
[4]K. S. S. Harsha (2005) Elsevier Science & Technology, Oxford
[5]D. M. Mattox (1998) Film Formation, Adhesion, Surface Preparation and Contamination Control Noyes Westwood
[6]C. F. Powell, J. H. Oxley, J. M. Blocher (1996) Wiley, New York
[7]R. F. Bunshah (1994),2nd Edition edn. Noyes, Park Ridge, NJ
[8]田民波(2006)薄膜技术与薄膜材料.清华大学出版社,北京
[9]郑伟涛(2003)薄膜材料与薄膜技术.化学工业出版社,北京
[10]W. Kern (1993) Noyes New Jersey
[11]美.P. A. Kinzie,陈道龙译(1980)热电偶测温.原子能出版社,北京
[12]何崇智,郗秀荣,孟庆恩(1988)X射线衍射实验技术.上海科学技术出版社,上海
[13]P. F. Fewster (2000) Imperial College Press, World Scientific, Singapore
[14]M. Birkholz, P. F. Fewster, C. Genzel (2006) Wiley-VCH, Weinheim, Germany
[15]R. Grieken, A. Markowicz (2002) Marcel Dekker, New York
[16]H. G Tompkins, W. A. McGahan (1999) Wiley & Sons
[17]H. G Tompkins, E. A. Irene (2005) Springer
[18]R. L. Sun, G. Benoit (2004),
[19]S. Trusso, F. Barreca, F. Neri, Bonding configurations and optical band gap for nitrogenated amorphous silicon carbide films prepared by pulsed laser ablation, J. Appl. Phys., (2002) 92:2485-9
[20]郑顺旋(1985)激光喇曼光谱学.上海科学技术出版社,上海
[21]左声演(2000)材料现代分析方法.北京工业大学出版社,北京
[22]马如璋,徐祖雄(1997)材料物理现代研究方法.冶金工业出版社,北京
[23]M. J. Pelletier, C. C. Pelletier (2005) in Worsfold P., Townshend A., Poole C. (eds)Encyclopedia of Analytical Science Second Edition edn. Academic Press, London
[24]G. Turrell, J. Corset (1996) Academic Press,
[25]J. R. Ferraro, K. Nakamoto, C. W. Brown (2003), Second Edition edn. Academic Press, New York
[26]I. R. Lewis, H. G M. Edwards (2001) From the Research Laboratory to the Process LineMarcel Dekker, New York
[27]刘世宏,王当憨,潘承璜(1988)X射线光电子能谱分析.科学出版社,北京
[28]M. Ohring (2002), Second Edition edn. Academic Press, San Diego
[29]C. R. Brundle, C. A. E. Jr., S. Wilson (1992) Encyclopedia of Materials CharacterizationManning Publications Co., Butterworth-Heinemann, Boston
[30]G F. McGuire (1989) William Andrew Publishing, Noyes
[31]E. N. Kaufmann (2003) in Kaufinann E. N. (ed)Wiley, New Jersey
[32]吴刚(2001)材料结构表征及应用.化工工业出版社,北京
[33]H. Bubert, H. Jenett (2002) Wiley-VCH, Weinheim
[34]G Gauglitz, T. Vo-Dinh (2003) in Gauglitz G., Vo-Dinh T. (eds)Wiley,
[35]周名成,俞汝勤编(1986)紫外与可见分光光度分析法.化学工业出版社,北京
[36]陈国珍,黄贤智,郑朱梓等编著(1990)荧光分析法(第二版).科学出版社,北京
[1]L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen, Y. C. Jong, Y. S. Huang, Crystalline silicon carbon nitride:A wide band gap semiconductor, Appl. Phys. Lett., (1998) 72:2463-5
[2]L. C. Chen, C. K. Chen, D. M. Bhusari, et al. (1997) in Abernathy C. R., Amano H., Zolper J. C. (eds)Mater. Res. Soc. Symp. Proc., San Francisco, Ca
[3]L. C. Chen, K. H. Chen, S. L. Wei, P. D. Kichambare, J. J. Wu, T. R. Lu, C. T. Kuo, Crystalline SiCN:a hard material rivals to cubic BN, Thin Solid Films, (1999) 356:112-6
[4]S. Zhu, H. W. White (1998) in Johnson R. N., Lee W. Y., Pickering M. A., Sheldon B. W. (eds), Boston, Ma
[5]K. H. Chen, J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y. F. Chen, Y. S. Huang (1999) in Abernathy C. R., Baca A., Buckley D. N., Chen K. H., Kopf R., Sah R. E. (eds), Seattle, Wa
[6]D. H. Zhang, Y. Gao, J. Wei, Amorphous SiCN films prepared by ECR-CVD technique for photoconductive detectors, Photonics Technology into the 21st Century:Semiconductors, Microstructures, and Nanostructures, (1999) 3899:428-33 552
[7]C. Y. Wen, J. J. Wu, H. J. Lo, L. C. Chen, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin, Methylamine growth of SiCN films using ECR-CVD, Chemical Processing of Dielectrics, Insulators and Electronic Ceramics, (2000) 606:115-20 308
[8]S. L. Sung, C. H. Tseng, F. K. Chiang, X. J. Guo, X. W. Liu, H. C. Shih, A novel approach to the formation of amorphous carbon nitride film on silicon by ECR-CVD, Thin Solid Films, (1999) 340:169-74
[9]C. Y. Wen, J. J. Wu, H. J. Lo, L. C. Chen, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin (1999) in Jones A. C., Veteran J., Mullin D., Cooper R., Kaushal S. (eds), Boston, Ma
[10]D. H. Zhang, Y. Gao, J. Wei, Z. Q. Mo, Influence of silane partial pressure on the properties of amorphous SiCN films prepared by ECR-CVD, Thin Solid Films, (2000) 377:607-10
[11]H. C. Lo, J. J. Wu, C. Y. Wen, T. S. Wong, S. T. Lin, K. H. Chen, L. C. Chen, Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation, Diam. Relat. Mat., (2001) 10:1916-20
[12]D. Sarangi, R. Sanjines, A. Karimi, Effect of silicon doping on the mechanical and optical properties of carbon nitride thin films, Thin Solid Films, (2004) 447-448:217-22
[13]I. Ferreira, E. Fortunato, P. Vilarinho, A. S. Viana, A. R. Ramos, E. Alves, R. Martins, Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques, J. Non-Cryst. Solids, (2005)352:1361-6
[14]I. Ferreira, E. Fortunato, P. Vilarinho, A. S. Viana, A. R. Ramos, E. Alves, R. Martins, Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques, J. Non-Cryst. Solids, (2006)352:1361-6
[15]A. Izumi, K. Oda, Deposition of SiCN films using organic liquid materials by HWCVD method, Thin Solid Films, (2006) 501:195-7
[16]A. Limmanee, M. Otsubo, T. Sato, S. Miyajima, A. Yamada, M. Konagai, Study of the structural properties of a-SiCN:H films using hexamethyldisilazane for high-quality silicon surface passivation, Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on, (2006) 1: 1227-30
[17]A. lzumi, T. Nakayamada, Formation of highly transparent SiCN films prepared by HWCVD, Advances in Science and Technology, (2008) 54:223-6
[18]T. Nakayamada, K. Matsuo, Y. Hayashi, A. Izumi, Y. Kadotani, Evaluation of corrosion resistance of SiCN films deposited by HWCVD using organic liquid materials, Thin Solid Films, (2008) 516:656-8
[19]A. Izumi, T. Nakayamada, Formation of highly transparent SiCN films prepared by HWCVD, Adv Sci Tech, (2009) 54:223-6
[20]E. G. Wang, C. Z. Wang, C. F. Chen, Y. Chen (1997) in Siegal M. P., Milne W. I., Jaskie J. E. (eds), Boston, Ma
[21]S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, J. J. Ho, Cubic single-crystalline Sil-x-yCxNy films with mirror face prepared by RTCVD, Electrochem. Solid State Lett., (2001) 4:G91-G3
[22]S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, J. J. Ho, Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition, J. Electron. Mater., (2002) 31:1341-6
[23]N. M. Park, S. H. Kim, G. Y. Sung, Band gap engineering of SiCN film grown by pulsed laser deposition, J. Appl. Phys., (2003) 94:2725-8
[24]X. B. Yan, B. K. Tay, G. Chen, S. R. Yang, Synthesis of silicon carbide nitride nanocomposite films by a simple electrochemical method, Electrochem. Commun., (2006) 8:737-40
[25]S. Komatsu, Y. Hirohata, S. Fukuda, T. Hino, T. Yamashina, T. Hata, K. Kusakabe, PREPARATION AND CHARACTERIZATION OF REACTIVELY SPUTTERED SICXNY FILMS, Thin Solid Films, (1990) 193:917-23
[26]Y. Gao, J. Wei, D. H. Zhang, Z. Q. Mo, P. Hing, X. Shi, Effects of nitrogen fraction on the structure of amorphous silicon-carbon-nitrogen alloys, Thin Solid Films, (2000) 377:562-6
[27]X. C. Xiao, Y. W. Li, L. X. Song, X. F. Peng, X. F. Hu, Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N-2 and Ar, Appl. Surf. Sci., (2000) 156:155-60
[28]C. Moura, L. Cunha, H. Orfao, K. Pischow, J. De Rijk, M. Rybinski, D. Mrzyk (2002), Garmisch Partenki, Germany
[29]J. Vlcek, M. Kormunda, J. Cizek, V. Perina, J. Zemek, Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films, Surf. Coat. Technol., (2002) 160:74-81
[30]S. K. Mishra, H. Gaur, P. K. P. Rupa, L. C. Pathak, Deposition of nanostructured Si-C-N superhard coatings by rf magnetron sputtering, J. Vac. Sci. Technol. B, (2006)24:1311-7
[31]Z. G. He, G. Carter, J. S. Colligon, Ion-assisted deposition of C-N and Si-C-N films, Thin Solid Films, (1996)283:90-6
[32]H. Lutz, M. Bruns, F. Link, H. Baumann, Synthesis of silicon carbonitride thin films by means of r.f.-sputtering and ion implantation, Surf. Coat. Technol., (1999) 119:419-23
[33]J. J. Wu, C. T. Wu, Y. C. Liao, T. R. Lu, L. C. Chen, K. H. Chen, L. G. Hwa, C. T. Kuo, K. J. Ling, Deposition of silicon carbon nitride films by ion beam sputtering, Thin Solid Films, (1999) 356:417-22
[34]X. C. Wu, Y. Y. Wang, Properties of a-SiCxNy:H films produced by reactive-sputtering, Acta Phys. Sin., (1999)48:134-9
[35]J. Wei, Y. Gao, D. H. Zhang, P. Hing, Z. Q. Mo, Growth of sign films by magnetron sputtering, Surf. Eng., (2000) 16:225-8
[36]Z. X. Cao, Nanocrystalline silicon carbonitride thin films prepared by plasma beam-assisted deposition, Thin Solid Films, (2001) 401:94-101
[37]X. F. Peng, L. X. Song, J. Meng, Y. Z. Zhang, X. F. Hu, Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target, Appl. Surf. Sci., (2001) 173:313-7
[38]L. Cunha, C. Moura, J. Leme, G Andres, K. Pischow (2003), San Diego, California
[39]G. Radnoczi, G. Safran, Z. Czigany, T. Berlind, L. Hultman, Structure of DC sputtered Si-C-N thin films, Thin Solid Films, (2003) 440:41-4
[40]E. Q. Xie, Z. W. Ma, H. F. Lin, Z. M. Zhang, D. Y. He, Preparation and characterization of SiCN films, Opt. Mater., (2003)23:151-6
[41]P. Gao, J. Xu, Y. Piao, W. Y. Ding, D. H. Wang, X. L. Deng, C. Dong, J. X. Peng Gao, Yong Piaoa, Wanyu Ding, Dehe Wang, Xinlu Deng and Chuang Donga, Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering, Surf. Coat. Technol., (2007) 201: 5298-301
[42]Z. Y. Chen, H. F. Lin, J. Y. Zhou, Z. W. Ma, E. Q. Xie, IR studies of SiCN films deposited by RF sputtering method, Journal of Alloys and Compounds, (2009) 487:531-6
[43]W. L. Li, J. L. Yang, Y. Zhao, W. D. Fei, Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target, Journal of Alloys and Compounds, (2009) 482:317-9
[44]E. Tomasella, L. Spinelle, A. Bousquet, F. Rebib, M. Dubois, C. Eypert, J. P. Gaston, J. Cellier, T. Sauvage, Structural and Optical Investigations of Silicon Carbon Nitride Thin Films Deposited by Magnetron Sputtering, Plasma Process. Polym., (2009) 6:S11-S6
[45]Y. Q. Peng, J. C. Zhou, Z. C. Zhang, B. X. Zhao, X. C. Tan, Influence of radiofrequency power on compositional, structural and optical properties of amorphous silicon carbonitride films, Appl. Surf. Sci., (2010)256:2189-92
[46]E. J. Liang, J. W. Zhang, J. Leme, C. Moura, L. Cunha (2004), San Diego, CA
[47]S. K. Mishra, C. Shekhar, P. K. P. Rupa, L. C. Pathak, Effect of pressure and substrate temperature on the deposition of nano-structured silicon-carbon-nitride superhard coatings by magnetron sputtering, Thin Solid Films, (2007) 515:4738-44
[48]S. K. Mishra, A. S. Bhattacharyya, Effect of substrate temperature on the adhesion properties of magnetron sputtered nano-composite Si-C-N hard thin films, Mater. Lett., (2008) 62:398-402
[49]X. C. Xiao, L. X. Song, W. H. Jiang, X. F. Peng, X. F. Hu, Influence of sputtering process on the deposition and optical properties of SiCN films, J. Inorg. Mater., (2000) 15:717-21
[50]T. T. Sun, Y. Q. Fu, J. Wei, H. J. Du, Nitrogen contents on tribological properties of magnetron sputtered SiCN coatings,14th Congress of International Federation for Heat Treatment and Surface Engineering, Vols 1 and 2, Proceedings, (2004) 25:854-7
[51]M. A. Fraga, M. Massi, I. C. Oliveira, H. S. Maciel, S. G.dos Santos, R. D. Mansano, Nitrogen doping of SiC thin films deposited by RF magnetron sputtering, J. Mater. Sci.-Mater. Electron., (2008) 19:835-40
[52]K. B. Sundaram, J. Alizadeh, Deposition and optical studies of silicon carbide nitride thin films, Thin Solid Films, (2000) 370:151-4
[53]L. C. Chen, K. H. Chen, J. J. Wu, D. M. Bhusari, M. C. Lin, N. Hari Singh, M.Sc, Ph.D (2001) Silicon-Based Material and DevicesAcademic Press, Burlington
[54]S. L. Ma, B. Xu, G. Z. Wu, Y. F. Wang, F. Ma, D. Y. Ma, K. W. Xu, T. Bell (2007), Nagasaki, JAPAN
[55]A. S. Bhattacharyya, S. K. Mishra, S. Mukherjee, G C. Das, A comparative study of Si-C-N films on different substrates grown by RF magnetron sputtering, Journal of Alloys and Compounds, (2009) 478:474-8
[56]X. F. Peng, L. X. Song, J. Le, X. F. Hu, Spectra characterization of silicon carbonitride thin films by reactive radio frequency sputtering, J. Vac. Sci. Technol. B, (2002) 20:159-63
[57]X. W. Du, Y. Fu, J. Sun, P. Yao, L. Cui, Intensive light emission from SiCN films by reactive RF magnetron sputtering, Mater. Chem. Phys., (2007) 103:456-60
[58]M. Xu, V. M. Ng, S. Y. Huang, S. Y. Xu, Low-temperature growth and photoluminescence of SiCN nanoparticle film by consecutive RF magnetron sputtering, Surf. Rev. Lett., (2004) 11:515-9
[59]E. J. Liang, J. W. Zhang, J. Leme, C. Moura, L. Cunha, Raman analysis of Si-C-N films grown by reactive magnetron sputtering, Thin Solid Films, (2004) 469-70:410-5
[60]J. P. Wang, Y. H. Lu, Y. G.Shen, Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films, Appl. Surf. Sci., (2010) 256:1955-60
[61]H. Hoche, D. Allebrandt, M. Bruns, R. Riedel, C. Fasel, Relationship of chemical and structural properties with the tribological behavior of sputtered SiCN films, Surf. Coat. Technol., (2008) 202:5567-71
[62]M. Y. Chen, D. Li, X. Lin, V. P. Dravid, Y.-W. Chung, M.-S. Wong, W. D. Sproul, Analytical electron microscopy and Raman spectroscopy studies of carbon nitride thin films, Journal of Vacuum Science & Technology A:Vacuum, Surfaces, and Films, (1993) 11:521-4
[63]C. W. Chen, C. C. Huang, Y. Y. Lin, L. C. Chen, K. H. Chen, The affinity of Si-N and Si-C bonding in amorphous silicon carbon nitride (a-SiCN) thin film, Diam. Relat. Mat., (2005) 14:1126-30
[64]W. Zhang, J. T. Wang, Sicxny-H Films Produced from an Rf Discharge of the Sih4-Ch4-Nh3 System, Surf. Coat. Technol., (1991) 50:11-5
[65]J. Y. Wu, C. T. Kuo, P. J. Yang, Growth competition between crystalline silicon carbon nitrides and silicon nitrides deposited on Si wafer by MPCVD, Mater. Chem. Phys., (2001) 72:245-50
[66]W. R. Chang, Y. K. Fang, S. F. Ting, Y. S. Tsair, C. N. Chang, C. Y. Lin, S. F. Chen, The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications, IEEE Electron Device Lett., (2003) 24:565-7
[67]W. R. Chang, Y. K. Fang, S. F. Ting, S. F. Chen, C. Y. Lin, S. B. Hwang, C. N. Chang, The contact characteristics of SiCN films for opto-electrical devices applications, J. Electron. Mater., (2004) 33:181-4
[68]C. H. Hsieh, Y. S. Huang, K. K. Tiong, C. W. Fan, Y. F. Chen, L. C. Chen, J. J. Wu, K. H. Chen, Piezoreflectance study of an Fe-containing silicon carbon nitride crystalline film, J. Appl. Phys., (2000) 87: 280-4
[69]Y. N. Qian, X. M. Ma, W. J. Cheng, Synthesis and characterization of dandelion-shaped SiCN rods,2008 2nd Ieee International Nanoelectronics Conference, Vols 1-3, (2008):289-92 1201
[70]H. L. Chang, C. T. Kuo, Effects of substrate pretreatments and catalyst applications on Si-C-N films and nanotube formations, Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap., (2001) 40:7018-22
[71]V. M. Ng, M. Xu, S. Y. Huang, J. D. Long, S. Xu, Assembly and photoluminescence of SiCN nanoparticles, Thin Solid Films, (2006) 506:283-7
[72]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, V. M. Ng, J. D. Long, P. Yang, Growth and visible photoluminescence of SiCxNy/AlN nanoparticle superlattices, Physica E, (2006) 35:81-7
[73]M. Xu, S. Xu, V. M. Ng, S. Y. Huang, J. W. Chai, J. D. Long, Visible photoluminescence in SiCN nanoparticle films grown by plasma rf magnetron sputtering, Int. J. Mod. Phys. B, (2006) 20:73-83
[74]R. Reyes, C. Legnani, P. M. R. Pinto, M. Cremona, P. J. G. de Araujo, C. A. Achete, Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films, Appl. Phys. Lett., (2003) 82:4017-9
[1]L. C. Chen, C. K. Chen, D. M. Bhusari, et al. (1997) in Abernathy C. R., Amano H., Zolper J. C. (eds)Mater. Res. Soc. Symp. Proc., San Francisco, Ca
[2]L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen, Y. C. Jong, Y. S. Huang, Crystalline silicon carbon nitride:A wide band gap semiconductor, Appl. Phys. Lett., (1998) 72:2463-5
[3]W. R. Chang, Y. K. Fang, S. F. Ting, Y. S. Tsair, C. N. Chang, C. Y. Lin, S. F. Chen, The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications, IEEE Electron Device Lett., (2003) 24:565-7
[4]L. C. Chen, K. H. Chen, J. J. Wu, D. M. Bhusari, M. C. Lin, N. Hari Singh, M.Sc, Ph.D (2001) Silicon-Based Material and Devices Academic Press, Burlington
[5]W. R. Chang, Y. K. Fang, S. F. Ting, S. F. Chen, C. Y. Lin, S. B. Hwang, C. N. Chang, The contact characteristics of SiCN films for opto-electrical devices applications, J. Electron. Mater., (2004) 33:181-4
[6]C. H. Hsieh, Y. S. Huang, K. K. Tiong, C. W. Fan, Y. F. Chen, L. C. Chen, J. J. Wu, K. H. Chen, Piezoreflectance study of an Fe-containing silicon carbon nitride crystalline film, J. Appl. Phys., (2000) 87: 280-4
[7]Y. N. Qian, X. M. Ma, W. J. Cheng, Synthesis and characterization of dandelion-shaped SiCN rods,2008 2nd Ieee International Nanoelectronics Conference, Vols 1-3, (2008):289-92 1201
[8]H. L. Chang, C. T. Kuo, Effects of substrate pretreatments and catalyst applications on Si-C-N films and nanotube formations, Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap., (2001) 40:7018-22
[9]V. M. Ng, M. Xu, S. Y. Huang, J. D. Long, S. Xu, Assembly and photoluminescence of SiCN nanoparticles, Thin Solid Films, (2006) 506:283-7
[10]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, J. D. Long, Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer, J. Non-Cryst. Solids, (2006) 352:5463-8
[11]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, V. M. Ng, J. D. Long, P. Yang, Growth and visible photoluminescence of SiCxNy/AIN nanoparticle superlattices, Physica E, (2006) 35:81-7
[12]M. Xu, V. M. Ng, S. Y. Huang, S. Y. Xu, Low-temperature growth and photoluminescence of SiCN nanoparticle film by consecutive RF magnetron sputtering, Surf. Rev. Lett., (2004) 11:515-9
[13]M. Xu, S. Xu, V. M. Ng, S. Y. Huang, J. W. Chai, J. D. Long, Visible photoluminescence in SiCN nanoparticle films grown by plasma rf magnetron sputtering, Int. J. Mod. Phys. B, (2006) 20:73-83
[14]X. W. Du, Y. Fu, J. Sun, P. Yao, L. Cui, Intensive light emission from SiCN films by reactive RF magnetron sputtering, Mater. Chem. Phys., (2007) 103:456-60
[15]R. Reyes, C. Legnani, P. M. R. Pinto, M. Cremona, P. J. G. de Araujo, C. A. Achete, Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films, Appl. Phys. Lett., (2003) 82:4017-9
[16]L. Y. Yang, D. H. Zhang, C. Y. Li, R. Liu, P. W. Lu, P. D. Foo, A. T. S. Wee, Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration, Thin Solid Films, (2006) 504:265-8
[17]L. Zhang, Y. W. Chen, C. Y. Li, C. Li, L. Y. Wong, H. Y. Li, S. Balakumar, H. S. Park, Defect study on Nanoglass (R) E porous ultra-low k material (k similar to 2.2) for ultra-large-scale integration applications, Mater. Sci. Semicond. Process, (2004) 7:89-93
[18]J. Martin, T. Stephens, F. Huang, et al., Integration of SiCN as a low kappa etch stop and Cu passivation in a high performance Cu/low kappa interconnect, Proceedings of the Ieee 2002 International Interconnect Technology Conference, (2002):42-4
[19]L. Y. Yang, D. H. Zhang, C. Y. Li, P. W. Lu, P. D. Foo, SiCN and Ta/TaN barriers for Cu/Ultra low k integration in 0.13 mu m technology, P Soc Photo-Opt Ins, (2004) 5774:454-7 654
[20]D. H. Zhang, L. Y. Yang, C. Y. Li, P. W. Lu, P. D. Foo, Ta/SiCN bilayer barrier for Cu-ultra low k integration, Thin Solid Films, (2006) 504:235-8
[21]S. Komatsu, Y. Hirohata, S. Fukuda, T. Hino, T. Yamashina, T. Hata, K. Kusakabe, PREPARATION AND CHARACTERIZATION OF REACTIVELY SPUTTERED SICXNY FILMS, Thin Solid Films, (1990) 193:917-23
[22]Z. Alizadeh, K. B. Sundaram, Electrical studies on amorphous silicon carbide nitride films, Journal of Materials Science Letters, (2002) 21:7-8
[23]M. A. Fraga, M. Massi, I. C. Oliveira, N. C. Cruz, S. G. D. S. Filho, Electrical and Mechanical Properties of Post-Annealed SiCxNy Films, Materials Science Forum (2009) 615-617:327-30
[24]Y. F. Zhang, X. Zhao, X. F. Cheng, Y. G. Mu, Density functional Study on electronic properties of P-doped spinel silicon carbon nitride, J. Solid State Chem., (2008) 181:2113-6
[25]Y. C. Chou, S. Chattopadhyaya, L. C. Chen, Y. F. Chen, K. H. Chen (2002), Granada, Spain
[26]X. C. Xiao, L. X. Song, W. H. Jiang, X. F. Peng, X. F. Hu, Influence of sputtering process on the deposition and optical properties of SiCN films, J. Inorg. Mater., (2000) 15:717-21
[27]K. B. Sundaram, J. Alizadeh, Deposition and optical studies of silicon carbide nitride thin films, Thin Solid Films, (2000) 370:151-4
[28]K. B. Sundaram, Z. Alizadeh, R. M. Todi, V. H. Desai, Investigations on hardness of rf sputter deposited SiCN thin films, Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process., (2004) 368:103-8
[1]L. C. Chen, C. K. Chen, D. M. Bhusari, et al. (1997) in Abernathy C. R., Amano H., Zolper J. C. (eds)Mater. Res. Soc. Symp. Proc., San Francisco, Ca
[2]L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen, Y. C. Jong, Y. S. Huang, Crystalline silicon carbon nitride:A wide band gap semiconductor, Appl. Phys. Lett., (1998) 72:2463-5
[3]W. R. Chang, Y. K. Fang, S. F. Ting, Y. S. Tsair, C. N. Chang, C. Y. Lin, S. F. Chen, The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications, IEEE Electron Device Lett., (2003) 24:565-7
[4]L. C. Chen, K. H. Chen, J. J. Wu, D. M. Bhusari, M. C. Lin, N. Hari Singh, M.Sc, Ph.D (2001) Silicon-Based Material and DevicesAcademic Press, Burlington
[5]W. R. Chang, Y. K. Fang, S. F. Ting, S. F. Chen, C. Y. Lin, S. B. Hwang, C. N. Chang, The contact characteristics of SiCN films for opto-electrical devices applications, J. Electron. Mater., (2004) 33:181-4
[6]C. H. Hsieh, Y. S. Huang, K. K. Tiong, C. W. Fan, Y. F. Chen, L. C. Chen, J. J. Wu, K. H. Chen, Piezoreflectance study of an Fe-containing silicon carbon nitride crystalline film, J. Appl. Phys., (2000) 87: 280-4
[7]Y. N. Qian, X. M. Ma, W. J. Cheng, Synthesis and characterization of dandelion-shaped SiCN rods,2008 2nd Ieee International Nanoelectronics Conference, Vols 1-3, (2008):289-92 1201
[8]H. L. Chang, C. T. Kuo, Effects of substrate pretreatments and catalyst applications on Si-C-N films and nanotube formations, Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap., (2001) 40:7018-22
[9]T. W. MacElwee, S. E. Hill, S. Campbell, et al. (2006) Group IV Photonics,2006.3rd IEEE International Conference on,
[10]S. Se-Young, J. Hoon, C. Kwan-Sik, J. H. Shin (2004) Group IV Photonics,2004. First IEEE International Conference on,
[11]S.-Y. Seo, J. H. Shin, Enhancement of the green, visible Tb3+ luminescence from Tb-doped silicon-rich silicon oxide by C co-doping, Appl. Phys. Lett., (2004) 84:4379-81
[12]H. Jeong, J. H. Shin, G. Y. Sung, Ieee (2008) Green, self-luminescent Tb3+ doped silicon oxy-nitride microdisk on Si chip for biosensor applications. Ieee, New York
[13]S. Hassan, M Carravetta, A. L. Hector, L. A. Stebbings, Nonoxide Sol-Gel Synthesis of Terbium-Doped Silicon Nitride Phosphors, J. Am. Ceram. Soc., (2010) 93:1069-73
[14]W. Gao, T. K. Li, Y. Ono, S. T. Hsu, Photoluminescence and electroluminescence studies on Tb-doped silicon rich oxide materials and devices, J Rare Earth, (2006) 24:673-8
[15]Z. Z. Yuan, D. S. Li, M. H. Wang, P. L. Chen, D. Gong, L. Wang, D. Yang, Photoluminescence of Tb3+ doped SiNx films grown by plasma-enhanced chemical vapor deposition, J. Appl. Phys., (2006) 100:083106
[16]A. R. Zanatta, A. Khan, M. E. Kordesch, Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb, J. Phys.-Condes. Matter, (2007) 19:-
[17]T. Roschuk, P. R. J. Wilson, J. Li, O. H. Y. Zalloum, J. Wojcik, P. Mascher, Structure and luminescence of rare earth-doped silicon oxides studied through their X-ray absorption near edge structure and X-ray excited optical luminescence, Phys Status Solidi B, (2010) 247:248-53
[18]N.-M. Park, S. H. Kim, G. Y. Sung, Band gap engineering of SiCN film grown by pulsed laser deposition, J. Appl. Phys., (2003) 94:2725-8
[19]E. Xie, Z. Ma, H. Lin, Z. Zhang, D. He, Preparation and characterization of SiCN films, Opt. Mater., (2003)23:151-6
[20]X. C. Wu, R. Q. Cai, P. X. Yan, W. M. Liu, J. Tian, SiCN thin film prepared at room temperature by r.f. reactive sputtering, Appl. Surf. Sci., (2002) 185:262-6
[21]X. B. Yan, B. K. Tay, G. Chen, S. R. Yang, Synthesis of silicon carbide nitride nanocomposite films by a simple electrochemical method, Electrochem. Commun., (2006) 8:737-40
[22]F. Liu, L. Fu, J. Wang, Z. Liu, H. Li, H. Zhang, Luminescent hybrid films obtained by covalent grafting of terbium complex to silica network, Thin Solid Films, (2002) 419:178-82
[23]N. Chiodini, A. Paleari, G Brambilla, E. R. Taylor, Erbium doped nanostructured tin--silicate glass--ceramic composites, Appl. Phys. Lett., (2002) 80:4449-51
[24]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, J. D. Long, Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer, J. Non-Cryst. Solids, (2006) 352:5463-8
[25]S. Komatsu, Y. Hirohata, S. Fukuda, T. Hino, T. Yamashina, T. Hata, K. Kusakabe, PREPARATION AND CHARACTERIZATION OF REACTIVELY SPUTTERED SICXNY FILMS, Thin Solid Films, (1990) 193:917-23
[26]E. Q. Xie, Z. W. Ma, H. F. Lin, Z. M. Zhang, D. Y. He, Preparation and characterization of SiCN films, Opt. Mater., (2003) 23:151-6
[27]H. Lutz, M. Bruns, F. Link, H. Baumann, Synthesis of silicon carbonitride thin films by means of r.f.-sputtering and ion implantation, Surf. Coat. Technol., (1999) 119:419-23
[28]J. J. Wu, C. T. Wu, Y. C. Liao, T. R. Lu, L. C. Chen, K. H. Chen, L. G Hwa, C. T. Kuo, K. J. Ling, Deposition of silicon carbon nitride films by ion beam sputtering, Thin Solid Films, (1999) 356:417-22
[29]X. C. Wu, Y. Y. Wang, Properties of a-SiCxNy:H films produced by reactive-sputtering, Acta Phys. Sin., (1999)48:134-9
[30]X. M. He, T. N. Taylor, R. S. Lillard, K. C. Walter, M. Nastasi, Bonding structure and properties of ion enhanced reactive magnetron sputtered silicon carbonitride films, J. Phys.-Condes. Matter, (2000) 12: L591-L7
[31]X. C. Xiao, Y. W. Li, L. X. Song, X. F. Peng, X. F. Hu, Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N-2 and Ar, Appl. Surf. Sci., (2000) 156:155-60
[32]X. F. Peng, L. X. Song, J. Meng, Y. Z. Zhang, X. F. Hu, Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target, Appl. Surf. Sci., (2001) 173:313-7
[33]G. Radnoczi, G Safran, Z. Czigany, T. Berlind, L. Hultman, Structure of DC sputtered Si-C-N thin films, Thin Solid Films, (2003) 440:41-4
[34]Z. G He, G. Carter, J. S. Colligon, Ion-assisted deposition of C-N and Si-C-N films, Thin Solid Films, (1996) 283:90-6
[35]M. Bruns, U. Geckle, V. Trouillet, M. Rudolphi, H. Baumann, Tailored stoichiometries of silicon carbonitride thin films prepared by combined radio frequency magnetron sputtering and ion beam synthesis, J. Vac. Sci. Technol. A, (2005) 23:1114-9
[36]X. W. Du, Y. Fu, J. Sun, P. Yao, L. Cui, Intensive light emission from SiCN films by reactive RF magnetron sputtering, Mater. Chem. Phys., (2007) 103:456-60
[37]X. W. Du, Y. Fu, J. Sun, P. Yao, The effect of annealing atmosphere on photoluminescent properties of SiCN films, Surf. Coat. Technol., (2007) 201:5404-7
[38]X. W. Du, Y. Fu, J. Sun, P. Yao, The evolution of microstructure and photoluminescence of SiCN films with annealing temperature, J. Appl. Phys., (2006) 99:4
[39]J. Zhou, M. Zhou, Z. Chen, Z. Zhang, C. Chen, R. Li, X. Gao, E. Xie, SiC nanotubes arrays fabricated by sputtering using electrospun PVP nanofiber as templates, Surface & Coatings Technology, (2009) 203 3219
[40]L. C. Chen, K. H. Chen, S. L. Wei, P. D. Kichambare, J. J. Wu, T. R. Lu, C. T. Kuo, Crystalline SiCN:a hard material rivals to cubic BN, Thin Solid Films, (1999) 355-356:112-6
[41]X.-W. Du, Y. Fu, J. Sun, P. Yao, The evolution of microstructure and photoluminescence of SiCN films with annealing temperature, J. Appl. Phys., (2006) 99:093503-4
[42]X.-W. Du, Y. Fu, J. Sun, P. Yao, The effect of annealing atmosphere on photoluminescent properties of SiCN films, Surface & Coatings Technology, (2007) 201:5404-7
[43]M. T. Kim, J. Lee, Characterization of amorphous SiC:H films deposited from hexamethyldisilazane, Thin Solid Films, (1997) 303:173-9
[44]M. T. Kim, Deposition behavior of hexamethydisiloxane films based on the FTIR analysis of Si-O-Si and Si-CH3 bonds, Thin Solid Films, (1997) 311:157-63
[45]H. Amekura, A. Eckau, R. Carius, C. Buchal, Room-temperature photoluminescence from Tb ions implanted in SiO[sub 2] on Si, J. Appl. Phys., (1998) 84:3867-71
[46]J.-Y. Zhou, Z.-Y. Chen, M. Zhou, X.-P. Gao, E.-Q. Xie, SiC Nanorods Grown on Electrospun Nanofibers Using Tb as Catalyst:Fabrication, Characterization, and Photoluminescence Properties, Nanoscale Res. Lett., (2009)4:814-9
[47]M.-H. Du, S. C. Erwin, A. L. Efros, Trapped-Dopant Model of Doping in Semiconductor Nanocrystals, Nano Letters, (2008) 8:2878-82
[48]Z. Chen, Y. Wang, H. He, Y. Zou, J. Wang, Y. Li, Mechanism of intense blue photoluminescence in silica wires, Solid State Commun., (2005) 135:247-50
[49]K. F. Cai, A. X. Zhang, J. L. Yin, H. F. Wang, X. H. Yuan, Preparation, characterization and photoluminescence properties of ultra long SiC/SiOx nanocables, Appl. Phys. A, (2008) 91:579-84
[50]X. M. Liu, K. F. Yao, Large-scale synthesis and photoluminescence properties of SiC/SiOx nanocables, Nanotechnology, (2005) 16:2932-5
[51]D. H. Feng, T. Q. Jia, X. X. Li, Z. Z. Xu, J. Chen, S. Z. Deng, Z. S. Wu, N. S. Xu, Catalytic synthesis and photoluminescence of needle-shaped 3C-SiC nanowires, Solid State Commun., (2003) 128:295-7
[52]C. H. Kam, S. Buddhudu, Emission properties of GdOBr:Ce3+ and Tb3+ phosphors, Mater. Lett., (2002) 54:337-42
[53]Z. Li, J. Zhang, A. Meng, J. Guo, Large-Area Highly-Oriented SiC Nanowire Arrays:Synthesis, Raman, and Photoluminescence Properties, J. Phys. Chem. B, (2006) 110:22382-6
[54]F. J. Gomez, P. Prieto, E. Elizalde, J. Piqueras, SiCN alloys deposited by electron cyclotron resonance plasma chemical vapor deposition, Appl. Phys. Lett., (1996) 69:773-5
[55]P. Jedrzejowski, J. Cizek, A. Amassian, J. E. Klemberg-Sapieha, J. Vlcek, L. Martinu, Mechanical and optical properties of hard SiCN coatings prepared by PECVD, Thin Solid Films, (2004) 447-448:201-7
[56]K. Yamamoto, Y. Koga, S. Fujiwara, XPS studies of amorphous SiCN thin films prepared by nitrogen ion-assisted pulsed-laser deposition of SiC target, Diam. Relat. Mater., (2001) 10:1921-6
[57]K. H. Chen, J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y. F. Chen, Y. S. Huang, Wide band gap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition, Thin Solid Films, (1999) 355-356:205-9
[58]B. D. Padalia, W. C. Lang, P. R. Norris, L. M. Watson, D. J. Fabian, X-ray photoelectron core-level studies of the heavy rare-earth metals and their oxides Proc. R. Soc. Lond. A., (1977) 354:269-90
[59]G. L. P. Berning, H. C. Swart, A study of the oxide grown on Tb and terbium silicide by XPS, AES and XRD, Appl. Surf. Sci., (1994) 78:339-43
[60]X.-H. Lu, G.-R. Li, X.-L. Yu, Y.-X. Tong, Electrochemical Synthesis and Characterization of TbO2-x Flowerlike Nanostructures, Electrochem. Solid-State Lett., (2008) 11:K85-K8
[61]M. A. Fraga, M. Massi, I. C. Oliveira, H. S. Maciel, S. G dos Santos, R. D. Mansano, Nitrogen doping of SiC thin films deposited by RF magnetron sputtering, J. Mater. Sci.-Mater. Electron., (2008) 19:835-40
[62]H. Lutz, M. Bruns, F. Link, H. Baumann, Surface- and microanalytical characterization of silicon-carbonitride thin films prepared by means of radio-frequency magnetron co-sputtering, Thin Solid Films, (1998) 332:230-4
[63]C. Fernandez-Ramos, J. C. Sanchez-Lopez, T. C. Rojas, A. Fernadndez, Structural modifications of silicon-doped carbon nitride films during post-deposition annealing, Diam. Relat. Mat., (2003) 12:1055-60
[64]Y. Zhao, J. Xu, W. Ding, M. Zhang, W. Lu, Characterization of oxygen impurities in SiCN films, Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, (2009) 29:26-30
[65]A. G. D. La Rocque, G. Dufour, P. A. Bonnefont, C. Senemaud (1997) in Gonsalves K. E., Baraton M. I., Singh R., Hofmann H., Chen J. X., Akkara J. A. (eds), Boston, Ma
[66]E. J. Liang, J. W. Zhang, J. Leme, C. Moura, L. Cunha, Raman analysis of Si-C-N films grown by reactive magnetron sputtering, Thin Solid Films, (2004) 469-70:410-5
[67]S. Trusso, F. Barreca, F. Neri, Bonding configurations and optical band gap for nitrogenated amorphous silicon carbide films prepared by pulsed laser ablation, J. Appl. Phys., (2002) 92:2485-9
[68]J. P. Wang, Y. H. Lu, Y. G Shen, Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films, Appl. Surf. Sci., (2010) 256:1955-60
[69]A. Limmanee, M. Otsubo, T. Sugiura, T. Sato, S. Miyajima, A. Yamada, M. Konagai, Effect of thermal annealing on the properties of a-SiCN:H films by hot wire chemical vapor deposition using hexamethyldisilazane, Thin Solid Films, (2008) 516:652-5
[2]A. Badzian, T. Badzian, Recent developments in hard materials, Int J Refract Met H, (1997) 15:3-12
[3]C.-Z. Wang, E.-G. Wang, Q. Dai, First principles calculations of structural properties of beta-Si[sub 3-n]C[sub n]N[sub 4](n=0,1,2,3), J. Appl. Phys., (1998) 83:1975-8
[4]J. E. Lowther, Structural stability of some possible phases of SiC2N4, Phys. Rev. B, (1999) 60:11943
[5]R. Riedel, A. Greiner, G. Miehe, W. Dressier, H. Fuess, J. Bill, F. Aldinger, The first crystalline solids in the ternary Si-C-N system, Angewandte Chemie-International Edition in English, (1997) 36:603-6
[6]R. N. Musin, D. G. Musaev, M. C. Lin, Quantum-Chemical Study of the Structure and Properties of Hypothetical Superhard Materials Based on the Cubic Silicon-Carbon Nitrides, The Journal of Physical Chemistry B, (1999) 103:797-803
[7]E. Betranhandy, L. Capou, S. F. Matar, C. El-Kfoury, First principles search of hard materials within the Si-C-N ternary system, Solid State Sciences, (2004) 6:315-23
[8]C. W. Chen, M. H. Lee, L. C. Chen, K. H. Chen, Structural and electronic properties of wide band gap silicon carbon nitride materials-a first-principles study, Diam. Relat. Mat., (2004) 13:1158-65
[9]D. Y. Lin, C. F. Li, Y. S. Huang, Y. C. Jong, Y. F. Chen, L. C. Chen, C. K. Chen, K. H. Chen, D. M. Bhusari, Temperature dependence of the direct band gap of Si-containing carbon nitride crystalline films, Phys. Rev. B, (1997)56:6498
[10]K. H. Chen, J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y. F. Chen, Y. S. Huang (1999) in Abernathy C. R., Baca A., Buckley D. N., Chen K. H., Kopf R., Sah R. E. (eds), Seattle, Wa
[11]A. Y. Liu, M. L. Cohen, Structural properties and electronic structure of low-compressibility materials: beta-Si3N4 and hypothetical beta-C3N4, Phys. Rev. B, (1990) 41:10727
[12]L. C. Chen, K. H. Chen, J. J. Wu, D. M. Bhusari, M. C. Lin, N. Hari Singh, M.Sc, Ph.D (2001) Silicon-Based Material and DevicesAcademic Press, Burlington
[13]V. M. Ng, M. Xu, S. Y. Huang, J. D. Long, S. Xu, Assembly and photoluminescence of SiCN nanoparticles, Thin Solid Films, (2006) 506:283-7
[14]E. Q. Xie, Z. W. Ma, H. F. Lin, Z. M. Zhang, D. Y. He, Preparation and characterization of SiCN films, Opt. Mater., (2003) 23:151-6
[15]S. Komatsu, Y. Hirohata, S. Fukuda, T. Hino, T. Yamashina, T. Hata, K. Kusakabe, PREPARATION AND CHARACTERIZATION OF REACTIVELY SPUTTERED SICXNY FILMS, Thin Solid Films, (1990) 193:917-23
[16]Z. X. Cao, Nanocrystalline silicon carbonitride thin films prepared by plasma beam-assisted deposition, Thin Solid Films, (2001) 401:94-101
[17]S. K. Mishra, H. Gaur, P. K. P. Rupa, L. C. Pathak, Deposition of nanostructured Si-C-N superhard coatings by rf magnetron sputtering, J. Vac. Sci. Technol. B, (2006) 24:1311-7
[18]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, V. M. Ng, J. D. Long, P. Yang, Growth and visible photoluminescence of SiCxNy/AIN nanoparticle superlattices, Physica E, (2006) 35:81-7
[19]M. A. Fraga, M. Massi, I. C. Oliveira, H. S. Maciel, S. G. dos Santos, R. D. Mansano, Nitrogen doping of SiC thin films deposited by RF magnetron sputtering, J. Mater. Sci.-Mater. Electron., (2008) 19:835-40
[20]J. P. Wang, Y. H. Lu, Y. G Shen, Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films, Appl. Surf. Sci., (2010) 256:1955-60
[21]Y. Q. Fu, C. Q. Sun, H. J. Du, B. B. Yan, Crystalline carbonitride forms harder than the hexagonal Si-carbonitride crystallite, J. Phys. D-Appl. Phys., (2001) 34:1430-5
[22]L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen, Y. C. Jong, Y. S. Huang, Crystalline silicon carbon nitride:A wide band gap semiconductor, Appl. Phys. Lett., (1998) 72:2463-5
[23]L. C. Chen, C. K. Chen, D. M. Bhusari, et al. (1997) in Abernathy C. R., Amano H., Zolper J. C. (eds)Mater. Res. Soc. Symp. Proc., San Francisco, Ca
[24]L. C. Chen, K. H. Chen, S. L. Wei, P. D. Kichambare, J. J. Wu, T. R. Lu, C. T. Kuo, Crystalline SiCN:a hard material rivals to cubic BN, Thin Solid Films, (1999) 356:112-6
[25]S. Zhu, H. W. White (1998) in Johnson R. N., Lee W. Y., Pickering M. A., Sheldon B. W. (eds), Boston, Ma
[26]D. H. Zhang, Y. Gao, J. Wei, Amorphous SiCN films prepared by ECR-CVD technique for photoconductive detectors, Photonics Technology into the 21st Century:Semiconductors, Microstructures, and Nanostructures, (1999) 3899:428-33 552
[27]C. Y. Wen, J. J. Wu, H. J. Lo, L. C. Chen, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin, Methylamine growth of SiCN films using ECR-CVD, Chemical Processing of Dielectrics, Insulators and Electronic Ceramics, (2000) 606:115-20 308
[28]S. L. Sung, C. H. Tseng, F. K. Chiang, X. J. Guo, X. W. Liu, H. C. Shih, A novel approach to the formation of amorphous carbon nitride film on silicon by ECR-CVD, Thin Solid Films, (1999) 340:169-74
[29]C. Y. Wen, J. J. Wu, H. J. Lo, L. C. Chen, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin (1999) in Jones A. C., Veteran J., Mullin D., Cooper R., Kaushal S. (eds), Boston, Ma
[30]D. H. Zhang, Y. Gao, J. Wei, Z. Q. Mo, Influence of silane partial pressure on the properties of amorphous SiCN films prepared by ECR-CVD, Thin Solid Films, (2000) 377:607-10
[31]H. C. Lo, J. J. Wu, C. Y Wen, T. S. Wong, S. T. Lin, K. H. Chen, L. C. Chen, Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation, Diam. Relat. Mat., (2001) 10:1916-20
[32]D. Sarangi, R. Sanjines, A. Karimi, Effect of silicon doping on the mechanical and optical properties of carbon nitride thin films, Thin Solid Films, (2004) 447-448:217-22
[33]I. Ferreira, E. Fortunato, P. Vilarinho, A. S. Viana, A. R. Ramos, E. Alves, R. Martins, Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques, J. Non-Cryst. Solids, (2005)352:1361-6
[34]I. Ferreira, E. Fortunato, P. Vilarinho, A. S. Viana, A. R. Ramos, E. Alves, R. Martins, Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques, J. Non-Cryst. Solids, (2006)352:1361-6
[35]A. Izumi, K. Oda, Deposition of SiCN films using organic liquid materials by HWCVD method, Thin Solid Films, (2006)501:195-7
[36]A. Limmanee, M. Otsubo, T. Sato, S. Miyajima, A. Yamada, M. Konagai, Study of the structural properties of a-SiCN: H films using hexamethyldisilazane for high-quality silicon surface passivation, Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on, (2006) 1: 1227-30
[37]A. Izumi, T. Nakayamada, Formation of highly transparent SiCN films prepared by HWCVD, Advances in Science and Technology, (2008) 54:223-6
[38]T. Nakayamada, K. Matsuo, Y. Hayashi, A. Izumi, Y Kadotani, Evaluation of corrosion resistance of SiCN films deposited by HWCVD using organic liquid materials, Thin Solid Films, (2008) 516:656-8
[39]A. Izumi, T. Nakayamada, Formation of highly transparent SiCN films prepared by HWCVD, Adv Sci Tech, (2009) 54:223-6
[40]E. G Wang, C. Z. Wang, C. F. Chen, Y. Chen (1997) in Siegal M. P., Milne W I., Jaskie J. E. (eds), Boston, Ma
[41]S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, J. J. Ho, Cubic single-crystalline Sil-x-yCxNy films with mirror face prepared by RTCVD, Electrochem. Solid State Lett., (2001) 4:G91-G3
[42]S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, J. J. Ho, Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition, J. Electron. Mater., (2002) 31:1341-6
[43]N. M. Park, S. H. Kim, G. Y. Sung, Band gap engineering of SiCN film grown by pulsed laser deposition, J. Appl. Phys., (2003) 94:2725-8
[44]X. B. Yan, B. K. Tay, G Chen, S. R. Yang, Synthesis of silicon carbide nitride nanocomposite films by a simple electrochemical method, Electrochem. Commun., (2006) 8:737-40
[45]N. Nakayama, Y Tsuchiya, S. Tamada, K. Kosuge, S. Nagata, K. Takahiro, S. Yamaguchi, Mc, STRUCTURAL-PROPERTIES OF AMORPHOUS-CARBON NITRIDE FILMS PREPARED BY REACTIVE RF-MAGNETRON SPUTTERING, Jpn. J. Appl. Phys. Part 2-Lett., (1993) 32:L1465-L8
[46]H. Lutz, M. Bruns, F. Link, H. Baumann (1998), Garmisch Partenki, Germany
[47]H. Lutz, M. Bruns, F. Link, H. Baumann, Surface- and microanalytical characterization of silicon-carbonitride thin films prepared by means of radio-frequency magnetron co-sputtering, Thin Solid Films, (1998)332:230-4
[48]D. V. Shtansky, E. A. Levashov, A. N. Sheveiko, J. J. Moore, The structure and properties of Ti-B-N, Ti-Si-B-N, Ti-Si-C-N, and Ti-Al-C-N coatings deposited by magnetron sputtering using composite targets produced by self-propagating high-temperature synthesis (SHS), Journal of Materials Synthesis and Processing, (1998) 6:61-72
[49]H. Lutz, M. Bruns, F. Link, H. Baumann, Synthesis of silicon carbonitride thin films by means of r.f.-sputtering and ion implantation, Surf. Coat. Technol., (1999) 119:419-23
[50]J. J. Wu, C. T. Wu, Y. C. Liao, T. R. Lu, L. C. Chen, K. H. Chen, L. G Hwa, C. T. Kuo, K. J. Ling, Deposition of silicon carbon nitride films by ion beam sputtering, Thin Solid Films, (1999) 356:417-22
[51]X. C. Wu, Y. Y. Wang, Properties of a-SiCxNy:H films produced by reactive-sputtering, Acta Phys. Sin., (1999)48:134-9
[52]H. Gnaser, Negative cluster ions in sputtering of Si, SiC and graphite:Abundance distributions, energy spectra and fragmentation precesses, Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms, (2000) 164:705-14
[53]X. M. He, T. N. Taylor, R. S. Lillard, K. C. Walter, M. Nastasi, Bonding structure and properties of ion enhanced reactive magnetron sputtered silicon carbonitride films, J. Phys.-Condes. Matter, (2000) 12: L591-L7
[54]J. Wei, Y. Gao, D. H. Zhang, P. Hing, Z. Q. Mo, Growth of sign films by magnetron sputtering, Surf. Eng., (2000) 16:225-8
[55]X. C. Xiao, Y. W. Li, L. X. Song, X. F. Peng, X. F. Hu, Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N-2 and Ar, Appl. Surf. Sci., (2000) 156:155-60
[56]X. C. Xiao, L. X. Song, W. H. Jiang, X. F. Peng, X. F. Hu, Influence of sputtering process on the deposition and optical properties of SiCN films, J. Inorg. Mater., (2000) 15:717-21
[57]Z. Alizadeh, K. B. Sundaram, S. Seal, The effect of nitrogen on the chemistry of sputter-deposited SiCxNy films, Appl. Surf. Sci., (2001) 183:270-7
[58]T. Berlind, N. Hellgren, M. P. Johansson, L. Hultman, Microstructure, mechanical properties, and wetting behavior of Si-C-N thin films grown by reactive magnetron sputtering, Surf. Coat. Technol., (2001) 141:145-55
[59]X. F. Peng, L. X. Song, J. Le, X. F. Hu (2001), Santa Clara, California
[60]X. F. Peng, L. X. Song, J. Meng, Y. Z. Zhang, X. F. Hu, Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target, Appl. Surf. Sci., (2001) 173:313-7
[61]H. Y. Lin, Y. C. Chen, C. Y. Lin, Y P. Tong, L. G. Hwa, K. H. Chen, L. C. Chen, Field emission of nanostructured amorphous SiCN films deposited by reactive magnetron sputtering of SiC in CH4/N-2 atmosphere, Thin Solid Films, (2002) 416:85-91
[62]X. F. Peng, L. X. Song, J. Le, X. F. Hu, Spectra characterization of silicon carbonitride thin films by reactive radio frequency sputtering, J. Vac. Sci. Technol. B, (2002) 20:159-63
[63]J. Vlcek, M. Kormunda, J. Cizek, V. Perina, J. Zemek, Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films, Surf. Coat. Technol., (2002) 160:74-81
[64]X. C. Wu, R. Q. Cai, P. X. Yan, W. M. Liu, J. Tian, SiCN thin film prepared at room temperature by r.f. reactive sputtering, Appl. Surf. Sci., (2002) 185:262-6
[65]G. Radnoczi, G. Safran, Z. Czigany, T. Berlind, L. Hultman, Structure of DC sputtered Si-C-N thin films, Thin Solid Films, (2003) 440:41-4
[66]J. Vlcek, M. Kormunda, J. Cizek, Z. Soukup, V. Perina, J. Zemek, Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties, Diam. Relat. Mat., (2003) 12:1287-94
[67]M. Bruns, U. Geckle, V Trouillet, M. Rudolphi, H. Baumann (2004), Anaheim, CA
[68]J. J. Li, W. T. Zheng, C. Z. Gu, Z. S. Jin, Electron field emission from silicon tip arrays coated by magnetron sputtering carbon nitride film, Solid State Commun, (2004) 132:253-7
[69]E. J. Liang, J. W. Zhang, J. Leme, C. Moura, L. Cunha, Raman analysis of Si-C-N films grown by reactive magnetron sputtering, Thin Solid Films, (2004) 469-70:410-5
[70]E. J. Liang, J. W. Zhang, J. Leme, C. Moura, L. Cunha (2004), San Diego, CA
[71]T. T. Sun, Y. Q. Fu, J. Wei, H. J. Du, Nitrogen contents on tribological properties of magnetron sputtered SiCN coatings,14th Congress of International Federation for Heat Treatment and Surface Engineering, Vols 1 and 2, Proceedings, (2004) 25:854-7
[72]K. B. Sundaram, Z. Alizadeh, R. M. Todi, V. H. Desai, Investigations on hardness of rf sputter deposited SiCN thin films, Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process., (2004) 368:103-8
[73]M. Xu, V. M. Ng, S. Y. Huang, S. Y. Xu, Low-temperature growth and photoluminescence of SiCN nanoparticle film by consecutive RF magnetron sputtering, Surf. Rev. Lett., (2004) 11:515-9
[74]M. Bruns, U. Geckle, V. Trouillet, M. Rudolphi, H. Baumann, Tailored stoichiometries of silicon carbonitride thin films prepared by combined radio frequency magnetron sputtering and ion beam synthesis, J. Vac. Sci. Technol. A, (2005) 23:1114-9
[75]P. Gao, J. Xu, Y. Piao, W. Y. Ding, D. H. Wang, X. L. Deng, C. Dong (2005), Qingdao, PEOPLES R CHINA
[76]S. Y. Huang, S. Xu, J. D. Long, Z. H. Dai, Y. P. Sun, Synthesis and property study of nanoparticle quaternary semiconductor SiCAIN films with co-sputtering under lower temperature, Surf. Rev. Lett., (2005) 12:397-400
[77]F. S. Liu, W. J. Ma, Q. L. Liu, J. K. Liang, J. Luo, L. T. Yang, G. B. Song, Y. Zhang, G. H. Rao, Photoluminescence and characteristics of terbium-doped AlN film prepared by magnetron sputtering, Appl. Surf. Sci., (2005) 245:391-9
[78]T. Usui, H. Nasu, T. Watanabe, H. Shibata, T. Oki, M. Hatano, Electromigration diffusion mechanism of electroplated copper and cold/hot two-step sputter-deposited aluminum-0.5-wt % copper damascene interconnects, J. Appl. Phys., (2005) 98:6
[79]R. M. Todi, A. P. Warren, K. B. Sundaram, K. R. Coffey, X-ray photoelectron spectroscopy analysis of oxygen annealed radio frequency sputter deposited SiCN thin films, J. Electrochem. Soc., (2006) 153: G640-G3
[80]M. Xu, S. Xu, V. M. Ng, S. Y. Huang, J. W. Chai, J. D. Long, Visible photoluminescence in SiCN nanoparticle films grown by plasma rf magnetron sputtering, Int. J. Mod. Phys. B, (2006) 20:73-83
[81]X. W. Du, Y. Fu, J. Sun, P. Yao, L. Cui, Intensive light emission from SiCN films by reactive RF magnetron sputtering, Mater. Chem. Phys., (2007) 103:456-60
[82]P. Gao, J. Xu, Y. Piao, W. Y. Ding, D. H. Wang, X. L. Deng, C. Dong, J. X. Peng Gao, Yong Piaoa, Wanyu Ding, Dehe Wang, Xinlu Deng and Chuang Donga, Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering, Surf. Coat. Technol., (2007) 201: 5298-301
[83]H. Hoche, D. Allebrandt, M. Bruns, R. Riedel, C. Fasel (2007), Nagasaki, JAPAN
[84]S. L. Ma, B. Xu, G. Z. Wu, Y. F. Wang, F. Ma, D. Y. Ma, K. W. Xu, T. Bell (2007), Nagasaki, JAPAN
[85]S. K. Mishra, C. Shekhar, P. K. P. Rupa, L. C. Pathak, Effect of pressure and substrate temperature on the deposition of nano-structured silicon-carbon-nitride superhard coatings by magnetron sputtering, Thin Solid Films, (2007) 515:4738-44
[86]H. Hoche, D. Allebrandt, M. Bruns, R. Riedel, C. Fasel, Relationship of chemical and structural properties with the tribological behavior of sputtered SiCN films, Surf. Coat. Technol., (2008) 202:5567-71
[87]S. L. Ma, B. Xu, G Z. Wu, Y. F. Wang, F. Ma, D. Y. Ma, K. W. Xu, T. Bell, Microstructure and mechanical properties of SiCN hard films deposited by an arc enhanced magnetic sputtering hybrid system, Surf. Coat. Technol., (2008) 202:5379-82
[88]S. K. Mishra, A. S. Bhattacharyya, Effect of substrate temperature on the adhesion properties of magnetron sputtered nano-composite Si-C-N hard thin films, Mater. Lett., (2008) 62:398-402
[89]R. H. Wei (2008), San Diego, CA
[90]A. S. Bhattacharyya, G. C. Das, S. Mukherjee, S. K. Mishra, Effect of radio frequency and direct current modes of deposition on protective metallurgical hard silicon carbon nitride coatings by magnetron sputtering, Vacuum, (2009) 83:1464-9
[91]Z. Y. Chen, H. F. Lin, J. Y. Zhou, Z. W. Ma, E. Q. Xie, IR studies of SiCN films deposited by RF sputtering method, Journal of Alloys and Compounds, (2009) 487:531-6
[92]W. L. Li, J. L. Yang, Y. Zhao, W. D. Fei, Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target, Journal of Alloys and Compounds, (2009) (In Press, Accepted Manuscript)
[93]W. L. Li, J. L. Yang, Y. Zhao, W. D. Fei, Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target, Journal of Alloys and Compounds, (2009) 482:317-9
[94]S. K. Mishra, Nano and Nanocomposite Superhard Coatings of Silicon Carbonitride and Titanium Diboride by Magnetron Sputtering, Int. J. Appl. Ceram. Technol., (2009) 6:345-54
[95]E. Tomasella, L. Spinelle, A. Bousquet, F. Rebib, M. Dubois, C. Eypert, J. P. Gaston, J. Cellier, T. Sauvage, Structural and Optical Investigations of Silicon Carbon Nitride Thin Films Deposited by Magnetron Sputtering, Plasma Process. Polym., (2009) 6:S11-S6
[96]J. Wan, Z. B. Ma, H. Cao, Z. H. Wu, J. H. Wang, Preparation of SiCN crystals using microwave plasma CVD assisted by pulsed nitrogen ion beam sputtering, New Carbon Mater., (2010) 25:48-52
[97]K. H. Chen, J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y. F. Chen, Y. S. Huang, Wide band gap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition, Thin Solid Films, (1999) 356:205-9
[98]A. Y. Liu, M. L. Cohen, Structural properties and electronic structure of low-compressibility materials: beta-Si_{3}N_{4} and hypothetical beta-C_{3}N_{4}, Phys. Rev. B, (1990) 41:10727
[99]W. R. Chang, Y. K. Fang, S. F. Ting, S. F. Chen, C. Y. Lin, S. B. Hwang, C. N. Chang, The contact characteristics of SiCN films for opto-electrical devices applications, J. Electron. Mater., (2004) 33:181-4
[100]W. R. Chang, Y. K. Fang, S. F. Ting, Y. S. Tsair, C. N. Chang, C. Y. Lin, S. F. Chen, The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications, IEEE Electron Device Lett., (2003) 24:565-7
[101]S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, J. J. Ho, A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications, IEEE Electron Device Lett., (2002) 23:142-4
[102]Z. G. He, G. Carter, J. S. Colligon, Ion-assisted deposition of C-N and Si-C-N films, Thin Solid Films, (1996)283:90-6
[103]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, J. D. Long, Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer, J. Non-Cryst. Solids, (2006) 352:5463-8
[104]X. W. Du, Y. Fu, J. Sun, P. Yao, The effect of annealing atmosphere on photoluminescent properties of SiCN films, Surf. Coat. Technol., (2007) 201:5404-7
[105]X. W. Du, Y. Fu, J. Sun, P. Yao, The evolution of microstructure and photoluminescence of SiCN films with annealing temperature, J. Appl. Phys., (2006) 99:4
[106]H. L. Chang, C. T. Kuo (2000), Kowloon, Peoples R China
[107]L. Y. Yang, D. H. Zhang, C. Y. Li, R. Liu, P. W. Lu, P. D. Foo, A. T. S. Wee, Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration, Thin Solid Films, (2006) 504:265-8
[108]L. Zhang, Y. W. Chen, C. Y. Li, C. Li, L. Y. Wong, H. Y. Li, S. Balakumar, H. S. Park, Defect study on Nanoglass (R) E porous ultra-low k material (k similar to 2.2) for ultra-large-scale integration applications, Mater. Sci. Semicond. Process, (2004) 7:89-93
[109]J. Martin, T. Stephens, F. Huang, et al., Integration of SiCN as a low kappa etch stop and Cu passivation in a high performance Cu/low kappa interconnect, Proceedings of the Ieee 2002 International Interconnect Technology Conference, (2002):42-4
[110]L. Y. Yang, D. H. Zhang, C. Y. Li, P. W. Lu, P. D. Foo, SiCN and Ta/TaN barriers for Cu/Ultra low k integration in 0.13 mu m technology, P Soc Photo-Opt Ins, (2004) 5774:454-7 654
[111]D. H. Zhang, L. Y. Yang, C. Y. Li, P. W. Lu, P. D. Foo, Ta/SiCN bilayer barrier for Cu-ultra low k integration, Thin Solid Films, (2006) 504:235-8
[112]Z. Alizadeh, K. B. Sundaram, Electrical studies on amorphous silicon carbide nitride films, Journal of Materials Science Letters, (2002) 21:7-8
[113]M. A. Fraga, M. Massi, I. C. Oliveira, N. C. Cruz, S. G. D. S. Filho, Electrical and Mechanical Properties of Post-Annealed SiCxNy Films, Materials Science Forum (2009) 615-617:327-30
[114]Y. F. Zhang, X. Zhao, X. F. Cheng, Y. G. Mu, Density functional Study on electronic properties of P-doped spinel silicon carbon nitride, J. Solid State Chem., (2008) 181:2113-6
[115]Y. C. Chou, S. Chattopadhyaya, L. C. Chen, Y. F. Chen, K. H. Chen (2002), Granada, Spain
[1]H. O. Pierson (1999), Second Edition edn. Noyes, New York
[2]D. M. Mattox (2003) William Andrew Publishing, New York
[3]K. Wasa, S. Hayakawa (1992) Noyes, New York
[4]K. S. S. Harsha (2005) Elsevier Science & Technology, Oxford
[5]D. M. Mattox (1998) Film Formation, Adhesion, Surface Preparation and Contamination Control Noyes Westwood
[6]C. F. Powell, J. H. Oxley, J. M. Blocher (1996) Wiley, New York
[7]R. F. Bunshah (1994),2nd Edition edn. Noyes, Park Ridge, NJ
[8]田民波(2006)薄膜技术与薄膜材料.清华大学出版社,北京
[9]郑伟涛(2003)薄膜材料与薄膜技术.化学工业出版社,北京
[10]W. Kern (1993) Noyes New Jersey
[11]美.P. A. Kinzie,陈道龙译(1980)热电偶测温.原子能出版社,北京
[12]何崇智,郗秀荣,孟庆恩(1988)X射线衍射实验技术.上海科学技术出版社,上海
[13]P. F. Fewster (2000) Imperial College Press, World Scientific, Singapore
[14]M. Birkholz, P. F. Fewster, C. Genzel (2006) Wiley-VCH, Weinheim, Germany
[15]R. Grieken, A. Markowicz (2002) Marcel Dekker, New York
[16]H. G Tompkins, W. A. McGahan (1999) Wiley & Sons
[17]H. G Tompkins, E. A. Irene (2005) Springer
[18]R. L. Sun, G. Benoit (2004),
[19]S. Trusso, F. Barreca, F. Neri, Bonding configurations and optical band gap for nitrogenated amorphous silicon carbide films prepared by pulsed laser ablation, J. Appl. Phys., (2002) 92:2485-9
[20]郑顺旋(1985)激光喇曼光谱学.上海科学技术出版社,上海
[21]左声演(2000)材料现代分析方法.北京工业大学出版社,北京
[22]马如璋,徐祖雄(1997)材料物理现代研究方法.冶金工业出版社,北京
[23]M. J. Pelletier, C. C. Pelletier (2005) in Worsfold P., Townshend A., Poole C. (eds)Encyclopedia of Analytical Science Second Edition edn. Academic Press, London
[24]G. Turrell, J. Corset (1996) Academic Press,
[25]J. R. Ferraro, K. Nakamoto, C. W. Brown (2003), Second Edition edn. Academic Press, New York
[26]I. R. Lewis, H. G M. Edwards (2001) From the Research Laboratory to the Process LineMarcel Dekker, New York
[27]刘世宏,王当憨,潘承璜(1988)X射线光电子能谱分析.科学出版社,北京
[28]M. Ohring (2002), Second Edition edn. Academic Press, San Diego
[29]C. R. Brundle, C. A. E. Jr., S. Wilson (1992) Encyclopedia of Materials CharacterizationManning Publications Co., Butterworth-Heinemann, Boston
[30]G F. McGuire (1989) William Andrew Publishing, Noyes
[31]E. N. Kaufmann (2003) in Kaufinann E. N. (ed)Wiley, New Jersey
[32]吴刚(2001)材料结构表征及应用.化工工业出版社,北京
[33]H. Bubert, H. Jenett (2002) Wiley-VCH, Weinheim
[34]G Gauglitz, T. Vo-Dinh (2003) in Gauglitz G., Vo-Dinh T. (eds)Wiley,
[35]周名成,俞汝勤编(1986)紫外与可见分光光度分析法.化学工业出版社,北京
[36]陈国珍,黄贤智,郑朱梓等编著(1990)荧光分析法(第二版).科学出版社,北京
[1]L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen, Y. C. Jong, Y. S. Huang, Crystalline silicon carbon nitride:A wide band gap semiconductor, Appl. Phys. Lett., (1998) 72:2463-5
[2]L. C. Chen, C. K. Chen, D. M. Bhusari, et al. (1997) in Abernathy C. R., Amano H., Zolper J. C. (eds)Mater. Res. Soc. Symp. Proc., San Francisco, Ca
[3]L. C. Chen, K. H. Chen, S. L. Wei, P. D. Kichambare, J. J. Wu, T. R. Lu, C. T. Kuo, Crystalline SiCN:a hard material rivals to cubic BN, Thin Solid Films, (1999) 356:112-6
[4]S. Zhu, H. W. White (1998) in Johnson R. N., Lee W. Y., Pickering M. A., Sheldon B. W. (eds), Boston, Ma
[5]K. H. Chen, J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y. F. Chen, Y. S. Huang (1999) in Abernathy C. R., Baca A., Buckley D. N., Chen K. H., Kopf R., Sah R. E. (eds), Seattle, Wa
[6]D. H. Zhang, Y. Gao, J. Wei, Amorphous SiCN films prepared by ECR-CVD technique for photoconductive detectors, Photonics Technology into the 21st Century:Semiconductors, Microstructures, and Nanostructures, (1999) 3899:428-33 552
[7]C. Y. Wen, J. J. Wu, H. J. Lo, L. C. Chen, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin, Methylamine growth of SiCN films using ECR-CVD, Chemical Processing of Dielectrics, Insulators and Electronic Ceramics, (2000) 606:115-20 308
[8]S. L. Sung, C. H. Tseng, F. K. Chiang, X. J. Guo, X. W. Liu, H. C. Shih, A novel approach to the formation of amorphous carbon nitride film on silicon by ECR-CVD, Thin Solid Films, (1999) 340:169-74
[9]C. Y. Wen, J. J. Wu, H. J. Lo, L. C. Chen, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin (1999) in Jones A. C., Veteran J., Mullin D., Cooper R., Kaushal S. (eds), Boston, Ma
[10]D. H. Zhang, Y. Gao, J. Wei, Z. Q. Mo, Influence of silane partial pressure on the properties of amorphous SiCN films prepared by ECR-CVD, Thin Solid Films, (2000) 377:607-10
[11]H. C. Lo, J. J. Wu, C. Y. Wen, T. S. Wong, S. T. Lin, K. H. Chen, L. C. Chen, Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation, Diam. Relat. Mat., (2001) 10:1916-20
[12]D. Sarangi, R. Sanjines, A. Karimi, Effect of silicon doping on the mechanical and optical properties of carbon nitride thin films, Thin Solid Films, (2004) 447-448:217-22
[13]I. Ferreira, E. Fortunato, P. Vilarinho, A. S. Viana, A. R. Ramos, E. Alves, R. Martins, Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques, J. Non-Cryst. Solids, (2005)352:1361-6
[14]I. Ferreira, E. Fortunato, P. Vilarinho, A. S. Viana, A. R. Ramos, E. Alves, R. Martins, Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques, J. Non-Cryst. Solids, (2006)352:1361-6
[15]A. Izumi, K. Oda, Deposition of SiCN films using organic liquid materials by HWCVD method, Thin Solid Films, (2006) 501:195-7
[16]A. Limmanee, M. Otsubo, T. Sato, S. Miyajima, A. Yamada, M. Konagai, Study of the structural properties of a-SiCN:H films using hexamethyldisilazane for high-quality silicon surface passivation, Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on, (2006) 1: 1227-30
[17]A. lzumi, T. Nakayamada, Formation of highly transparent SiCN films prepared by HWCVD, Advances in Science and Technology, (2008) 54:223-6
[18]T. Nakayamada, K. Matsuo, Y. Hayashi, A. Izumi, Y. Kadotani, Evaluation of corrosion resistance of SiCN films deposited by HWCVD using organic liquid materials, Thin Solid Films, (2008) 516:656-8
[19]A. Izumi, T. Nakayamada, Formation of highly transparent SiCN films prepared by HWCVD, Adv Sci Tech, (2009) 54:223-6
[20]E. G. Wang, C. Z. Wang, C. F. Chen, Y. Chen (1997) in Siegal M. P., Milne W. I., Jaskie J. E. (eds), Boston, Ma
[21]S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, J. J. Ho, Cubic single-crystalline Sil-x-yCxNy films with mirror face prepared by RTCVD, Electrochem. Solid State Lett., (2001) 4:G91-G3
[22]S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, J. J. Ho, Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition, J. Electron. Mater., (2002) 31:1341-6
[23]N. M. Park, S. H. Kim, G. Y. Sung, Band gap engineering of SiCN film grown by pulsed laser deposition, J. Appl. Phys., (2003) 94:2725-8
[24]X. B. Yan, B. K. Tay, G. Chen, S. R. Yang, Synthesis of silicon carbide nitride nanocomposite films by a simple electrochemical method, Electrochem. Commun., (2006) 8:737-40
[25]S. Komatsu, Y. Hirohata, S. Fukuda, T. Hino, T. Yamashina, T. Hata, K. Kusakabe, PREPARATION AND CHARACTERIZATION OF REACTIVELY SPUTTERED SICXNY FILMS, Thin Solid Films, (1990) 193:917-23
[26]Y. Gao, J. Wei, D. H. Zhang, Z. Q. Mo, P. Hing, X. Shi, Effects of nitrogen fraction on the structure of amorphous silicon-carbon-nitrogen alloys, Thin Solid Films, (2000) 377:562-6
[27]X. C. Xiao, Y. W. Li, L. X. Song, X. F. Peng, X. F. Hu, Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N-2 and Ar, Appl. Surf. Sci., (2000) 156:155-60
[28]C. Moura, L. Cunha, H. Orfao, K. Pischow, J. De Rijk, M. Rybinski, D. Mrzyk (2002), Garmisch Partenki, Germany
[29]J. Vlcek, M. Kormunda, J. Cizek, V. Perina, J. Zemek, Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films, Surf. Coat. Technol., (2002) 160:74-81
[30]S. K. Mishra, H. Gaur, P. K. P. Rupa, L. C. Pathak, Deposition of nanostructured Si-C-N superhard coatings by rf magnetron sputtering, J. Vac. Sci. Technol. B, (2006)24:1311-7
[31]Z. G. He, G. Carter, J. S. Colligon, Ion-assisted deposition of C-N and Si-C-N films, Thin Solid Films, (1996)283:90-6
[32]H. Lutz, M. Bruns, F. Link, H. Baumann, Synthesis of silicon carbonitride thin films by means of r.f.-sputtering and ion implantation, Surf. Coat. Technol., (1999) 119:419-23
[33]J. J. Wu, C. T. Wu, Y. C. Liao, T. R. Lu, L. C. Chen, K. H. Chen, L. G. Hwa, C. T. Kuo, K. J. Ling, Deposition of silicon carbon nitride films by ion beam sputtering, Thin Solid Films, (1999) 356:417-22
[34]X. C. Wu, Y. Y. Wang, Properties of a-SiCxNy:H films produced by reactive-sputtering, Acta Phys. Sin., (1999)48:134-9
[35]J. Wei, Y. Gao, D. H. Zhang, P. Hing, Z. Q. Mo, Growth of sign films by magnetron sputtering, Surf. Eng., (2000) 16:225-8
[36]Z. X. Cao, Nanocrystalline silicon carbonitride thin films prepared by plasma beam-assisted deposition, Thin Solid Films, (2001) 401:94-101
[37]X. F. Peng, L. X. Song, J. Meng, Y. Z. Zhang, X. F. Hu, Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target, Appl. Surf. Sci., (2001) 173:313-7
[38]L. Cunha, C. Moura, J. Leme, G Andres, K. Pischow (2003), San Diego, California
[39]G. Radnoczi, G. Safran, Z. Czigany, T. Berlind, L. Hultman, Structure of DC sputtered Si-C-N thin films, Thin Solid Films, (2003) 440:41-4
[40]E. Q. Xie, Z. W. Ma, H. F. Lin, Z. M. Zhang, D. Y. He, Preparation and characterization of SiCN films, Opt. Mater., (2003)23:151-6
[41]P. Gao, J. Xu, Y. Piao, W. Y. Ding, D. H. Wang, X. L. Deng, C. Dong, J. X. Peng Gao, Yong Piaoa, Wanyu Ding, Dehe Wang, Xinlu Deng and Chuang Donga, Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering, Surf. Coat. Technol., (2007) 201: 5298-301
[42]Z. Y. Chen, H. F. Lin, J. Y. Zhou, Z. W. Ma, E. Q. Xie, IR studies of SiCN films deposited by RF sputtering method, Journal of Alloys and Compounds, (2009) 487:531-6
[43]W. L. Li, J. L. Yang, Y. Zhao, W. D. Fei, Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target, Journal of Alloys and Compounds, (2009) 482:317-9
[44]E. Tomasella, L. Spinelle, A. Bousquet, F. Rebib, M. Dubois, C. Eypert, J. P. Gaston, J. Cellier, T. Sauvage, Structural and Optical Investigations of Silicon Carbon Nitride Thin Films Deposited by Magnetron Sputtering, Plasma Process. Polym., (2009) 6:S11-S6
[45]Y. Q. Peng, J. C. Zhou, Z. C. Zhang, B. X. Zhao, X. C. Tan, Influence of radiofrequency power on compositional, structural and optical properties of amorphous silicon carbonitride films, Appl. Surf. Sci., (2010)256:2189-92
[46]E. J. Liang, J. W. Zhang, J. Leme, C. Moura, L. Cunha (2004), San Diego, CA
[47]S. K. Mishra, C. Shekhar, P. K. P. Rupa, L. C. Pathak, Effect of pressure and substrate temperature on the deposition of nano-structured silicon-carbon-nitride superhard coatings by magnetron sputtering, Thin Solid Films, (2007) 515:4738-44
[48]S. K. Mishra, A. S. Bhattacharyya, Effect of substrate temperature on the adhesion properties of magnetron sputtered nano-composite Si-C-N hard thin films, Mater. Lett., (2008) 62:398-402
[49]X. C. Xiao, L. X. Song, W. H. Jiang, X. F. Peng, X. F. Hu, Influence of sputtering process on the deposition and optical properties of SiCN films, J. Inorg. Mater., (2000) 15:717-21
[50]T. T. Sun, Y. Q. Fu, J. Wei, H. J. Du, Nitrogen contents on tribological properties of magnetron sputtered SiCN coatings,14th Congress of International Federation for Heat Treatment and Surface Engineering, Vols 1 and 2, Proceedings, (2004) 25:854-7
[51]M. A. Fraga, M. Massi, I. C. Oliveira, H. S. Maciel, S. G.dos Santos, R. D. Mansano, Nitrogen doping of SiC thin films deposited by RF magnetron sputtering, J. Mater. Sci.-Mater. Electron., (2008) 19:835-40
[52]K. B. Sundaram, J. Alizadeh, Deposition and optical studies of silicon carbide nitride thin films, Thin Solid Films, (2000) 370:151-4
[53]L. C. Chen, K. H. Chen, J. J. Wu, D. M. Bhusari, M. C. Lin, N. Hari Singh, M.Sc, Ph.D (2001) Silicon-Based Material and DevicesAcademic Press, Burlington
[54]S. L. Ma, B. Xu, G. Z. Wu, Y. F. Wang, F. Ma, D. Y. Ma, K. W. Xu, T. Bell (2007), Nagasaki, JAPAN
[55]A. S. Bhattacharyya, S. K. Mishra, S. Mukherjee, G C. Das, A comparative study of Si-C-N films on different substrates grown by RF magnetron sputtering, Journal of Alloys and Compounds, (2009) 478:474-8
[56]X. F. Peng, L. X. Song, J. Le, X. F. Hu, Spectra characterization of silicon carbonitride thin films by reactive radio frequency sputtering, J. Vac. Sci. Technol. B, (2002) 20:159-63
[57]X. W. Du, Y. Fu, J. Sun, P. Yao, L. Cui, Intensive light emission from SiCN films by reactive RF magnetron sputtering, Mater. Chem. Phys., (2007) 103:456-60
[58]M. Xu, V. M. Ng, S. Y. Huang, S. Y. Xu, Low-temperature growth and photoluminescence of SiCN nanoparticle film by consecutive RF magnetron sputtering, Surf. Rev. Lett., (2004) 11:515-9
[59]E. J. Liang, J. W. Zhang, J. Leme, C. Moura, L. Cunha, Raman analysis of Si-C-N films grown by reactive magnetron sputtering, Thin Solid Films, (2004) 469-70:410-5
[60]J. P. Wang, Y. H. Lu, Y. G.Shen, Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films, Appl. Surf. Sci., (2010) 256:1955-60
[61]H. Hoche, D. Allebrandt, M. Bruns, R. Riedel, C. Fasel, Relationship of chemical and structural properties with the tribological behavior of sputtered SiCN films, Surf. Coat. Technol., (2008) 202:5567-71
[62]M. Y. Chen, D. Li, X. Lin, V. P. Dravid, Y.-W. Chung, M.-S. Wong, W. D. Sproul, Analytical electron microscopy and Raman spectroscopy studies of carbon nitride thin films, Journal of Vacuum Science & Technology A:Vacuum, Surfaces, and Films, (1993) 11:521-4
[63]C. W. Chen, C. C. Huang, Y. Y. Lin, L. C. Chen, K. H. Chen, The affinity of Si-N and Si-C bonding in amorphous silicon carbon nitride (a-SiCN) thin film, Diam. Relat. Mat., (2005) 14:1126-30
[64]W. Zhang, J. T. Wang, Sicxny-H Films Produced from an Rf Discharge of the Sih4-Ch4-Nh3 System, Surf. Coat. Technol., (1991) 50:11-5
[65]J. Y. Wu, C. T. Kuo, P. J. Yang, Growth competition between crystalline silicon carbon nitrides and silicon nitrides deposited on Si wafer by MPCVD, Mater. Chem. Phys., (2001) 72:245-50
[66]W. R. Chang, Y. K. Fang, S. F. Ting, Y. S. Tsair, C. N. Chang, C. Y. Lin, S. F. Chen, The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications, IEEE Electron Device Lett., (2003) 24:565-7
[67]W. R. Chang, Y. K. Fang, S. F. Ting, S. F. Chen, C. Y. Lin, S. B. Hwang, C. N. Chang, The contact characteristics of SiCN films for opto-electrical devices applications, J. Electron. Mater., (2004) 33:181-4
[68]C. H. Hsieh, Y. S. Huang, K. K. Tiong, C. W. Fan, Y. F. Chen, L. C. Chen, J. J. Wu, K. H. Chen, Piezoreflectance study of an Fe-containing silicon carbon nitride crystalline film, J. Appl. Phys., (2000) 87: 280-4
[69]Y. N. Qian, X. M. Ma, W. J. Cheng, Synthesis and characterization of dandelion-shaped SiCN rods,2008 2nd Ieee International Nanoelectronics Conference, Vols 1-3, (2008):289-92 1201
[70]H. L. Chang, C. T. Kuo, Effects of substrate pretreatments and catalyst applications on Si-C-N films and nanotube formations, Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap., (2001) 40:7018-22
[71]V. M. Ng, M. Xu, S. Y. Huang, J. D. Long, S. Xu, Assembly and photoluminescence of SiCN nanoparticles, Thin Solid Films, (2006) 506:283-7
[72]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, V. M. Ng, J. D. Long, P. Yang, Growth and visible photoluminescence of SiCxNy/AlN nanoparticle superlattices, Physica E, (2006) 35:81-7
[73]M. Xu, S. Xu, V. M. Ng, S. Y. Huang, J. W. Chai, J. D. Long, Visible photoluminescence in SiCN nanoparticle films grown by plasma rf magnetron sputtering, Int. J. Mod. Phys. B, (2006) 20:73-83
[74]R. Reyes, C. Legnani, P. M. R. Pinto, M. Cremona, P. J. G. de Araujo, C. A. Achete, Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films, Appl. Phys. Lett., (2003) 82:4017-9
[1]L. C. Chen, C. K. Chen, D. M. Bhusari, et al. (1997) in Abernathy C. R., Amano H., Zolper J. C. (eds)Mater. Res. Soc. Symp. Proc., San Francisco, Ca
[2]L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen, Y. C. Jong, Y. S. Huang, Crystalline silicon carbon nitride:A wide band gap semiconductor, Appl. Phys. Lett., (1998) 72:2463-5
[3]W. R. Chang, Y. K. Fang, S. F. Ting, Y. S. Tsair, C. N. Chang, C. Y. Lin, S. F. Chen, The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications, IEEE Electron Device Lett., (2003) 24:565-7
[4]L. C. Chen, K. H. Chen, J. J. Wu, D. M. Bhusari, M. C. Lin, N. Hari Singh, M.Sc, Ph.D (2001) Silicon-Based Material and Devices Academic Press, Burlington
[5]W. R. Chang, Y. K. Fang, S. F. Ting, S. F. Chen, C. Y. Lin, S. B. Hwang, C. N. Chang, The contact characteristics of SiCN films for opto-electrical devices applications, J. Electron. Mater., (2004) 33:181-4
[6]C. H. Hsieh, Y. S. Huang, K. K. Tiong, C. W. Fan, Y. F. Chen, L. C. Chen, J. J. Wu, K. H. Chen, Piezoreflectance study of an Fe-containing silicon carbon nitride crystalline film, J. Appl. Phys., (2000) 87: 280-4
[7]Y. N. Qian, X. M. Ma, W. J. Cheng, Synthesis and characterization of dandelion-shaped SiCN rods,2008 2nd Ieee International Nanoelectronics Conference, Vols 1-3, (2008):289-92 1201
[8]H. L. Chang, C. T. Kuo, Effects of substrate pretreatments and catalyst applications on Si-C-N films and nanotube formations, Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap., (2001) 40:7018-22
[9]V. M. Ng, M. Xu, S. Y. Huang, J. D. Long, S. Xu, Assembly and photoluminescence of SiCN nanoparticles, Thin Solid Films, (2006) 506:283-7
[10]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, J. D. Long, Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer, J. Non-Cryst. Solids, (2006) 352:5463-8
[11]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, V. M. Ng, J. D. Long, P. Yang, Growth and visible photoluminescence of SiCxNy/AIN nanoparticle superlattices, Physica E, (2006) 35:81-7
[12]M. Xu, V. M. Ng, S. Y. Huang, S. Y. Xu, Low-temperature growth and photoluminescence of SiCN nanoparticle film by consecutive RF magnetron sputtering, Surf. Rev. Lett., (2004) 11:515-9
[13]M. Xu, S. Xu, V. M. Ng, S. Y. Huang, J. W. Chai, J. D. Long, Visible photoluminescence in SiCN nanoparticle films grown by plasma rf magnetron sputtering, Int. J. Mod. Phys. B, (2006) 20:73-83
[14]X. W. Du, Y. Fu, J. Sun, P. Yao, L. Cui, Intensive light emission from SiCN films by reactive RF magnetron sputtering, Mater. Chem. Phys., (2007) 103:456-60
[15]R. Reyes, C. Legnani, P. M. R. Pinto, M. Cremona, P. J. G. de Araujo, C. A. Achete, Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films, Appl. Phys. Lett., (2003) 82:4017-9
[16]L. Y. Yang, D. H. Zhang, C. Y. Li, R. Liu, P. W. Lu, P. D. Foo, A. T. S. Wee, Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration, Thin Solid Films, (2006) 504:265-8
[17]L. Zhang, Y. W. Chen, C. Y. Li, C. Li, L. Y. Wong, H. Y. Li, S. Balakumar, H. S. Park, Defect study on Nanoglass (R) E porous ultra-low k material (k similar to 2.2) for ultra-large-scale integration applications, Mater. Sci. Semicond. Process, (2004) 7:89-93
[18]J. Martin, T. Stephens, F. Huang, et al., Integration of SiCN as a low kappa etch stop and Cu passivation in a high performance Cu/low kappa interconnect, Proceedings of the Ieee 2002 International Interconnect Technology Conference, (2002):42-4
[19]L. Y. Yang, D. H. Zhang, C. Y. Li, P. W. Lu, P. D. Foo, SiCN and Ta/TaN barriers for Cu/Ultra low k integration in 0.13 mu m technology, P Soc Photo-Opt Ins, (2004) 5774:454-7 654
[20]D. H. Zhang, L. Y. Yang, C. Y. Li, P. W. Lu, P. D. Foo, Ta/SiCN bilayer barrier for Cu-ultra low k integration, Thin Solid Films, (2006) 504:235-8
[21]S. Komatsu, Y. Hirohata, S. Fukuda, T. Hino, T. Yamashina, T. Hata, K. Kusakabe, PREPARATION AND CHARACTERIZATION OF REACTIVELY SPUTTERED SICXNY FILMS, Thin Solid Films, (1990) 193:917-23
[22]Z. Alizadeh, K. B. Sundaram, Electrical studies on amorphous silicon carbide nitride films, Journal of Materials Science Letters, (2002) 21:7-8
[23]M. A. Fraga, M. Massi, I. C. Oliveira, N. C. Cruz, S. G. D. S. Filho, Electrical and Mechanical Properties of Post-Annealed SiCxNy Films, Materials Science Forum (2009) 615-617:327-30
[24]Y. F. Zhang, X. Zhao, X. F. Cheng, Y. G. Mu, Density functional Study on electronic properties of P-doped spinel silicon carbon nitride, J. Solid State Chem., (2008) 181:2113-6
[25]Y. C. Chou, S. Chattopadhyaya, L. C. Chen, Y. F. Chen, K. H. Chen (2002), Granada, Spain
[26]X. C. Xiao, L. X. Song, W. H. Jiang, X. F. Peng, X. F. Hu, Influence of sputtering process on the deposition and optical properties of SiCN films, J. Inorg. Mater., (2000) 15:717-21
[27]K. B. Sundaram, J. Alizadeh, Deposition and optical studies of silicon carbide nitride thin films, Thin Solid Films, (2000) 370:151-4
[28]K. B. Sundaram, Z. Alizadeh, R. M. Todi, V. H. Desai, Investigations on hardness of rf sputter deposited SiCN thin films, Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process., (2004) 368:103-8
[1]L. C. Chen, C. K. Chen, D. M. Bhusari, et al. (1997) in Abernathy C. R., Amano H., Zolper J. C. (eds)Mater. Res. Soc. Symp. Proc., San Francisco, Ca
[2]L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen, Y. C. Jong, Y. S. Huang, Crystalline silicon carbon nitride:A wide band gap semiconductor, Appl. Phys. Lett., (1998) 72:2463-5
[3]W. R. Chang, Y. K. Fang, S. F. Ting, Y. S. Tsair, C. N. Chang, C. Y. Lin, S. F. Chen, The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications, IEEE Electron Device Lett., (2003) 24:565-7
[4]L. C. Chen, K. H. Chen, J. J. Wu, D. M. Bhusari, M. C. Lin, N. Hari Singh, M.Sc, Ph.D (2001) Silicon-Based Material and DevicesAcademic Press, Burlington
[5]W. R. Chang, Y. K. Fang, S. F. Ting, S. F. Chen, C. Y. Lin, S. B. Hwang, C. N. Chang, The contact characteristics of SiCN films for opto-electrical devices applications, J. Electron. Mater., (2004) 33:181-4
[6]C. H. Hsieh, Y. S. Huang, K. K. Tiong, C. W. Fan, Y. F. Chen, L. C. Chen, J. J. Wu, K. H. Chen, Piezoreflectance study of an Fe-containing silicon carbon nitride crystalline film, J. Appl. Phys., (2000) 87: 280-4
[7]Y. N. Qian, X. M. Ma, W. J. Cheng, Synthesis and characterization of dandelion-shaped SiCN rods,2008 2nd Ieee International Nanoelectronics Conference, Vols 1-3, (2008):289-92 1201
[8]H. L. Chang, C. T. Kuo, Effects of substrate pretreatments and catalyst applications on Si-C-N films and nanotube formations, Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap., (2001) 40:7018-22
[9]T. W. MacElwee, S. E. Hill, S. Campbell, et al. (2006) Group IV Photonics,2006.3rd IEEE International Conference on,
[10]S. Se-Young, J. Hoon, C. Kwan-Sik, J. H. Shin (2004) Group IV Photonics,2004. First IEEE International Conference on,
[11]S.-Y. Seo, J. H. Shin, Enhancement of the green, visible Tb3+ luminescence from Tb-doped silicon-rich silicon oxide by C co-doping, Appl. Phys. Lett., (2004) 84:4379-81
[12]H. Jeong, J. H. Shin, G. Y. Sung, Ieee (2008) Green, self-luminescent Tb3+ doped silicon oxy-nitride microdisk on Si chip for biosensor applications. Ieee, New York
[13]S. Hassan, M Carravetta, A. L. Hector, L. A. Stebbings, Nonoxide Sol-Gel Synthesis of Terbium-Doped Silicon Nitride Phosphors, J. Am. Ceram. Soc., (2010) 93:1069-73
[14]W. Gao, T. K. Li, Y. Ono, S. T. Hsu, Photoluminescence and electroluminescence studies on Tb-doped silicon rich oxide materials and devices, J Rare Earth, (2006) 24:673-8
[15]Z. Z. Yuan, D. S. Li, M. H. Wang, P. L. Chen, D. Gong, L. Wang, D. Yang, Photoluminescence of Tb3+ doped SiNx films grown by plasma-enhanced chemical vapor deposition, J. Appl. Phys., (2006) 100:083106
[16]A. R. Zanatta, A. Khan, M. E. Kordesch, Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb, J. Phys.-Condes. Matter, (2007) 19:-
[17]T. Roschuk, P. R. J. Wilson, J. Li, O. H. Y. Zalloum, J. Wojcik, P. Mascher, Structure and luminescence of rare earth-doped silicon oxides studied through their X-ray absorption near edge structure and X-ray excited optical luminescence, Phys Status Solidi B, (2010) 247:248-53
[18]N.-M. Park, S. H. Kim, G. Y. Sung, Band gap engineering of SiCN film grown by pulsed laser deposition, J. Appl. Phys., (2003) 94:2725-8
[19]E. Xie, Z. Ma, H. Lin, Z. Zhang, D. He, Preparation and characterization of SiCN films, Opt. Mater., (2003)23:151-6
[20]X. C. Wu, R. Q. Cai, P. X. Yan, W. M. Liu, J. Tian, SiCN thin film prepared at room temperature by r.f. reactive sputtering, Appl. Surf. Sci., (2002) 185:262-6
[21]X. B. Yan, B. K. Tay, G. Chen, S. R. Yang, Synthesis of silicon carbide nitride nanocomposite films by a simple electrochemical method, Electrochem. Commun., (2006) 8:737-40
[22]F. Liu, L. Fu, J. Wang, Z. Liu, H. Li, H. Zhang, Luminescent hybrid films obtained by covalent grafting of terbium complex to silica network, Thin Solid Films, (2002) 419:178-82
[23]N. Chiodini, A. Paleari, G Brambilla, E. R. Taylor, Erbium doped nanostructured tin--silicate glass--ceramic composites, Appl. Phys. Lett., (2002) 80:4449-51
[24]M. Xu, S. Xu, S. Y. Huang, J. W. Chai, J. D. Long, Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer, J. Non-Cryst. Solids, (2006) 352:5463-8
[25]S. Komatsu, Y. Hirohata, S. Fukuda, T. Hino, T. Yamashina, T. Hata, K. Kusakabe, PREPARATION AND CHARACTERIZATION OF REACTIVELY SPUTTERED SICXNY FILMS, Thin Solid Films, (1990) 193:917-23
[26]E. Q. Xie, Z. W. Ma, H. F. Lin, Z. M. Zhang, D. Y. He, Preparation and characterization of SiCN films, Opt. Mater., (2003) 23:151-6
[27]H. Lutz, M. Bruns, F. Link, H. Baumann, Synthesis of silicon carbonitride thin films by means of r.f.-sputtering and ion implantation, Surf. Coat. Technol., (1999) 119:419-23
[28]J. J. Wu, C. T. Wu, Y. C. Liao, T. R. Lu, L. C. Chen, K. H. Chen, L. G Hwa, C. T. Kuo, K. J. Ling, Deposition of silicon carbon nitride films by ion beam sputtering, Thin Solid Films, (1999) 356:417-22
[29]X. C. Wu, Y. Y. Wang, Properties of a-SiCxNy:H films produced by reactive-sputtering, Acta Phys. Sin., (1999)48:134-9
[30]X. M. He, T. N. Taylor, R. S. Lillard, K. C. Walter, M. Nastasi, Bonding structure and properties of ion enhanced reactive magnetron sputtered silicon carbonitride films, J. Phys.-Condes. Matter, (2000) 12: L591-L7
[31]X. C. Xiao, Y. W. Li, L. X. Song, X. F. Peng, X. F. Hu, Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N-2 and Ar, Appl. Surf. Sci., (2000) 156:155-60
[32]X. F. Peng, L. X. Song, J. Meng, Y. Z. Zhang, X. F. Hu, Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target, Appl. Surf. Sci., (2001) 173:313-7
[33]G. Radnoczi, G Safran, Z. Czigany, T. Berlind, L. Hultman, Structure of DC sputtered Si-C-N thin films, Thin Solid Films, (2003) 440:41-4
[34]Z. G He, G. Carter, J. S. Colligon, Ion-assisted deposition of C-N and Si-C-N films, Thin Solid Films, (1996) 283:90-6
[35]M. Bruns, U. Geckle, V. Trouillet, M. Rudolphi, H. Baumann, Tailored stoichiometries of silicon carbonitride thin films prepared by combined radio frequency magnetron sputtering and ion beam synthesis, J. Vac. Sci. Technol. A, (2005) 23:1114-9
[36]X. W. Du, Y. Fu, J. Sun, P. Yao, L. Cui, Intensive light emission from SiCN films by reactive RF magnetron sputtering, Mater. Chem. Phys., (2007) 103:456-60
[37]X. W. Du, Y. Fu, J. Sun, P. Yao, The effect of annealing atmosphere on photoluminescent properties of SiCN films, Surf. Coat. Technol., (2007) 201:5404-7
[38]X. W. Du, Y. Fu, J. Sun, P. Yao, The evolution of microstructure and photoluminescence of SiCN films with annealing temperature, J. Appl. Phys., (2006) 99:4
[39]J. Zhou, M. Zhou, Z. Chen, Z. Zhang, C. Chen, R. Li, X. Gao, E. Xie, SiC nanotubes arrays fabricated by sputtering using electrospun PVP nanofiber as templates, Surface & Coatings Technology, (2009) 203 3219
[40]L. C. Chen, K. H. Chen, S. L. Wei, P. D. Kichambare, J. J. Wu, T. R. Lu, C. T. Kuo, Crystalline SiCN:a hard material rivals to cubic BN, Thin Solid Films, (1999) 355-356:112-6
[41]X.-W. Du, Y. Fu, J. Sun, P. Yao, The evolution of microstructure and photoluminescence of SiCN films with annealing temperature, J. Appl. Phys., (2006) 99:093503-4
[42]X.-W. Du, Y. Fu, J. Sun, P. Yao, The effect of annealing atmosphere on photoluminescent properties of SiCN films, Surface & Coatings Technology, (2007) 201:5404-7
[43]M. T. Kim, J. Lee, Characterization of amorphous SiC:H films deposited from hexamethyldisilazane, Thin Solid Films, (1997) 303:173-9
[44]M. T. Kim, Deposition behavior of hexamethydisiloxane films based on the FTIR analysis of Si-O-Si and Si-CH3 bonds, Thin Solid Films, (1997) 311:157-63
[45]H. Amekura, A. Eckau, R. Carius, C. Buchal, Room-temperature photoluminescence from Tb ions implanted in SiO[sub 2] on Si, J. Appl. Phys., (1998) 84:3867-71
[46]J.-Y. Zhou, Z.-Y. Chen, M. Zhou, X.-P. Gao, E.-Q. Xie, SiC Nanorods Grown on Electrospun Nanofibers Using Tb as Catalyst:Fabrication, Characterization, and Photoluminescence Properties, Nanoscale Res. Lett., (2009)4:814-9
[47]M.-H. Du, S. C. Erwin, A. L. Efros, Trapped-Dopant Model of Doping in Semiconductor Nanocrystals, Nano Letters, (2008) 8:2878-82
[48]Z. Chen, Y. Wang, H. He, Y. Zou, J. Wang, Y. Li, Mechanism of intense blue photoluminescence in silica wires, Solid State Commun., (2005) 135:247-50
[49]K. F. Cai, A. X. Zhang, J. L. Yin, H. F. Wang, X. H. Yuan, Preparation, characterization and photoluminescence properties of ultra long SiC/SiOx nanocables, Appl. Phys. A, (2008) 91:579-84
[50]X. M. Liu, K. F. Yao, Large-scale synthesis and photoluminescence properties of SiC/SiOx nanocables, Nanotechnology, (2005) 16:2932-5
[51]D. H. Feng, T. Q. Jia, X. X. Li, Z. Z. Xu, J. Chen, S. Z. Deng, Z. S. Wu, N. S. Xu, Catalytic synthesis and photoluminescence of needle-shaped 3C-SiC nanowires, Solid State Commun., (2003) 128:295-7
[52]C. H. Kam, S. Buddhudu, Emission properties of GdOBr:Ce3+ and Tb3+ phosphors, Mater. Lett., (2002) 54:337-42
[53]Z. Li, J. Zhang, A. Meng, J. Guo, Large-Area Highly-Oriented SiC Nanowire Arrays:Synthesis, Raman, and Photoluminescence Properties, J. Phys. Chem. B, (2006) 110:22382-6
[54]F. J. Gomez, P. Prieto, E. Elizalde, J. Piqueras, SiCN alloys deposited by electron cyclotron resonance plasma chemical vapor deposition, Appl. Phys. Lett., (1996) 69:773-5
[55]P. Jedrzejowski, J. Cizek, A. Amassian, J. E. Klemberg-Sapieha, J. Vlcek, L. Martinu, Mechanical and optical properties of hard SiCN coatings prepared by PECVD, Thin Solid Films, (2004) 447-448:201-7
[56]K. Yamamoto, Y. Koga, S. Fujiwara, XPS studies of amorphous SiCN thin films prepared by nitrogen ion-assisted pulsed-laser deposition of SiC target, Diam. Relat. Mater., (2001) 10:1921-6
[57]K. H. Chen, J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y. F. Chen, Y. S. Huang, Wide band gap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition, Thin Solid Films, (1999) 355-356:205-9
[58]B. D. Padalia, W. C. Lang, P. R. Norris, L. M. Watson, D. J. Fabian, X-ray photoelectron core-level studies of the heavy rare-earth metals and their oxides Proc. R. Soc. Lond. A., (1977) 354:269-90
[59]G. L. P. Berning, H. C. Swart, A study of the oxide grown on Tb and terbium silicide by XPS, AES and XRD, Appl. Surf. Sci., (1994) 78:339-43
[60]X.-H. Lu, G.-R. Li, X.-L. Yu, Y.-X. Tong, Electrochemical Synthesis and Characterization of TbO2-x Flowerlike Nanostructures, Electrochem. Solid-State Lett., (2008) 11:K85-K8
[61]M. A. Fraga, M. Massi, I. C. Oliveira, H. S. Maciel, S. G dos Santos, R. D. Mansano, Nitrogen doping of SiC thin films deposited by RF magnetron sputtering, J. Mater. Sci.-Mater. Electron., (2008) 19:835-40
[62]H. Lutz, M. Bruns, F. Link, H. Baumann, Surface- and microanalytical characterization of silicon-carbonitride thin films prepared by means of radio-frequency magnetron co-sputtering, Thin Solid Films, (1998) 332:230-4
[63]C. Fernandez-Ramos, J. C. Sanchez-Lopez, T. C. Rojas, A. Fernadndez, Structural modifications of silicon-doped carbon nitride films during post-deposition annealing, Diam. Relat. Mat., (2003) 12:1055-60
[64]Y. Zhao, J. Xu, W. Ding, M. Zhang, W. Lu, Characterization of oxygen impurities in SiCN films, Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, (2009) 29:26-30
[65]A. G. D. La Rocque, G. Dufour, P. A. Bonnefont, C. Senemaud (1997) in Gonsalves K. E., Baraton M. I., Singh R., Hofmann H., Chen J. X., Akkara J. A. (eds), Boston, Ma
[66]E. J. Liang, J. W. Zhang, J. Leme, C. Moura, L. Cunha, Raman analysis of Si-C-N films grown by reactive magnetron sputtering, Thin Solid Films, (2004) 469-70:410-5
[67]S. Trusso, F. Barreca, F. Neri, Bonding configurations and optical band gap for nitrogenated amorphous silicon carbide films prepared by pulsed laser ablation, J. Appl. Phys., (2002) 92:2485-9
[68]J. P. Wang, Y. H. Lu, Y. G Shen, Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films, Appl. Surf. Sci., (2010) 256:1955-60
[69]A. Limmanee, M. Otsubo, T. Sugiura, T. Sato, S. Miyajima, A. Yamada, M. Konagai, Effect of thermal annealing on the properties of a-SiCN:H films by hot wire chemical vapor deposition using hexamethyldisilazane, Thin Solid Films, (2008) 516:652-5
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