宽禁带半导体器件的研制及其测量技术
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摘要
本学位论文围绕由宽禁带半导体材料SiC和ZnO构成的紫外光电探测器的研制以及宽禁带半导体材料电阻率测量仪器的研制这两方面展开,详细介绍了宽禁带半导体材料ZnO和SiC的性质、材料制备及器件方面的研究,介绍了两者在紫外光电探测器件方面的应用,并重点介绍了四种不同结构的紫外探测器工艺流程、I-V特性、光谱响应特性以及光谱响应随温度、电压的变化,最后还介绍了一台我们研制的基于高精度恒流源的高阻抗四探针测试仪,给出了该四探针测试仪的硬件电路、软件流程等。
宽带隙(WBG)半导体材料ZnO具有禁带宽、激子能量大、高化学稳定性和热稳定性等特点,使得目前高质量ZnO材料和器件的制备成为国际上的研究热点之一。目前ZnO薄膜已经广泛应用于气体传感器、太阳能电池、紫外光电探测及激光器等众多领域。
同为宽带隙半导体材料的SiC具有高临界击穿电场、高热导率、高载流子饱和漂移速度等优点,特别适合制作光电子、抗辐射、高频、大功率、高温、高压等方面的半导体器件。在一些要求较高的器件方面,SiC已经取代传统的Si成为国际上新的研究热点之一。
本论文的研究工作和研究成果主要有:
1)Au/n-ZnO/Au MSM结构的紫外增强光电探测的研制
通过对该器件工艺的介绍,重点分析了该器件的I-V特性和光电流特性,实验结果表明该器件的光谱响应范围从200nm的紫外光波段到可见光波段,具备制成紫外探测器的条件。当工作在4V以上偏置电压时,电容小于3pF,可望用于较高频的环境。
2)Au/n-4H-SiC肖特基紫外光电探测器的研制
介绍了该肖特基器件的工艺流程,重点分析了该器件的光谱响应随偏置电压和环境温度的变化,实验结果表明该器件在高温、高压的极限条件下仍然保持着良好的I-V特性及光谱响应特性。该器件光谱响应范围200～400nm,反偏压下光谱响应灵敏度提高,当工作温度高于260℃时,该器件仍然保持良好的紫外响应特性。
3)Au/n-ZnO/p-Si结构的紫外增强光电三极管的研制
提出了一种以肖特基结作发射极、异质结作集电极的双极型紫外增强型光电三极管(SHBT),测量了该三极管的I-V特性和光谱响应特性。实验结果表明该器件增强了对200nm到400nm之间的紫外波段光谱响应的灵敏度,同时保留了普通硅基光电三极管的可见光特性,其在370nm处紫外光响应灵敏度相比ZnO/Si异质结紫外光电探测器有着5～10倍的提高。
4)Au/n-ZnO/p-SiC结构的紫外光电探测器的研制
对该结构的器件I-V特性和光谱响应特性进行了测量并做了理论上的分析。实验结果表明此结构紫外光电探测器具有良好的紫外响应特性和较低的反向漏电流以及很低的结电容。器件光谱响应范围200～400nm,响应峰值在313nm,响应半宽65nm。室温下,反向工作电压大于5V,反向击穿电压达到70V。
5)高阻抗四探针测试仪的研制
针对目前对宽禁带半导体材料电阻率测量的需求,研制了一台基于精密恒流源电路的高阻抗四探针测试仪,给出了该四探针测试仪的硬件电路和软件流程。其电流源模块量程为lnA-100mA,最小电流分辨率0.5pA,输出电压最高达200V;电压测量模块量程为20mV-2V,输入阻抗高达10~(13)Ω。
The works in this thesis include research on the UV detector based on wide band gap semiconductor material SiC and ZnO,and research on a high impedance 4-point probe instrument.Details on the nature,materials and devices of the research of the wide band gap semiconductor materials ZnO and SiC,introduced the application in the ultraviolet detector of the two material,and focuses on four different structure of the ultraviolet detector process technology,Ⅰ-Ⅴcharacteristics,spectral response characteristics,and spectral response with temperature and voltage changes.Finally introduced a high impedance 4-point probe instrument that we designed based on a high-precision current source,the hardware circuit and the software procedure were given.
There are increasing emphases focused on ZnO,a new kind of wide band gap (WBG)semiconductor material with high exciton binding energy,high chemical and temperature stabilization.ZnO thin film has been used widely in gas sensors,solar cells,UV detector and UV blue photo LED,LDS.
Meanwhile SiC is another excellent WBG semiconductor.It has a lot of good electrical and thermal properties,such as wide band gap,high breakdown field,high thermal conductivity and high saturation electron velocity.These properties make SiC a preferred semiconductor for the fabrication of devices in high temperature,high frequency,high voltage and high power conditions.For some higher required devices, SiC has replaced the traditional Si and become an international hot spot on one of the new study.
The main research works and conclusions are as follows:
1)Research of Au/n-ZnO/Au MSM structure UV enhanced photodetector
Introduced the technics of the device,focuses on the deviceⅠ-Ⅴcharacteristics and photo current response.The experiments shown that the spectral response wavelength range of this device is from 200nm UV-band to visible light,it has the conditions for making UV detectors.When working in more than 4V bias voltage,the node capacitance is less than 3pF,making it possible to be used for high-frequency condition.
2)Research of Au/n-4H-SiC schottky UV detector
Introduced the technics of the device,focuses on analyzing the device's spectral response with the bias voltage and temperature changes.The experiments shown that the device remain goodⅠ-Ⅴcharacteristics and spectral response characteristics even in high-temperature,high pressure under the limit.The spectral response wavelength range is from 200nm to 400nm,the spectral response sensitivity increases in anti-bias condition,good UV response is still maintained when the temperature is higher than 260℃.
3)Research of Au/n-ZnO/p-Si structure UV-enhanced phototransistor
Fabrication and characteristics of Schottky-emitter heterojunction-collector UV-enhanced bipolar phototransistor(SHBT)are presented.The deviceⅠ-Ⅴcharacteristics and photo spectrum response have been tested.The experiments shown that The sensitivity of ultraviolet response from 200nm to 400nm has been enhanced evidently and the wavelength spectrum response of longer than 400nm that is the response wavelength range of traditional Si photo-detector also retained,the UV response sensitivity at 370nm of phototransistor is about 5 times than ZnO/Si hetero-junction UV enhanced photodiode
4)Research of Au/n-ZnO/p-SiC structure UV detector
Test and theoretical analysis has been done about the device characteristics ofⅠ-Ⅴand photo spectrum response of this structure device.The experiments shown that this structure UV detector has a good response of ultraviolet and low reverse leakage current and low node capacitance.The spectral response wavelength range of this device is from 200 to 400nm with peak value at 313nm,and the half width of response wavelength is 65nm.At room temperature,the reverse working voltage is greater than 5V,and the reverse breakdown voltage is 70V.
5)Develop of high impedance 4-point probe instrument
In the light of the wide band gap semiconductor materials resistivity measurement needs,we developed a high-impedance 4-point probe instrument based on a precision current source circuit,the hardware circuit and software processes is given.The current source output range if from 1nA to 100mA,the minimum output current resolution is 0.5pA and maximal output voltage is 200V.The voltage measurement module input range if from 20mV to 2V and the input impedance up to 10~(13)Ω.
宽带隙(WBG)半导体材料ZnO具有禁带宽、激子能量大、高化学稳定性和热稳定性等特点,使得目前高质量ZnO材料和器件的制备成为国际上的研究热点之一。目前ZnO薄膜已经广泛应用于气体传感器、太阳能电池、紫外光电探测及激光器等众多领域。
同为宽带隙半导体材料的SiC具有高临界击穿电场、高热导率、高载流子饱和漂移速度等优点,特别适合制作光电子、抗辐射、高频、大功率、高温、高压等方面的半导体器件。在一些要求较高的器件方面,SiC已经取代传统的Si成为国际上新的研究热点之一。
本论文的研究工作和研究成果主要有:
1)Au/n-ZnO/Au MSM结构的紫外增强光电探测的研制
通过对该器件工艺的介绍,重点分析了该器件的I-V特性和光电流特性,实验结果表明该器件的光谱响应范围从200nm的紫外光波段到可见光波段,具备制成紫外探测器的条件。当工作在4V以上偏置电压时,电容小于3pF,可望用于较高频的环境。
2)Au/n-4H-SiC肖特基紫外光电探测器的研制
介绍了该肖特基器件的工艺流程,重点分析了该器件的光谱响应随偏置电压和环境温度的变化,实验结果表明该器件在高温、高压的极限条件下仍然保持着良好的I-V特性及光谱响应特性。该器件光谱响应范围200～400nm,反偏压下光谱响应灵敏度提高,当工作温度高于260℃时,该器件仍然保持良好的紫外响应特性。
3)Au/n-ZnO/p-Si结构的紫外增强光电三极管的研制
提出了一种以肖特基结作发射极、异质结作集电极的双极型紫外增强型光电三极管(SHBT),测量了该三极管的I-V特性和光谱响应特性。实验结果表明该器件增强了对200nm到400nm之间的紫外波段光谱响应的灵敏度,同时保留了普通硅基光电三极管的可见光特性,其在370nm处紫外光响应灵敏度相比ZnO/Si异质结紫外光电探测器有着5～10倍的提高。
4)Au/n-ZnO/p-SiC结构的紫外光电探测器的研制
对该结构的器件I-V特性和光谱响应特性进行了测量并做了理论上的分析。实验结果表明此结构紫外光电探测器具有良好的紫外响应特性和较低的反向漏电流以及很低的结电容。器件光谱响应范围200～400nm,响应峰值在313nm,响应半宽65nm。室温下,反向工作电压大于5V,反向击穿电压达到70V。
5)高阻抗四探针测试仪的研制
针对目前对宽禁带半导体材料电阻率测量的需求,研制了一台基于精密恒流源电路的高阻抗四探针测试仪,给出了该四探针测试仪的硬件电路和软件流程。其电流源模块量程为lnA-100mA,最小电流分辨率0.5pA,输出电压最高达200V;电压测量模块量程为20mV-2V,输入阻抗高达10~(13)Ω。
The works in this thesis include research on the UV detector based on wide band gap semiconductor material SiC and ZnO,and research on a high impedance 4-point probe instrument.Details on the nature,materials and devices of the research of the wide band gap semiconductor materials ZnO and SiC,introduced the application in the ultraviolet detector of the two material,and focuses on four different structure of the ultraviolet detector process technology,Ⅰ-Ⅴcharacteristics,spectral response characteristics,and spectral response with temperature and voltage changes.Finally introduced a high impedance 4-point probe instrument that we designed based on a high-precision current source,the hardware circuit and the software procedure were given.
There are increasing emphases focused on ZnO,a new kind of wide band gap (WBG)semiconductor material with high exciton binding energy,high chemical and temperature stabilization.ZnO thin film has been used widely in gas sensors,solar cells,UV detector and UV blue photo LED,LDS.
Meanwhile SiC is another excellent WBG semiconductor.It has a lot of good electrical and thermal properties,such as wide band gap,high breakdown field,high thermal conductivity and high saturation electron velocity.These properties make SiC a preferred semiconductor for the fabrication of devices in high temperature,high frequency,high voltage and high power conditions.For some higher required devices, SiC has replaced the traditional Si and become an international hot spot on one of the new study.
The main research works and conclusions are as follows:
1)Research of Au/n-ZnO/Au MSM structure UV enhanced photodetector
Introduced the technics of the device,focuses on the deviceⅠ-Ⅴcharacteristics and photo current response.The experiments shown that the spectral response wavelength range of this device is from 200nm UV-band to visible light,it has the conditions for making UV detectors.When working in more than 4V bias voltage,the node capacitance is less than 3pF,making it possible to be used for high-frequency condition.
2)Research of Au/n-4H-SiC schottky UV detector
Introduced the technics of the device,focuses on analyzing the device's spectral response with the bias voltage and temperature changes.The experiments shown that the device remain goodⅠ-Ⅴcharacteristics and spectral response characteristics even in high-temperature,high pressure under the limit.The spectral response wavelength range is from 200nm to 400nm,the spectral response sensitivity increases in anti-bias condition,good UV response is still maintained when the temperature is higher than 260℃.
3)Research of Au/n-ZnO/p-Si structure UV-enhanced phototransistor
Fabrication and characteristics of Schottky-emitter heterojunction-collector UV-enhanced bipolar phototransistor(SHBT)are presented.The deviceⅠ-Ⅴcharacteristics and photo spectrum response have been tested.The experiments shown that The sensitivity of ultraviolet response from 200nm to 400nm has been enhanced evidently and the wavelength spectrum response of longer than 400nm that is the response wavelength range of traditional Si photo-detector also retained,the UV response sensitivity at 370nm of phototransistor is about 5 times than ZnO/Si hetero-junction UV enhanced photodiode
4)Research of Au/n-ZnO/p-SiC structure UV detector
Test and theoretical analysis has been done about the device characteristics ofⅠ-Ⅴand photo spectrum response of this structure device.The experiments shown that this structure UV detector has a good response of ultraviolet and low reverse leakage current and low node capacitance.The spectral response wavelength range of this device is from 200 to 400nm with peak value at 313nm,and the half width of response wavelength is 65nm.At room temperature,the reverse working voltage is greater than 5V,and the reverse breakdown voltage is 70V.
5)Develop of high impedance 4-point probe instrument
In the light of the wide band gap semiconductor materials resistivity measurement needs,we developed a high-impedance 4-point probe instrument based on a precision current source circuit,the hardware circuit and software processes is given.The current source output range if from 1nA to 100mA,the minimum output current resolution is 0.5pA and maximal output voltage is 200V.The voltage measurement module input range if from 20mV to 2V and the input impedance up to 10~(13)Ω.
引文
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