铌基超导隧道结太赫兹直接检测器
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摘要
自从上个世纪八十年代以来,太赫兹科学与技术逐渐突破了源和检测器的瓶颈得以迅速发展,世界各地的科学家都争先在此领域开发这一新的电磁资源。几乎在同一时期,超导隧道结平面制备工艺也取得重大进展,从而促进了超导电子学的发展。本文就铌基超导隧道结太赫兹直接检测器的设计、制备工艺和测试技术三个方面做了一系列相关的研究工作。主要工作和创新点总结如下：
1.在做超导隧道结太赫兹直接检测器的设计时,采用一种新的分析思路找到所有可能的结配置参数,从而建立起分布式结阵列的设计方法。
2.根据太赫兹直接检测器的需求特点,结合我们现有的实验设备和条件,在传统工艺的基础上发展出来的一套独特的Nb/Al/AlOx/Al/Nb结制备工艺,包括双层胶剥离工艺、PECVD低温生长SiOz、压控恒压源阳极氧化系统等。
3.对于如何降低Nb/Al/AlOx/Al/Nb结漏电流的问题,通过考察单位面积和单位周长漏电流来判断漏电流的来源,从而有针对性地采取措施的去解决问题,分别从薄膜应力、薄膜平整度以及改变结构等方面分析实验,来优化势垒层制备工艺,并使用阳极氧化谱实时检测势垒层的质量。
4.设计了一种低温半导体读出电路与超导太赫兹直接检测器集成化方案来降低测试系统噪声。
5.在3He杜瓦工作温度0.3K下,使用650GHz源辐照太赫兹直接检测器,其1-V曲线上出现多个准粒子台阶,在1mV处漏电流为100nA, NEP为约10-15W/Hz1/2。
Since the1980s, Terahertz(Thz) science and technology have been breaking through the bottleneck of sources and detectors gradually, and developed rapidly. Scientists all over the world have been striving for this new electromagnetic resource. At the same time, the major breakthrough of fabrication of superconducting tunnel junction(STJ) promoted the development of superconducting electronics. Under this scientific background, we designed, prepared and tested THz direct detectors with Nb-based STJs. In this thesis, we focus on these issues as following:
ⅰ. We propose a new analytical approach to find possible junction configuration from all parameter space, and then establish a design method of these distributed junction arrays.
ⅱ. According to the requirement of the THz direct detectors and the existing equipment and conditions in our laboratory, we developed the fabrication process of Nb/AI/AlOx/AI/Nb, including LOR lift-off, SNEP and so on.
ⅲ. The leakage current per unit area and per unit perimeter indicate the leakage current comes from barrier layer. Therefore, we find the optimized parameters for high quality of Nb STJ by systematically analyzing the thin film stress, surface morphology and modified junction structures.
ⅳ. In order to reduce the measurement system noise, we propose a concept of integration of the THz direct detector with Nb STJs and the cryogenic readout with GaAs JFETs.
ⅴ. Finally, the detectors were measured at0.3K, and the quasiparticle steps on its I-V cureve implied the good response to650GHz irradiation. The leakage current at1mV is about100nA, and NEP is about10-15W/Hz1/2
1.在做超导隧道结太赫兹直接检测器的设计时,采用一种新的分析思路找到所有可能的结配置参数,从而建立起分布式结阵列的设计方法。
2.根据太赫兹直接检测器的需求特点,结合我们现有的实验设备和条件,在传统工艺的基础上发展出来的一套独特的Nb/Al/AlOx/Al/Nb结制备工艺,包括双层胶剥离工艺、PECVD低温生长SiOz、压控恒压源阳极氧化系统等。
3.对于如何降低Nb/Al/AlOx/Al/Nb结漏电流的问题,通过考察单位面积和单位周长漏电流来判断漏电流的来源,从而有针对性地采取措施的去解决问题,分别从薄膜应力、薄膜平整度以及改变结构等方面分析实验,来优化势垒层制备工艺,并使用阳极氧化谱实时检测势垒层的质量。
4.设计了一种低温半导体读出电路与超导太赫兹直接检测器集成化方案来降低测试系统噪声。
5.在3He杜瓦工作温度0.3K下,使用650GHz源辐照太赫兹直接检测器,其1-V曲线上出现多个准粒子台阶,在1mV处漏电流为100nA, NEP为约10-15W/Hz1/2。
Since the1980s, Terahertz(Thz) science and technology have been breaking through the bottleneck of sources and detectors gradually, and developed rapidly. Scientists all over the world have been striving for this new electromagnetic resource. At the same time, the major breakthrough of fabrication of superconducting tunnel junction(STJ) promoted the development of superconducting electronics. Under this scientific background, we designed, prepared and tested THz direct detectors with Nb-based STJs. In this thesis, we focus on these issues as following:
ⅰ. We propose a new analytical approach to find possible junction configuration from all parameter space, and then establish a design method of these distributed junction arrays.
ⅱ. According to the requirement of the THz direct detectors and the existing equipment and conditions in our laboratory, we developed the fabrication process of Nb/AI/AlOx/AI/Nb, including LOR lift-off, SNEP and so on.
ⅲ. The leakage current per unit area and per unit perimeter indicate the leakage current comes from barrier layer. Therefore, we find the optimized parameters for high quality of Nb STJ by systematically analyzing the thin film stress, surface morphology and modified junction structures.
ⅳ. In order to reduce the measurement system noise, we propose a concept of integration of the THz direct detector with Nb STJs and the cryogenic readout with GaAs JFETs.
ⅴ. Finally, the detectors were measured at0.3K, and the quasiparticle steps on its I-V cureve implied the good response to650GHz irradiation. The leakage current at1mV is about100nA, and NEP is about10-15W/Hz1/2
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