新型硅基光子晶体调制器研究
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摘要
硅被认为是集成光电子技术重要材料的历史并不长,但在硅材料上制作光器件可以较好的和成熟的CMOS工艺相兼容,有利于将来光电子器件的单片集成。在硅基光电子技术领域中,光调制器作为重要的有源光电子器件,硅调制器却受限于硅的自由载流子色散效应,其调制速度和尺寸都受到限制。电光聚合物具有很高的线性电光系数和极高的响应速度,通过把电光聚合物填充到狭缝波导中,可以在低折射率区(聚合物区)实现高强度光场聚集,这种结构被应用到调制器中将有助于实现大带宽和低调制电压。
传统光调制器受限于普通波导结构,很难实现亚波长级的集成。随着硅基纳米结构制造工艺的不断进步,波长量级或亚波长量级周期性结构,即光子晶体,在控制光传输方面越来越引起广泛的关注。光子晶体波导通过光子带隙对光的传输限制,通过在光子晶体中引入线缺陷或点缺陷,可以实现光的传播或局域化。
本论文结合硅基光子晶体结构,狭缝结构和电光调制,对新型的调制器提出自己的设计和实验尝试,基于平面波展开法和三维时域有限差分法,主要在以下四个方面做出有创新意义的理论工作：
1.提出新型基于水平狭缝平板二维光子晶体结构的调制器。器件通过控制狭缝中聚合物电光效应实现调制功能。水平狭缝平板结构用来在与光传播垂直方向限制导模,这不同于普通光子晶体结构在垂直截面利用折射率差的导光模式。光子晶体线缺陷波导利用其慢波效应,并在水平方向限制导模。
2.提出新型的基于水平狭缝周期性介质波导谐振腔的电光调制器。谐振光模式在垂直方向通过水平狭缝结构限制,在水平方向通过光子禁带进行限制。器件通过填在狭缝中的电光聚合物实现快速高效调制功能。我们提出的谐振腔结构工作在准TM模式。分析表明采用此新结构的调制器具有极低的调制电压、超短的长度和100GHz的带宽。
3.提出新型的基于垂直狭缝周期性介质波导谐振腔的电光调制器。我们首次提出了该纳米谐振腔结构,并对其光学特性进行较详细的分析。狭缝贯穿谐振腔和布拉格反射壁区域,研究表明其有较高的品质因数和极小的模式体积。调制器工作在准TE模式,有小的调制电压、器件尺寸和大的调制带宽。
4.通过结合周期性介质波导、二维平板光子晶体结构和垂直、水平狭缝结构的思路,系统分析了前面提出的几种新型波导和谐振腔结构特点,为今后研究方向提出新的思路。相对于不带狭缝的周期性介质波导谐振腔,水平狭缝的加入对原来谐振腔的影响较垂直狭缝小,品质因数因此也比加入垂直狭缝的谐振腔更大。水平狭缝周期性介质波导谐振腔较大的高宽比使其对制作工艺的要求更高,而垂直狭缝周期性介质波导谐振腔的波导尺寸和制作工艺与普通脊波导类似,利用现有工艺就可以制作。
作者的研究工作主要集中在器件设计方面,在后续工作中希望能将所构思的新型调制器进行充分的实验验证,并期待为将来的光电集成系统的发展做出贡献。
Silicon has long been the optimal material for microelectronics. Building photonic devices in silicon bears the advantage of being compatible to complementary metal-oxide-semiconductor fabrication technology, which can lead to monolithic integration of microelectronic and photonic devices on a single chip. Electrically driven optical modulation in silicon photonics typically relies on the free-carrier plasma dispersion effect of silicon materials. The achievable modulation speed, bandwidth and switching voltage are limited. By contrast, electrical-optical (EO) polymers offer very high Pockels coefficient with extremely fast response speed, and large bandwidth and low modulation voltage can be expected. Conventional polymer waveguides generally have large cross-section, and result in weak light confinement. The slottd guide mode has the highest intensity in the low-index polymer material, and this character is desirable for modulation purpose.
However, the size of modulators is limited by conventional waveguide structures with millimeter interaction length. With the progress of nanofabrication technologies, there has been a great interest in the controlling the propagation of light in photonic crystals periodically structured at a scale comparable to, or slightly smaller than the wavelength. Photonic crystal waveguide can constrain the light due to the forbidden band. Utilizing the line defect or dot defect in the photonic crystals, we can control the propagation of light in certain directions and localizing light in the cavity.
Combining the photonic crystals, slot waveguide, and EO modulation, we propose the new designs of optical modulators. This thesis makes innovative theoretical works mainly in the following four aspects:
1. We proposed a new silicon modulator based on the horizontal photonic crystal slotted slab, in which the horizontal slotted slab is used to confine the beam vertically while the photonic crystal line-defect waveguide is employed to constrain the beam horizontally and slow down the group velocity of the light. The modulation is realized by controlling the EO effect of the polymer filled in the slot.
2. We propose a new compact silicon modulator based on a slotted photonic crystal nanobeam cavity, and its optical characters are analyzed. The slot lies in both the cavity and the distributed Bragg reflectors region. This results in an ultrasmall modal volume and large quality factor. The modulator is operated in the transverse electrical (TE) like mode. The modulation is realized by controlling the EO effect of the polymer filled in the slot and holes.
3. We came up with a new silicon modulator utilizing horizontal slotted photonic crystal nanoridge cavities. The resonance mode is strongly constrained horizontally by the photonic mirrors and vertically by the horizontal slot. The modulator is operated in the transverse magnetic (TM) like mode. If the EO polymer filled in the slot is employed to achieve fast modulation, analysis shows that a modulator with a bandwidth of 100GHz, a low switch voltage and a tiny length can be obtained.
4. Considering the one dimensional or two dimensional photonic crystal and horizontal or vertical slot structures, we synthetically analyze the characters of formal-proposed structures. Compared with the horizontal slotted cavity, the vertical slotted cavity shows a larger quality factor. This mostly due to that the presence of vertical slot worsens more heavily the origin performance of resonant cavities. However, the large aspect ratio of horizontal slotted waveguide makes it a challenge in fabrication process.
The work of this thesis mostly focuses in the device proposal, design and simulation. Partial demonstration of these devices is still underway. The proposed modulator is very promising for applications in future optoelectronic systems.
传统光调制器受限于普通波导结构,很难实现亚波长级的集成。随着硅基纳米结构制造工艺的不断进步,波长量级或亚波长量级周期性结构,即光子晶体,在控制光传输方面越来越引起广泛的关注。光子晶体波导通过光子带隙对光的传输限制,通过在光子晶体中引入线缺陷或点缺陷,可以实现光的传播或局域化。
本论文结合硅基光子晶体结构,狭缝结构和电光调制,对新型的调制器提出自己的设计和实验尝试,基于平面波展开法和三维时域有限差分法,主要在以下四个方面做出有创新意义的理论工作：
1.提出新型基于水平狭缝平板二维光子晶体结构的调制器。器件通过控制狭缝中聚合物电光效应实现调制功能。水平狭缝平板结构用来在与光传播垂直方向限制导模,这不同于普通光子晶体结构在垂直截面利用折射率差的导光模式。光子晶体线缺陷波导利用其慢波效应,并在水平方向限制导模。
2.提出新型的基于水平狭缝周期性介质波导谐振腔的电光调制器。谐振光模式在垂直方向通过水平狭缝结构限制,在水平方向通过光子禁带进行限制。器件通过填在狭缝中的电光聚合物实现快速高效调制功能。我们提出的谐振腔结构工作在准TM模式。分析表明采用此新结构的调制器具有极低的调制电压、超短的长度和100GHz的带宽。
3.提出新型的基于垂直狭缝周期性介质波导谐振腔的电光调制器。我们首次提出了该纳米谐振腔结构,并对其光学特性进行较详细的分析。狭缝贯穿谐振腔和布拉格反射壁区域,研究表明其有较高的品质因数和极小的模式体积。调制器工作在准TE模式,有小的调制电压、器件尺寸和大的调制带宽。
4.通过结合周期性介质波导、二维平板光子晶体结构和垂直、水平狭缝结构的思路,系统分析了前面提出的几种新型波导和谐振腔结构特点,为今后研究方向提出新的思路。相对于不带狭缝的周期性介质波导谐振腔,水平狭缝的加入对原来谐振腔的影响较垂直狭缝小,品质因数因此也比加入垂直狭缝的谐振腔更大。水平狭缝周期性介质波导谐振腔较大的高宽比使其对制作工艺的要求更高,而垂直狭缝周期性介质波导谐振腔的波导尺寸和制作工艺与普通脊波导类似,利用现有工艺就可以制作。
作者的研究工作主要集中在器件设计方面,在后续工作中希望能将所构思的新型调制器进行充分的实验验证,并期待为将来的光电集成系统的发展做出贡献。
Silicon has long been the optimal material for microelectronics. Building photonic devices in silicon bears the advantage of being compatible to complementary metal-oxide-semiconductor fabrication technology, which can lead to monolithic integration of microelectronic and photonic devices on a single chip. Electrically driven optical modulation in silicon photonics typically relies on the free-carrier plasma dispersion effect of silicon materials. The achievable modulation speed, bandwidth and switching voltage are limited. By contrast, electrical-optical (EO) polymers offer very high Pockels coefficient with extremely fast response speed, and large bandwidth and low modulation voltage can be expected. Conventional polymer waveguides generally have large cross-section, and result in weak light confinement. The slottd guide mode has the highest intensity in the low-index polymer material, and this character is desirable for modulation purpose.
However, the size of modulators is limited by conventional waveguide structures with millimeter interaction length. With the progress of nanofabrication technologies, there has been a great interest in the controlling the propagation of light in photonic crystals periodically structured at a scale comparable to, or slightly smaller than the wavelength. Photonic crystal waveguide can constrain the light due to the forbidden band. Utilizing the line defect or dot defect in the photonic crystals, we can control the propagation of light in certain directions and localizing light in the cavity.
Combining the photonic crystals, slot waveguide, and EO modulation, we propose the new designs of optical modulators. This thesis makes innovative theoretical works mainly in the following four aspects:
1. We proposed a new silicon modulator based on the horizontal photonic crystal slotted slab, in which the horizontal slotted slab is used to confine the beam vertically while the photonic crystal line-defect waveguide is employed to constrain the beam horizontally and slow down the group velocity of the light. The modulation is realized by controlling the EO effect of the polymer filled in the slot.
2. We propose a new compact silicon modulator based on a slotted photonic crystal nanobeam cavity, and its optical characters are analyzed. The slot lies in both the cavity and the distributed Bragg reflectors region. This results in an ultrasmall modal volume and large quality factor. The modulator is operated in the transverse electrical (TE) like mode. The modulation is realized by controlling the EO effect of the polymer filled in the slot and holes.
3. We came up with a new silicon modulator utilizing horizontal slotted photonic crystal nanoridge cavities. The resonance mode is strongly constrained horizontally by the photonic mirrors and vertically by the horizontal slot. The modulator is operated in the transverse magnetic (TM) like mode. If the EO polymer filled in the slot is employed to achieve fast modulation, analysis shows that a modulator with a bandwidth of 100GHz, a low switch voltage and a tiny length can be obtained.
4. Considering the one dimensional or two dimensional photonic crystal and horizontal or vertical slot structures, we synthetically analyze the characters of formal-proposed structures. Compared with the horizontal slotted cavity, the vertical slotted cavity shows a larger quality factor. This mostly due to that the presence of vertical slot worsens more heavily the origin performance of resonant cavities. However, the large aspect ratio of horizontal slotted waveguide makes it a challenge in fabrication process.
The work of this thesis mostly focuses in the device proposal, design and simulation. Partial demonstration of these devices is still underway. The proposed modulator is very promising for applications in future optoelectronic systems.
引文
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