介质深层带电数值模拟与应用研究
摘要
高能粒子与航天器介质材料相互作用引起的空间介质深层带电效应对航天器的长寿命、高可靠运行构成了严重的威胁,一直是航天器充放电效应及其防护技术研究的热点问题。目前,将蒙特卡罗粒子输运模拟引入到航天器空间环境效应分析和评价中,并与具体空间环境效应模型相结合,已经成为一种解决粒子辐照引起空间环境效应数值模拟的普遍方法。
本论文首先对当前空间介质深层带电研究的现状和发展趋势进行了总结,提出了GEANT4-RIC方法,即采用GEANT4粒子输运模拟工具包实现介质深层充电辐射过程数值模拟,利用辐射诱导电导率(RIC)模型实现介质内部电场计算。研究了利用GEANT4工具包进行介质深层带电辐射模拟的物理过程建模和物理量统计方法,推导出了介质结构的辐射诱导电导率充电动力学方程,解决了不同介质结构的内电场数值计算问题,同时通过对文献中所报道的算例进行计算,对比了电荷密度、表面电位和内部电场分布模拟结果,验证了GEANT4-RIC模型及其计算方法的正确性。
利用建立的模拟方法,研究了介质材料密度、厚度、电导率等参数对介质深层带电的影响,获得了在FLUMIC2最恶劣电子环境下,FR4和TEFLON在背面接地时介质深层带电的规律。结果表明：介质密度对内充电过程中的电荷密度分布影响明显,随着密度的增加,介质内电荷密度增大；介质厚度对电荷密度分布和电场分布的影响非常显著,当介质厚度小于射程时,最大电场会随着介质厚度的增加而不断增大；电导率对内电场的影响较大,当电导率低于1×10-14Ω-1m-1时,介质材料会产生严重的充电问题。
针对我国卫星采用盘环结构件及其工作状态,建立了介质内充电的三维RIC数学模型,开展了未辐照、理想介质辐照和RIC模型介质辐照三种情况下的数值计算,初步验证了GEANT4-RIC作为一种通用方法在处理二维和三维的复杂介质结构深层带电评价问题上的可行性。
首次将GEANT4-RIC方法用于卫星介质深层带电监测器(IDM)的研制工作中,对IDM所采用的FR4覆铜板在背面接地条件下的充电过程进行了数值模拟,表明在1MeV,10pA/cm2的高能电子辐照下,样品的平均放电时间为4.6分钟,与地面试验结果接近。
最后,采用GEANT4-RIC方法首次研究了质子引起的空间介质深层带电问题,验证了GEANT4-RIC方法用于质子引起空间介质深层带电问题预测和评估的可行性,为进一步开展质子引起的介质深层带电问题研究提供了一条途径。
Deep Dielectrics Charging effect due to interactions between high energy electrons and spacecraft dielectric materials seriously threatens the objects of long life and high reliability for on-orbit spacecraft missions, and also is a hot research direction in Spacecraft Charging Effect and Protection Technology field in recent years. Currently, it becomes a common numerical simulation method to solve analysis and evaluation of spacecraft environmental effects by introducing Monte Carlo particle transfer simulation into concrete space environmental effect models.
The paper firstly reviews state of art and developing trends for current space deep dielectrics charging effect research and puts forward an new GEANT4-RIC numerical method in that GEANT4 particle transfer simulation package is used to realize radiation simulation in deep dielectrics charging process and Radiation-Induced Conductivity model is used to calculate internal electric field of dielectrics. It is studied that the physical processes and statistical method of detecting parameters involving in the internal charging with GEANT4 simulation. Moreover, RIC equations of dielectric structures are derived for deep dielectrics charging simulation. Through calculating examples of publish literature, the effectiveness of this evolution method is verified by contrast in charge density and surface voltage and profile of internal field.
On the basis of GEANT4-RIC method, influence of density and thickness and conductivity of dielectric for deep dielectrics charging effect is investigated. The FR4 and TEFLON law deep dielectrics charging is obtained in space electron environment model of FLUMIC2, result indicate that (1) density of dielectric have affected profile of charge density in deep dielectrics charging, charge density will increase with density of dielectric; (2) thickness of dielectric have affected profile of internal field, internal field will increase with thickness of dielectric when thickness less than electron distance; (3) conductivity of dielectric have obviously affected internal field, dielectric will bring serious charging problem when conductivity less than 1e-14Ω-1m-1.
The paper firstly use the method of GEANT4-RIC in manufacture of Internal Discharging Monitor(IDM). Charging process of FR4 print circuit board using in IDM is simulate under rear grounding, result indicate average discharging time of sample under 1MeV,10pA/cm2 energetic electron radation is 4.6 munites. It is very close to testing result of average discharging time.
According to the structure features of discal ring and operation, RIC maths model of 3-D is established and calculate the three charging state without radiation and ideal dielectric RIC model diectric under radiation, primarily validate ability that GEANT4-RIC deal with deep dielectrics charging of 2-D and 3-D complex structure as a universal method.
Finally, the GEANT4-RIC method is also introduced to research proton induced internal charging problem. The simulations prove its feasibility on predicting and evaluating dielectric intenal charging effect and also provide an alternative way for proton induced internal charging research.
本论文首先对当前空间介质深层带电研究的现状和发展趋势进行了总结,提出了GEANT4-RIC方法,即采用GEANT4粒子输运模拟工具包实现介质深层充电辐射过程数值模拟,利用辐射诱导电导率(RIC)模型实现介质内部电场计算。研究了利用GEANT4工具包进行介质深层带电辐射模拟的物理过程建模和物理量统计方法,推导出了介质结构的辐射诱导电导率充电动力学方程,解决了不同介质结构的内电场数值计算问题,同时通过对文献中所报道的算例进行计算,对比了电荷密度、表面电位和内部电场分布模拟结果,验证了GEANT4-RIC模型及其计算方法的正确性。
利用建立的模拟方法,研究了介质材料密度、厚度、电导率等参数对介质深层带电的影响,获得了在FLUMIC2最恶劣电子环境下,FR4和TEFLON在背面接地时介质深层带电的规律。结果表明：介质密度对内充电过程中的电荷密度分布影响明显,随着密度的增加,介质内电荷密度增大；介质厚度对电荷密度分布和电场分布的影响非常显著,当介质厚度小于射程时,最大电场会随着介质厚度的增加而不断增大；电导率对内电场的影响较大,当电导率低于1×10-14Ω-1m-1时,介质材料会产生严重的充电问题。
针对我国卫星采用盘环结构件及其工作状态,建立了介质内充电的三维RIC数学模型,开展了未辐照、理想介质辐照和RIC模型介质辐照三种情况下的数值计算,初步验证了GEANT4-RIC作为一种通用方法在处理二维和三维的复杂介质结构深层带电评价问题上的可行性。
首次将GEANT4-RIC方法用于卫星介质深层带电监测器(IDM)的研制工作中,对IDM所采用的FR4覆铜板在背面接地条件下的充电过程进行了数值模拟,表明在1MeV,10pA/cm2的高能电子辐照下,样品的平均放电时间为4.6分钟,与地面试验结果接近。
最后,采用GEANT4-RIC方法首次研究了质子引起的空间介质深层带电问题,验证了GEANT4-RIC方法用于质子引起空间介质深层带电问题预测和评估的可行性,为进一步开展质子引起的介质深层带电问题研究提供了一条途径。
Deep Dielectrics Charging effect due to interactions between high energy electrons and spacecraft dielectric materials seriously threatens the objects of long life and high reliability for on-orbit spacecraft missions, and also is a hot research direction in Spacecraft Charging Effect and Protection Technology field in recent years. Currently, it becomes a common numerical simulation method to solve analysis and evaluation of spacecraft environmental effects by introducing Monte Carlo particle transfer simulation into concrete space environmental effect models.
The paper firstly reviews state of art and developing trends for current space deep dielectrics charging effect research and puts forward an new GEANT4-RIC numerical method in that GEANT4 particle transfer simulation package is used to realize radiation simulation in deep dielectrics charging process and Radiation-Induced Conductivity model is used to calculate internal electric field of dielectrics. It is studied that the physical processes and statistical method of detecting parameters involving in the internal charging with GEANT4 simulation. Moreover, RIC equations of dielectric structures are derived for deep dielectrics charging simulation. Through calculating examples of publish literature, the effectiveness of this evolution method is verified by contrast in charge density and surface voltage and profile of internal field.
On the basis of GEANT4-RIC method, influence of density and thickness and conductivity of dielectric for deep dielectrics charging effect is investigated. The FR4 and TEFLON law deep dielectrics charging is obtained in space electron environment model of FLUMIC2, result indicate that (1) density of dielectric have affected profile of charge density in deep dielectrics charging, charge density will increase with density of dielectric; (2) thickness of dielectric have affected profile of internal field, internal field will increase with thickness of dielectric when thickness less than electron distance; (3) conductivity of dielectric have obviously affected internal field, dielectric will bring serious charging problem when conductivity less than 1e-14Ω-1m-1.
The paper firstly use the method of GEANT4-RIC in manufacture of Internal Discharging Monitor(IDM). Charging process of FR4 print circuit board using in IDM is simulate under rear grounding, result indicate average discharging time of sample under 1MeV,10pA/cm2 energetic electron radation is 4.6 munites. It is very close to testing result of average discharging time.
According to the structure features of discal ring and operation, RIC maths model of 3-D is established and calculate the three charging state without radiation and ideal dielectric RIC model diectric under radiation, primarily validate ability that GEANT4-RIC deal with deep dielectrics charging of 2-D and 3-D complex structure as a universal method.
Finally, the GEANT4-RIC method is also introduced to research proton induced internal charging problem. The simulations prove its feasibility on predicting and evaluating dielectric intenal charging effect and also provide an alternative way for proton induced internal charging research.
引文
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