高能光子在半导体中输运的蒙特卡罗模拟研究
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摘要
在人为和空间辐射环境中,高能粒子和光子引起的辐射损伤是电子系统性能退化甚至失效的主要原因之一。半导体材料的辐射损伤研究是电子系统辐射损伤及其加固研究的基础。现今随着抗辐射器件在商用和民用价值的扩大,抗辐射问题将成为我们新的挑战,而研究高能光子如何在半导体中输运,是抗辐射的重要内容。本文的研究内容属于半导体器件抗辐射问题的基础,这正是本文开展此项研究的意义所在。
本文采用了蒙特卡罗模拟方法,开展了高能光子对半导体材料GaAs等的损伤模拟研究,并应用计算机MATLAB软件给出了模拟结果。
本文系统地分析了高能光子与物质的相互作用机制,给出了光电效应、康普顿散射和正负电子对生成此三种效应的物理规律及蒙特卡罗模拟方法。
本文利用高能光子反应截面数据库,系统地研究了GaAs的高能光子响应特性,给出了不同能量情况下,GaAs材料中发生光电效应、康普顿散射和正负电子对生成此三种效应的概率分析,以及单位长度的GaAs材料中高能光子与之发生反应的次数情况。另外,编写了模拟程序并计算了2MeV的光子在GaAs中的能量沉积及其分布,并对计算结果进行了分析。
The radiation damage induced-by energetic particles and photons is one of the main reasons of degradation or even failure of electronic systems in man-made and space radiation environment. The research of radiation damage in semiconductor materials is the basis of that in electronic systems and their hardening. Nowadays, with the expansion of radiation tolerance in commercial use, the problem of radiation tolerance will become our new challenge. And, studying how the energetic photons transfer in semiconductor is the important part of radiation damage research. We will make the solid basis for studying the problem of radiation tolerance, that is the significance of studying in this paper.
In this paper, the content of reach on high-energy photon transport in several semiconductors by Monte Carlo Simulation. By use of a forced collision, the calculating efficiency and precision have been improved evidently. Energy deposition of gamma rays is calculated using Monte Carlo Simulation.
The Details of the interaction between high-energy photons and material was analysed. The main photons interaction with the material, that is, the photo-electric effect, Compton scattering (effect) and the pair production effects, by studying the response mechanism, to draw the various reaction cross-sections and the particle energy and angular distribution.
The GaAs high-energy photons response characteristic is studied by using the database of high-energy photons reaction cross-sections. The photoelectric effect, Compton scattering and the pair production in GaAs materials in different energy situations is probability analysised, as well as the number of reactions between the high-energy photons of units of length GaAs materials and semiconductors. In addition, The deposition of 2MeV photon energy and its distribution are calculated by the program written, and the calculated results are analyzed.
本文采用了蒙特卡罗模拟方法,开展了高能光子对半导体材料GaAs等的损伤模拟研究,并应用计算机MATLAB软件给出了模拟结果。
本文系统地分析了高能光子与物质的相互作用机制,给出了光电效应、康普顿散射和正负电子对生成此三种效应的物理规律及蒙特卡罗模拟方法。
本文利用高能光子反应截面数据库,系统地研究了GaAs的高能光子响应特性,给出了不同能量情况下,GaAs材料中发生光电效应、康普顿散射和正负电子对生成此三种效应的概率分析,以及单位长度的GaAs材料中高能光子与之发生反应的次数情况。另外,编写了模拟程序并计算了2MeV的光子在GaAs中的能量沉积及其分布,并对计算结果进行了分析。
The radiation damage induced-by energetic particles and photons is one of the main reasons of degradation or even failure of electronic systems in man-made and space radiation environment. The research of radiation damage in semiconductor materials is the basis of that in electronic systems and their hardening. Nowadays, with the expansion of radiation tolerance in commercial use, the problem of radiation tolerance will become our new challenge. And, studying how the energetic photons transfer in semiconductor is the important part of radiation damage research. We will make the solid basis for studying the problem of radiation tolerance, that is the significance of studying in this paper.
In this paper, the content of reach on high-energy photon transport in several semiconductors by Monte Carlo Simulation. By use of a forced collision, the calculating efficiency and precision have been improved evidently. Energy deposition of gamma rays is calculated using Monte Carlo Simulation.
The Details of the interaction between high-energy photons and material was analysed. The main photons interaction with the material, that is, the photo-electric effect, Compton scattering (effect) and the pair production effects, by studying the response mechanism, to draw the various reaction cross-sections and the particle energy and angular distribution.
The GaAs high-energy photons response characteristic is studied by using the database of high-energy photons reaction cross-sections. The photoelectric effect, Compton scattering and the pair production in GaAs materials in different energy situations is probability analysised, as well as the number of reactions between the high-energy photons of units of length GaAs materials and semiconductors. In addition, The deposition of 2MeV photon energy and its distribution are calculated by the program written, and the calculated results are analyzed.
引文
[1]曹建中.半导体材料的辐射效应[M],科学出版社,1993.5
[2]赖祖武.抗辐射电子学一辐射效应及加固原理[M],国防工业出版社,1998.7
[3](美)施敏.现代半导体器件物理[M],科学出版社,2001.6
[4]叶良修.半导体物理学(上册)[M],高等教育出版社,1984.5
[5]陈世彬,张义门,陈雨生.不同粒子在硅中能量沉积及比较[J],核电子学与探测技术,2001.05,21(3)：180
[6]Emi Miyata. High resolution X-ray photon-counting detector with scintillator-deposited charge-coupled device[J]. IEEE Trans actions on nuclear science 2000.53(2):577
[7]J.M.Killiany. Effects of Ionizing Radiation on Charge-Coupled Device Structures[J], IEEE Trans. on Nucl.1974.Sci.,Vol.21,193
[8]R.A.Berger and J.L.Azarewicz, Packaging Effects on Transister Radiation Response[J], IEEE Trans. onNucl. Sci.1975.Vol.22,2568
[9]J.L.Crowley,et. Technique for Selection of Transient Radiation Hard Junction Isolated Integrated Circuits[J], IEEE Trans. on Nucl. Sci.1976.Vol 23:1703
[10]L. W. Rickets. Fundamentals of Nuclear Hardening of Electronic Equipment, New York:Wiley-Interscience[C],1972
[11]Norman J. Rudie. Principles of Radiation Hardening[J],1980.Vol.1,23
[12]Wood. S. Simulation of radiation damage in solids[J]. IEEE Trans on Nucl Sci, 1981.28(6):4107-4112
[13]包宗明,王儒全.半导体器件的辐射加固(译文集)[M],原子能出版社,1985(1),144
[14]J.L.Wirth and S.C.Rogers, Transient Response of Transistors and Diodes to Ionizing diation[J], IEEE Trans on Nucl. Sci,1964.11,24
[15]陈世彬,陈雨生,黄流兴,张义门.60Coγ和高能电子在硅中NIEL的Monte Carlo计算[J],光子学报,29(5)：415,2000.05
[16]陈世彬,张义门,陈雨生.1MeV中子在Si和SiO2中NIEL和IEL的MC计算[J],辐射防护,2001.01,21(1)：48
[17]许淑艳.蒙特卡罗方法在实验核物理中的应用[M],原子能出版社,2006.8
[18]杜书华.输运问题的计算机模拟[M],湖南科学技术出版社,1989
[19]张义门等.半导体器件计算机模拟[M],电子工业出版社,1991
[20]吉利久.计算微电子学[M],科学出版社,1990
[21]赵丽华.不同中子源辐照在硅中缺陷的研究[J],抗核加固,第15卷
[22]J.C.Slater. The Effects of Radiation on Material [J], J.Appl.Phys.1951.22(1):237
[23]J.W.Cleland. The Effect of Fast Neutron Bombardment on the Electrical Properties of Germanium [J], Phys. Rev.1951.83,312
[24]K. McKay and K. McAfee. Energy Loss per Electron-Hole Pair by Alphas in Ge and Si[J], Phys.Rev.,1953.91,1079
[25]J.F.Fowler, X-Ray Induced Conductivity in Insulator Materials[J],Proc. Roy.Soc, 1956.A236,464
[26]V.A.J.Van Lint and P.H.Miller Jr. Electrical Effects of High-Intensity Ionizing Radiation on Nonmetals[J],Proc. of Conference on Peaceful Uses of Atomic Energy,1958,29,336
[27]J.L.Wirth and S.C.Rogers, Transient Response of Transistors and Diodes to Ionizing diation[J], IEEE Trans on Nucl. Sci,1964,11,24
[28]O.L.Curtis. Hole and Electron Transport in SiO2 Films[J],J, Appl.Phys,1974,45,4506
[29]O.L.Curtis. The Multiple-Trapping Model and Hole Transport in SiO2[J], J.Appl.Phys, 1977.48,3819
[30]GA.Ausman and F.B.Mclean. Electron-Hole Pair Creating Energy in SiO2[J], Appl.Phys,Lett. 1975.26,173
[31]J.R.Srour. Charge Transport Studies in SiO2:Processing Effects and Implications for Radiation Hardening[J], IEEE Trans. on Nucl. Sci,1974.21,73
[32]H.H.Sander and B.L.Gregory. Unified Model of Damage Annealing in CMOS.from Freeze-into Transient Annealing[J], IEEE Trans. on Nucl, Sci.Vol.1975.22,2157
[33]G..P.Fister and H.Scher, Dispersive(Non-Gaussian) Transient Transport in Disordered Solids[J], Adv.Phys.Vol.1978.27,747
[34]D.Binder,E.C.Smith and A.B.Holman, Satellites Anormalies from Galactic Cosmic Rays [J], IEEE Trans. on Nucl. Sci,Vol.1975.22,2675
[38]G. Gocrtzel,M.H.Kalos, Monte Carlo Methods in Transport Problems, Progress in Nuclear Energy, Scrics 1,Physics& Mathemalics,1958.Vol.2 315
[39]裴鹿成,张孝泽.蒙特卡罗方法及其在粒子输运问题中的应用[M],北京科学出版社,1980
[40]杜书华.输运问题的计算机模拟[M],湖南科学技术出版社,1988
[41](美)L.E.雷克.统计物理现代教程(上册)[M],北京大学出版社,1983
[43]丁富荣.辐射物理[M],北京大学出版社,2004,10
[44]张森等.MATLAB仿真技术与实例应用教程[M],北京机械工业出版社.2004,1(1)：55-72
[45]陈怀琛.MATLAB及在电子信息课程中的应用[M],电子工业出版社,2002,9(1)：13-30
[46]张志涌,MATLAB教程基于6X版本[M],航空航天大学出版社,2001
[47]张葛祥,李娜.MATLAB仿真技术与应用[M],清华大学出版社,2003
[48]黄忠霖.控制系统MATLAB计算与仿真[M].国防工业出版社.2004,9(1)：88-102
[49]王福保.概率论及数理统计[M],同济大学出版社,1984
[50]陈辰嘉.原子与原子核物理学手册[M],北京出版社,1993,6
[51]刘正君.MATLAB科学计算与可视化仿真宝典[M],电子工业出版社,2009,4
[2]赖祖武.抗辐射电子学一辐射效应及加固原理[M],国防工业出版社,1998.7
[3](美)施敏.现代半导体器件物理[M],科学出版社,2001.6
[4]叶良修.半导体物理学(上册)[M],高等教育出版社,1984.5
[5]陈世彬,张义门,陈雨生.不同粒子在硅中能量沉积及比较[J],核电子学与探测技术,2001.05,21(3)：180
[6]Emi Miyata. High resolution X-ray photon-counting detector with scintillator-deposited charge-coupled device[J]. IEEE Trans actions on nuclear science 2000.53(2):577
[7]J.M.Killiany. Effects of Ionizing Radiation on Charge-Coupled Device Structures[J], IEEE Trans. on Nucl.1974.Sci.,Vol.21,193
[8]R.A.Berger and J.L.Azarewicz, Packaging Effects on Transister Radiation Response[J], IEEE Trans. onNucl. Sci.1975.Vol.22,2568
[9]J.L.Crowley,et. Technique for Selection of Transient Radiation Hard Junction Isolated Integrated Circuits[J], IEEE Trans. on Nucl. Sci.1976.Vol 23:1703
[10]L. W. Rickets. Fundamentals of Nuclear Hardening of Electronic Equipment, New York:Wiley-Interscience[C],1972
[11]Norman J. Rudie. Principles of Radiation Hardening[J],1980.Vol.1,23
[12]Wood. S. Simulation of radiation damage in solids[J]. IEEE Trans on Nucl Sci, 1981.28(6):4107-4112
[13]包宗明,王儒全.半导体器件的辐射加固(译文集)[M],原子能出版社,1985(1),144
[14]J.L.Wirth and S.C.Rogers, Transient Response of Transistors and Diodes to Ionizing diation[J], IEEE Trans on Nucl. Sci,1964.11,24
[15]陈世彬,陈雨生,黄流兴,张义门.60Coγ和高能电子在硅中NIEL的Monte Carlo计算[J],光子学报,29(5)：415,2000.05
[16]陈世彬,张义门,陈雨生.1MeV中子在Si和SiO2中NIEL和IEL的MC计算[J],辐射防护,2001.01,21(1)：48
[17]许淑艳.蒙特卡罗方法在实验核物理中的应用[M],原子能出版社,2006.8
[18]杜书华.输运问题的计算机模拟[M],湖南科学技术出版社,1989
[19]张义门等.半导体器件计算机模拟[M],电子工业出版社,1991
[20]吉利久.计算微电子学[M],科学出版社,1990
[21]赵丽华.不同中子源辐照在硅中缺陷的研究[J],抗核加固,第15卷
[22]J.C.Slater. The Effects of Radiation on Material [J], J.Appl.Phys.1951.22(1):237
[23]J.W.Cleland. The Effect of Fast Neutron Bombardment on the Electrical Properties of Germanium [J], Phys. Rev.1951.83,312
[24]K. McKay and K. McAfee. Energy Loss per Electron-Hole Pair by Alphas in Ge and Si[J], Phys.Rev.,1953.91,1079
[25]J.F.Fowler, X-Ray Induced Conductivity in Insulator Materials[J],Proc. Roy.Soc, 1956.A236,464
[26]V.A.J.Van Lint and P.H.Miller Jr. Electrical Effects of High-Intensity Ionizing Radiation on Nonmetals[J],Proc. of Conference on Peaceful Uses of Atomic Energy,1958,29,336
[27]J.L.Wirth and S.C.Rogers, Transient Response of Transistors and Diodes to Ionizing diation[J], IEEE Trans on Nucl. Sci,1964,11,24
[28]O.L.Curtis. Hole and Electron Transport in SiO2 Films[J],J, Appl.Phys,1974,45,4506
[29]O.L.Curtis. The Multiple-Trapping Model and Hole Transport in SiO2[J], J.Appl.Phys, 1977.48,3819
[30]GA.Ausman and F.B.Mclean. Electron-Hole Pair Creating Energy in SiO2[J], Appl.Phys,Lett. 1975.26,173
[31]J.R.Srour. Charge Transport Studies in SiO2:Processing Effects and Implications for Radiation Hardening[J], IEEE Trans. on Nucl. Sci,1974.21,73
[32]H.H.Sander and B.L.Gregory. Unified Model of Damage Annealing in CMOS.from Freeze-into Transient Annealing[J], IEEE Trans. on Nucl, Sci.Vol.1975.22,2157
[33]G..P.Fister and H.Scher, Dispersive(Non-Gaussian) Transient Transport in Disordered Solids[J], Adv.Phys.Vol.1978.27,747
[34]D.Binder,E.C.Smith and A.B.Holman, Satellites Anormalies from Galactic Cosmic Rays [J], IEEE Trans. on Nucl. Sci,Vol.1975.22,2675
[38]G. Gocrtzel,M.H.Kalos, Monte Carlo Methods in Transport Problems, Progress in Nuclear Energy, Scrics 1,Physics& Mathemalics,1958.Vol.2 315
[39]裴鹿成,张孝泽.蒙特卡罗方法及其在粒子输运问题中的应用[M],北京科学出版社,1980
[40]杜书华.输运问题的计算机模拟[M],湖南科学技术出版社,1988
[41](美)L.E.雷克.统计物理现代教程(上册)[M],北京大学出版社,1983
[43]丁富荣.辐射物理[M],北京大学出版社,2004,10
[44]张森等.MATLAB仿真技术与实例应用教程[M],北京机械工业出版社.2004,1(1)：55-72
[45]陈怀琛.MATLAB及在电子信息课程中的应用[M],电子工业出版社,2002,9(1)：13-30
[46]张志涌,MATLAB教程基于6X版本[M],航空航天大学出版社,2001
[47]张葛祥,李娜.MATLAB仿真技术与应用[M],清华大学出版社,2003
[48]黄忠霖.控制系统MATLAB计算与仿真[M].国防工业出版社.2004,9(1)：88-102
[49]王福保.概率论及数理统计[M],同济大学出版社,1984
[50]陈辰嘉.原子与原子核物理学手册[M],北京出版社,1993,6
[51]刘正君.MATLAB科学计算与可视化仿真宝典[M],电子工业出版社,2009,4
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