MCM多层互连基板及膜电阻可靠性研究
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摘要
MCM多芯片组件以其体积小，重量轻、性能好等优点而倍受关注，并在电子、医疗、航天、汽车和电信等领域得到了广泛应用。同时，MCM的可靠性问题也成为国际上研究的焦点问题之一。
本研究重点研究了MCM—C基板的可靠性，包括厚膜电阻，基板布线以及互连通孔。试验设计制造了5层10层和15层三种低温共烧陶瓷基板样品。基板表面放置了10欧姆10K欧姆和100K欧姆三种厚膜电阻，基板层与层之间通过通孔与金属线(称为导带)连接，试验测试膜电阻及导带电阻值。试验分为两部分，第一部分为极限应力对比试验，第二部分为温度应力与电应力双应力加速试验。极限应力对比试验过程依据GJB548-9方法1010A中温度循环试验条件F要求，样品在-65℃～175℃的条件下做温度循环。加速寿命试验进行了两个温度点的试验，采取的温度点为200℃和230℃，两个不同的电压应力点为16/60V及12/45V(V1/V2)。
本研究采用统计方法先对膜电阻的寿命分布进行分布拟合检验，结果发现可以认为膜电阻的寿命分布服从威布尔分布，然后用最好线性无偏估计算出其分布参数，从而得出平均寿命、特征寿命等参数。利用两个不同的电应力下的寿命得出电应力加速系数，然后算出逆幂率系数。再根据Arrhenius公式，利用两个温度点的数据算出三种不同层数MCM的激活能，从而可以外推出常温下的寿命。
本研究发现，国产低温共烧陶瓷多芯片组件(MCM—C，LTCC基板)中厚膜电阻的寿命分布服从形状参数位m=1.1549的威布尔分布；MCM-C中厚膜电阻电应力的逆幂率系数σ=5.7143；五层、十层和十五层MCM—C的激活能E_Ⅰ、E_Ⅰ及E_Ⅲ为0.192eV、0.165eV和0.114eV；三种层数的MCM—C样品膜电阻寿命数据进行对比Ⅰ_2：Ⅱ_2：Ⅲ_2=432.068：407.088：300.296=1.44：1.36：1。
Thanks to its advantages such as small volume, light weight and good performance, Multi-chip Module (MCM) has drawn especial attention and has extensive applications in electronics, medication, spaceflight, automobile and telecommunication. Synchronously the reliability of MCM becomes one of research focuses internationally.
This paper mainly studies the reliability of substrates of MCM-C including thick-film resistors, metal lines and vias for interconnection. Three types of LTCC (Low-temperature co-fired) substrates with different layers 5, 10 and 15 were designed and made. On top of the substrates locate three kinds of resistors with different resistances 10 ohm, 10K ohm and 100K ohm, and metal lines and vias are used for interconnection between layers. In the whole experiment, resistance of resistors and lines is our testing parameter. The experiment contains two sections, one is comparison experiment under extreme stresses (GEES), and the other is life-accelerated experiment with dual stresses (LAEDS). CEES Follows the method 1010A in GJB548-9, that is, samples are conducted temperature cycling experiment on temperature condition from -65 C to 175 C. While LAEDS conducts experiment under two temperatures 200 C and 230 C, each temperatures with two voltage stresses 16/60V and 12/45 V.
With statistical theory this paper first carries out test of goodness of fix on life distribution, with the results that we can accept the hypothesis that the life of thick-film resistors obeys Weibull distribution. Then Best Linear Unbiased Estimation (BLUE) is used to figure out the distributional parameters, thereafter some life parameters such as average life and characteristic life can be available. From the experimental data under two different voltage stresses electric acceleration coefficient is calculated then anti-power law coefficient is figured out. From the experimental data under two different temperatures activation energy is calculated following Arrhenius law, after which life of room temperature can be extrapolated.
At last, this study shows the results as follows. Life of thick-film resistors in LTCC substrates made in China obey Weibull distribution with shape parameter m=1.1549; The coefficient of anti-power law of electric stress is a =5.7143; Activation energy EI_ EH and Em of film resistors in 5-layer, 10 layer and 15-layer substrates are 0.192eV, 0.165eV and 0.114eV respectively; The resistor life in the three kinds of substrates has a ratio I2: II3: III2=:432.068: 407.088: 300.296=1.44: 1.36: 1.
本研究重点研究了MCM—C基板的可靠性，包括厚膜电阻，基板布线以及互连通孔。试验设计制造了5层10层和15层三种低温共烧陶瓷基板样品。基板表面放置了10欧姆10K欧姆和100K欧姆三种厚膜电阻，基板层与层之间通过通孔与金属线(称为导带)连接，试验测试膜电阻及导带电阻值。试验分为两部分，第一部分为极限应力对比试验，第二部分为温度应力与电应力双应力加速试验。极限应力对比试验过程依据GJB548-9方法1010A中温度循环试验条件F要求，样品在-65℃～175℃的条件下做温度循环。加速寿命试验进行了两个温度点的试验，采取的温度点为200℃和230℃，两个不同的电压应力点为16/60V及12/45V(V1/V2)。
本研究采用统计方法先对膜电阻的寿命分布进行分布拟合检验，结果发现可以认为膜电阻的寿命分布服从威布尔分布，然后用最好线性无偏估计算出其分布参数，从而得出平均寿命、特征寿命等参数。利用两个不同的电应力下的寿命得出电应力加速系数，然后算出逆幂率系数。再根据Arrhenius公式，利用两个温度点的数据算出三种不同层数MCM的激活能，从而可以外推出常温下的寿命。
本研究发现，国产低温共烧陶瓷多芯片组件(MCM—C，LTCC基板)中厚膜电阻的寿命分布服从形状参数位m=1.1549的威布尔分布；MCM-C中厚膜电阻电应力的逆幂率系数σ=5.7143；五层、十层和十五层MCM—C的激活能E_Ⅰ、E_Ⅰ及E_Ⅲ为0.192eV、0.165eV和0.114eV；三种层数的MCM—C样品膜电阻寿命数据进行对比Ⅰ_2：Ⅱ_2：Ⅲ_2=432.068：407.088：300.296=1.44：1.36：1。
Thanks to its advantages such as small volume, light weight and good performance, Multi-chip Module (MCM) has drawn especial attention and has extensive applications in electronics, medication, spaceflight, automobile and telecommunication. Synchronously the reliability of MCM becomes one of research focuses internationally.
This paper mainly studies the reliability of substrates of MCM-C including thick-film resistors, metal lines and vias for interconnection. Three types of LTCC (Low-temperature co-fired) substrates with different layers 5, 10 and 15 were designed and made. On top of the substrates locate three kinds of resistors with different resistances 10 ohm, 10K ohm and 100K ohm, and metal lines and vias are used for interconnection between layers. In the whole experiment, resistance of resistors and lines is our testing parameter. The experiment contains two sections, one is comparison experiment under extreme stresses (GEES), and the other is life-accelerated experiment with dual stresses (LAEDS). CEES Follows the method 1010A in GJB548-9, that is, samples are conducted temperature cycling experiment on temperature condition from -65 C to 175 C. While LAEDS conducts experiment under two temperatures 200 C and 230 C, each temperatures with two voltage stresses 16/60V and 12/45 V.
With statistical theory this paper first carries out test of goodness of fix on life distribution, with the results that we can accept the hypothesis that the life of thick-film resistors obeys Weibull distribution. Then Best Linear Unbiased Estimation (BLUE) is used to figure out the distributional parameters, thereafter some life parameters such as average life and characteristic life can be available. From the experimental data under two different voltage stresses electric acceleration coefficient is calculated then anti-power law coefficient is figured out. From the experimental data under two different temperatures activation energy is calculated following Arrhenius law, after which life of room temperature can be extrapolated.
At last, this study shows the results as follows. Life of thick-film resistors in LTCC substrates made in China obey Weibull distribution with shape parameter m=1.1549; The coefficient of anti-power law of electric stress is a =5.7143; Activation energy EI_ EH and Em of film resistors in 5-layer, 10 layer and 15-layer substrates are 0.192eV, 0.165eV and 0.114eV respectively; The resistor life in the three kinds of substrates has a ratio I2: II3: III2=:432.068: 407.088: 300.296=1.44: 1.36: 1.
引文
1．杨邦朝，张经国．多芯片组件(MCM)技术及其应用．电子科技大学出版社，2001：41
2．苏世民，梁春广．MCM—电子技术革命的挑战和机遇．半导体情报．1994，31(1)：1-4
3. Tucker M C, Meeting Global MCM Manufacturing Challenges, Solid State Technology, 1992,35(6):101
4. radeep Lall Shrikar Bhagath. An Overview of Multichip Modules, Solid State Technology, 1993,36(9):65
5．杨邦朝，张经国．多芯片组件(MCM)技术及其应用．电子科技大学出版社，2001：57
6．王毅．MCM的检测技术．电子王业专用设备．1994，23(1)：54
7. Tsukada Y, et al. Surface Laminar Circuit and Flip Chip Attach Packgeing. IMC 1992 Proceedings, 252
8. A prabhu, WJ Schaefer et al. High Reliability LTCC BGA for Telecom Application. IEEE/CPMT int'l Electronics Maufacturing Technology Symoposium 2000:311-323
9．田民波，梁彤翔等．多层基板中的多层陶瓷共烧技术．宇航材料工艺．1995，2：40-43
10. Rao R Tummala. Ceramic and glass-ceramic packaging in the 1990s. J.Am. Ceram.Soc.,1991,74(5):895-908
11. Patrick Thompson. Reliability Development and Qualification of a Low-Cost, PQFP-Based MCM. Electron9ic Components and Technology Conference ,IEEE 1994:186-190
12. Jimmy Yang. The Reliability Preformance Evaluation of High-Density Thin-Film Multichip Substrates. Multi-Chip Module Conference, 1992 Proceedings, 1992 IEEE: 94-97
13. Nien-Tsu Shen. Reliability by Design for MCM Manufacturing The
Roadmap and An Example. Multi-chip Module Conference, IEEE 1993:100-105
14. Zsolt Illyefalvi-vitez. Failure and Acceleration Models for MCM-Ls Tested by HAST. IEEE Electronic Components and Technology Conference, 2002:480-483
15. A.W. Lin, A.M. Lyons. Reliability and Thermal Characterization of A 3-Dimensional Multichip Module. IEEE, Electronic Components and Technology Conference, 1993 Proceedings, 43rd. IEEE 1993:71-79
16．杨克武．多芯片系统可靠性技术．半导体情报．1999，36(6)：1-5
17. X.Q. He, X. Ma, Y. Zhang. Elimination of Opens Failure Between Via Holes and Traces in LTCC Multilayer Substrate by coherent Shrinkage. IEEE 2001:138-141
18．何小琦，徐爱斌，章晓文．MCM-D多层金属布线互连退化模式和机理．电子产品可靠性与环境试验．2002，5：6-10
19．国防科工委．中华人民共和国国家军用标准．GJB451-90 可靠性维修性术语
20．史保华，贾新章，张德胜．微电子器件可靠性．第1版．西安电子科技大学出版社，1999：5-25
21．高社生，张玲霞．可靠性理论与工程应用．国防工业出版社，2002：7-13
22．陈昭宪．可靠性数据的收集与处理．华飞科技出版印刷公司，1988：166-167
23．徐立生．半导体器件的寿命分布．中国电子学会第一届学术年会论文选，广州，1981：198-205
24. P. D. T. O'Connor. Microelectronic system reliability prediction. IEEE Transactions on Reliability. 1983, R-32(1):9-13
25．贺国芳，许海宝．可靠性数据的收集与分析．国防工业出版社，1995：66-70
26．庄楚强，吴亚森．应用数理统计基础．华南理工大学出版社，1999：199-21
何国伟．电子产品的质量管理和可靠性．科学出版社，1983：159-170
27．姜伟卓，严伟，谢廉忠．LTCC多层微波互连基板布局布线设计及制造技术．电子工艺技术．2000，21(2)：81-84
28．韩振宇，徐忠华，张广能．低温共烧陶瓷基板制备技术研究发展．电子元件与材料．2000，19(6)：31-33
29．董兆文．LTCC基板制造工艺研究．电子元件与材料．1998，17(5)：24-28
30．中华人民共和国国家军用标准．GJB/Z 548-96 方法1010A温度循环
31．徐立生，马素芝，何建华等．通信卫星用GaAs微波场效应晶体管可靠性快速评价技术．半导体情报．1999，36(6)：53-55
32．可靠性试验用表．增订本．国防工业出版社，1987：37-102
33．[日]市田嵩，铃木和幸．郭建英，沙巨大译．机械工业出版社，1988
34．贺国芳，许海宝．可靠性数据的收集与分析．国防工业出版社，1995：125-128
35．蒋仁言，左明健．可靠性模型与应用．机械工业出版社，1999
36．可靠性基础．第四机械工业部标准化研究所，1975：121-156
37．卢昆祥．整机系统可靠性设计理论与实用技术．天津科学技术出版社，1987
38．李哲，祖光裕，张之圣，王文生．电子元器件的可靠性．天津大学出版社，1991
39. Philip E. Garrou, Iwona Turhk. Multichip Moudule Technology Handbook. McGraw Hill Inc. 1998:7.38-7.39
40. Seraphim D P. Microelectronics Packaging Handbook. New York, 1989: 853-922
41. Doane D A, Franzon P D. Multichip Module Technologies and Alternatives. New York, 2001
2．苏世民，梁春广．MCM—电子技术革命的挑战和机遇．半导体情报．1994，31(1)：1-4
3. Tucker M C, Meeting Global MCM Manufacturing Challenges, Solid State Technology, 1992,35(6):101
4. radeep Lall Shrikar Bhagath. An Overview of Multichip Modules, Solid State Technology, 1993,36(9):65
5．杨邦朝，张经国．多芯片组件(MCM)技术及其应用．电子科技大学出版社，2001：57
6．王毅．MCM的检测技术．电子王业专用设备．1994，23(1)：54
7. Tsukada Y, et al. Surface Laminar Circuit and Flip Chip Attach Packgeing. IMC 1992 Proceedings, 252
8. A prabhu, WJ Schaefer et al. High Reliability LTCC BGA for Telecom Application. IEEE/CPMT int'l Electronics Maufacturing Technology Symoposium 2000:311-323
9．田民波，梁彤翔等．多层基板中的多层陶瓷共烧技术．宇航材料工艺．1995，2：40-43
10. Rao R Tummala. Ceramic and glass-ceramic packaging in the 1990s. J.Am. Ceram.Soc.,1991,74(5):895-908
11. Patrick Thompson. Reliability Development and Qualification of a Low-Cost, PQFP-Based MCM. Electron9ic Components and Technology Conference ,IEEE 1994:186-190
12. Jimmy Yang. The Reliability Preformance Evaluation of High-Density Thin-Film Multichip Substrates. Multi-Chip Module Conference, 1992 Proceedings, 1992 IEEE: 94-97
13. Nien-Tsu Shen. Reliability by Design for MCM Manufacturing The
Roadmap and An Example. Multi-chip Module Conference, IEEE 1993:100-105
14. Zsolt Illyefalvi-vitez. Failure and Acceleration Models for MCM-Ls Tested by HAST. IEEE Electronic Components and Technology Conference, 2002:480-483
15. A.W. Lin, A.M. Lyons. Reliability and Thermal Characterization of A 3-Dimensional Multichip Module. IEEE, Electronic Components and Technology Conference, 1993 Proceedings, 43rd. IEEE 1993:71-79
16．杨克武．多芯片系统可靠性技术．半导体情报．1999，36(6)：1-5
17. X.Q. He, X. Ma, Y. Zhang. Elimination of Opens Failure Between Via Holes and Traces in LTCC Multilayer Substrate by coherent Shrinkage. IEEE 2001:138-141
18．何小琦，徐爱斌，章晓文．MCM-D多层金属布线互连退化模式和机理．电子产品可靠性与环境试验．2002，5：6-10
19．国防科工委．中华人民共和国国家军用标准．GJB451-90 可靠性维修性术语
20．史保华，贾新章，张德胜．微电子器件可靠性．第1版．西安电子科技大学出版社，1999：5-25
21．高社生，张玲霞．可靠性理论与工程应用．国防工业出版社，2002：7-13
22．陈昭宪．可靠性数据的收集与处理．华飞科技出版印刷公司，1988：166-167
23．徐立生．半导体器件的寿命分布．中国电子学会第一届学术年会论文选，广州，1981：198-205
24. P. D. T. O'Connor. Microelectronic system reliability prediction. IEEE Transactions on Reliability. 1983, R-32(1):9-13
25．贺国芳，许海宝．可靠性数据的收集与分析．国防工业出版社，1995：66-70
26．庄楚强，吴亚森．应用数理统计基础．华南理工大学出版社，1999：199-21
何国伟．电子产品的质量管理和可靠性．科学出版社，1983：159-170
27．姜伟卓，严伟，谢廉忠．LTCC多层微波互连基板布局布线设计及制造技术．电子工艺技术．2000，21(2)：81-84
28．韩振宇，徐忠华，张广能．低温共烧陶瓷基板制备技术研究发展．电子元件与材料．2000，19(6)：31-33
29．董兆文．LTCC基板制造工艺研究．电子元件与材料．1998，17(5)：24-28
30．中华人民共和国国家军用标准．GJB/Z 548-96 方法1010A温度循环
31．徐立生，马素芝，何建华等．通信卫星用GaAs微波场效应晶体管可靠性快速评价技术．半导体情报．1999，36(6)：53-55
32．可靠性试验用表．增订本．国防工业出版社，1987：37-102
33．[日]市田嵩，铃木和幸．郭建英，沙巨大译．机械工业出版社，1988
34．贺国芳，许海宝．可靠性数据的收集与分析．国防工业出版社，1995：125-128
35．蒋仁言，左明健．可靠性模型与应用．机械工业出版社，1999
36．可靠性基础．第四机械工业部标准化研究所，1975：121-156
37．卢昆祥．整机系统可靠性设计理论与实用技术．天津科学技术出版社，1987
38．李哲，祖光裕，张之圣，王文生．电子元器件的可靠性．天津大学出版社，1991
39. Philip E. Garrou, Iwona Turhk. Multichip Moudule Technology Handbook. McGraw Hill Inc. 1998:7.38-7.39
40. Seraphim D P. Microelectronics Packaging Handbook. New York, 1989: 853-922
41. Doane D A, Franzon P D. Multichip Module Technologies and Alternatives. New York, 2001