基于半导体光集成器件的毫米波拍频光源研究
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摘要
利用光学方法产生高频毫米波是近年来迅速发展的光纤无线通信(RoF)系统中的一项重要技术。相比传统的电子学方法,光生毫米波不仅能大大降低系统成本,还能实现较大范围的频率调谐。同时,光生毫米波技术还可以在雷达、制导以及遥感等领域获得广泛的应用。如果将光生毫米波系统进行单片集成,还能进一步降低系统的复杂度和成本,提高其性能和实用价值。
本论文针对光生低噪声毫米波信号的需要,设计并制作了基于边带注入锁定的毫米波集成拍频光源,对其光生微波的性能进行了系统的研究,并详细分析了边带注入锁定系统中影响相位噪声特性的因素,通过实验证明利用集成器件可以有效简化光生微波系统,改善光生毫米波信号的相位噪声特性。
论文首先研究了基于分立器件的边带注入锁定系统的性能。比较了利用单边带和双边带注入锁定获得的光生微波信号的相位噪声特性,并利用高阶边带的注入锁定获得了频率为42 GHz的低相位噪声微波信号。论文进一步分析了边带注入锁定系统的相干性与光生微波相位噪声特性的关系,发现主激光器的线型和拍频光之间的光程差是影响光生微波相位噪声特性的重要因素,并由此指出单片集成是改善相位噪声特性的有效途径。
在以上研究基础上,论文设计并制作了含有两个DFB激光器和一个Y分支波导的AlGaInAs多量子阱Y分支型集成拍频光源,并开展了基于外注入锁定和自注入锁定的集成拍频光源产生高频毫米波的实验研究。在外注入锁定方式中,集成拍频光源取代分立器件系统中的两个从激光器,从而消除了两束拍频光之间的光程差。在自注入锁定方式中,一个DFB激光器作为主激光器,另一个DFB激光器作为从激光器。将主激光器直接调制在张弛振荡频率附近,利用调制非线性增强产生多阶边带,可以通过单边带注入锁定有效地实现调制信号的高阶倍频。无论外注入锁定和自注入锁定,均获得了频率在40 GHz以上的高频毫米波,其相位噪声特性较基于分立器件的系统均有明显改善。同时,所产生的微波频率还可以实现GHz量级的调谐。
Optical generation of high-frequency millimeter-wave (mm-wave) is a key technology for radio over fiber (RoF) system, which has attracted much attention in recent years. Compared with traditional electronic methods, generation of mm-wave by optical means is not only able to reduce the system cost, but also capable to realize wide-range frequency tunability. Meanwhile, the technology also has wide applications in the fields of radar, missile guidance, remote sensing and so on. By monolithically integrating the optical mm-wave generation system, the complexity and cost of the system will be further reduced, as well as improving its performance and practicability.
In this dissertation, an integrated heterodyning light source based on sideband injection locking is designed and fabricated, and its performance in optical microwave generation is investigated systematically. Factors that influence the phase noise performance of the optically generated microwave carrier in a sideband injection locking system are also analyzed in detail. It is experimentally verified that monolithically integrated device is effective in reducing the complexity of optical microwave generation system and improving the phase noise characteristics of the generated microwave signal.
The performance of sideband injection locking system based on discrete lasers is studied first. The phase noise performance of microwave carriers generated by single- and double-sideband injection locking schemes is compared. Microwave carrier at 42 GHz with low phase noise is also generated by adopting high-order sideband injection locking. The influence of the coherence of the sideband injection locking system on the phase noise performance of the generated microwave carrier is then investigated. The lineshape of master laser and the optical path length difference between the two beating lights are found to be critical to the phase noise performance of the optically generated microwave. And it is further pointed out that monolithic integration is an efficient way to improve the phase noise performance of the sideband injection locking system.
An AlGaInAs multiple quantum well Y-branch integrated dual wavelength laser diode is then designed and fabricated, which monolithically integrates two DFB lasers with associated Y-branch coupler. Both external and self injection locking configurations are adopted to generate high-frequency millimeter-wave carrier by the integrated dual wavelength laser diode. In the external injection locking configuration, the integrated device is used in place of two discrete slave lasers and the optical path difference between the two beating lights is thus made negligible. In the self injection locking configuration, one DFB laser works as the master laser and the other one works as the slave laser. By directly modulating the master laser near its relaxation resonance frequency, multiple sidebands are generated due to enhanced modulation nonlinearity. As a result, frequency multiplication can be realized by means of single-sideband injection locking. In both external and self injection locking configurations, millimeter-wave carrier at a frequency over 40 GHz has been generated and the phase noise performance improves remarkably compared with system based on discrete lasers. In addition, a frequency tuning range on the order of GHz has also been demonstrated for the optically generated millimeter-wave carrier.
本论文针对光生低噪声毫米波信号的需要,设计并制作了基于边带注入锁定的毫米波集成拍频光源,对其光生微波的性能进行了系统的研究,并详细分析了边带注入锁定系统中影响相位噪声特性的因素,通过实验证明利用集成器件可以有效简化光生微波系统,改善光生毫米波信号的相位噪声特性。
论文首先研究了基于分立器件的边带注入锁定系统的性能。比较了利用单边带和双边带注入锁定获得的光生微波信号的相位噪声特性,并利用高阶边带的注入锁定获得了频率为42 GHz的低相位噪声微波信号。论文进一步分析了边带注入锁定系统的相干性与光生微波相位噪声特性的关系,发现主激光器的线型和拍频光之间的光程差是影响光生微波相位噪声特性的重要因素,并由此指出单片集成是改善相位噪声特性的有效途径。
在以上研究基础上,论文设计并制作了含有两个DFB激光器和一个Y分支波导的AlGaInAs多量子阱Y分支型集成拍频光源,并开展了基于外注入锁定和自注入锁定的集成拍频光源产生高频毫米波的实验研究。在外注入锁定方式中,集成拍频光源取代分立器件系统中的两个从激光器,从而消除了两束拍频光之间的光程差。在自注入锁定方式中,一个DFB激光器作为主激光器,另一个DFB激光器作为从激光器。将主激光器直接调制在张弛振荡频率附近,利用调制非线性增强产生多阶边带,可以通过单边带注入锁定有效地实现调制信号的高阶倍频。无论外注入锁定和自注入锁定,均获得了频率在40 GHz以上的高频毫米波,其相位噪声特性较基于分立器件的系统均有明显改善。同时,所产生的微波频率还可以实现GHz量级的调谐。
Optical generation of high-frequency millimeter-wave (mm-wave) is a key technology for radio over fiber (RoF) system, which has attracted much attention in recent years. Compared with traditional electronic methods, generation of mm-wave by optical means is not only able to reduce the system cost, but also capable to realize wide-range frequency tunability. Meanwhile, the technology also has wide applications in the fields of radar, missile guidance, remote sensing and so on. By monolithically integrating the optical mm-wave generation system, the complexity and cost of the system will be further reduced, as well as improving its performance and practicability.
In this dissertation, an integrated heterodyning light source based on sideband injection locking is designed and fabricated, and its performance in optical microwave generation is investigated systematically. Factors that influence the phase noise performance of the optically generated microwave carrier in a sideband injection locking system are also analyzed in detail. It is experimentally verified that monolithically integrated device is effective in reducing the complexity of optical microwave generation system and improving the phase noise characteristics of the generated microwave signal.
The performance of sideband injection locking system based on discrete lasers is studied first. The phase noise performance of microwave carriers generated by single- and double-sideband injection locking schemes is compared. Microwave carrier at 42 GHz with low phase noise is also generated by adopting high-order sideband injection locking. The influence of the coherence of the sideband injection locking system on the phase noise performance of the generated microwave carrier is then investigated. The lineshape of master laser and the optical path length difference between the two beating lights are found to be critical to the phase noise performance of the optically generated microwave. And it is further pointed out that monolithic integration is an efficient way to improve the phase noise performance of the sideband injection locking system.
An AlGaInAs multiple quantum well Y-branch integrated dual wavelength laser diode is then designed and fabricated, which monolithically integrates two DFB lasers with associated Y-branch coupler. Both external and self injection locking configurations are adopted to generate high-frequency millimeter-wave carrier by the integrated dual wavelength laser diode. In the external injection locking configuration, the integrated device is used in place of two discrete slave lasers and the optical path difference between the two beating lights is thus made negligible. In the self injection locking configuration, one DFB laser works as the master laser and the other one works as the slave laser. By directly modulating the master laser near its relaxation resonance frequency, multiple sidebands are generated due to enhanced modulation nonlinearity. As a result, frequency multiplication can be realized by means of single-sideband injection locking. In both external and self injection locking configurations, millimeter-wave carrier at a frequency over 40 GHz has been generated and the phase noise performance improves remarkably compared with system based on discrete lasers. In addition, a frequency tuning range on the order of GHz has also been demonstrated for the optically generated millimeter-wave carrier.
引文
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