利用添加剂作为退火溶剂:阐明溶剂在调控异质结薄膜形貌的作用
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- 英文论文题名：Using Additive Solvent as the Annealing Solvent: a Way to Clarify the Role of Solvent in Molphology Manipulation of BHJ Film
- 论文作者：陈玉霞 ; 詹传郎 ; 姚建年
- 英文论文作者：Yuxia Chen ; Chuanlang Zhan ; Jiannian Yao ; Institut of Chemistry ; Chinese Academy of Sciences
- 年：2016
- 作者机构：中国科学院化学研究所;
- 论文关键词：有机太阳能电池 ; 添加剂 ; 溶剂退火 ; 形貌调控
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第二十二分会：有机光伏的机遇和挑战
- 语种：中文
- 分类号：TM914.4
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-第二十二分会 ; 有机光伏的机遇和挑战
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：1
- 文件大小：141k
- 原文格式：D
- 会议级别：全国
摘要
通常,太阳能电池需要通过器件优化才能得到最优的性能。其中常用的方法是在成膜溶剂中加入高沸点的添加剂,或者利用溶剂退火对薄膜形貌进行调控。目前的研究阐明了形貌和性能的关系,但对于如何利用这些方法来理性的调控形貌的研究进展不多。这里我们结合了添加剂的方法和溶剂退火的方法,利用添加剂作为溶剂来进行形貌调控。这种两步法同时利用了添加剂的选择溶解性来控制溶剂和材料的作用强度,和利用溶剂褪火进行溶剂和材料之间作用时间的调控。最终我们发现不同种类的添加剂在一步法里使用的时候,优化得到的薄膜形貌差异较大,而利用两步法都能得到相似的薄膜形貌和高效的性能。
Herein, we present a method that combines the additive processing method with the SVA method to solve the limitation of additive incorporation. As shown in Figure 1A, instead of adding additive into the processing solvent in one-step method, we process the blend film with the host solvent at first, and then using the high Tb additive as the annealing solvent to reconstruct the film. The duration of the interaction between the solvent and the materials could be gently adjust through the annealing time without affecting the film forming. It turns out that device process with different additives in this two-step method can give almost the same film morphology and performance.
Herein, we present a method that combines the additive processing method with the SVA method to solve the limitation of additive incorporation. As shown in Figure 1A, instead of adding additive into the processing solvent in one-step method, we process the blend film with the host solvent at first, and then using the high Tb additive as the annealing solvent to reconstruct the film. The duration of the interaction between the solvent and the materials could be gently adjust through the annealing time without affecting the film forming. It turns out that device process with different additives in this two-step method can give almost the same film morphology and performance.
引文
[1]Y.X.Chen,X.Zhang,C.L.Zhan,J.N.Yao,ACS Appl.Mater.Interfaces 2015,7:6462-6471.
[2]X.Zhang,C.Zhan,J.Yao,Chem.Mater.2015,27:166-173.
[2]X.Zhang,C.Zhan,J.Yao,Chem.Mater.2015,27:166-173.