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g-C3N4(001)/BiVO4(010)界面复合体系第一性原理研究
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摘要
采用第一性原理计算方法,我们研究了g-C3N4(001)/BiVO4(010)纳米复合体系的结构、电子结构、光学性质。我们发现g-C3N4(001)能够稳定地吸附在BiVO4(010)表面上,且形成波浪形起伏形状。由于价带顶N 2p电子态的引入,计算得到的g-C3N4(001)/BiVO4(010)的带隙比BiVO4或BiVO4(010)小。g-C3N4(001)/BiVO4(010)复合体系的光生电子从BiVO4(010)的导带注入到g-C3N4(001)的导带,界面处独特的电荷分布有助于光生载流子的分离。这种电子注入和载流子分离能够有效阻止电子-空穴对的复合。计算的光吸收特性表明吸收变发生了红移。计算结果表明g-C3N4(001)/BiVO4(010)界面结构具有显著的可见光催化活性
The structural,electronic,and optical properties of a g-C3N4(001)/BiVO4(010) nanocomposite have been investigated using first-principles calculations.Photo-excited electrons can be injected to the conduction band of the BiVO4(010) from the conduction band of the g-C3N4(001).The proper interface charge distribution facilitates carrier separation in the g-C3N4(001)/BiVO4(010) interface region.The electron injection and carrier separation can prevent the recombination of electron-hole pairs.
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