一款铁电存储器的电离总剂量效应研究
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- 英文论文题名：The total ionizing radiation effects of ferroelectric memory
- 论文作者：牛振红 ; 张力 ; 白锦良 ; 李建华 ; 李志峰 ; 刘佳琪
- 英文论文作者：NIU Zhen-hong ; ZHANG Li ; BAI Jin-liang ; LI Jian-hua ; LI Zhi-feng ; LIU Jia-qi ; National Key Laboratory of Science and Technology on Test Physics and Numerical Mathematics ; Beijing Institute of Space Long March Vehicle
- 年：2015
- 作者机构：试验物理与计算数学国家级重点实验室;北京航天长征飞行器研究所;
- 论文关键词：铁电存储器 ; 电离总剂量 ; 辐射效应
- 英文论文关键词：ferroelectric memory ; irradiation ; damage mechanism
- 会议召开时间：2015-09-21
- 会议录名称：中国核科学技术进展报告（第四卷）——中国核学会2015年学术年会论文集第7册（计算物理分卷、核物理分卷、粒子加速器分卷、核聚变与等离子体物理分卷、脉冲功率技术及其应用分卷、辐射物理分卷）
- 语种：中文
- 分类号：TP333
- 学会代码：EGVD
- 会议名称：中国核学会2015年学术年会
- 会议地点：中国四川绵阳
- 主办单位：中国核学会
- 学会名称：中国核学会
- 页数：5
- 文件大小：530k
- 原文格式：O
- 会议级别：全国
摘要
铁电存储器由于自身的非易失特点,在航空航天等领域得到广泛应用。本文针对某款铁电存储器进行了电离总剂量辐照试验,测试了其数据读、写功能及功耗电流随电离总剂量的变化,研究了铁电存储器的电离总剂量效应,初步分析了其损伤机理。
Ferroelectric random memory was irradiated by γ rays.The variation of data read-whrite functions and power current with total dose were tested.The total ionizing radiation effects were studied,damage mechanism was analyzed.
Ferroelectric random memory was irradiated by γ rays.The variation of data read-whrite functions and power current with total dose were tested.The total ionizing radiation effects were studied,damage mechanism was analyzed.
引文
[1]ANDERSON J R.Ferroelectric Storage Elements for Digital Computers and Switching Systems[J].Electr Engineering,1952,71;916-922
[2]Verbeck C,et al.Nuclear Evaluation of PZT thin Films for non Volatile Memories[C].RADECS 93.Second European Conference on Radiation and its Effects on Components and Systemsl994,p.166-73
[3]Y.M.Cole,et al.A Study of Radiation Vulnerability of Ferroelectric Material and Devices",IEEE Tran.Nuc.Sci.Vol.41,NO.3 1994
[4]K.Kim et al.Advanced Integration Process Technology for Highly Reliable Ferroelectric Devices,Integ.Ferroelectrics,2004,v.61
[2]Verbeck C,et al.Nuclear Evaluation of PZT thin Films for non Volatile Memories[C].RADECS 93.Second European Conference on Radiation and its Effects on Components and Systemsl994,p.166-73
[3]Y.M.Cole,et al.A Study of Radiation Vulnerability of Ferroelectric Material and Devices",IEEE Tran.Nuc.Sci.Vol.41,NO.3 1994
[4]K.Kim et al.Advanced Integration Process Technology for Highly Reliable Ferroelectric Devices,Integ.Ferroelectrics,2004,v.61