基于波形工程的高效率Doherty功放设计
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- 英文论文题名：Waveform Engineered Design of High-Efficiency Doherty Power Amplifier
- 论文作者：杨章 ; 和新阳 ; 杨飞
- 英文论文作者：Yang Zhang ; He Xinyang ; Yang Fei ; China Academy of Space Technology (Xi'an)
- 年：2017
- 作者机构：中国空间技术研究院西安分院;
- 论文关键词：Doherty功放 ; F类功放 ; 氮化镓 ; 回退效率空间
- 英文论文关键词：Doherty PA ; Class-F ; Gallium Nitride ; Back-Off Efficiency Space
- 会议召开时间：2017-05-08
- 会议录名称：2017年全国微波毫米波会议论文集（中册）
- 英文会议录名称：Proceedings of 2017 National Conference on Microwave and Millimeter Waves(NCMMW2017)
- 语种：中文
- 分类号：TN722.75
- 学会代码：ZDWB
- 会议名称：2017年全国微波毫米波会议
- 会议地点：中国浙江杭州
- 主办单位：中国电子学会
- 学会名称：中国电子学会微波分会
- 页数：4
- 文件大小：512k
- 原文格式：D
- 会议级别：全国
摘要
本文介绍了一款双输入型的高效率Doherty功放,并且载波功放和峰值功放均采用F类功放实现,用以提高整个DPA的效率。为了对峰值功放开启时间进行分析,文章对设计的DPA的6d B回退效率空间进行了描绘,该效率空间是基于输入功率的分配比和峰值单元的栅极电压给出的。F类的匹配网络的设计从晶体管内部电流源参考平面开始。为了验证设计的有效性,应用Ga N器件加工了一款双输入型的DPA。测试结果显示,DPA在饱和处的效率为72.8%,输出功率为43.66d Bm,在输入回退8d B的动态范围内,漏极效率保持在52%以上,输出功率在40.3d Bm以上。
This paper introduces a dual-input high-efficiency Doherty power amplifier(PA) with class-F carrier and peaking amplifiers to enhance both the saturation and back-off efficiency simultaneously. The 6d B back-off efficiency space, according to the input power arrangement and gate voltage of the peaking cell, of the designed Doherty PA is depicted so as to analyze the proper turn-on moment of the peaking branch. The class-F load matching network is designed at the transistor intrinsic current-source reference plane. To validate the designed architecture, a dual-input Doherty PA based on gallium nitride(Ga N) is fabricated and tested. Measurement results shows that the drain efficiency(DE) of the Doherty PA reaches 65% with saturation output power of 43.5d Bm, the DE is higher than 52% at 11.5d B back-off of input power with output power of 36.1d Bm.
This paper introduces a dual-input high-efficiency Doherty power amplifier(PA) with class-F carrier and peaking amplifiers to enhance both the saturation and back-off efficiency simultaneously. The 6d B back-off efficiency space, according to the input power arrangement and gate voltage of the peaking cell, of the designed Doherty PA is depicted so as to analyze the proper turn-on moment of the peaking branch. The class-F load matching network is designed at the transistor intrinsic current-source reference plane. To validate the designed architecture, a dual-input Doherty PA based on gallium nitride(Ga N) is fabricated and tested. Measurement results shows that the drain efficiency(DE) of the Doherty PA reaches 65% with saturation output power of 43.5d Bm, the DE is higher than 52% at 11.5d B back-off of input power with output power of 36.1d Bm.
引文
[1]S.C.Cripps,Advanced Techniques in RF Power Amplifiers Design.Norwood,MA:Artech House,2006.
[2]P.J.Tasker and J.Benedikt.Waveform Inspired Models and the Harmonic Balance Emulator[M].IEEE Microwave Magazine,2011,12(2):38-54.
[3]W.H.Chen,S.L.Zhang,Y.J.Liu,Y.C.Liu and A.M.Ghannouchi.A Concurrent Dual-Band Uneven Doherty Power Amplifier with Frequency Dependent Input Power Division[J].IEEE Trans.Circuits Systems?Ⅰ:Regular Papers,2014,61(2):552-561.
[4]X.A.Nghiem,J.Q.Guan and R.Negra.Broadband Sequential Power Amplifier with Doherty-Type Active Load Modulation[J].IEEE Trans.Micro.Theory Tech.,2015,63(9):2821-2832.
[5]A.Z.Markos,K.Bathich,F.Golden and G.Boeck.A 50 W unsymmetrical Ga N Doherty amplifier for LTE applications[C].Proc.40th Eur.Microw.Conf.,Paris,France,Sept.2010.
[6]R.A.Beltran.Class-F and inverse Class-F power amplifier loading networks design based upon transmission zeros[C].IEEE MTT-S IMS,2014.
[7]S.C.Cripps.RF Power Amplifier for Wireless Communication,2th ed[M].Norwood,MA:Artech House,2006.
[8]C.Z.Fan,X.W.Zhu,J.Xia and L.Zhang,Efficiency Enhanced Class-F Doherty Power Amplifier at 3.5GHz for LTE-Advanced Application[C].Proc.APMC,2013,pp.1-7.
[9]J.C.Park,D.S.Kim and C.S.Yoo.Efficiency enhancement of the Doherty amplifier for 3.5 GHz Wi Max application using class-F circuitry[J].Microw.Optical Tech.Lett.,2010,52(3):570-573.
[2]P.J.Tasker and J.Benedikt.Waveform Inspired Models and the Harmonic Balance Emulator[M].IEEE Microwave Magazine,2011,12(2):38-54.
[3]W.H.Chen,S.L.Zhang,Y.J.Liu,Y.C.Liu and A.M.Ghannouchi.A Concurrent Dual-Band Uneven Doherty Power Amplifier with Frequency Dependent Input Power Division[J].IEEE Trans.Circuits Systems?Ⅰ:Regular Papers,2014,61(2):552-561.
[4]X.A.Nghiem,J.Q.Guan and R.Negra.Broadband Sequential Power Amplifier with Doherty-Type Active Load Modulation[J].IEEE Trans.Micro.Theory Tech.,2015,63(9):2821-2832.
[5]A.Z.Markos,K.Bathich,F.Golden and G.Boeck.A 50 W unsymmetrical Ga N Doherty amplifier for LTE applications[C].Proc.40th Eur.Microw.Conf.,Paris,France,Sept.2010.
[6]R.A.Beltran.Class-F and inverse Class-F power amplifier loading networks design based upon transmission zeros[C].IEEE MTT-S IMS,2014.
[7]S.C.Cripps.RF Power Amplifier for Wireless Communication,2th ed[M].Norwood,MA:Artech House,2006.
[8]C.Z.Fan,X.W.Zhu,J.Xia and L.Zhang,Efficiency Enhanced Class-F Doherty Power Amplifier at 3.5GHz for LTE-Advanced Application[C].Proc.APMC,2013,pp.1-7.
[9]J.C.Park,D.S.Kim and C.S.Yoo.Efficiency enhancement of the Doherty amplifier for 3.5 GHz Wi Max application using class-F circuitry[J].Microw.Optical Tech.Lett.,2010,52(3):570-573.