高工作电压GaAs HFET
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摘要
通过对结构和性能的分析与优化,设计并研制了不同场板和宽槽条件下的高工作电压GaAs HFET器件。直流和射频测试结果表明:提升场板长度和宽槽宽度可以有效提高器件的工作电压。器件在南京电子器件研究所流片,最终制备出的器件性能为:击穿电压大于84 V,在20 V工作电压下截止频率为9 GHz,3 GHz时功率增益为15.87 dB、功率附加效率为53%。
High operating voltage GaAs HFETs with different field-plates and wide-recesses were designed and fabricated after performance analysis and structure optimization. The DC test and RF test results indicate that increasing wide-recess and field-plate can improve operating voltage of device. The device is fabricated in Nanjing Electronic Devices Institute. The final performances of device are that breakdown voltage is greater than 84 V, cut-off frequency is 9 GHz at 20 V, power gain is 15.87 dB and power added efficiency is 53% at 3 GHz.
High operating voltage GaAs HFETs with different field-plates and wide-recesses were designed and fabricated after performance analysis and structure optimization. The DC test and RF test results indicate that increasing wide-recess and field-plate can improve operating voltage of device. The device is fabricated in Nanjing Electronic Devices Institute. The final performances of device are that breakdown voltage is greater than 84 V, cut-off frequency is 9 GHz at 20 V, power gain is 15.87 dB and power added efficiency is 53% at 3 GHz.
引文
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[2]Drinkwine M J,Winslow T,MillerD,et a1.An ionimplanted GaAs MESFET process for 28 V S-band MMIC applications[C].CS Mantech Conf,2006:187-190.
[3]David Fanning,Anthony Balistreri,Edward Beamlll,et a1.High voltage GaAs PHEMT technology forS-band high power amplifiers[C].CS Mantech Conf,2007:173-176.
[4]Yamamoto T,Inoue K,Igarashi T,et a1.A 5.5GHz,25 W GaAs power-FET chip at 26Voperation[C].European Microwave Conf,2004,3:1313-1316.
[5]林罡.高功率密度高效率28V GaAs PHEMT技术[J].固体电子学研究与进展,2013,33(3):240-243.
[6]Ajayan J,Ravichandran T,Mohankumar P,et al.Investigation of DC-RF and breakdown behavior in Lg=20nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications[J].AEU-International Journal of Electronics and Communications,2018,84(000):387-393.
[7]李效白编著.砷化镓微波功率场效应晶体管及其集成电路[M].北京:北京科学出版社,1998:41-50.
[8]Horio K,Tanaka T,Itagaki K,et al.Two-dimensional analysis of field-plate effects on surface-state-related current transients and power slump in GaAs FETs[J].IEEE Transactions on Electron Devices,2011,58(3):698-703.
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