基于SiC基底的Y_2O_3/Al_2O_3堆栈MOS电容的特性研究
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摘要
通过在n型碳化硅(SiC)晶圆上用物理气相沉积法(PVD)和原子层沉积法(ALD)分别沉积Y_2O_3介质和Al_2O_3,形成金属/Al_2O_3/Y_2O_3/SiC高k介质堆栈结构MOS电容。X射线光电子能谱(XPS)分析研究Al_2O_3/Y_2O_3堆栈结构氧化层介质之间以及氧化层与SiC晶圆之间的相互扩散和反应关系;研究不同金属电极MOS电容的C-V特性,Ni电极MOS电容具有良好的稳定性,对介质层的相对介电常数影响最小,Mg电极MOS电容的理想平带电压最小,同时氧化层陷阱密度最小;随着C-V测试频率的降低,氧化层电容Cox逐渐增加,Al_2O_3/Y_2O_3介质层的相对介电常数逐渐增大,等效氧化层厚度(EOT)减小,平带电容电压减小。
Y_2O_3 and Al_2O_3 were deposited in turn on SiC wafer by physical vapor deposition (PVD) and atomic layer deposition (ALD) respectively to get metal/Al_2O_3/Y_2O_3/SiC MOS capacitance. The diffusion effect between Y_2O_3 and Al_2O_3 or oxide layer and SiC was discovered in Al_2O_3/Y_2O_3 stack dielectric MOS Capacitance with X-ray photoelectron spectroscopy (XPS). The C-V characters of the MOS capacitance with various electrode metals were compared. Relative dielectric constant of the dielectric layer varied little in MOS capacitance with Ni electrode,and the minimum ideal flat-band voltage and trap density were discovered in MOS capacitance with Mg electrode. When the C-V test frequency decreased,the MOS capacitance value and relative dielectric constant of the dielectric layer would increase,and the equivalent oxide thickness (EOT) and flat-band voltage would decrease.
Y_2O_3 and Al_2O_3 were deposited in turn on SiC wafer by physical vapor deposition (PVD) and atomic layer deposition (ALD) respectively to get metal/Al_2O_3/Y_2O_3/SiC MOS capacitance. The diffusion effect between Y_2O_3 and Al_2O_3 or oxide layer and SiC was discovered in Al_2O_3/Y_2O_3 stack dielectric MOS Capacitance with X-ray photoelectron spectroscopy (XPS). The C-V characters of the MOS capacitance with various electrode metals were compared. Relative dielectric constant of the dielectric layer varied little in MOS capacitance with Ni electrode,and the minimum ideal flat-band voltage and trap density were discovered in MOS capacitance with Mg electrode. When the C-V test frequency decreased,the MOS capacitance value and relative dielectric constant of the dielectric layer would increase,and the equivalent oxide thickness (EOT) and flat-band voltage would decrease.
引文
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[3]Simoen E,Jayachandran S,Delabie A,et al.Comparison between Si/Si O2Mid-Gap Interface States and Deep Levels Associated with Silicon-Oxygen Superlattices in p-Type Silicon[J].Physica Status Solidi,2016,13(10-12):718-723.
[4]Stein R,Kim J S,Lyon S,et al.Assessing MOS Interface Quality for Silicon Quantum Dot Device Fabrication[C]//APS Meeting Abstracts.2016:1-1.
[5]Rong L,Meng Z,Xiao C,et al.Impact of Defects on Local Optical Dielectric Properties of Si/Si O2Interfaces by Layered Capacitor Modeling[J].Applied Physics A,2016,122(4):1-8.
[6]Anders M A,Lenahan P M,Lelis A J.Negative Bias Instability in4H-Si C MOSFETS:Evidence for Structural Changes in the Si C[C]//2015 IEEE International Reliability Physics Symposium.IEEE,Monterey,CA,USA,2015:3E.4.1-3E.4.5.
[7]Kaschieva S,Angelov C,Dmitriev S N.Me V Electron Irradiation of Si-Si O2Structures with Magnetron Sputtered Oxide[C]//Journal of Physics:Conference Series.IOP Publishing,2016,700(1):012036.
[8]Menia Beier-Moebius;Josef Lutz.Breakdown of Gate Oxide of Si C-MOSFETs and Si-IGBTs under High Temperature and High Gate Voltage[C]//International Exhibition and Conference for Power Electronics,Intelligent Motion,Renewable Energy and Energy Management(PCIM Europe,Nuremberg,Germany)2017:1-8.
[9]Idris M I,Weng M H,Chan H K,et al.Electrical Stability Impact of Gate Oxide in Channel Implanted Si C NMOS and PMOS Transistors[C]//European Conference on Silicon Carbide and Related Materials(ECSCRM,Greece)2016.
[10]Chbili Z,Matsuda A,Chbili J,et al.Modeling Early Breakdown Failures of Gate Oxide in Si C Power MOSFETs[J].IEEE Transactions on Electron Devices,2016,63(9):3605-3613.
[11]Lin Liang,Li Wei,Li Sichao,et al.Interface Properties Study on Si C MOS with High-κAl2O3Gate Dielectric[C]//13th IEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT,Hangzhou,CA)2016:67-69
[12]Adam T Neal,Jiangjiang Gu,Mike Bolen,et al.Electronic Transport Properties in Top-Gated Epitaxial Graphene on Silicon Carbide with ALD Al2O3high-K Dielectric[C]//18th Biennial University/Government/Industry Micro/Nano Symposium,West Lafayette,US,2010:1-3.
[13]Kumar S,Goel E,Singh K,et al.A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors with a Si O2/high-k Stacked Gate-Oxide Structure[J].IEEE Transactions on Electron Devices,2016,63(8):3291-3299.
[15]Cao D,Cheng X,Zheng L,et al.Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Hf O2/Al2O3Nanolaminate Structure on Si[J].Journal of Vacuum Science and Technology B,2015,33(1):01A101.
[16]Wang Y,Jia R,Zhao Y,et al.Investigation of Leakage Current Mechanisms in La2O3/Si O2/4H-Si C MOS Capacitors with Varied Si O2Thickness[J].Journal of Electronic Materials,2016,45(11):5600-5605.
[17]SchiliròE,Di Franco S,Fiorenza P,et al.Atomic Layer Deposition of Al2O3Thin Films for Metal Insulator Semiconductor Applications on 4H-Si C[C]//Materials Science Forum Trans Tech Publications,2016,858:685-688.
[18]Jeon S,Yang H,Park D G,et al.Electrical and Structural Properties of Nanolaminate(Al2O3/Zr O2/Al2O3)for Metal Oxide Semiconductor Gate Dielectric Application[J].Jap Appl Phys Part 1-Regular Papers Short Notes and Review Papers,2002,41(4B):2390-2393.
[19]凌惠琴,丁冬雁,周晓强,等.Ti O2/Al2O3堆栈结构high-k薄膜的制备及性能[J].稀有金属材料与工程,2008,37(S1):326-329.
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