Mg_xZn_(1-x)O复合薄膜带隙展宽的研究
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摘要
利用溶胶-凝胶旋涂工艺在普通玻璃基底上生长本征ZnO薄膜和Mg_xZn_(1-x)O复合薄膜.采用X射线衍射仪(XRD)、紫外可见分光光度计(UV-vis)、光致发光(PL)等测试手段对样品进行表征,分别对半导体合金薄膜的晶格参数与结构、结晶质量、光学透过率及其禁带宽度进行分析与研究.比较Mg_xZn_(1-x)O薄膜与本征ZnO薄膜的XRD图谱后发现,Mg元素可提高薄膜的结晶质量,但是复合薄膜的c轴择优取向没有因为Mg元素的引入而得到改善.随着Mg元素掺杂量的增加,Mg_xZn_(1-x)O(x=0.10、0.20、0.30)复合薄膜的带隙随之变宽,薄膜组分为Mg0.20Zn0.80O和Mg0.30Zn0.70O时,光致发光谱中出现了强度较大的紫外发光峰,组分为Mg0.20Zn0.80O薄膜的带隙展宽效果较为明显且光学透过率较优.
Intrinsic ZnO thin films and Mg_xZn_(1-x)O thin films were prepared on glass substrate by solgel technique adopting spin coating process.The lattice parameters,structure and crystal quality,photoluminescence and transmission properties were investigated by X-ray diffraction(XRD),photoluminescence(PL)and UV-Vis spectrophotometer(UV).Comparing XRD patterns of Mg_xZn_(1-x)O films and intrinsic ZnO thin films,Mg element can improve the quality of the crystallization of the thin film,but the c-axis preferred orientation of composite membrane was not improved by the introduction of Mg element.With the increase of the amount of doping Mg element,the band gaps of Mgx Zn1-xO(x=0.1,0.2,0.3)composite films are widened.The UV emission peak with high intensity appeared in the photoluminescence spectra of Mg0.2 Zn0.8 O and Mg0.3 Zn0.7 O,and the Mg0.2 Zn0.8 O film owns the relatively wide band gap and the higher optical transmittance.
Intrinsic ZnO thin films and Mg_xZn_(1-x)O thin films were prepared on glass substrate by solgel technique adopting spin coating process.The lattice parameters,structure and crystal quality,photoluminescence and transmission properties were investigated by X-ray diffraction(XRD),photoluminescence(PL)and UV-Vis spectrophotometer(UV).Comparing XRD patterns of Mg_xZn_(1-x)O films and intrinsic ZnO thin films,Mg element can improve the quality of the crystallization of the thin film,but the c-axis preferred orientation of composite membrane was not improved by the introduction of Mg element.With the increase of the amount of doping Mg element,the band gaps of Mgx Zn1-xO(x=0.1,0.2,0.3)composite films are widened.The UV emission peak with high intensity appeared in the photoluminescence spectra of Mg0.2 Zn0.8 O and Mg0.3 Zn0.7 O,and the Mg0.2 Zn0.8 O film owns the relatively wide band gap and the higher optical transmittance.
引文
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[2]LEE J H,KO K H,PARK B O.Electrical and optical properties of ZnO transparent conducting films by the sol-gel method[J].Journal of Crystal Growth,2003,247(1/2):119-125.
[3]PARK W I,YI G C,JANG H M.Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO(0≤x≤0.49)thin films[J].Applied Physics Letters,2001,79(13):2022-2024.
[4]OHTOMO A,KAWASAKI M,KOIDA T,et al.MgxZn1-xO,as aⅡ-Ⅵwidegap semiconductor alloy[J].Applied Physics Letters,1998,72(19):2466-2468.
[5]CHOOPUN S,VISPUTE R D,YANG W,et al.Realization of band gap above 5.0eV in metastable cubic-phase MgxZn1-xO alloy films[J].Applied Physics Letters,2002,80(9):1529-1531.
[6]KUMAR S,GUPTE V,SREENIVAS K.Structural and optical properties of magnetron sputtered MgxZn1-xO thin films[J].Journal of Physics Condensed Matter,2006,18(13):3343.
[7]周军,方庆清,王保明,等.镁含量和热处理对MgxZn1-xO薄膜结构和发光性能的影响[J],物理学报,2008,57(10):6614-6618.
[8]HE H P,LIN S S,YUAN G D,et al.Single-crystalline sodium-doped p-type ZnO and ZnMgO nanowires via combination of thinfilm and nano techniques[J].Journal of Physical Chemistry C,2015,115(39):19018-19022.
[9]王玉新,孙景昌,郑亚茹,等.衬底温度对ZnO:Al薄膜结构和光透过性能的影响[J].辽宁师范大学学报(自然科学版),2012,35(4):478-481.
[10]BAI S N,TSAI H H,TSENG T Y.Structural and optical properties of Al-doped ZnO nanowires synthesized by hydrothermalmethod[J].Thin Solid Films,2007,516(2):155-158.
[11]丁圣,李梦轲,王雪红,等.取向ZnO纳米线阵列的生长机理及发光特性[J].辽宁师范大学学报(自然科学版),2006,29(3):305-307.
[12]TIRON V,COSTIN C,SIRGHI L,et al.Reactive HIPIMS with auxiliary Al electrode for ZnO:Al thin film deposition[J].Materials Science and Engineering,2012,39:10-12.
[13]SHUKLA A,KAUSHIK V K,PRASHER D.Growth and characterization of MgxZn1-xO thin films by aerosol-assisted chemical vapor deposition(AACVD)[J].Electron Mater Lett,2014,10(1):61-65.
[14]CHEN J,WANG J.Research on optical properties of Al-doped ZnO films[J].Journal of Functional Materials,2010,41(1):694-696.
[15]王玉新,刘奇,刘子伟,等.Al掺杂量对N-Al共掺ZnO薄膜光学性能的研究[J].辽宁师范大学学报(自然科学版),2016,39(2):181-185.
[16]OZGUR U,ALIVOV Y I,LIU C,et al.A comprehensive review of ZnO materials and devices[J].Appl Phyas,2005,98(4):1-11.
[17]PARK C H,ZHANG S B,WEI S H.Origin of p-type doping difficulty in ZnO:the impurity perspective[J].Physical Review B,2002,66(7):429-436.
[18]TANAKA H,IHARA K,MIYATA T,et al.Low resistivity polycrystalline ZnO:Al thin films prepared by pulsed laser deposition[J].Journal of Vacuum Science and Technology A,2004,22(4):1757-1762.