采用Si_(1-x)Ge_x渐变缓冲层技术生长Si基Ge薄膜及其性质分析
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摘要
利用超高真空磁控共溅沉积系统在Si(100)衬底上溅射Ge组分渐变的Si_(1-x)Ge_x缓冲层,并在其上制备Ge薄膜,采用快速热退火(RTA)对Ge薄膜进行退火处理。采用X薄膜表征。结果表明:使用该方法制备的Ge800℃,110 s的退火条件下随衬底温度的升高,Ge500℃时磁控溅射沉积的Ge薄膜,经800℃,110 s尺寸达到41 nm,为后续替代锗单晶作为多结电池衬底材料打下良好的基础。
Ge thin film with graded Si_(1-x)Ge_x buffer layers were prepared by dual targets magnetron sputtering on Si(100)substrate,The Ge film was annealed with rapid thermal annealing(RTA)equipment. Ge thin film was characterized using X-ray diffraction(XRD),Raman spectrometer,scanning electron microscope(SEM). The results show that the interface of epitaxial layers is clear;deposition of germanium film critical crystallization temperature is about 375 ℃;Under the annealing condition of 800 ℃,110 seconds,germanium films present Ge(220)preferred orientation growth when substrate temperature is 300 ℃,germanium films present Ge(111)preferred orientation growth when substrate temperature is 500 ℃,analyzes the reasons for those results and determine the best process parameters is 500 ℃substrate temperature,800 ℃annealing temperature and 110 seconds annealing time,under this condition germanium film Ge(111)orientation reached 74%,and its grain size reached 41 nm for subsequent instead of single crystal germanium as multi-junction concentrated battery substrate material provides a effective foundation.
Ge thin film with graded Si_(1-x)Ge_x buffer layers were prepared by dual targets magnetron sputtering on Si(100)substrate,The Ge film was annealed with rapid thermal annealing(RTA)equipment. Ge thin film was characterized using X-ray diffraction(XRD),Raman spectrometer,scanning electron microscope(SEM). The results show that the interface of epitaxial layers is clear;deposition of germanium film critical crystallization temperature is about 375 ℃;Under the annealing condition of 800 ℃,110 seconds,germanium films present Ge(220)preferred orientation growth when substrate temperature is 300 ℃,germanium films present Ge(111)preferred orientation growth when substrate temperature is 500 ℃,analyzes the reasons for those results and determine the best process parameters is 500 ℃substrate temperature,800 ℃annealing temperature and 110 seconds annealing time,under this condition germanium film Ge(111)orientation reached 74%,and its grain size reached 41 nm for subsequent instead of single crystal germanium as multi-junction concentrated battery substrate material provides a effective foundation.
引文
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[3]王锦,陶科,李国峰,等.氢气氛退火对硅上低温外延制备的硅锗薄膜性能的影响[J].无机材料学报,2017,32(2):191-196.[3]Wang Jin,Tao Ke,Li Guofeng,et al.Effect of hydrogen annealing on the property of low-temperature epitaxial growth of sige thin films on Si substrate[J].Journal of Inorganic Materials,2017,32(2):191-196.
[4]Kim Byongju,Kim Sun-Wook,Jang Hyunchul,et al.Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays[J].Thin Solid Films,2014,557:55-60.
[5]Thomas S G,Bharatan S,Jones R E,et al.Structural characterization of thick high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition[J].Journal of Electronic Materials,2003,32(9):976-980.
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[7]Sutter P,Müller E,Tao S,et al.Magnetron sputter epitaxy of Si/Ge heterostructures[J].Selected Topics in Group IV and II-VI Semiconductors,1996,157(1-4):172-176.
[8]冯团辉,卢景霄,张宇翔,等.快速光热退火法制备多晶硅薄膜的研究[J].电子元件与材料,2005,24(2):26-28.[8]Feng Tuanhui,Lu Jingxiao,Zhang Yuxiang,et al.Study of preparing polycrystalline silicon thin films by RTA[J].Electronic Components&Materials,2005,24(2):26-28.
[9]Chen Nuo-Fu,Tao Quanli,Wei Lishuai,et al.Crystallization of amorphous silicon films by photoninvolved rapid thermal annealing[J].Journal of Physics D Applied Physics,2017,50(43):1-13.