Formation of ZnGa_2O_4 films by multilayer deposition and subsequent thermal annealing
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摘要
The Ga2O3/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga2O3layers are in a range of 19 nm–2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa2O4film is achieved via the annealing of the Ga2O3/ZnO multilayer film. The influences of original Ga2O3sublayer thickness on the optical and structural properties of Ga2O3/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga2O3sublayer, the optical band-gap of Ga2O3/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga2O3and ZnGa2O4.
The Ga2O3/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga2O3layers are in a range of 19 nm–2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa2O4film is achieved via the annealing of the Ga2O3/ZnO multilayer film. The influences of original Ga2O3sublayer thickness on the optical and structural properties of Ga2O3/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga2O3sublayer, the optical band-gap of Ga2O3/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga2O3and ZnGa2O4.
The Ga2O3/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga2O3layers are in a range of 19 nm–2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa2O4film is achieved via the annealing of the Ga2O3/ZnO multilayer film. The influences of original Ga2O3sublayer thickness on the optical and structural properties of Ga2O3/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga2O3sublayer, the optical band-gap of Ga2O3/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga2O3and ZnGa2O4.
引文
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[9]Li C,Yan J L,Zhang L Y and Zhao G 2012 Chin.Phys.B 21 127104
[10]Zhang L Y,Yan J L,Zhang Y J and Li T 2012 Chin.Phys.B 21 067102
[11]Khan W S and Cao C 2010 J.Cryst.Growth 312 1838
[12]Yang T L,Zhang Z S,Li Y H,L¨u M S,Song S M,Wu Z H,Yan J C and Han S H 2009 Appl.Surf.Sci.255 3544
[13]Zhou X T,Heigl F,Ko J Y P,Murphy M W,Zhou J G,Regier T,Blyth R I R and Sham T K 2007 Phys.Rev.B 75 125303
[14]Lee J,Li Z,Hodgson M,Metson J,Asadov A and Gao W 2004 Curr.Appl.Phys.4 398
[15]Zhang Y J,Yan J L,Li Q S,Qu C,Zhang L Y and Xie W F 2011 Mater.Sci.Eng.B 176 846
[16]Zhang S B,Wei S H and Zunger A 2001 Phys.Rev.B 63 075205
[17]Fang Z B,Gong H X,Liu X Q,Xu D Y,Huang C M and Wang Y Y2003 Acta Phys.Sin.52 1748(in Chinese)
[18]Zhang L L,Guo C X,Chen J G and Hu J T 2005 Chin.Phys.14 586
[19]Bylander E G 1978 J.Appl.Phys.49 1188
[20]Look D C and Hemsky J W 1999 Phys.Rev.Lett.82 2552
[21]Gavryushin V,Raciukaitis G,Juodzbalis D,Kazlaulskas A and Kubertivicius V 1994 J.Cryst.Growth 138 924
[22]Ueda N,Hosono H,Waseda R and Kawazoe H 1997 Appl.Phys.Lett.70 3561
[23]Jeong I K,Park H L and Mho S I 1998 Solid State Commun.105 179
[2]Choi H W,Hong B J,Lee S K,Kim K H and Park Y S 2007 J.Lumin.126 359
[3]Zhang W W,Zhang J Y,Li Y,Chen Z Y and Wang T M 2010 Appl.Surf.Sci.256 4702
[4]Park K W,Yun Y H and Choi S C 2006 Solid State Ionics 177 1875
[5]Yi S S,Kim I W,Bae J S,Moon B K,Kim S B and Jeong J H 2002Mater.Lett.57 904
[6]Bhattacharya P,Das R R and Katiyar R S 2003 Appl.Phys.Lett.832010
[7]Bhattacharya P,Das R R and Katiyar R S 2004 Thin Solid Films 447–448 564
[8]Zhang D H,Wang Q P and Xue Z Y 2003 Acta Phys.Sin.52 1484(in Chinese)
[9]Li C,Yan J L,Zhang L Y and Zhao G 2012 Chin.Phys.B 21 127104
[10]Zhang L Y,Yan J L,Zhang Y J and Li T 2012 Chin.Phys.B 21 067102
[11]Khan W S and Cao C 2010 J.Cryst.Growth 312 1838
[12]Yang T L,Zhang Z S,Li Y H,L¨u M S,Song S M,Wu Z H,Yan J C and Han S H 2009 Appl.Surf.Sci.255 3544
[13]Zhou X T,Heigl F,Ko J Y P,Murphy M W,Zhou J G,Regier T,Blyth R I R and Sham T K 2007 Phys.Rev.B 75 125303
[14]Lee J,Li Z,Hodgson M,Metson J,Asadov A and Gao W 2004 Curr.Appl.Phys.4 398
[15]Zhang Y J,Yan J L,Li Q S,Qu C,Zhang L Y and Xie W F 2011 Mater.Sci.Eng.B 176 846
[16]Zhang S B,Wei S H and Zunger A 2001 Phys.Rev.B 63 075205
[17]Fang Z B,Gong H X,Liu X Q,Xu D Y,Huang C M and Wang Y Y2003 Acta Phys.Sin.52 1748(in Chinese)
[18]Zhang L L,Guo C X,Chen J G and Hu J T 2005 Chin.Phys.14 586
[19]Bylander E G 1978 J.Appl.Phys.49 1188
[20]Look D C and Hemsky J W 1999 Phys.Rev.Lett.82 2552
[21]Gavryushin V,Raciukaitis G,Juodzbalis D,Kazlaulskas A and Kubertivicius V 1994 J.Cryst.Growth 138 924
[22]Ueda N,Hosono H,Waseda R and Kawazoe H 1997 Appl.Phys.Lett.70 3561
[23]Jeong I K,Park H L and Mho S I 1998 Solid State Commun.105 179