0.1HoMnO_3-0.9BiFeO_3柔性铁电薄膜的制备及电学性能
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摘要
采用脉冲激光沉积技术在云母柔性衬底上沉积0.1HoMnO_3-0.9BiFeO_3薄膜,研究了薄膜的晶体结构、表面形貌、弯曲服役特性、铁电和介电性能以及输运特性。结果表明:BiFeO_3沿(012)和(104)晶面取向生长,结晶良好;薄膜表面光滑,均方根表面粗糙度为6.7nm,连续弯曲平整10 000次后表面无细微裂纹;薄膜具有良好的微观压电性,且呈现出一定的向上自发极化特性;薄膜的饱和极化强度和剩余极化强度分别为68,61μC·cm~(-2),弯曲至曲率半径为2.2mm时的极化强度变化不大,连续弯曲平整10 000次后则有所降低,平整状态和弯曲状态下的介电性能相差较小;薄膜的激活能为0.42eV,低于纯BiFeO_3薄膜的,其载流子输运能力有所增强。
Thin film of 0.1HoMnO_3-0.9BiFeO_3 was deposited on flexible mica substrate by pulsed laser deposition.The crystal structure,surface appearance,bending service characteristic,ferroelectric and dielectric properties and carriage property of the film were studied.The results show that BiFeO_3 grew along the(012)and(104)crystal planes and had good crystallization.The film presented a smooth surface with root mean square surface roughness of 6.7 nm.After continuously bending and flatting for 10 000 times,the film surface showed no microcracks.The film illustrated a good micro piezoelectricity and a certain upward spontaneous polarization.The saturated and remanent polarization of the film were 68,61μC·cm~(-2),respectively.The polarization changed little after bending to curvature radius of 2.2 mm,whereas decreased slightly after continuously bending and flatting for 10 000 times;the dielectric properties in flatting and bending states had little difference.The activation energy of the film was 0.42 eV,which was lower than that of pure BiFeO_3 film,indicating an increased carrier transport capacity.
Thin film of 0.1HoMnO_3-0.9BiFeO_3 was deposited on flexible mica substrate by pulsed laser deposition.The crystal structure,surface appearance,bending service characteristic,ferroelectric and dielectric properties and carriage property of the film were studied.The results show that BiFeO_3 grew along the(012)and(104)crystal planes and had good crystallization.The film presented a smooth surface with root mean square surface roughness of 6.7 nm.After continuously bending and flatting for 10 000 times,the film surface showed no microcracks.The film illustrated a good micro piezoelectricity and a certain upward spontaneous polarization.The saturated and remanent polarization of the film were 68,61μC·cm~(-2),respectively.The polarization changed little after bending to curvature radius of 2.2 mm,whereas decreased slightly after continuously bending and flatting for 10 000 times;the dielectric properties in flatting and bending states had little difference.The activation energy of the film was 0.42 eV,which was lower than that of pure BiFeO_3 film,indicating an increased carrier transport capacity.
引文
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[3]JU S,FACCHETTI A,XUAN Y,et al.Fabrication of fully transparent nanowire transistors for transparent and flexible electronics[J].Nature Nanotechnology,2007,2(6):378-384.
[4]TSENG H J,TIAN W C,WU W J.Flexible PZT thin film tactile sensor for biomedical monitoring[J].Sensors,2013,13(5):5478-5492.
[5]CHARLOT B,PARRAIN F,GALY N,et al.A sweeping mode integrated fingerprint sensor with 256tactile microbeams[J].Journal of Microelectromechanical Systems,2004,13(4):636-644.
[6]KANG S J,PARK Y J,BAE I,et al.Printable ferroelectric PVDF/PMMA blend films with ultralow roughness for low voltage non-volatile polymer memory[J].Advanced Functional Materials,2010,19(17):2812-2818.
[7]晏伯武.基于PVDF薄膜传感器及其应用研究[J].数字技术与应用,2014(12):107-107.
[8]NIE P X,WANG Y P,YANG Y,et al.Epitaxial growth and multiferroic properties of(001)-oriented BiFeO3-YMnO3films[J].Energy Harvesting and Systems,2015,2(3/4):157-162.
[9]DO Y H,MIN G K,JIN S K,et al.Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process[J].Sensors and Actuators A:Physical,2012,184:124-127.
[10]BAKAUL S R,SERRAO C R,LEE O,et al.High speed epitaxial perovskite memory on flexible substrates[J].Advanced Materials,2017,29(11):1605699.
[11]TOMCZK M,BRETOS I,JIMENEZ R,et al.Direct fabrication of BiFeO3 thin films on polyimide substrates for flexible electronics[J].Journal of Materials Chemistry C,2017,5(47):12529-12537.
[12]YANG Y,YAN G,YAN Z,et al.Flexible,semitransparent,and inorganic resistive memory based on BaTi0.95Co0.05O3 film[J].Advanced Materials,2017,29(26):1700425.
[13]GAO W X,YOU L,WANG Y J,et al.Flexible PbZr0.52Ti0.48O3 capacitors with giant piezoelectric response and dielectric tunability[J].Advanced Electronic Materials,2017,3(8):1600542.
[14]WANG J,NAETON J B,ZHENG H,et al.Epitaxial BiFeO3 multiferroic thin film heterostructures[J].Science,2003,299(5613):1719-1722.
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[16]LI W,WANG Y P,NIE P X,et al.Enhanced switching characteristics and piezoelectric response in epitaxial BiFeO3-TbMnO3thin films[J].Physica B:Condensed Mater,2015,466:11-15.
[17]SCHMIDT R,EERENSTEIN W,WINIECKI T,et al.Impedance spectroscopy of epitaxial multiferroic thin films[J].Physical Review B,2007,75(24):245111.