调制溅射功率对掺镓氧化锌薄膜光电性能影响
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摘要
使用射频磁控溅射法在石英衬底上制备ZnO掺Ga薄膜(GZO),通过调制不同的溅射功率制备GZO薄膜,研究了溅射功率对GZO薄膜光电学性能的影响。对不同溅射功率下的GZO薄膜进行X射线衍射、扫描电镜(SEM)、内应力、紫外可见光光谱、光致发光谱分析和电学性能分析。结果表明:随着溅射功率的提高,GZO薄膜保持良好的C轴择优取向;薄膜结晶度增加,晶界减少,晶粒尺寸增大;透光性减小;薄膜缺陷降低;薄膜表面方块电阻下降。
Ga-doped ZnO thin films(GZO) were prepared on quartz substrates by RF magnetron sputtering. The effects of sputtering power on the optical and electrical properties of GZO thin films were studied. X-ray diffraction, scanning electron microscopy(SEM), internal stress,ultraviolet and visible spectra, photoluminescence spectra and electrical properties of GZO thin films were analyzed under different sputtering power. The results show that with the increase of sputtering power, the GZO film keeps a good C-axis preferred orientation, the crystallinity of the film increases, the grain boundary decreases, the grain size increases, the transmittance decreases, the defect of the film decreases, and the square resistance of the film surface decreases.
Ga-doped ZnO thin films(GZO) were prepared on quartz substrates by RF magnetron sputtering. The effects of sputtering power on the optical and electrical properties of GZO thin films were studied. X-ray diffraction, scanning electron microscopy(SEM), internal stress,ultraviolet and visible spectra, photoluminescence spectra and electrical properties of GZO thin films were analyzed under different sputtering power. The results show that with the increase of sputtering power, the GZO film keeps a good C-axis preferred orientation, the crystallinity of the film increases, the grain boundary decreases, the grain size increases, the transmittance decreases, the defect of the film decreases, and the square resistance of the film surface decreases.
引文
[1]TSUJI T,HIROHASHI M.Influence of oxygen partial pressure on transparency and conductivity of RF sputtered Al-doped ZnOthin films[J].Applied Surface Science,2000,157(1):47-51.
[2]谭兴臣.溶胶凝胶法制备纳米氧化锌薄膜及性能分析[D].吉林大学,2006.
[3]陈义川,胡跃辉,陈俊,等.磁控溅射制备氢掺杂氧化锌薄膜的掺杂性能研究[J].功能材料,2013,(10):1497-1501.CHEN Y C,HU Y H,CHEN J,et al.Journal of Functional Materials,2013,(10):1497-1501.
[4]邓蕊.ZnO基光电薄膜的物性研究及光电器件的设计与制备[D].吉林大学,2011.
[5]徐承章,胡跃辉,陈义川,等.溅射功率对PET柔性衬底上制备ZnO:Ga薄膜的影响[J].陶瓷学报,2016,(2):152-157.XU C Z,HU Y H,CHEN Y C,et al.Journal of Ceramics,2016,(2):152-157.
[6]杨旭,陈新亮,张建军,等.缓冲层对太阳电池用ZnO:B薄膜结构及其光电性能的影响[J].光电子·激光,2012,(12):2337-2342.YANG X,CHEN X L,ZHANG J J,et al.Journal of Optoelectronics:Laser,2012,(12):2337-2342.
[7]周继承,李莉.溅射气压对ZnO透明导电薄膜光电性能的影响[J].中国有色金属学报,2009,(7):1278-1283.ZHOU J C,LI L.Chinese Journal of Nonferrous Metals,2009,(7):1278-1283.
[8]SUN Y,LIU H,ZHANG H.Effect of sputtering pressure on the properties of ZnMgO:Ti transparent conducting thin films[J].Vacuum,2013,94(18):78-80.
[9]MA Q B,YE Z Z,HE H P,et al.Structural,electrical,and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering[J].Journal of Crystal Growth,2007,304(1):64-68.
[10]楼晓波,沈鸿烈,张惠,等.ZnO薄膜的结构与光学性能研究[J].电子元件与材料,2007,(10):8-11.LOU X B,SHEN L H,ZHANG H,et al.Electronic Components&Materials,2007,(10):8-11.
[11]杨伟锋,刘著光,吕英,等.RF磁控溅射功率对ZnO:Al薄膜结构和性能的影响[J].光电子·激光,2008,19(12):1648-1652.YANG W F,LIU Z G,LV Y,et al.Journal of Optoelectronics:Laser,2008,19(12):1648-1652.
[12]刘志文,谷建峰,孙成伟,等.磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究[J].物理学报,2006,(4):1965-1973.LIU Z W,GU J F,SUN C W,et al.Acta Physica Sinica,2006,(4):1965-1973.
[13]PAREKH B B,FANCHINI G,EDA G,et al.Improved conductivity of transparent single-wall carbon nanotube thin films via stable post deposition functionalization[J].Applied Physics Letters,2007,90(12):121913-121913-3.
[14]WANG Y,ZHAO X,DUAN L,et al.Structure,luminescence and photocatalytic activity of Mg-doped ZnO nanoparticles prepared by auto combustion method[J].Materials Science in Semiconductor Processing,2015,29:372-379.
[2]谭兴臣.溶胶凝胶法制备纳米氧化锌薄膜及性能分析[D].吉林大学,2006.
[3]陈义川,胡跃辉,陈俊,等.磁控溅射制备氢掺杂氧化锌薄膜的掺杂性能研究[J].功能材料,2013,(10):1497-1501.CHEN Y C,HU Y H,CHEN J,et al.Journal of Functional Materials,2013,(10):1497-1501.
[4]邓蕊.ZnO基光电薄膜的物性研究及光电器件的设计与制备[D].吉林大学,2011.
[5]徐承章,胡跃辉,陈义川,等.溅射功率对PET柔性衬底上制备ZnO:Ga薄膜的影响[J].陶瓷学报,2016,(2):152-157.XU C Z,HU Y H,CHEN Y C,et al.Journal of Ceramics,2016,(2):152-157.
[6]杨旭,陈新亮,张建军,等.缓冲层对太阳电池用ZnO:B薄膜结构及其光电性能的影响[J].光电子·激光,2012,(12):2337-2342.YANG X,CHEN X L,ZHANG J J,et al.Journal of Optoelectronics:Laser,2012,(12):2337-2342.
[7]周继承,李莉.溅射气压对ZnO透明导电薄膜光电性能的影响[J].中国有色金属学报,2009,(7):1278-1283.ZHOU J C,LI L.Chinese Journal of Nonferrous Metals,2009,(7):1278-1283.
[8]SUN Y,LIU H,ZHANG H.Effect of sputtering pressure on the properties of ZnMgO:Ti transparent conducting thin films[J].Vacuum,2013,94(18):78-80.
[9]MA Q B,YE Z Z,HE H P,et al.Structural,electrical,and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering[J].Journal of Crystal Growth,2007,304(1):64-68.
[10]楼晓波,沈鸿烈,张惠,等.ZnO薄膜的结构与光学性能研究[J].电子元件与材料,2007,(10):8-11.LOU X B,SHEN L H,ZHANG H,et al.Electronic Components&Materials,2007,(10):8-11.
[11]杨伟锋,刘著光,吕英,等.RF磁控溅射功率对ZnO:Al薄膜结构和性能的影响[J].光电子·激光,2008,19(12):1648-1652.YANG W F,LIU Z G,LV Y,et al.Journal of Optoelectronics:Laser,2008,19(12):1648-1652.
[12]刘志文,谷建峰,孙成伟,等.磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究[J].物理学报,2006,(4):1965-1973.LIU Z W,GU J F,SUN C W,et al.Acta Physica Sinica,2006,(4):1965-1973.
[13]PAREKH B B,FANCHINI G,EDA G,et al.Improved conductivity of transparent single-wall carbon nanotube thin films via stable post deposition functionalization[J].Applied Physics Letters,2007,90(12):121913-121913-3.
[14]WANG Y,ZHAO X,DUAN L,et al.Structure,luminescence and photocatalytic activity of Mg-doped ZnO nanoparticles prepared by auto combustion method[J].Materials Science in Semiconductor Processing,2015,29:372-379.