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含硅基、芴基的空穴材料制备与结构表征
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  • 英文篇名:Preparation and Structure Characterization of Hole Materials Containing Silicon and Fluorene Groups
  • 作者:杨杰 ; 吕宏飞 ; 白雪峰 ; 吴绵园 ; 梅立鑫 ; 刘洋
  • 英文作者:YANG Jie;LV Hong-fei;BAI Xue-feng;WU Mian-yuan;MEI Li-xin;LIU Yang;Institute of Petrochemistry, Heilongjiang Academy of Sciences;
  • 关键词:空穴材料 ; 三苯基氯硅烷 ; HTFSi
  • 英文关键词:Hole material;;triphenylchlorosilane;;HTFSi
  • 中文刊名:HXYZ
  • 英文刊名:Chemistry and Adhesion
  • 机构:黑龙江省科学院石油化学研究院;
  • 出版日期:2019-07-15
  • 出版单位:化学与粘合
  • 年:2019
  • 期:v.41;No.186
  • 基金:黑龙江省科学院科学研究基金
  • 语种:中文;
  • 页:HXYZ201904013
  • 页数:3
  • CN:04
  • ISSN:23-1224/TQ
  • 分类号:52-54
摘要
以三苯基氯硅烷、对溴碘苯、对氯苯硼酸、N-(4-联苯基)-9,9-二甲基-2-氨基芴等为原料通过低温加成、Suzuki偶联及乌尔曼反应合成了含有硅、芴结构的空穴材料。在乌尔曼反应中,通过对Pd催化剂用量的考察,确定了乌尔曼反应催化剂的最低用量为千分之一当量;目标化合物通过热性质分析,确定目标化合物热分解温度为436℃;通过紫外-可见光谱分析,确定目标化合物紫外最大吸收波长为361nm,根据其最大吸收波长(361nm),由光学带隙能公式,得出目标化合物的光学带隙为3.45e V。
        A hole material containing silicon and fluorene structure is synthesized with triphenylchlorosilane,p-bromoiodobenzene,p-chlorophenylboronic acid and N-(4-biphenyl)-9,9-dimethyl-2-aminofluorene as raw materials by low temperature addition,Suzuki coupling and Ullmann reaction.In the Ullmann reaction,the minimum amount of catalyst is determined to be 0.1% equivalent by considering the amount of Pd catalyst; the thermal decomposition temperature of target compound is 436℃ which is confirmed by thermal property analysis; The U V-visible spectroscopy analysis is used to determine the maximum absorption wavelength of the target compound which is 361 nm.And according to its maximum absorption wavelength(361 nm),the optical band gap is calculated to be 3.45 eV by optical band-gap energy formula.
引文
[1]张昭,姜姗姗,马素芳,等.有机电致发光材料的研究进展[J].山西大学学报,自然科学版,2012,35(2):293~301.
    [2]DIMITRAKOPOULOS C D,MALENFANT P R L.Organic Thin Film Transistors for Large Area Electronics[J].Advanced Materials,2002,14(2):99~117.
    [3]YAGI,IWAO,NOBUKAZU HIRAI,YOSHIHIRO MIYAMOTO.A flexible full-color AMOLED display driven by OTFTs[J].Journal of the Society for Information Display,2008,16(1):15.
    [4]刘雪朋,孔凡太,陈汪超,等.有机空穴传输材料在钙钛矿太阳电池中的应用[J].物理化学学报,2016,32(6):1347~1370.
    [5]HUANG J,LI C,XIA Y J,et al.Amorphous fluorescent organic emitters for efficient solution-processed pure red electroluminescence:Synthesis,purification,morphology,solid-state photoluminescence,and device characterizations[J].Journal of organic chemistry,2007,72(22):8580~8583.
    [6]杨铭,朱润锋,赵佳星,等.有机电致发光材料8-羟基喹啉类研究进展[J].化工新型材料,2016,44(1):13~15.
    [7]马昌期,王雪松,张宝文,等.有机电致发光空穴传输材料研究进展[J].化学进展,2003,15(6):495~504.
    [8]LIU G,LI Y H,TAN W Y,et al.Alcohol-Processable Organic Amorphous Electrolytes as an Effective Electron-Injection Layer for Organic Light-Emitting Diodes[J].Chemistry-Anasian journal,2012,(9):126~2132.
    [9]TADAYYON S M,GRANDIN H M,GRIFFITHS K,et al.CuPc buffer layer role in OLED performance:a study of the interfacial band energies[J].ORGANIC ELECTRONICS,2004,5(4):157~166.
    [10]WANG L,JIANG Y,LUO J,et al.Highly Efficient and ColorStable Deep-Blue Organic Light-Emitting Diodes Based on a Solution-Processible Dendrimer[J].Advanced materials,2009,21(47):4854~4858.
    [11]ZHANG M,XUE S F,DONG W Y,et al.Highly-efficient solution-processed OLEDs based on new bipolar emitters[J].Chemical communications,2010,46(22):3923~3925.
    [12]YI Y,YI Z,QINGGUO H,et al.Solution-processable red-emission organic materials containing triphenylamine and benzothiodiazole units:synthesis and applications in organic lightemitting diodes[J].Journal of Physical Chemistry B,2009,113(22):7745~7752.
    [13]LIU F,TANG C,CHEN Q Q,et al.Pyrene functioned diarylfluorenes as efficient solution processable light emitting molecular glass[J].Organic electronics,2009,10(2):256~265.
    [14]VEINOT J,MARKS T J.Toward the ideal organic light-emitting diode.The versatility and utility of interfacial tailoring by cross-linked siloxane interlayers[J].Accounts of chemical research,2005,38(8):632~643.
    [15]徐清.含三苯胺基团有机空穴传输材料的合成与性能研究[D].浙江:浙江大学,2004,08
    [16]郭婷,梁丽,应磊,等.有机发光小分子制备及性能表征综合实验[J].实验技术与管理,2018,35(8):187~191.

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