13.56 MHz/2 MHz柱状感性耦合等离子体参数的对比研究
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摘要
通过Langmuir双探针和发射光谱诊断方法,对比研究了驱动频率为13.56 MHz和2 MHz柱状感性耦合等离子体中电子密度和电子温度的径向分布规律.结果表明:在高频和低频放电中,输入功率的增加对等离子体参数产生了不同的影响,高频放电中主要提升了电子密度,低频放电中则主要提升了电子温度.固定气压为10 Pa,分别由高频和低频驱动时,电子密度的径向分布均为"凸型".而电子温度的分布差异比较明显,高频驱动时,电子温度在腔室中心较为平坦,在边缘略有上升;低频驱动时,电子温度随径向距离的增加而逐渐下降.为了进一步分析造成这种差异的原因,在相同放电条件下采集了氩等离子体的发射光谱图,利用分支比法计算了亚稳态粒子的数密度,发现电子温度的径向分布始终与亚稳态粒子的径向分布相反.继续升高气压到100 Pa,发现不论高频还是低频放电,电子密度的径向分布均从"凸型"转变为"马鞍形",较低气压时电子密度的均匀性有了一定的提升,但低频的均匀性更好.
Inductively coupled plasmais widely used in semiconductor and display process because of its desirable characteristics such as high plasma density, simple structure and independently controllable ion energy. The driving frequency is a significant parameter that generates and maintains the plasma. However, the effects of different driving frequencies on the radial distribution of the plasma parameters are hardly investigated. So a large area cylindrical inductively coupled plasma source driven separately by 2 MHz and 13.56 MHz is investigated. In order to perform a comprehensive investigation about the effect of driving frequency, the radially resolved measurements of electron density, electron temperature and density of metastable state atoms for the argon discharge are systematically analyzed by Langmuir double probe and optical emission spectroscopy at various power values and gas pressures. It is found that input power values at high frequency(13.56 MHz) and low frequency(2 MHz) have different effects on plasma parameters. When discharge is driven at high frequency, the electron density increases obviously with the increase of power. However, when discharge is driven at low frequency, the electron temperature increases evidently with the increase of power. This can be explained by calculating the skin depths in high and low frequency discharge. When the discharge is driven at high frequency, the induced electromagnetic field is higher than that at low frequency, and the single electron obtains more energy. It is easier to ionize, so the energy is mainly used to increase the electron density. When the discharge is driven at low frequency, the skin layer is thicker, the number of heated electrons is larger, and the average energy of electrons is increased, so the energy is mainly used to raise the electron temperature. At a gas pressure of 10 Pa, the electron density shows a ‘convex' distribution and increases with the increase of input power for both the high-frequency and low-frequency discharge. While the distributions of electron temperature are obviously different. When the discharge is driven at high frequency, the electron temperature is relatively flat in the center of the chamber and slightly increases on the edge. When the discharge is driven at low frequency, the electron temperature gradually decreases along the radial position. This is due to the one-step ionization in the high-frequency discharge and the two-step ionization in the low-frequency discharge. In order to prove that the low-frequency discharge is dominated by two-step ionization, the spectral intensities of the argon plasma under the same discharge conditions are diagnosed by optical emission spectroscopy. The number density of metastable states is calculated by the branch ratio method. The results are consistent with the analyses. At a gas pressure of 100 Pa, the electron density increases and then decreases with the increase of radial distance, and the overall distribution shows a " saddle shape" for high frequency and also for low frequency discharge. Although the uniformity of electron density improves with the gas pressure, the uniformity at low frequency is better than that at high frequency. The reason can be attributed to the fact that the skin layer of low frequency is thicker and the heating area is wider.
Inductively coupled plasmais widely used in semiconductor and display process because of its desirable characteristics such as high plasma density, simple structure and independently controllable ion energy. The driving frequency is a significant parameter that generates and maintains the plasma. However, the effects of different driving frequencies on the radial distribution of the plasma parameters are hardly investigated. So a large area cylindrical inductively coupled plasma source driven separately by 2 MHz and 13.56 MHz is investigated. In order to perform a comprehensive investigation about the effect of driving frequency, the radially resolved measurements of electron density, electron temperature and density of metastable state atoms for the argon discharge are systematically analyzed by Langmuir double probe and optical emission spectroscopy at various power values and gas pressures. It is found that input power values at high frequency(13.56 MHz) and low frequency(2 MHz) have different effects on plasma parameters. When discharge is driven at high frequency, the electron density increases obviously with the increase of power. However, when discharge is driven at low frequency, the electron temperature increases evidently with the increase of power. This can be explained by calculating the skin depths in high and low frequency discharge. When the discharge is driven at high frequency, the induced electromagnetic field is higher than that at low frequency, and the single electron obtains more energy. It is easier to ionize, so the energy is mainly used to increase the electron density. When the discharge is driven at low frequency, the skin layer is thicker, the number of heated electrons is larger, and the average energy of electrons is increased, so the energy is mainly used to raise the electron temperature. At a gas pressure of 10 Pa, the electron density shows a ‘convex' distribution and increases with the increase of input power for both the high-frequency and low-frequency discharge. While the distributions of electron temperature are obviously different. When the discharge is driven at high frequency, the electron temperature is relatively flat in the center of the chamber and slightly increases on the edge. When the discharge is driven at low frequency, the electron temperature gradually decreases along the radial position. This is due to the one-step ionization in the high-frequency discharge and the two-step ionization in the low-frequency discharge. In order to prove that the low-frequency discharge is dominated by two-step ionization, the spectral intensities of the argon plasma under the same discharge conditions are diagnosed by optical emission spectroscopy. The number density of metastable states is calculated by the branch ratio method. The results are consistent with the analyses. At a gas pressure of 100 Pa, the electron density increases and then decreases with the increase of radial distance, and the overall distribution shows a " saddle shape" for high frequency and also for low frequency discharge. Although the uniformity of electron density improves with the gas pressure, the uniformity at low frequency is better than that at high frequency. The reason can be attributed to the fact that the skin layer of low frequency is thicker and the heating area is wider.
引文
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[6]Ding Z F,Yuan G Y,Gao W,Sun J C 2007 Acta Phys.Sin.57 4304(in Chinese)[丁振峰,袁国玉,高巍,孙景超2007物理学报57 4304]
[7]Gao F 2011 Ph.D.Dissertation(Dalian:Dalian University of Technology)(in Chinese)[高飞2011博士学位论文(大连:大连理工大学)]
[8]Zhao S X 2010 Ph.D.Dissertation(Dalian:Dalian University of Technology)(in Chinese)[赵书霞2011博士学位论文(大连:大连理工大学)]
[9]Godyak V A,Alexandrovich B M 2004 Phys.Plasmas 113553
[10]Lee H C,Chung C W 2015 Phys.Plasmas 22 053505
[11]Lee H C,Chung C W 2013 Phys.Plasmas 20 101607
[12]Jun H S,Chang H Y 2007 Appl.Phys.Lett.92 041501
[13]Gao F,Zhang Y R,Li H,Liu Y,Wang Y N 2017 Phys.Plasmas 24 073508
[14]Liu F,Ren C S,Wang Y N,Qi X L,Ma T C 2006 Vacuum81 221
[15]Hua Y,Song J,Hao Z Y 2018 Plasma Sci.Technol.20065402
[16]Hua Y,Song J,Hao Z Y,Zhang G L 2018 Plasma Sci.Technol.20 014005
[17]Liu Y Z 2016 M.S.Thesis(Harbin:Harbin Institute of Technology)(in Chinese)[刘耀泽2016硕士学位论文(哈尔滨:哈尔滨工业大学)]
[18]Zhang J 2006 M.S.Thesis(Dalian:Dalian University of Technology)(in Chinese)[张健2006硕士学位论文(大连:大连理工大学)]
[19]Qi X L 2008 Ph.D.Dissertation(Dalian:Dalian University of Technology)(in Chinese)[齐雪莲2008博士学位论文(大连:大连理工大学)]
[20]Daltrini A M,Moshkalev S A,Monteiro M J R,Besseler E,Kostryukov A 2007 J.Appl.Phys.101 073309
[21]Moshkalev S A,Steen P G,Gomez S,Graham W G 1999Appl.Phys.Lett.75 328
[22]Han X 2015 M.S.Thesis(Harbin:Harbin Institute of Technology)(in Chinese)[韩雪2015硕士学位论文(哈尔滨:哈尔滨工业大学)]
[23]Daltrini A M,Moshkalev S A,Morgan T J 2008 Appl.Phys.Lett.92 061504
[24]Zhu X M,Pu Y K 2010 J.Phys.D 43 015204
[25]Czerwiec T,Graves D B 2004 J.Phys.D 37 2827
[26]Liu Y 2017 M.S.Thesis(Dalian:Dalian University of Technology)(in Chinese)[刘阳2017硕士学位论文(大连:大连理工大学)]
[27]Li H,Liu Y,Zhang Y R,Gao F,Wang Y N 2017 J.Appl.Phys.121 23302
[28]Lee H C,Seo B H,Kwon D C,Kim J H,Seong D J,Oh S J,Chung C W,You K H,Shin C H 2017 Appl.Phys.Lett.110014106
[29]Lee H C 2018 Phys.Plasmas 5 011108
[30]Lee H C,Lee M H,Chung C W 2010 Appl.Phys.Lett.96041503
[31]Setsuhara Y,Tsukiyama D,Takenaka K 2008 Surface&Coatings Technology 202 5238
[2]Chabert P(translated by Wang Y N)2015 Physics of RadioFrequency Plasmas(Beijing:Science Press)pp1-15(in Chinese)[帕斯卡夏伯特著(王友年译)2015射频等离子体物理学(北京:科学出版社)第1-15页]
[3]Xu S,Ostrikov K N,Li Y,Tsakadze E L,Jones I R 2000Phys.Plasmas 45 20
[4]Saehoon U,Kyong-Ho L,Chang H Y,Chung C W 2004 Phys.Plasmas 11 4830
[5]Kim J H,Hwang H J,Kim D H,Cho J H,Chung C W 2015J.Appl.Phys.117 153302
[6]Ding Z F,Yuan G Y,Gao W,Sun J C 2007 Acta Phys.Sin.57 4304(in Chinese)[丁振峰,袁国玉,高巍,孙景超2007物理学报57 4304]
[7]Gao F 2011 Ph.D.Dissertation(Dalian:Dalian University of Technology)(in Chinese)[高飞2011博士学位论文(大连:大连理工大学)]
[8]Zhao S X 2010 Ph.D.Dissertation(Dalian:Dalian University of Technology)(in Chinese)[赵书霞2011博士学位论文(大连:大连理工大学)]
[9]Godyak V A,Alexandrovich B M 2004 Phys.Plasmas 113553
[10]Lee H C,Chung C W 2015 Phys.Plasmas 22 053505
[11]Lee H C,Chung C W 2013 Phys.Plasmas 20 101607
[12]Jun H S,Chang H Y 2007 Appl.Phys.Lett.92 041501
[13]Gao F,Zhang Y R,Li H,Liu Y,Wang Y N 2017 Phys.Plasmas 24 073508
[14]Liu F,Ren C S,Wang Y N,Qi X L,Ma T C 2006 Vacuum81 221
[15]Hua Y,Song J,Hao Z Y 2018 Plasma Sci.Technol.20065402
[16]Hua Y,Song J,Hao Z Y,Zhang G L 2018 Plasma Sci.Technol.20 014005
[17]Liu Y Z 2016 M.S.Thesis(Harbin:Harbin Institute of Technology)(in Chinese)[刘耀泽2016硕士学位论文(哈尔滨:哈尔滨工业大学)]
[18]Zhang J 2006 M.S.Thesis(Dalian:Dalian University of Technology)(in Chinese)[张健2006硕士学位论文(大连:大连理工大学)]
[19]Qi X L 2008 Ph.D.Dissertation(Dalian:Dalian University of Technology)(in Chinese)[齐雪莲2008博士学位论文(大连:大连理工大学)]
[20]Daltrini A M,Moshkalev S A,Monteiro M J R,Besseler E,Kostryukov A 2007 J.Appl.Phys.101 073309
[21]Moshkalev S A,Steen P G,Gomez S,Graham W G 1999Appl.Phys.Lett.75 328
[22]Han X 2015 M.S.Thesis(Harbin:Harbin Institute of Technology)(in Chinese)[韩雪2015硕士学位论文(哈尔滨:哈尔滨工业大学)]
[23]Daltrini A M,Moshkalev S A,Morgan T J 2008 Appl.Phys.Lett.92 061504
[24]Zhu X M,Pu Y K 2010 J.Phys.D 43 015204
[25]Czerwiec T,Graves D B 2004 J.Phys.D 37 2827
[26]Liu Y 2017 M.S.Thesis(Dalian:Dalian University of Technology)(in Chinese)[刘阳2017硕士学位论文(大连:大连理工大学)]
[27]Li H,Liu Y,Zhang Y R,Gao F,Wang Y N 2017 J.Appl.Phys.121 23302
[28]Lee H C,Seo B H,Kwon D C,Kim J H,Seong D J,Oh S J,Chung C W,You K H,Shin C H 2017 Appl.Phys.Lett.110014106
[29]Lee H C 2018 Phys.Plasmas 5 011108
[30]Lee H C,Lee M H,Chung C W 2010 Appl.Phys.Lett.96041503
[31]Setsuhara Y,Tsukiyama D,Takenaka K 2008 Surface&Coatings Technology 202 5238