Sb_2(SSe)_3薄膜的两步法制备及其在太阳电池中的应用
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摘要
本文首先采用磁控溅射工艺在FTO衬底上沉积Sb_2S_3薄膜,然后通过Se化处理工艺制备Sb_2(SSe)_3薄膜.利用X射线衍射、扫描电子显微镜及紫外-可见分光光度计对薄膜的结构及光学性能进行了分析.在此基础上,初步制备了上衬底结构的太阳电池器件并对其性能进行了测试.结果表明,随着Se化温度的提高,所制备的Sb_2(SSe)_3薄膜晶粒逐渐变大,同时光学带隙逐渐降低.这主要是由于在Se化过程中,Se原子替代Sb_2S_3中S原子的位置所造成的.所制备的太阳电池器件开路电压达到了469.3mV,二极管理想因子为2.6,反向饱和电流为3.389×10~(-8)A.
paper,the Sb_2S_3 thin films were selenized to obtain Sb_2(SSe)_3 films. The films were characterized by X-ray diffraction(XRD),with the selenization temperature increasing, the grain size of the Sb_2(SSe)_3 films was gradually enlarged, and the band-gap gradually decreased. This is mainly attributed to the fact that the S atoms were partial substituted by Se atoms during the selenization process. The solar cell device prepared based on the fabricated Sb_2(SSe)_3 films shows an open circuit voltage of 469.3 mV, ideal factor of 2.6 and reverse saturation current of 3.389×10~(-8)A.
paper,the Sb_2S_3 thin films were selenized to obtain Sb_2(SSe)_3 films. The films were characterized by X-ray diffraction(XRD),with the selenization temperature increasing, the grain size of the Sb_2(SSe)_3 films was gradually enlarged, and the band-gap gradually decreased. This is mainly attributed to the fact that the S atoms were partial substituted by Se atoms during the selenization process. The solar cell device prepared based on the fabricated Sb_2(SSe)_3 films shows an open circuit voltage of 469.3 mV, ideal factor of 2.6 and reverse saturation current of 3.389×10~(-8)A.
引文
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[2]WANG P H,THEURING M,VEHSE M,et al.Light trapping in a-Si:H thin film solar cells using silver nanostructures[J].AIP Adv,2017,7:015019.
[3]THEELEN M,HANS V,BARREAU N,et al.The impact of alkali elements on the degradation of CIGS solar cells[J].Prog Photovoltaics,2015,23:537-545.
[4]FRAGA D,BARRACHINA E,CALVET I,et al.Developing CIGS solar cells on glass-ceramic substrates[J].Mater Lett,2018,221:104-106.
[5]SWANSON D E,SITSS J R,SAMPATH W S.Co-sublimation of Cd SexTe1-x layers for Cd Te solar cells[J].Sol Energy Mater Sol Cells,2017,159:389-394.
[6]RIMMAUDO I,SALAVEI A,ARTEGIANI E,et al.Improved stability of Cd Te solar cells by absorber surface etching[J].Sol Energy Mater Sol Cells,2017,162:127-133.
[7]QIU L,LIU Z,ONO L K,et al.Scalable Fabrication of Stable High Efficiency Perovskite Solar Cells and Modules Utilizing Room Temperature Sputtered Sn O2 Electron Transport Layer[J/OL].Adv Funct Mater,2018.https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201806779.DOI:10.1002/adfm.201806779.
[8]AZAM M,YUE S,LIU K,et al.Insights on the correlation of precursor solution,morphology of the active layer and performance of the pervoskite solar cells[J].J Alloys Compd,2018,731:375-380.
[9]GR?TZEL M.The Rise of Highly Efficient and Stable Perovskite Solar Cells[J].Acc Chem Res,2017,50:487-491.
[10]LIU H,FU W,ZONG B,et al.A high stability,hole-conductor-free mixed organic cationpervoskite solar cells based on carbon counter electrode[J].Electrochem Acta,2018,266:78-85.
[11]ESCORCIA-GARCíA J,BECERRA D,NAIR M T S,et al.Heterojunction Cd S/Sb2S3 solar cells using antimony sulfide thinfilmsprepared by thermal evaporation[J].Thin Solid Films,2014,569:28-34.
[12]ENGLMAN T,TERKIELTAUB E,ETGAR L.High Open Circuit Voltage in Sb2S3/Metal Oxide-Based Solar Cells[J].JPhys Chem C,2015,119:12904-12909.
[13]ZHOU Y,WANG L,CHEN S,et al.Thin-film Sb2Se3 photovoltaics with orientedone-dimensional ribbons and benigngrain boundaries[J].Nat Photonics,2015,9:409-415.
[14]CHEN C,ZHAO Y,LU S,et al.Accelerated Optimization of Ti O2/Sb2Se3 Thin Film Solar Cells by High-Throughput Combinatorial Approach[J].Adv Energy Mater,2017,7:1700866.
[15]WANG L,LI D B,LI K,et al.Stable 6%-efficient Sb2Se3 solar cells with a Zn O buffer layer[J].Nat Energy,2017,2:17046.
[16]CHEN C,LI K,CHEN S,et al.Efficiency Improvement of Sb2Se3 Solar Cell via Grain Boundary Inversion[J].ACS Energy Lett,2018,3:2335-2341.
[17]LU T,GU H,GE Z,et al.Studies on structural,optical and photoelectric properties of Cd S1-xSex films fabricated by selenization of chemical bath deposited Cd Sfilms[J].Phys Status Solidi A,2017,214:1600664.
[18]THORNTON J A.High rate thick film growth[J].Ann Rev Mat Sci,1977,7:239-260.
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