质子对碲锌镉辐照损伤的SRIM模拟
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摘要
模拟计算质子对CdZnTe的辐照损伤.先计算质子在CdZnTe中的电离损伤和位移损伤,再计算不同能量和入射角的质子辐照CdZnTe产生的空位数,最后计算不同能量和入射角的质子辐照不同厚度CdZnTe靶的溅射产额.结果表明:电离损伤远大于位移损伤;CdZnTe内因质子辐照产生的空位数随质子能量的增大而增加,当质子入射角大于60°时,产生的空位数明显减少;CdZnTe低于半导体硅和金刚石的抗辐照性能;溅射产额与空位数相差较大,溅射产额随质子能量的增大先增大后减小,随质子入射角的增大而增大,随CdZnTe靶厚度的增大整体趋于增大.
We simulated and calculated the radiation damage by proton in CdZnTe.Firstly,the ionization damage and displacement damage for protons in CdZnTe were calculated.Secondly,the number of vacancies generated by protons radiation at different energy and incident angles in CdZnTe were calculated.Finally,sputtering yields generated by protons radiation at different energy and incident angles in CdZnTe target with different thicknesses were calculated.The results show that ionization damage is much greater than displacement damage;the number of vacancies generated by proton radiation in CdZnTe increases with the increase of proton energy,and the number of vacancies decreases quickly when the incident angles of protons are greater than 60°.CdZnTe is lower than radiation resistance of silicon and diamond semiconductor materials.The sputtering yield is much lower than the number of vacancies in CdZnTe,sputtering yield increases first and then decreases with the increase of proton energy,and increases with the increase of incident angles of protons.The overall trend of sputtering yield increases with the increase of thickness of CdZnTe target.
We simulated and calculated the radiation damage by proton in CdZnTe.Firstly,the ionization damage and displacement damage for protons in CdZnTe were calculated.Secondly,the number of vacancies generated by protons radiation at different energy and incident angles in CdZnTe were calculated.Finally,sputtering yields generated by protons radiation at different energy and incident angles in CdZnTe target with different thicknesses were calculated.The results show that ionization damage is much greater than displacement damage;the number of vacancies generated by proton radiation in CdZnTe increases with the increase of proton energy,and the number of vacancies decreases quickly when the incident angles of protons are greater than 60°.CdZnTe is lower than radiation resistance of silicon and diamond semiconductor materials.The sputtering yield is much lower than the number of vacancies in CdZnTe,sputtering yield increases first and then decreases with the increase of proton energy,and increases with the increase of incident angles of protons.The overall trend of sputtering yield increases with the increase of thickness of CdZnTe target.
引文
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[3]Wunderer C B,Ballmoons P V,Barriere N,et al.Gamma-Ray Lenses for Astrophysics—and the Gamma-Ray Imager Mission GRI[J].IEEE Transactions on Nuclear Science,2009,56(3):1242-1249.
[4]Koglin J E,Madsen K K,Jensen C P,et al.NuSTAR Hard X-Ray Optics[C]//Proceedings of the International Society for Optical Engineering.Bellingham:SIPE,2005:371-378.
[5]Owens A,Brandenburg S,Gostilo V,et al.Assessment of the Radiation Tolerance of CdZnTe and HgI2to Solar Proton Events[J].IEEE Transactions on Nuclear Science,2009,56(3):771-776.
[6]黄本诚,童靖宇.空间环境工程学[M].北京:中国宇航出版社,1993:147-157.(HUANG Bencheng,TONG Jingyu.Space Environment Engineering[M].Beijing:Chinese Astronautic Publishing House,1993:147-157.)
[7]王旭东,程远,孟惠民,等.氧化锌质子辐照效应的SRIM模拟研究[J].武汉科技大学学报,2010,33(2):151-154.(WANG Xudong,CHENG Yuan,MENG Huimin,et al.A Simulation Study of the Proton Radiation Effects in ZnO by SRIM[J].Journal of Wuhan University of Science and Technology,2010,33(2):151-154.)
[8]李阳,李雄耀,王世杰,等.月球顽辉石质子注入的SRIM模拟[J].矿物岩石地球化学通报,2014,33(1):71-76.(LI Yang,LI Xiongyao,WANG Shijie,et al.SRIM Simulation of Proton's Role in the Radiation of Lunar Enstatite[J].Bulletin of Mineralogy,Petrology and Geochemistry,2014,33(1):71-76.)
[9]张宁,张鑫,杨爱香,等.质子束辐照单层石墨烯的损伤效应[J].物理学报,2017,66(2):293-297.(ZHANG Ning,ZHANG Xin,YANG Aixiang,et al.Damage Effects of Proton Beam Irradiation on Single Layer Graphene[J].Acta Physica Sinica,2017,66(2):293-297.)
[10]郑贤利,刘敏,夏艳芳,等.带电粒子注入硅的辐照损伤模拟研究[J].功能材料,2016,47(增刊1):164-168.(ZHENG Xianli,LIU Min,XIA Yanfang,et al.Study on Simulation of Radiation Damage of the Charged Particles Implanted Silicon[J].Journal of Functional Materials,2016,47(Suppl 1):164-168.)
[11]王玺.碲锌镉像素核辐射探测器原理及实验特性研究[D].重庆:重庆大学,2013.(WANG Xi.Principle and Experimental Characteristics of Pixellated CdZnTe Detector for Nuclear Radiation[D].Chongqing:Chongqing University,2013.)
[12]Kudriavtsev Y,Villegas A,Godines A,et al.Calculation of the Surface Binding Energy for Ion Sputtered Particles[J].Applied Surface Science,2005,239(3/4):273-278.
[13]朱勇,李宝华,谢国峰.质子对BaTiO3薄膜辐照损伤的计算机模拟[J].物理学报,2012,61(4):1211-1215.(ZHU Yong,LI Baohua,XIE Guofeng.Investigation of Proton Irradiation Damage in BaTiO3 Thin Film by Computer Simulation[J].Acta Physica Sinica,2012,61(4):1211-1215.)
[14]Bryant B J,Cox A F J,Webster E.Atomic Displacements and the Nature of Band Edge Radiative Emission in Cadmium Telluride[J].Journal of Physics C:Solid State Physics,1968,1(6):1737-1745.
[15]Meese J M.Zn Displacement Threshold in ZnTe[J].Applied Physics Letters,1971,19(4):86-87.