摘要
以溶胶-凝胶法制备Al掺杂的ZnO(AZO)薄膜。为了提高薄膜的结晶性,在氩气气氛中将所制备的薄膜分别在400℃、500℃和550℃温度下退火处理,研究不同退火温度对薄膜样品形貌和性能的影响。结果表明,所制备的AZO薄膜为六角纤锌矿结构,有很明显的c轴择优取向;随着退火温度增加,薄膜的结晶性与电导率均先增加后减小,其在可见光区域的平均透过率约为85%。当退火温度为500℃时,制备的AZO薄膜性能最佳,其品质因素可以达到2 051.04Ω~(-1)·cm~(-1)。
Al doped ZnO (AZO) thin films were prepared by sol-gel method. In order to improve the crystallinity of prepared thin films,the thin films were annealed under argon atmosphere at 400 ℃,500 ℃ and 550 ℃,respectively. Then,the effects of annealing temperature on the morphologies and properties of the AZO thin films were investigated. The results showed that the thin films with hexagonal wurtzite-structured grains,exhibited highly c-axis preferred orientation. With the increase of annealing temperature,the crystallinity and conductivity of the films increased firstly and then decreased. The average transmittance was found to be about 85% in the visible region. When the annealing temperature was 500 ℃,the performance of the AZO film was the best,and the figue of merit could reach 2 051.04 Ω~(-1)·cm~(-1).
引文
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