低频脉冲磁场作用下计算机效应的试验研究
|
摘要
低频脉冲磁场是一种常见电磁干扰源,可以在雷电放电、地面核爆炸及生产生活等多种活动中产生,具有低频、低阻和时变等多重特性,可通过直接穿透和磁电感应作用于计算机系统上,对其产生干扰或毁伤.为确定低频脉冲磁场对计算机系统的效应规律,文章利用螺线管脉冲磁场模拟装置,开展了低频脉冲磁场作用下联想品牌计算机(包括2款台式机和一款笔记本)效应的试验研究,得到了扰乱阈值和效应规律,分析了磁场特征参数与效应现象的关系,并与相关研究成果进行了对比.其中脉冲磁场上升时间在数μs至数百μs之间,磁感应强度最大约70 mT.研究结果符合理论预期,并与现有成果逻辑关系一致,可为计算机系统及相近设备的低频脉冲磁场防护提供参考和依据.
The low-frequency pulsed magnetic field is a common source of electromagnetic interference, which can be generated in various activities, such as lightning discharge, ground nuclear explosion and production and life. It has multiple characteristics, such as low frequency, low resistance and time variation, so it can be applied to computer systems through direct penetration and magnetoelectric induction, and creates interference or damage. In order to determine the effect law of low-frequency pulsed magnetic field on computer system, the effect experiment of low-frequency pulsed magnetic field on the Lenovo brand computers(2 desktop models and 1 notebook model) were carried with solenoid pulsed magnetic field simulation device, among which, the pulsed magnetic field rise time is between several and hundreds of microseconds, and the maximum magnetic induction intensity is about 70 mT. Through the work, the disturbance threshold and effect law are obtained, the relationship between effect phenomenon and characteristic parameters of magnetic field is analyzed, and the results are in accordance with the theoretical expectation and the logical relationship of the existing results. It can provide reference and basis for the protection of low-frequency pulsed magnetic field in computer systems and similar equipments.
The low-frequency pulsed magnetic field is a common source of electromagnetic interference, which can be generated in various activities, such as lightning discharge, ground nuclear explosion and production and life. It has multiple characteristics, such as low frequency, low resistance and time variation, so it can be applied to computer systems through direct penetration and magnetoelectric induction, and creates interference or damage. In order to determine the effect law of low-frequency pulsed magnetic field on computer system, the effect experiment of low-frequency pulsed magnetic field on the Lenovo brand computers(2 desktop models and 1 notebook model) were carried with solenoid pulsed magnetic field simulation device, among which, the pulsed magnetic field rise time is between several and hundreds of microseconds, and the maximum magnetic induction intensity is about 70 mT. Through the work, the disturbance threshold and effect law are obtained, the relationship between effect phenomenon and characteristic parameters of magnetic field is analyzed, and the results are in accordance with the theoretical expectation and the logical relationship of the existing results. It can provide reference and basis for the protection of low-frequency pulsed magnetic field in computer systems and similar equipments.
引文
[1] 曾继来.计算机的高功率微波效应研究[D].长沙:国防科技大学,2007.ZENG J L.High power microwave effects on the computers and their networks[D].Changsha:National University of Defense Technology,2007.(in Chinese)
[2] 李平.HPM辐照动态计算机扰乱效应研究[J].试验与研究,2000,23(1):21-24.LI P.Research on disturbance effect of HPM irradiating to dynamic computer[J].Research and experiment,2000,23(1):21-24.(in Chinese)
[3] 姜治北.高功率微波作用下的计算机系统失效机理研究[D].成都:电子科技大学,2006.JIANG Z B.Research on failure mechanism of computer system under high power microwave[D].Chengdu:University of Electronics Science & Technology of China,2006.(in Chinese)
[4] 杨杰,李跃波,闫民华,等.L波段高功率微波对计算机的损伤效应试验研究[J].微波学报,2018,34(2):80-85.YANG J,LI Y B,YANG M H,et al.Experiment Research on damage effects of L-band high power microwave to computer equipments[J].Journal of radio science,2018,34(2):80-85.(in Chinese)
[5] 郭艳辉,李子森,杨宝山,等.国外计算机强电磁脉冲敏感度实验结果的研究[J].安全与电磁兼容,2014(3):67-70.GUO Y H,LI Z S,YANG B S,et al.Study of results on computer system HPEM susceptibility researched abroad[J].Safety & EMC,2014(3):67-70.(in Chinese)
[6] 周璧华,陈彬,石立华.电磁脉冲及其工程防护[M].1版.北京:国防工业出版社,2003.
[7] 高成,周璧华,石立华,等.微型计算机在脉冲磁场作用下的效应试验[J].强激光与粒子束,2004,16(2):205-208.GAO C,ZHOU B H,SHI L H,et al.Effects of pulsed magnetic field on personal computers[J].High power laser and particle beams,2004,16(2):205-208.(in Chinese)
[8] 张国宾.强磁场对典型电子器件影响机理的研究[D].兰州:兰州大学,2011.ZHANG G B,Investigation of the influence of intense magnetic field on electric device[D].Lanzhou:Lanzhou University,2011.(in Chinese)
[9] 许献国.U盘存储器电磁脉冲效应[C]//绵阳:第九届全国抗辐射电子学与电磁脉冲学术年会论文集,2007.
[10] 何丽娟.静电放电电磁脉冲的电磁干扰分析[D].北京:华北电力大学,2010.HE L J.The analysis of electromagnetic interference for electrostatic discharge electromagnetic pulse[D].Beijing:North China Electric Power University,2010.(in Chinese)
[11] 杨克俊.电磁兼容原理与设计技术[M].北京:人民邮电出版社,2004.
[12] 杨强,高成,宋双,等.低频磁场的屏蔽分析[C]//成都:第22届全国电磁兼容学术会议论文集,2012.
[13] 高成,朱翼超,石立华,等.对近区低频磁场的屏蔽设计研究[C]//广州:第17届全国电磁兼容学术会议论文集,2007.
[2] 李平.HPM辐照动态计算机扰乱效应研究[J].试验与研究,2000,23(1):21-24.LI P.Research on disturbance effect of HPM irradiating to dynamic computer[J].Research and experiment,2000,23(1):21-24.(in Chinese)
[3] 姜治北.高功率微波作用下的计算机系统失效机理研究[D].成都:电子科技大学,2006.JIANG Z B.Research on failure mechanism of computer system under high power microwave[D].Chengdu:University of Electronics Science & Technology of China,2006.(in Chinese)
[4] 杨杰,李跃波,闫民华,等.L波段高功率微波对计算机的损伤效应试验研究[J].微波学报,2018,34(2):80-85.YANG J,LI Y B,YANG M H,et al.Experiment Research on damage effects of L-band high power microwave to computer equipments[J].Journal of radio science,2018,34(2):80-85.(in Chinese)
[5] 郭艳辉,李子森,杨宝山,等.国外计算机强电磁脉冲敏感度实验结果的研究[J].安全与电磁兼容,2014(3):67-70.GUO Y H,LI Z S,YANG B S,et al.Study of results on computer system HPEM susceptibility researched abroad[J].Safety & EMC,2014(3):67-70.(in Chinese)
[6] 周璧华,陈彬,石立华.电磁脉冲及其工程防护[M].1版.北京:国防工业出版社,2003.
[7] 高成,周璧华,石立华,等.微型计算机在脉冲磁场作用下的效应试验[J].强激光与粒子束,2004,16(2):205-208.GAO C,ZHOU B H,SHI L H,et al.Effects of pulsed magnetic field on personal computers[J].High power laser and particle beams,2004,16(2):205-208.(in Chinese)
[8] 张国宾.强磁场对典型电子器件影响机理的研究[D].兰州:兰州大学,2011.ZHANG G B,Investigation of the influence of intense magnetic field on electric device[D].Lanzhou:Lanzhou University,2011.(in Chinese)
[9] 许献国.U盘存储器电磁脉冲效应[C]//绵阳:第九届全国抗辐射电子学与电磁脉冲学术年会论文集,2007.
[10] 何丽娟.静电放电电磁脉冲的电磁干扰分析[D].北京:华北电力大学,2010.HE L J.The analysis of electromagnetic interference for electrostatic discharge electromagnetic pulse[D].Beijing:North China Electric Power University,2010.(in Chinese)
[11] 杨克俊.电磁兼容原理与设计技术[M].北京:人民邮电出版社,2004.
[12] 杨强,高成,宋双,等.低频磁场的屏蔽分析[C]//成都:第22届全国电磁兼容学术会议论文集,2012.
[13] 高成,朱翼超,石立华,等.对近区低频磁场的屏蔽设计研究[C]//广州:第17届全国电磁兼容学术会议论文集,2007.