IGBT模块结温变化下的电磁干扰特性研究
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摘要
绝缘栅双极型晶体管(IGBT)是电力变换装置中的重要器件,评估其可靠性至关重要。IGBT的结温及结温波动是造成其失效的主要原因,如何判定结温波动成为一个研究难点。通过分析IGBT的结构与结温特性、结温机理和结温波动对开关过程的影响及开关波形的频域模型,可以得出结温升高会导致IGBT模块工作过程中产生的电磁干扰变小,然后通过实验验证。实验测试结果表明,基于电磁干扰强度的结温估计或结温波动估计方法切实可行。
Insulated gate bipolar transistor(IGBT) is a power conversion device is an important component to assess the reliability is essential.IGBT junction temperature and junction temperature fluctuations is the main reason for the failure, how to determine the junction temperature fluctuations become a research difficult.By analyzing the IGBT structure and junction temperature characteristics,junction temperature mechanism and junction temperature fluctuations on the switching process and the switching waveform of the frequency domain model,it can be concluded that the increase in junction temperature IGBT module will result in smaller electromagnetic interference, then through experimental verification.The experimental results show that it is feasible to estimate the junction temperature or junction temperature fluctuations the based on the intensity of electromagnetic interference.
Insulated gate bipolar transistor(IGBT) is a power conversion device is an important component to assess the reliability is essential.IGBT junction temperature and junction temperature fluctuations is the main reason for the failure, how to determine the junction temperature fluctuations become a research difficult.By analyzing the IGBT structure and junction temperature characteristics,junction temperature mechanism and junction temperature fluctuations on the switching process and the switching waveform of the frequency domain model,it can be concluded that the increase in junction temperature IGBT module will result in smaller electromagnetic interference, then through experimental verification.The experimental results show that it is feasible to estimate the junction temperature or junction temperature fluctuations the based on the intensity of electromagnetic interference.
引文
[1]张狄林.IGBT电气参数的温度特性分析[J].计算机与数字工程,2013,41(6):999-1001.
[2]孟进,马伟明.基于IGBT开关暂态过程建模的功率变流器电磁干扰频谱估计[J].中国电机工程学报,2005,25(20), 16-20.
[3] Kuhn H.Mertens A. On-line Junction Temperature Sensitive Electrical Parameters[A]. 13 th European Conference on Power Electronics and Applications[C].2009:1-10.
[4] Costa F,Magnon D.Graphical Analysis of the Spectra of EMI Sources in Power Electronics[J].IEEE Trans. on Power Electronics,2005,2(6):1491-1498.
[2]孟进,马伟明.基于IGBT开关暂态过程建模的功率变流器电磁干扰频谱估计[J].中国电机工程学报,2005,25(20), 16-20.
[3] Kuhn H.Mertens A. On-line Junction Temperature Sensitive Electrical Parameters[A]. 13 th European Conference on Power Electronics and Applications[C].2009:1-10.
[4] Costa F,Magnon D.Graphical Analysis of the Spectra of EMI Sources in Power Electronics[J].IEEE Trans. on Power Electronics,2005,2(6):1491-1498.