基于Pcap01的MEMS电容压力传感器测量电路设计
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摘要
基于TDC原理文中提出了一种用于MEMS电容式压力传感器的微弱电容测量电路。该电路以微处理器STM32F103为控制核心,通过SPI总线对Pcap01芯片进行时序控制,完成电容数据的采集、分析、处理和显示。该电路具有体积小、抗干扰性强、分辨率高和刷新频率高的特点。通过对10 pF以下的固定电容和MEMS电容式压力传感器测量验证新电路的性能。实验结果表明,电路在10 Hz刷新频率下有效精度位为16位,分辨率可达61 aF。
Based on the principle of TDC, a weak capacitance measurement circuit for MEMS capacitive pressure sensors was proposed in this paper. Taking STM32 F103 as the main controller, the circuit conducted the timing control of Pcap01 through SP1 bus to complete the collection, analysis, processing and display of the capacitance data. The circuit had the characteristics including small volume, strong anti-interference ability, high resolution and high update rate. Measurements of static capacitance below 10 pF and MEMS capacitive pressure sensor showed that the circuit had a good performance with resolution of 61 aF and 16 bits of effective precision at a refresh rate of 10 Hz.
Based on the principle of TDC, a weak capacitance measurement circuit for MEMS capacitive pressure sensors was proposed in this paper. Taking STM32 F103 as the main controller, the circuit conducted the timing control of Pcap01 through SP1 bus to complete the collection, analysis, processing and display of the capacitance data. The circuit had the characteristics including small volume, strong anti-interference ability, high resolution and high update rate. Measurements of static capacitance below 10 pF and MEMS capacitive pressure sensor showed that the circuit had a good performance with resolution of 61 aF and 16 bits of effective precision at a refresh rate of 10 Hz.
引文
[1]刘圣亚.基于MEMS技术的电容式压力传感器的研究[D].北京:北京大学,2013.Liu Shengya.Research on capacitive pressure sensor based on MEMS technology[D].Beijing:Peking University,2013.
[2]黄雨濛,戚昊琛,胡智文,等.MEMS电容式压力传感器检测电路比较研究[J].电子科技,2015,28(1):186-189.Huang Yumeng,Qi Haochen,Hu Zhiwen,et al.Comparison of detection circuits for MEMS capacitive pressure sensors[J].Electronic Science and Technology,2015,28(1):186-189.
[3]张瑞.小量程MEMS电容式压力传感器设计与工艺研究[D].太原:中北大学,2016.Zhang Rui.Design and technology of MEMS capacitive pressure sensor[D].Taiyuan:North Central University,2016.
[4]刘晓为,陈伟平.MEMS传感器接口ASIC集成技术[M].北京:国防工业出版社,2013.Liu Xiaowen,Chen Weiping.ASIC technology of MEMS sensor interface[M].Beijing:National Defense Industry Press,2013.
[5]郑雨薇,朱蕴璞.基于MS3110的微电容读出电路设计[J].机械制造与自动化,2017,46(2):174-176.Zheng Yuwei,Zhu Yunpu.Design of micro capacitance readout circuit based on MS3110[J].Mechanical Manufacturing and Automation,2017,46(2):174-176.
[6]邓丽莉,桑胜波,张文栋,等.基于Pcap01芯片的高精度微电容检测系统设计[J].传感技术学报,2013(8):1045-1049.Deng Lili,Sang Shengbo,Zhang Wendong,et al.Design of high precision micro capacitance detection system based on Pcap01 chip[J].Sensing Technology Journal,2013(8):1045-1049.
[7]Chen B,Hu Xiaobing,Sun H.Design of capacitive differential pressure sensor based on AD7745[J].Transducer&Microsystem Technologies,2011,30(6):71-69.
[8]潘湖迪,陈大果,李梦,等.高精度微弱电容检测系统的设计与实现[J].仪表技术,2013(8):44-47.Pan Hudi,Chen Daguo,Li Meng,et al.Design and implementation of high precision and weak capacitance detection system[J].Instrument Technology,2013(8):44-47.
[9]Yu H J,Ding Z Q,He X P,et al.The research on MEMS micro capacitance sensor detection based on MS3110[J].Key Engineering Materials,2015,64(5):528-532.
[10]Zhou Y G,Tong L I,Hua Y.Micro-capacitance measurement system based on CDC technology[J].Journal of Shenyang University of Technology,2015(7):58-62.
[11]■ika D,Martinovi■ T,D■apo H.Measurement system for object detection based on multielectrode capacitive sensor[C].Opatija:International Convention on Information and Communication Technology,Electronics and Microelectronics,IEEE,2015.
[12]刘浪,马铁华,李新娥.基于TDC的微小电容测量电路的设计[J].电子技术应用,2010,36(1):71-74.Liu Lang,Ma Tiehua,Li Xine.Design of micro capacitance measurement circuit based on TDC[J].Electronic Technology Application,2010,36(1):71-74.
[13]夏吉,杨业汕,陈兴.基于Pcap01的电容式液位传感器系统设计[J].电子科技,2014,27(10):55-58.Xia Ji,Yang Yeshan,Chen Xing.Design of capacitive liquid level sensor system based on Pcap01[J].Electronic Science and Technology,2014,27(10):55-58.
[14]Deng L,Sang S,Zhang W,et al.Design of high-precision micro-capacitance detection system based on Pcap01[J].Chinese Journal of Sensors&Actuators,2013,26(8):1045-1049.
[15]熊丽霞.微弱电容传感信号读取电路技术研究[D].成都:电子科技大学,2013.Xiong Lixia.Study on the technology of reading circuit for weak capacitance sensing signal[D].Chengdu:University of Electronic Technology of China,2013.
[16]Wang Y,Chodavarapu V P.Differential wide temperature range CMOS interface circuit for capacitive MEMS pressure sensors[J].Sensors,2015,15(2):4253-4263.
[2]黄雨濛,戚昊琛,胡智文,等.MEMS电容式压力传感器检测电路比较研究[J].电子科技,2015,28(1):186-189.Huang Yumeng,Qi Haochen,Hu Zhiwen,et al.Comparison of detection circuits for MEMS capacitive pressure sensors[J].Electronic Science and Technology,2015,28(1):186-189.
[3]张瑞.小量程MEMS电容式压力传感器设计与工艺研究[D].太原:中北大学,2016.Zhang Rui.Design and technology of MEMS capacitive pressure sensor[D].Taiyuan:North Central University,2016.
[4]刘晓为,陈伟平.MEMS传感器接口ASIC集成技术[M].北京:国防工业出版社,2013.Liu Xiaowen,Chen Weiping.ASIC technology of MEMS sensor interface[M].Beijing:National Defense Industry Press,2013.
[5]郑雨薇,朱蕴璞.基于MS3110的微电容读出电路设计[J].机械制造与自动化,2017,46(2):174-176.Zheng Yuwei,Zhu Yunpu.Design of micro capacitance readout circuit based on MS3110[J].Mechanical Manufacturing and Automation,2017,46(2):174-176.
[6]邓丽莉,桑胜波,张文栋,等.基于Pcap01芯片的高精度微电容检测系统设计[J].传感技术学报,2013(8):1045-1049.Deng Lili,Sang Shengbo,Zhang Wendong,et al.Design of high precision micro capacitance detection system based on Pcap01 chip[J].Sensing Technology Journal,2013(8):1045-1049.
[7]Chen B,Hu Xiaobing,Sun H.Design of capacitive differential pressure sensor based on AD7745[J].Transducer&Microsystem Technologies,2011,30(6):71-69.
[8]潘湖迪,陈大果,李梦,等.高精度微弱电容检测系统的设计与实现[J].仪表技术,2013(8):44-47.Pan Hudi,Chen Daguo,Li Meng,et al.Design and implementation of high precision and weak capacitance detection system[J].Instrument Technology,2013(8):44-47.
[9]Yu H J,Ding Z Q,He X P,et al.The research on MEMS micro capacitance sensor detection based on MS3110[J].Key Engineering Materials,2015,64(5):528-532.
[10]Zhou Y G,Tong L I,Hua Y.Micro-capacitance measurement system based on CDC technology[J].Journal of Shenyang University of Technology,2015(7):58-62.
[11]■ika D,Martinovi■ T,D■apo H.Measurement system for object detection based on multielectrode capacitive sensor[C].Opatija:International Convention on Information and Communication Technology,Electronics and Microelectronics,IEEE,2015.
[12]刘浪,马铁华,李新娥.基于TDC的微小电容测量电路的设计[J].电子技术应用,2010,36(1):71-74.Liu Lang,Ma Tiehua,Li Xine.Design of micro capacitance measurement circuit based on TDC[J].Electronic Technology Application,2010,36(1):71-74.
[13]夏吉,杨业汕,陈兴.基于Pcap01的电容式液位传感器系统设计[J].电子科技,2014,27(10):55-58.Xia Ji,Yang Yeshan,Chen Xing.Design of capacitive liquid level sensor system based on Pcap01[J].Electronic Science and Technology,2014,27(10):55-58.
[14]Deng L,Sang S,Zhang W,et al.Design of high-precision micro-capacitance detection system based on Pcap01[J].Chinese Journal of Sensors&Actuators,2013,26(8):1045-1049.
[15]熊丽霞.微弱电容传感信号读取电路技术研究[D].成都:电子科技大学,2013.Xiong Lixia.Study on the technology of reading circuit for weak capacitance sensing signal[D].Chengdu:University of Electronic Technology of China,2013.
[16]Wang Y,Chodavarapu V P.Differential wide temperature range CMOS interface circuit for capacitive MEMS pressure sensors[J].Sensors,2015,15(2):4253-4263.