四氟化硅气体中杂质的检测及净化研究进展
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摘要
介绍了四氟化硅气体中杂质的4种检测方法:气相色谱法、红外光谱法、气相色谱质谱法、原子发射光谱法。其中,气相色谱法一般用来测定四氟化硅气体中的烃类杂质,红外光谱法主要用来测定四氟化硅气体中的氟硅烷、氟氧硅烷、氟硅醇杂质。气相色谱质谱法用来测定四氟化硅气体中的六氟化硫杂质,原子发射光谱法主要用来测定四氟化硅气体中的金属杂质。然后对四氟化硅气体的不同净化方法进行列举,并对净化工艺的条件、优缺点进行了阐述。
The four detection methods for impurities in silicon tetrafluoride gas were introduced:gas chromatography,infrared spectroscopy,gas chromatography mass spectrometry,and atomic emission spectrometry.Among them,gas chromatography is generally used to determine hydrocarbon impurities in silicon tetrafluoride gas,and infrared spectroscopy is mainly used to determine fluorine silane,fluorooxysilane,and fluorosilicone impurities in silicon tetrafluoride gas.Gas chromatography-mass spectrometry was used to determine sulfur hexafluoride impurities in silicon tetrafluoride gas.Atomic emission spectrometry was mainly used to determine metal impurities in silicon tetrafluoride gas.Then the different purification methods for silicon tetrafluoride gas are listed,and the conditions,advantages and disadvantages of the purification process are described.
The four detection methods for impurities in silicon tetrafluoride gas were introduced:gas chromatography,infrared spectroscopy,gas chromatography mass spectrometry,and atomic emission spectrometry.Among them,gas chromatography is generally used to determine hydrocarbon impurities in silicon tetrafluoride gas,and infrared spectroscopy is mainly used to determine fluorine silane,fluorooxysilane,and fluorosilicone impurities in silicon tetrafluoride gas.Gas chromatography-mass spectrometry was used to determine sulfur hexafluoride impurities in silicon tetrafluoride gas.Atomic emission spectrometry was mainly used to determine metal impurities in silicon tetrafluoride gas.Then the different purification methods for silicon tetrafluoride gas are listed,and the conditions,advantages and disadvantages of the purification process are described.
引文
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[30]Naomichi Kitsugi,Tokorozawa.Method of refining silicon tetrafluoride gas:US,4457901[P].1984-07-03.
[2]王建萍.磷肥副产氟硅酸制备四氟化硅工艺研究[J].河南化工,2016,33(9):34-36.
[3]于剑昆.四氟化硅的生产概况[J].无机盐工业,2006,38(1):1-4.
[4]Ignatov S K,Sennikov P G,Chuprov L A,et al.Thermodynamic and kinetic parameters of elementary steps in gasphase hydrolysis of Si F4[J].Russian Chemical Bulletin,2003,52(4):837-845.
[5]Dahlke T,Ruffiner O,Cant R.Production of HF from H2Si F6[J].Procedia Engineering,2016,138:231-239.
[6]中华人民共和国国家质量监督检验检疫总局,中国国家标准化管理委员会.GB/T 31058-2014电子工业用气体四氟化硅[S].北京:中国标准出版社,2014.
[7]Krylov V A,Sorochkina T G.Gas-chromatographic determination of C1-C4,hydrocarbon trace impurities in silicon tetrafluoride[J].Journal of Analytical Chemistry,2005,60(12):1125-1128.
[8]Vaks V L,Domracheva E G,Klyueva N V,et al.Application of high-resolution IR and microwave spectroscopies for investigation of the impurity composition of silicon tetrafluoride[J].Optics and Spectroscopy,2006,100(4):581-583.
[9]Bulanov A D,Balabanov V V,Pryakhin D A,et al.Preparation and fine purification of Si F4and28Si H4[J].Inorganic Materials,2002,38(3):283-287.
[10]Sorochkina T G,Bulanov A D,Sozin A Y,et al.Impurity composition of monoisotopic28Si F4silicon tetrafluoride[J].Inorganic Materials,2017,53(12):1300-1306.
[11]崔仙航,徐学敏,严性天,等.高纯气体中痕量金属杂质的测定[J].半导体学报,1989,10(12):945-951.
[12]宋晓年,刘义民.石墨炉原子吸收法测定高纯气体中微量金属方法的研究[J].宇航材料工艺,1995(4):48-51.
[13]俞云祺.电子气中杂质对半导体器件的影响[J].低温与特气,1991(2):9-12.
[14]Telgheder U,Khvostikov V A.Collection and determination of metal contaminants in gases[J].Journal of Analytical Atomic Spectrometry,1997,12(1):1-6.
[15]Bulanov A D,Pimenov V G.Determination of impurities in monoisotopic silicon tetrafluoride[J].Inorganic Materials,2004,40(7):754-759.
[16]钱慧娟.活性炭用于四氟化硅的净化[J].生物质化学工程,1983(12):474-475.
[17]维塔尔·雷万卡尔,贾米勒·伊布拉希姆.用于纯化四氟化硅的方法:CN,101918311[P].2010-12-15.
[18]Revankar V,Ibrahim J.Method for treatment of a gas stream containing silicon tetrafluoride and hydrogen chloride:US,0092530[P].2009-04-09.
[19]大塚丰三,木次直道,朱心才.高纯四氟化硅的制造方法[J].低温与特气,1986(1):43-47.
[20]百武宏之,原田功,古藤信彦.四弗化珪素ガス精製方法:JP,64051314[P].1989-11-14.
[21]Atobe Hitoshi,Masakazu Oka,Toraichi Kaneko.Production and use of tetrafluorosilane:EP,006374[P].2003-01-23.
[22]西迁俊彦,真田幸广,原田功,等.四弗化珪素ガスの精製方法:JP,1282115[P].1989-11-14.
[23]岳立平,蒋玉贵,柳彤,等.一种四氟化硅的除水方法:CN,105347348[P].2016-02-24.
[24]中川伸介,中村隆一,荣山茂郎,等.四弗化珪素の精製法:JP,018331[P].2004-01-22.
[25]胡琳.改性活性炭吸附去除氟硅酸中砷的研究[D].贵阳:贵州大学,2008.
[26]麻生真次,冈田自子,原田功,等.四弗化珪素の精製方法:JP,128412[P].2003-05-08.
[27]古藤信彦,百武宏之,原田功,等.四弗化珪素スの精製方法:JP,64052604[P].1989-02-28.
[28]唐安江,刘松林,张妙鹤,等.四氟化硅气体中杂质碘的净化方法:CN,103011172[P].2013-04-03.
[29]Atobe Hitoshi,Kawasaki.Production of tetrafluorsilane:EP,1406837[P].2003-01-23.
[30]Naomichi Kitsugi,Tokorozawa.Method of refining silicon tetrafluoride gas:US,4457901[P].1984-07-03.