硅基异质集成化合物半导体技术新进展
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摘要
随着摩尔定律即将走向尽头,以及军民电子信息系统对多功能集成、高密度集成、小体积重量、低功耗、大带宽、低延迟等性能的持续追求,将多种化合物半导体材料体系(如GaN、InP、SiC等)的功能器件、芯片,与CMOS集成电路的芯片进行异质集成的技术正在拉开序幕,将在微电子、光电子等领域带来一场新的革命,硅基异质集成也被认为是发展下一代集成微系统的技术平台。本文梳理了射频微电子学与硅光子学领域中以化合物半导体为主的材料(或芯片)与硅半导体材料(或芯片)异质集成的最新进展,以期国内相关领域研究人员对国外的进展有一个比较全面的了解。
As Moore's law is coming to an end,and the continuous pursuit of multi-functional integration,high density integration,small volume weight,low power consumption,large bandwidth,low delay,and so on,heterogeneous integration of functional devices and chips of various compound semiconductor material systems( such as Ga N,In P,Si C,etc.) with chips of CMOS integrated circuit is beginning,which will bring a new revolution in the post Moore era. The silicon-based heterogeneous integration is also regarded as the technical platform for the development of the next generation integrated microsystems. The latest developments in the heterogeneous integration of compound semiconductor materials( or chips) with silicon semiconductor materials( or chips) in the field of RF microelectronics and silicon photonics are reviewed in the article,so as to provide domestic researchers with a more comprehensive understanding of the progress abroad.
As Moore's law is coming to an end,and the continuous pursuit of multi-functional integration,high density integration,small volume weight,low power consumption,large bandwidth,low delay,and so on,heterogeneous integration of functional devices and chips of various compound semiconductor material systems( such as Ga N,In P,Si C,etc.) with chips of CMOS integrated circuit is beginning,which will bring a new revolution in the post Moore era. The silicon-based heterogeneous integration is also regarded as the technical platform for the development of the next generation integrated microsystems. The latest developments in the heterogeneous integration of compound semiconductor materials( or chips) with silicon semiconductor materials( or chips) in the field of RF microelectronics and silicon photonics are reviewed in the article,so as to provide domestic researchers with a more comprehensive understanding of the progress abroad.
引文
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[25]Chen L,Chen J,Nagy J,et al.Reano,highly linear ring modulator from hybrid silicon and lithium niobate[J].Opt.Express,2015,23(10):13255-13264.
[26]Stanton E J,Heck M J R,et al.Multi-octave spectral beam combiner on ultrabroadband photonic integrated circuit platform[J].Optics Express,2015,23(9):11272-11283.
[2]Sun C,Wade M T,Lee Y,et al.Single-chip microprocessor that communicates directly using light[J].Nature,2015,528(7583):534.
[3]Green D S,Dohrman C L,Demmin J,et al.A revolution on the horizon from DARPA:Heterogeneous Integration for Revolutionary Microwave/Millimeter-Wave Circuits at DARPA:Progress and Future Directions[J].IEEE Microwave Magazine,2017,18(2):44-59.
[4]Watts M R.Towards an integrated photonic LIDAR chip[C]//Applied Industrial Optics:Spectroscopy,Imaging and Metrology,2015.
[5]C.Metz.Delivering the internet via drone…and laser,Wired[OL].http://www.wired.com/2015/04/yael-maguire/.
[6]E O Johnson.Physical limitations on frequency and power parameters of transistors[J].RCA Rev.,1965,26:163-177.
[7]C.-H.Jan,et al.A 45nm low power system-on-chip technology with dual gate(logic and I/O)high-k/metal gate strained silicon Transistors[J].IEDM Tech.Dig.,2008:637-640.
[8]Chevalier,et al.towards THz Si Ge HBTs[C]//2011IEEE Bipolar/Bi CMOS Circuits and Technology Meeting(BCTM),2011:57-65.
[9]A Gutierrez-Aitken,P Chang-Chien,W Phan,et al.Advanced heterogeneous integration of In P HBT and CMOSSi technologies for high performance mixed signal applications[C]//Proc.IEEE Microwave Symp.Tech.Dig.,2009:1109-1112.
[10]Li J C,Royter Y,Patterson P R,et al.Heterogeneous wafer-scale integration of 250nm,300GHz In P DHBTs with a130nm RF-CMOS technology[J].IEDM Tech.Dig.,2018:944-946.
[11]Kazior T E,La Roche J R,Lubyshev D,et al.A high performance differential amplifier through the direct monolithic integration of In P HBTs and Si CMOS on silicon substrates[C]//Proc.IEEE Microwave Symp.Tech.Dig.,2009:1113-1116.
[12]Green D S,Dohrman C L,Kane A S,et al.Materials and integration strategies for modern RF integrated circuits[C]//Compound Semiconductor Integrated Circuit Symposium.IEEE,2014:1-4.
[13]Scott D,Sato K,Poust B,Monier C,et al.Diverse accessible heterogeneous integration(DAHI)foundry establishment at northrop grumman aerospace systems(NGAS)[C]//Proc.Int.Conf.Indium Phosphide and Related Materials,Santa Barbara,CA,2015.
[14]Wu Y C,Watanabe M,Larocca T.In P HBT/Ga N HEMT/Si CMOS heterogeneous integrated Q-band VCO-amplifier chain[C]//Radio Frequency Integrated Circuits Symposium.IEEE,2015:39-42.
[15]Kushner L J,Turner S E,et al.A 30-GS/s,12-bit,8-Vpp,arbitrary waveform generator with integrated 25 fs clock in the DARPA DAHI process[C]//Proc.Government Microcircuit Applications Conf.,2016.
[16]Rosker M J.Technologies for next generation T/R modules[C]//Proc.IEEE Radar Conf.,Boston,MA,2007:944-947.
[17]Bergman K.Silicon photonic on-chip optical interconnection networks[C]//The 20th Annual Meeting of the IEEE Lasers and Electro Optics Society,2007.-LEOS2007.,2007:470-471.
[18]Fang A W,Park H,Cohen O,et al.Electrically pumped heterogeneous Al Ga In As-silicon evanescent laser[J].Opt.Exp.,2006,14:9203-9210.
[19]Heck M J R,Bauters J F,Davenport M,et al.Heterogeneous silicon photonic integrated circuit technology[J].IEEE Journal of Selected Topics In Quantum Electronics,2013,19(4):6100117.
[20]Groote A De,Peters J D,Davenport M L,et al.Heterogeneously integrated III-V-on-silicon multibandgap superluminescent light-emitting diode with 290nm optical bandwidth[J].Opt.Lett.2014,39:4784-4787.
[21]Komljenovic T,Srinivasan S,et al.Widely tunable narrowlinewidth monolithically integrated external-cavity semiconductor lasers[J].IEEE Journal of Selected Topics in Quantum Electronics,2015,21(6):214-222.
[22]Kobayashi N,Sato K,Namiwaka M,et al.Silicon photonic heterogeneous ring filter external cavity wavelength tunable lasers[J].Journal of Lightwave Technology,2015,33(6):1241-1246.
[23]Zhang C,Srinivasan S,Tang Y M,et al.Low threshold and high speed short cavity distributed feedback heterogeneous silicon lasers[J].Optics Express,2014,22(9):10202-10209.
[24]S.Chen,et.al.Electrically pumped continuous-wave III-V quantum dot lasers on silicon[J].Nature Photonics2016,10(5):307-311.
[25]Chen L,Chen J,Nagy J,et al.Reano,highly linear ring modulator from hybrid silicon and lithium niobate[J].Opt.Express,2015,23(10):13255-13264.
[26]Stanton E J,Heck M J R,et al.Multi-octave spectral beam combiner on ultrabroadband photonic integrated circuit platform[J].Optics Express,2015,23(9):11272-11283.