N型IBC电池工艺仿真研究

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英文篇名：Simulation of N-typeInterdigital back contact solar cells 作者：席珍珍 ; 李亚兵 ; 郭永刚 ; 吴翔 英文作者：XI Zhenzhen;LI Yabing;GUO Yonggang;WU Xiang;SPIC Xi'an Solar Power Co.,Ltd.;Department of Applied Chemistry,School of Electronics and Information,Northwestern Polytechnical University; 关键词：TCAD ; IBC电池 ; 扩散工艺 ; 少子寿命 英文关键词：TCAD;;Interdigitated Back Contact solar cell;;Diffusion process;;Minority carrier lifetime 中文刊名：GNCQ 英文刊名：Journal of Functional Materials and Devices 机构：国家电投集团西安太阳能电力有限公司;西北工业大学电子信息学院; 出版日期：2019-06-30 出版单位：功能材料与器件学报 年：2019 期：v.25 语种：中文; 页：GNCQ201902002 页数：5 CN：02 ISSN：31-1708/TB 分类号：15-19

摘要

利用TCAD中ATHENA半导体工艺仿真软件模拟了N型叉指背接触(IBC)单晶硅太阳能电池,采用ATLAS研究了不同电阻率情况下,N型硅片衬底厚度和少子寿命对N型IBC电池效率的影响,发现当N型硅片衬底硅少子寿命在2000μs,电阻率在1Ω·cm附近,IBC电池能够获得最佳效率。并在不同扩散时间条件下,分析了产业化工艺过程中发射极扩散时间、扩散温度和扩散浓度对IBC电池结深和效率的影响。研究发现,结深随着扩散时间的延长呈增大趋势,且扩散温度与扩散源浓度越大,结深越大。当扩散温度达到1000℃时,电池效率在结深为1.104μm处获得最大值(22.63%)。当扩散浓度达到3×10~(20)cm~(-3)时,电池效率在结深为1.22μm处获得最大值(23.27%)。本文从衬底选择和扩散工艺优化两方面对未来IBC电池产业化工艺优化方向提供理论基础。
        N-type interdigital back contact solar cells were simulated by TACD in ATHENA semiconductor process simulation software. ATLAS was used to study the impact of thickness and minority carrier lifetime of N-type wafers on solar cell efficiency with different resistivity. When the N-type wafer has a lifetime of 2000 μs and resistivity of 1 Ω·cm,can obtain the best efficiency. The effects of emitter diffusion time,temperature and concentration on the junction depth and efficiency of IBC cells were also analyzed.We can found that the junction depth increases with the extension of diffusion time,and the junction depth is larger with diffusion temperature and diffusion source concentration. When the diffusion temperature reached 1000 ° C,the cell efficiency obtained a maximum value( 22.63%) at a junction depth of 1.104 μm. When the diffusion concentration reached 3×1020 cm-3,Efficiency obtained the maximum value( 23.27%) at a junction depth of 1.22 μm.

引文

[1]Kluska S,Granek F,Rüdiger M,et al. Modeling and optimization study of industrial n-type high-efficiency backcontact back-junction silicon solar cells[J]. Solar Energy Materials&Solar Cells. 2010,94(3):568-577.
    [2]Yang G,Ingenito A,Isabella O,et al. IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts[J]. Solar Energy Materials and Solar Cells. 2016,158:84-90.
    [3] Budhraja V,Devayajanam S,Basnyat P. Simulation Results:Optimization of Contact Ratio for Interdigitated BackContact Solar Cells[J]. International Journal of Photoenergy.2017,2017:1-10.
    [4]刘金颖,李宁,任丙彦,等. n型单晶硅衬底少子寿命对n-PERC电池性能的影响[J].太阳能学报. 2017(11):2958-2963.
    [5]Burgers A R,Cesar I,Guillevin N,et al. Designing IBC cells with FFE:Long range effects with circuit simulation[Z]. 2016.
    [6]Gong C,Van Wichelen K,Cornagliotti E,et al. In-depth Analysis of Front Surface Passivation Properties for N-type IBC Silicon Solar Cells Using Advanced Simulation[J]. Energy Procedia. 2011,8:141-146.
    [7]周涛,陆晓东,张鹏,等.晶硅太阳电池上表面减反射膜的效果评价与分析[J].硅酸盐通报. 2015(07):2024-2029.
    [8]赵雷,周春兰,李海玲,等.单晶硅太阳电池发射极的模拟优化[J].太阳能学报. 2009(12):1587-1591.
    [9]和江变,邹凯,马承鸿,等. N型背发射极晶体硅太阳电池模拟研究[J].光电技术应用. 2015(02):27-32.