基于GaN器件Buck电路死区功耗分析与优化
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摘要
氮化镓功率器件以其优异的高速、高效特性而有望在电源转换领域取得广泛应用。在Buck开关电源应用中,系统采用GaN HEMT替换传统Si功率器件后,系统死区损耗成为阻碍系统效率提升的一个重要因素。针对GaN器件的电源转换系统死区功耗展开理论及仿真讨论,详细分析Si功率器件与GaN HEMT在buck型开关电源系统中不同的工作机制以及死区时间对系统功耗的影响。优化结果表明,输入电压为12 V、输出电压为1.2 V、开关频率为700 k Hz的GaN基电源转换系统,在死区时间Td1=20 ns、Td2=0 ns、负载电流为20 A的情况下系统转换效率可达到92%。
GaN-based power device is expected to be widely used in power converter system, owing to its superior characteristics of high-speed and high-efficiency, it is important that the dead-time related loss of GaN-based HEMT devices have negative impact on improving system efficiency in application of buck converter. In order to accurately assess the influence of the dead-time related loss on converter efficiency, analytical model combined with simulation results for dead-time related loss of GaN-based devices upon power converter system has been discussed and optimized in this letter. The different operating principle of buck converter system is discussed in Si-MOSFET and GaN HEMT and the mechanism of dead-time related loss is analyzed, respectively. for a converter of input voltage 12 V to output voltage 1.2 V, load current 20 A operating at a switching frequency of 700 k Hz, the optimal efficiency is 92% under the conditions of T_(d1) is 20 ns, T_(d2) is 0 ns.
GaN-based power device is expected to be widely used in power converter system, owing to its superior characteristics of high-speed and high-efficiency, it is important that the dead-time related loss of GaN-based HEMT devices have negative impact on improving system efficiency in application of buck converter. In order to accurately assess the influence of the dead-time related loss on converter efficiency, analytical model combined with simulation results for dead-time related loss of GaN-based devices upon power converter system has been discussed and optimized in this letter. The different operating principle of buck converter system is discussed in Si-MOSFET and GaN HEMT and the mechanism of dead-time related loss is analyzed, respectively. for a converter of input voltage 12 V to output voltage 1.2 V, load current 20 A operating at a switching frequency of 700 k Hz, the optimal efficiency is 92% under the conditions of T_(d1) is 20 ns, T_(d2) is 0 ns.
引文
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[2]Pressman A,Billings K,Morey T.开关电源设计[M]第3版.北京:电子工业出版社,2010.
[3]Rogers E.Understanding buck power stages in switch mode power supplies[J/OL].Texas:Texas Instruments(1999-03)[2016-05].http://www.ti.com/lit/an/slva057/slva057.pdf.
[4]Maniktala S.精通开关电源设计[M].第2版.北京:人民邮电出版社,2014.
[5]Zhang Xi.How to calculate and minimize the dead time requirement for IGBTs proper-ly[J/OL].Munich:Infineon Technologies.(2008-05)[2016-05].http://www.infi neon.com/dgdl/Infin-eon-AN2007_04_Deadtime_calculation_for_IGBT_modules-AN-v1.0-en.pdf.
[6]马焕,王康平,杨旭.Ga N器件的LLC谐振变换器的优化设计[J].电源学报,2015,13(1):21-27.Ma Huan,Wang Kangping,Yang Xu.Optimal design of Ga N-based LLC resonant converter[J].Journal of Powe Supply,2015,13(1):21-27(in Chinese).
[7]Baliga B J.Power semiconductor device figure of meri for high-frequency applications[J].Electron Device Letters,IEEE,1989,10(10):455-457.
[8]Renesas electronics.RJK0301DPB data-sheet[OL].(2015-01)[2016-05].https://www.renesas.com/zh-cn/doc/products/transistor/003/r07ds1244ej0901_rjk0301dpb.pdf.
[9]Efficient Power Conversion Corporaton.EPC2023 datasheet[OL].(2015-12)[2016-05].http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2023_preliminary.pdf.
[10]Instruments T.LM5113 datasheet[OL].(2016-01)[2016-05].http:www.ti.com/product/lm5113.
[11]Linear Technology.LTC3833 datasheet[OL].(2010-11)[2016-05].http://cds.linear.com/docs/en/datasheet/3833f.pdf.
[12]Efficient Power Conversion.EPC9101 Quick Start Guide[OL].(2013)[2016-05].http://epc-co.com/epc/Portals/0/epc/documents/guides/EPC9101_qsg.pdf.