氧化铝抛光液对铝合金化学机械抛光性能的研究（英文）
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摘要
化学机械抛光(CMP)已成为金属合金最具潜力的平坦化技术.为了优化铝合金CMP工艺,研究了磨料粒度、分散剂浓度以及pH调节剂对铝合金CMP性能的影响.结果表明:随着磨料粒度的增加,材料去除率(MRR)和平均表面粗糙度(Ra)均增加,而表面光泽度(Gs)降低.分散剂(聚乙二醇,PEG-600)的质量分数达到0.5%时,可以获得最优的表面质量和最佳的光泽度.浆料中添加适量的柠檬酸作为pH调节剂可同时获得较优的表面质量和较高的抛光效率,柠檬酸对铝合金CMP性能的影响是腐蚀作用和螯合作用的综合效应.此外,简要讨论了氧化铝抛光液对铝合金的静态刻蚀机理和CMP机理.氧化铝抛光液的最优配方为Al2O3 3.3μm、H2O2 4%、PEG-600 0.5%和H3Cit 1.5%.
Chemical mechanical polishing has become potential global planarization technology for metal alloy. In this paper, we reported the CMP performances of aluminum alloy using alumina-based slurry. The influence of abrasive size,dispersant concentration(weight fraction) and pH-controlling agents on CMP performances were investigated,respectively. It is found that, with the particle size increased, the material removal rate and average surface roughness increased, while the glossiness decreased. When the weight fraction of PEG-600 reached 0.5%(weight fraction), the minimum Ra and the best glossiness can be achieved. Among kinds of the pH-controlling agents, citric acid proved to be efficient for lowest statics etch amount,highest MRR and best glossiness.In addition,the static etch and CMP mechanisms of alumina-based slurry were briefly discussed.The mechanisms revealed that citric acid on Al alloy CMP performance:responsed to combined effects of corrosion and chelation.The optimized alumina-based slurry ingredient was Al_2O_3,3.3μm;H_2O_2,4%;PEG-600,0.5%;H_3Cit,1.5%.This is different from the traditional polishing,in which hazardous chemicals HNO_3 and H_2SO_4 were used for Al alloys.
Chemical mechanical polishing has become potential global planarization technology for metal alloy. In this paper, we reported the CMP performances of aluminum alloy using alumina-based slurry. The influence of abrasive size,dispersant concentration(weight fraction) and pH-controlling agents on CMP performances were investigated,respectively. It is found that, with the particle size increased, the material removal rate and average surface roughness increased, while the glossiness decreased. When the weight fraction of PEG-600 reached 0.5%(weight fraction), the minimum Ra and the best glossiness can be achieved. Among kinds of the pH-controlling agents, citric acid proved to be efficient for lowest statics etch amount,highest MRR and best glossiness.In addition,the static etch and CMP mechanisms of alumina-based slurry were briefly discussed.The mechanisms revealed that citric acid on Al alloy CMP performance:responsed to combined effects of corrosion and chelation.The optimized alumina-based slurry ingredient was Al_2O_3,3.3μm;H_2O_2,4%;PEG-600,0.5%;H_3Cit,1.5%.This is different from the traditional polishing,in which hazardous chemicals HNO_3 and H_2SO_4 were used for Al alloys.
引文
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[11]Zhang Z,Liu W,Song Z,et al.Two-step chemical mechanical polishing of sapphire substrate[J].Journal of the Electrochemical Society,2010,157(6):H688-H691.doi:10.1149/1.3410116.
[12]Ahn Y,Yoon J Y,Baek C W,et al.Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction[J].Wear,2004,257(7-8):785-789.doi:10.1016/j.wear.2004.03.020.
[13]Zhang Linqi,Xia Lin,Peng Jin,et al.Effects of pH value and surfactant on silicon sol CMP slurry[J].Surface Technology,2014,43(4):24-26(in Chinese)[张琳琪,夏琳,彭进,等.pH值和表面活性剂对硅溶胶CMP抛光液的影响[J].表面技术,2014,43(4):24-26].
[14]Fu Gui,Liu Li,Ren Chengqiang,et al.Research on chemical polishing technology of new aluminum alloy[J].Hot Working Technology,2017,46(14):58-60(in Chinese)[付贵,刘丽,任呈强,等.新型铝合金化学抛光工艺研究[J].热加工工艺,2017,46(14):58-60].
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[17]Prabhu Deepa,Rao Padmalatha.Corrosion behaviour of 6063 aluminium alloy in acidic and in alkaline media[J].Arabian Journal of Chemistry,2013,109(10):S2234-S2244.
[18]Wang Y L,Tseng W T,Chang S C.Chemical-mechanical polish of aluminum alloy thin films:slurry chemistries and polish mechanisms[J].Thin Solid Films,2005,474(1-2):36-43.doi:10.1016/j.tsf.2004.08.115.
[19]Hsu J W,Chiu S Y,Wang Y L,et al.The removal selectivity of titanium and aluminum in chemical mechanical planarization[J].Journal of the Electrochemical Society,2002,149(3):G204-G208.doi:10.1149/1.1449954.
[20]Li Xiujuan,Jin Zhuji,Kang Renke,et al.Study on abrasive effect in copper chemical-mechanical polishing[J].Tribology,2005,25(5):431-435(in Chinese)[李秀娟,金洙吉,康仁科,等.磨料对铜化学机械抛光过程的影响研究[J].摩擦学学报,2005,25(5):431-435].doi:10.3321/j.issn:1004-0595.2005.05.011.
[21]Yuan Yigao,Chang Xiaozhen,Zhu Shigen.Influence of loose abrasive lapping craft on workpiece surface quality and material removal rate[J].Manufacturing Technology&Machine Tool,2011,30(8):166-169(in Chinese)[原一高,畅晓振,朱世根.散料研磨工艺对工件表面质量及材料去除率的影响[J].制造技术与机床,2011,30(8):166-169].doi:10.3969/j.issn.1005-2402.2011.08.048.
[22]Lim D S,Ahn J W,Park H S,et al.The effect of CeO2 abrasive size on dishing and step height reduction of silicon oxide film in STI-CMP[J].Surface&Coatings Technology,2005,200(5-6):1751-1754.
[23]Lee S H,Lu Z,Babu S V,et al.Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria[J].Journal of Materials Research,2002,17(106):2744-2749.
[24]Basim G B,Adler J J,Mahajan U,et al.Effect of particle size of chemical mechanical polishing slurries for enhanced polishing with minimal defects[J].Journal of the Electrochemical Society,2000,147(9):3523-3528.doi:10.1149/1.1393931.
[25]Pan Mengya,Xu Shankun,Cen Yuwan,et al.Glossiness charaterization of aluminum product surface in the alkaline chemical polishing processes[J].Journal of Anhui University of Technology,2017,34(3):260-263(in Chinese)[潘梦雅,徐善坤,岑豫皖,等.碱性抛光工艺中铝制品表面光泽度的表征[J].安徽工业大学学报(自然科学版),2017,34(3):260-263].doi:10.3969/j.issn.1671-7872.2017.03.009.
[26]Hosoya Y,Shiraishi T,Odatsu T,et al.Effects of polishing on surface roughness,gloss and color of surface reaction type prereacted glass-ionomer filled resin composite[J].American Journal of Dentistry,2011,24(3):138-142.
[27]Tokunaga J,Kojima T,Kinuta S,et al.Large-area electron beam irradiation for surface polishing of cast titanium[J].Dental Materials Journal,2009,28(5):571-577.doi:10.4012/dmj.28.571.
[28]Neirynck J M,Yang G R,Murarka S P,et al.The addition of surfactant to slurry for polymer CMP:effects on polymer surface,removal rate and underlying Cu[J].Thin Solid Films,1996,s290- 291(24):447-452.
[29]Murarka S P.Chemical-mechanical planarization of the polymer interlayer dielectrics[J].Mrs Proceedings,1998,511(6):1-6.
[30]Yang G R.Chemical-mechanical polishing of parylene N and benzocyclobutene films[J].Journal of the Electrochemical Society,1997,144(9):3249-3255.doi:10.1149/1.1837992.
[31]Kim H G,An Y M,Moon D K,et al.Effect of chemicals and slurry particles on chemical mechamical polishing of polyimide[J].Japanese Journal of Applied Physics,2000,39(3A):1085-1090.
[32]Rosliza R,Nik W B W,Senin H B.The effect of inhibitor on the corrosion of aluminum alloys in acidic solutions[J].Materials Chemistry&Physics,2008,107(2-3):281-288.
[33]Kim I K,Prasad Y N,Kwon T Y,et al.Citric acid and NaIO4 based alkaline cleaning solution for particle removal during post-ru CMPcleaning[J].Journal of the Electrochemical Society,2011,158(10):H1052-H1056.doi:10.1149/1.3621343.
[34]Psaume J,Pierre B.Effect of organic acids in copper chemical mechanical planarization slurry on slurry stability and particle contamination on copper surfaces[J].Japanese Journal of Applied Physics,2002,41(3A):1305-1310.
[35]Huang Huadong,Min Pengfei,Zhong Yanan,et al.Chemical mechanical polishing of 7003 aluminum alloy in hydrogen peroxide system polishing slurry[J].Light Metals,2016,(5):49-52(in Chinese)[黄华栋,闵鹏飞,仲亚男,等.双氧水体系抛光液中7003铝合金的化学机械抛光[J].轻金属,2016,(5):49-52].
[36]Eom D H,Kim I K,Kang Y J,et al.The effect of hydrogen peroxide on frictional and thermal behaviors in a citric acid-based copper chemical mechanical planarization slurry[J].Japanese Journal of Applied Physics,2008,47(7):5385-5389.doi:10.1143/JJAP.47.5385.
[37]?típskáP,Schulmann K,Thompson A B,et al.Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry[J].Journal of the Electrochemical Society,2000,147(1):149-154.doi:10.1149/1.1393168.
[2]Mi?ovi?Mitar,Kemal Deliji?.The influence of the surface roughness on the drawing parameters of aluminum-alloy auto-body sheets[J].Materials Technology,2001,35(1-2):17-20.
[3]Saleema N,Sarkar D K,Paynter R W,et al.A simple surface treatment and characterization of AA 6061 aluminum alloy surface for adhesive bonding applications[J].Applied Surface Science,2012,261:742-748.doi:10.1016/j.apsusc.2012.08.091.
[4]Guan J L,Ma X Q,Zhang X H,et al.Research on ELID grinding performance of GCr15 steel[J].Advanced Materials Research,2013,797:740-745.doi:10.4028/www.scientific.net/AMR.797.
[5]Wen C D,Mudawar I.Modeling the effects of surface roughness on the emissivity of aluminum alloys[J].International Journal of Heat&Mass Transfer,2006,49(23):4279-4289.
[6]Suraratchai M,Limido J,Mabru C,et al.Modelling the influence of machined surface roughness on the fatigue life of aluminium alloy[J].International Journal of Fatigue,2008,30(12):2119-2126.doi:10.1016/j.ijfatigue.2008.06.003.
[7]Wang Yongguang,Chen Yao,Zhao Yongwu,et al.Simulation of material removal in magnesium alloy chemical mechanical polishing by neural network and genetic algorithm[J].Lubrication Engineering,2016,41(11):6-9(in Chinese)[王永光,陈瑶,赵永武,等.基于遗传算法优化神经网络的镁合金化学机械抛光材料去除模型[J].润滑与密封,2016,41(11):6-9].doi:10.3969/j.issn.0254-0150.2016.11.002.
[8]Lee C,Lee H,Jeong M,et al.A study on the correlation between pad property and material removal rate in CMP[J].International Journal of Precision Engineering&Manufacturing,2011,12(5):917-920.
[9]Wang T,Zhao D,He Y,et al.Effect of slurry injection position on material removal in chemical mechanical planarization[J].International Journal of Advanced Manufacturing Technology,2013,67(9-12):2903-2908.doi:10.1007/s00170-012-4702-2.
[10]Chen Y,Qin J,Wang Y,et al.Core/shell composites with polystyrene cores and meso-silica shells as abrasives for improved chemical mechanical polishing behavior[J].Journal of Nanoparticle Research,2015,17(9):363(1-11).
[11]Zhang Z,Liu W,Song Z,et al.Two-step chemical mechanical polishing of sapphire substrate[J].Journal of the Electrochemical Society,2010,157(6):H688-H691.doi:10.1149/1.3410116.
[12]Ahn Y,Yoon J Y,Baek C W,et al.Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction[J].Wear,2004,257(7-8):785-789.doi:10.1016/j.wear.2004.03.020.
[13]Zhang Linqi,Xia Lin,Peng Jin,et al.Effects of pH value and surfactant on silicon sol CMP slurry[J].Surface Technology,2014,43(4):24-26(in Chinese)[张琳琪,夏琳,彭进,等.pH值和表面活性剂对硅溶胶CMP抛光液的影响[J].表面技术,2014,43(4):24-26].
[14]Fu Gui,Liu Li,Ren Chengqiang,et al.Research on chemical polishing technology of new aluminum alloy[J].Hot Working Technology,2017,46(14):58-60(in Chinese)[付贵,刘丽,任呈强,等.新型铝合金化学抛光工艺研究[J].热加工工艺,2017,46(14):58-60].
[15]Yi J.On the wafer/pad friction of chemical-mechanical planarization(CMP)processes-Part II:experiments and applications[J].IEEETransactions on Semiconductor Manufacturing,2005,18(3):359-370.doi:10.1109/TSM.2005.852101.
[16]Shimada N.Slurry chemical corrosion and galvanic corrosion during copper chemical mechanical polishing[J].Japanese Journal of Applied Physics,2000,39(11):6216-6222.
[17]Prabhu Deepa,Rao Padmalatha.Corrosion behaviour of 6063 aluminium alloy in acidic and in alkaline media[J].Arabian Journal of Chemistry,2013,109(10):S2234-S2244.
[18]Wang Y L,Tseng W T,Chang S C.Chemical-mechanical polish of aluminum alloy thin films:slurry chemistries and polish mechanisms[J].Thin Solid Films,2005,474(1-2):36-43.doi:10.1016/j.tsf.2004.08.115.
[19]Hsu J W,Chiu S Y,Wang Y L,et al.The removal selectivity of titanium and aluminum in chemical mechanical planarization[J].Journal of the Electrochemical Society,2002,149(3):G204-G208.doi:10.1149/1.1449954.
[20]Li Xiujuan,Jin Zhuji,Kang Renke,et al.Study on abrasive effect in copper chemical-mechanical polishing[J].Tribology,2005,25(5):431-435(in Chinese)[李秀娟,金洙吉,康仁科,等.磨料对铜化学机械抛光过程的影响研究[J].摩擦学学报,2005,25(5):431-435].doi:10.3321/j.issn:1004-0595.2005.05.011.
[21]Yuan Yigao,Chang Xiaozhen,Zhu Shigen.Influence of loose abrasive lapping craft on workpiece surface quality and material removal rate[J].Manufacturing Technology&Machine Tool,2011,30(8):166-169(in Chinese)[原一高,畅晓振,朱世根.散料研磨工艺对工件表面质量及材料去除率的影响[J].制造技术与机床,2011,30(8):166-169].doi:10.3969/j.issn.1005-2402.2011.08.048.
[22]Lim D S,Ahn J W,Park H S,et al.The effect of CeO2 abrasive size on dishing and step height reduction of silicon oxide film in STI-CMP[J].Surface&Coatings Technology,2005,200(5-6):1751-1754.
[23]Lee S H,Lu Z,Babu S V,et al.Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria[J].Journal of Materials Research,2002,17(106):2744-2749.
[24]Basim G B,Adler J J,Mahajan U,et al.Effect of particle size of chemical mechanical polishing slurries for enhanced polishing with minimal defects[J].Journal of the Electrochemical Society,2000,147(9):3523-3528.doi:10.1149/1.1393931.
[25]Pan Mengya,Xu Shankun,Cen Yuwan,et al.Glossiness charaterization of aluminum product surface in the alkaline chemical polishing processes[J].Journal of Anhui University of Technology,2017,34(3):260-263(in Chinese)[潘梦雅,徐善坤,岑豫皖,等.碱性抛光工艺中铝制品表面光泽度的表征[J].安徽工业大学学报(自然科学版),2017,34(3):260-263].doi:10.3969/j.issn.1671-7872.2017.03.009.
[26]Hosoya Y,Shiraishi T,Odatsu T,et al.Effects of polishing on surface roughness,gloss and color of surface reaction type prereacted glass-ionomer filled resin composite[J].American Journal of Dentistry,2011,24(3):138-142.
[27]Tokunaga J,Kojima T,Kinuta S,et al.Large-area electron beam irradiation for surface polishing of cast titanium[J].Dental Materials Journal,2009,28(5):571-577.doi:10.4012/dmj.28.571.
[28]Neirynck J M,Yang G R,Murarka S P,et al.The addition of surfactant to slurry for polymer CMP:effects on polymer surface,removal rate and underlying Cu[J].Thin Solid Films,1996,s290- 291(24):447-452.
[29]Murarka S P.Chemical-mechanical planarization of the polymer interlayer dielectrics[J].Mrs Proceedings,1998,511(6):1-6.
[30]Yang G R.Chemical-mechanical polishing of parylene N and benzocyclobutene films[J].Journal of the Electrochemical Society,1997,144(9):3249-3255.doi:10.1149/1.1837992.
[31]Kim H G,An Y M,Moon D K,et al.Effect of chemicals and slurry particles on chemical mechamical polishing of polyimide[J].Japanese Journal of Applied Physics,2000,39(3A):1085-1090.
[32]Rosliza R,Nik W B W,Senin H B.The effect of inhibitor on the corrosion of aluminum alloys in acidic solutions[J].Materials Chemistry&Physics,2008,107(2-3):281-288.
[33]Kim I K,Prasad Y N,Kwon T Y,et al.Citric acid and NaIO4 based alkaline cleaning solution for particle removal during post-ru CMPcleaning[J].Journal of the Electrochemical Society,2011,158(10):H1052-H1056.doi:10.1149/1.3621343.
[34]Psaume J,Pierre B.Effect of organic acids in copper chemical mechanical planarization slurry on slurry stability and particle contamination on copper surfaces[J].Japanese Journal of Applied Physics,2002,41(3A):1305-1310.
[35]Huang Huadong,Min Pengfei,Zhong Yanan,et al.Chemical mechanical polishing of 7003 aluminum alloy in hydrogen peroxide system polishing slurry[J].Light Metals,2016,(5):49-52(in Chinese)[黄华栋,闵鹏飞,仲亚男,等.双氧水体系抛光液中7003铝合金的化学机械抛光[J].轻金属,2016,(5):49-52].
[36]Eom D H,Kim I K,Kang Y J,et al.The effect of hydrogen peroxide on frictional and thermal behaviors in a citric acid-based copper chemical mechanical planarization slurry[J].Japanese Journal of Applied Physics,2008,47(7):5385-5389.doi:10.1143/JJAP.47.5385.
[37]?típskáP,Schulmann K,Thompson A B,et al.Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry[J].Journal of the Electrochemical Society,2000,147(1):149-154.doi:10.1149/1.1393168.