退火温度对ZnO薄膜晶体管电学性能的影响（英文）
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摘要
为研究退火温度(从室温到500℃)对ZnO薄膜和薄膜晶体管(thin-film transistor,TFT)电性能的影响,使用X射线衍射、扫描电子显微镜、原子力显微镜、X射线光电子能谱和光致发光等技术对ZnO-TFT进行表征.实验结果表明,具有400℃退火温度的Zn O-TFT表现出最佳性能,迁移率为2. 7cm2/Vs,阈值电压为4. 6 V,开/关电流比为5×10~5,亚阈值摆幅为0. 98 V/Dec.电性能的改善可归因于载流子浓度的降低,Zn O膜结晶的增强,以及氧化物半导体层和绝缘层之间界面的改善.
In order to study the influence of annealing temperature( from room temperature to 500 ℃) on the electrical properties of ZnO thin film and thin-film transistors( TFTs),we carefully characterize the ZnO-TFT by using a wide range of techniques including X-ray diffraction( XRD),scanning electron microscope( SEM),atomic force microscopy( AFM),X-ray photoelectron spectroscopy( XPS),and photoluminescence( PL). The results show that the ZnO-TFTs annealed at 400 ℃ have the best performance with mobility of 2. 7 cm2/Vs,threshold voltage of 4. 6 V,on/off current ratio of 5 × 105 and subthreshold swing of 0. 98 V/Dec. The improvement of the electrical performance could be attributed to the decrease of carrier concentration,the enhancement of crystallization in ZnO films,and the improvement of interface between the oxide semiconductor layer and the insulation layer.
In order to study the influence of annealing temperature( from room temperature to 500 ℃) on the electrical properties of ZnO thin film and thin-film transistors( TFTs),we carefully characterize the ZnO-TFT by using a wide range of techniques including X-ray diffraction( XRD),scanning electron microscope( SEM),atomic force microscopy( AFM),X-ray photoelectron spectroscopy( XPS),and photoluminescence( PL). The results show that the ZnO-TFTs annealed at 400 ℃ have the best performance with mobility of 2. 7 cm2/Vs,threshold voltage of 4. 6 V,on/off current ratio of 5 × 105 and subthreshold swing of 0. 98 V/Dec. The improvement of the electrical performance could be attributed to the decrease of carrier concentration,the enhancement of crystallization in ZnO films,and the improvement of interface between the oxide semiconductor layer and the insulation layer.
引文
[1]WEHRSPOHN R B,POWELL M J,DEANE S C. Kinetics of defect creation in amorphous silicon thin film transistors[J]. Journal of Applied Physics,2003,93(9):5780-5788.
[2]COMBER P G L,SPEAR W E,GHAITH A. Amorphoussilicon field-effect device and possible application[J].Electronics Letters,1979,15(6):179-181.
[3]LI J,BANSAL A,ROY K. Poly-Si thin-film transistors:an efficient and low-cost option for digital operation[J].IEEE Transactions on Electron Devices,2007,54(11):2918-2929.
[4]FORTUNATO E,BARQUINHA P,MARTINS R. Oxide semiconductor thin-film transistors:a review of recent advances[J]. Advanced Materials,2012,24(22):2945-2986.
[5]FRENZEL H,LAJN A,WENCKSTERN H V,et al.Correction:recent progress on Zn O-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits[J]. Advanced Materials,2011,23(12):1425-1425.
[6]KIM W G,TAK Y J,DU Ahn B,et al. High-pressure gas activation for amorphous indium-gallium-zinc-oxide thinfilm transistors at 100℃[J]. Scientific Reports,2016,6:230-239.
[7]KAVINDRA K,JITENDRA S,NAVNEET G,et al. Effect of thickness on the properties of Zn O thin films prepared by reactive RF sputtering[J]. Journal of Materials Science:Materials in Electronics,2018,29(17):14501-14507.
[8]HAN S Y,HERMAN G S,CHANG C H. Low-Temperature,High-performance,solution-processed indium oxide thin-film transistors[J]. Journal of the American Chemical Society,2011,133(14):5166-5169.
[9]MA A M,GUPTA M,CHOWDHURY F R,et al. Zinc oxide thin film transistors with Schottky source barriers[J]. Solid State Electronics,2012,76:104-108.
[10]PARK J S. The annealing effect on properties of Zn O thin film transistors with Ti/Pt source-drain contact[J]. Journal of Electroceramics,2010,25(2/3/4):145-149.
[11]CROSS R B M,DE SOUZA M M,DEANE S C,et al. A comparison of the performance and stability of Zn O-TFTs with silicon dioxide and nitride as gate insulators[J].IEEE Transactions on Electron Devices,2008,55(5):1109-1115.
[12]AHN C H,KIM S H,KIM Y K,et al. Effect of postannealing temperatures on thin-film transistors with Zn O/Al2O3superlattice channels[J]. Thin Solid Films,2015,584:336-340.
[13]VYAS S. A short review on:optimization techniques of Zn O based thin film transistors[J]. Chinese Journal of Physics,2018,56(1):117-124.
[14]XU W Y,WANG H,YE L,et al. The role of solutionprocessed high-κgate dielectrics in electrical performance of oxide thin-film transistors[J]. Journal of Materials Chemistry C,2014,2(27):5389-5396.
[15]XU W Y,WANG H,XIE F Y,et al. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature,high-performance oxide thin-film transistors[J]. ACS Applied Materials&Interfaces,2015,7(10):5803-5810.
[16]HAO L. Study on the properties of Zn O-TFT prepared by magnetron sputtering[J]. Solid State Phenomena,2018,278:48-53.
[17]NISHII J,HOSSAIN F M,TAKAGI S,et al. High mobility thin film transistors with transparent Zn O channels[J].The Japanese Journal of Applied Physics, 2003, 42:L347-L349.
[18]LU L,LI J,WONG M. A comparative study on the effects of annealing on the characteristics of zinc oxide thin-film transistors with gate-stacks of different gas-permeability[J]. IEEE Electron Device Letters,2014,35(8):841-843.
[19]HONG R,HUANG J,HE H,et al. Influence of different post-treatments on the structure and optical properties of zinc oxide thin films[J]. Applied Surface Science,2005,242(3):346-352.
[20]ZHU D L,WANG Q,HAN S,et al. Optimization of process parameters for the electrical properties in Ga-doped Zn O thin films prepared by r. f. magnetron sputtering[J]. Applied Surface Science,2014,298:208-213.
[21]JANOTTI A,VAN D W,CHRIS G. Native point defects in Zn O[J]. Physical Review B(Condensed Matter and Materials Physics),2007,76(16):165202.
[22]WU F,FANG L,PAN Y J,et al. Effect of substrate temperature on the structural,electrical and optical properties of Zn O:Ga thin films prepared by RF magnetron sputtering[J]. Physica E,2010,43(1):228-234.
[2]COMBER P G L,SPEAR W E,GHAITH A. Amorphoussilicon field-effect device and possible application[J].Electronics Letters,1979,15(6):179-181.
[3]LI J,BANSAL A,ROY K. Poly-Si thin-film transistors:an efficient and low-cost option for digital operation[J].IEEE Transactions on Electron Devices,2007,54(11):2918-2929.
[4]FORTUNATO E,BARQUINHA P,MARTINS R. Oxide semiconductor thin-film transistors:a review of recent advances[J]. Advanced Materials,2012,24(22):2945-2986.
[5]FRENZEL H,LAJN A,WENCKSTERN H V,et al.Correction:recent progress on Zn O-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits[J]. Advanced Materials,2011,23(12):1425-1425.
[6]KIM W G,TAK Y J,DU Ahn B,et al. High-pressure gas activation for amorphous indium-gallium-zinc-oxide thinfilm transistors at 100℃[J]. Scientific Reports,2016,6:230-239.
[7]KAVINDRA K,JITENDRA S,NAVNEET G,et al. Effect of thickness on the properties of Zn O thin films prepared by reactive RF sputtering[J]. Journal of Materials Science:Materials in Electronics,2018,29(17):14501-14507.
[8]HAN S Y,HERMAN G S,CHANG C H. Low-Temperature,High-performance,solution-processed indium oxide thin-film transistors[J]. Journal of the American Chemical Society,2011,133(14):5166-5169.
[9]MA A M,GUPTA M,CHOWDHURY F R,et al. Zinc oxide thin film transistors with Schottky source barriers[J]. Solid State Electronics,2012,76:104-108.
[10]PARK J S. The annealing effect on properties of Zn O thin film transistors with Ti/Pt source-drain contact[J]. Journal of Electroceramics,2010,25(2/3/4):145-149.
[11]CROSS R B M,DE SOUZA M M,DEANE S C,et al. A comparison of the performance and stability of Zn O-TFTs with silicon dioxide and nitride as gate insulators[J].IEEE Transactions on Electron Devices,2008,55(5):1109-1115.
[12]AHN C H,KIM S H,KIM Y K,et al. Effect of postannealing temperatures on thin-film transistors with Zn O/Al2O3superlattice channels[J]. Thin Solid Films,2015,584:336-340.
[13]VYAS S. A short review on:optimization techniques of Zn O based thin film transistors[J]. Chinese Journal of Physics,2018,56(1):117-124.
[14]XU W Y,WANG H,YE L,et al. The role of solutionprocessed high-κgate dielectrics in electrical performance of oxide thin-film transistors[J]. Journal of Materials Chemistry C,2014,2(27):5389-5396.
[15]XU W Y,WANG H,XIE F Y,et al. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature,high-performance oxide thin-film transistors[J]. ACS Applied Materials&Interfaces,2015,7(10):5803-5810.
[16]HAO L. Study on the properties of Zn O-TFT prepared by magnetron sputtering[J]. Solid State Phenomena,2018,278:48-53.
[17]NISHII J,HOSSAIN F M,TAKAGI S,et al. High mobility thin film transistors with transparent Zn O channels[J].The Japanese Journal of Applied Physics, 2003, 42:L347-L349.
[18]LU L,LI J,WONG M. A comparative study on the effects of annealing on the characteristics of zinc oxide thin-film transistors with gate-stacks of different gas-permeability[J]. IEEE Electron Device Letters,2014,35(8):841-843.
[19]HONG R,HUANG J,HE H,et al. Influence of different post-treatments on the structure and optical properties of zinc oxide thin films[J]. Applied Surface Science,2005,242(3):346-352.
[20]ZHU D L,WANG Q,HAN S,et al. Optimization of process parameters for the electrical properties in Ga-doped Zn O thin films prepared by r. f. magnetron sputtering[J]. Applied Surface Science,2014,298:208-213.
[21]JANOTTI A,VAN D W,CHRIS G. Native point defects in Zn O[J]. Physical Review B(Condensed Matter and Materials Physics),2007,76(16):165202.
[22]WU F,FANG L,PAN Y J,et al. Effect of substrate temperature on the structural,electrical and optical properties of Zn O:Ga thin films prepared by RF magnetron sputtering[J]. Physica E,2010,43(1):228-234.