摘要
采用简单的一步水热法直接在不锈钢基底上制备了不同形貌的SnO2纳米棒阵列。利用X射线衍射(XRD),扫描电镜(SEM)、透射电镜(TEM)、分光光度计、场发射装置对材料的结构、形貌、光致发光谱和场发射特性进行了表征。XRD结果表明不锈钢基底上制备的样品为四方晶系金红石结构。SEM和TEM结果表明不同的反应条件下都能够在基底上大面积的垂直生长单晶SnO2纳米棒阵列,但是形貌和尺寸发生了改变(A:针尖状,B:铅笔状)。室温下的光致发光光谱(PL)表明两种样品在367、392、419 nm处分别存在较强的发射峰,并且紫外光峰强与可见光峰强比值较大,说明样品的结晶质量较好。场发射测试结果表明:两种样品的场发射都是通过电子隧道效应进行的,且样品A的场发射性能优于样品B。
Different morphology SnO2 nanorod array were directly synthesized on stainless steel substrate by simple one-pot hydrothermal method.The structure,morphology,photoluminescence and field emission of samples were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM),transmission electron microscopy(TEM),spectrophotometer and field emission testing device.XRD result indicated that samples on substrate belonged to tetragonal rutile structure.SEM and TEM results showed that large-area SnO2 nanorods grown vertically on the substrate with single crystal structure were obtained,but the size and morphology of nanorods changed with the reaction condition(A:needle-like,B:pencillike).The room temperature photoluminescence spectrum(PL) showed that three strong emissions peak appear at 367 nm,392 nm,419 nm respectively and the ratio of the UV emission peak to the visible emission peak was large,indicating the high crystallization quality.The field emission test results showed the field emission of two samples conduct through the electronic tunnel effect and the field emission performance of sample A was better than sample B.
引文
[1]Chen Zhili,Liu Weiguo.Surface topography and optical properties of monocrystalline silicon induced by low energy different ion beam parameters[J].Infrared and Laser Engineering,2013,42(9):2491-2495.(in Chinese)陈智利,刘卫国.不同离子束参数诱导单晶硅纳米微结构与光学性能[J].红外与激光工程,2013,42(9):2491-2495.
[2]Liu Xiaomin,Li Sugui,Gong Qiaoxia,et al.Affect of porous silicon film on transmission characteristics of p-type monocrystalline silicon in terahertz band[J].Infrared and Laser Engineering,2013,42(5):1237-1240.(in Chinese)刘晓旻,李苏鬼,弓巧侠,等.多孔硅薄膜对P型单晶硅太赫兹波段透射特性的影响[J].红外与激光工程,2013,42(5):1237-1240.
[3]Seo Y J,Kim G W,Sung C H,et al.Characterization of transparent and conductive electrodes of Nb-doped SnO2thin film by pulsed laser deposition[J].Current Applied Physics,2011,11(3):310-313.
[4]Yu Q Q,Wang K,Luan C H,et al.A dual-functional highly responsive gas sensor fabricated from SnO2porous[J].Sensors and Actuator B,2011,159(1):271-276.
[5]Kim Y S,Yu B,Kim D Y,et al.A hybridized electronselective layer Sb-doped SnO2nanowires for efficient inverted polymer solar cells[J].Solar Energy Materials and Solar Cells,2011,95(10):2874-2879.
[6]Courtel F M,Baranova E A,Abulebdeh Y,et al.In situ polyol-assisted synthesis of Nano-SnO2/carbon composite materials as anodes for lithiumion batteries[J].Journal of Power Sources,2010,195(8):2355-2361.
[7]Jeong J,Choi S P,Chang C I,et al.Photoluminescence properties of SnO2thin films grown by thermal CVD[J].Solid State Communications,2003,127(9-10):595-597.
[8]Gu F,Wang S F,IAi M K,et al.Photoluminescence properties of SnO2nanoparticles synthesized by sol-gel method[J].Journal of Physical Chemistry B,2004,108(24):8119-9123.
[9]He Y C,Wu J Y,Lin Y R,et al.Low-temperature growth and blue luminescence of SnO2nanoblades[J].Applied Physics Letters,2006,89(4):043115.
[10]Ding J,Yan X,Li J,et al.Enhancement of field emission and photoluminescence properties of graphene-SnO2composite nanostructures[J].ACS Appl Mater Interf,2011,3(11):4299-4305.