大尺寸单晶金刚石同质连接技术
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摘要
介绍了制备人造单晶金刚石的技术途径及发展现状,重点讨论并对比了几种化学气相沉积法(CVD)金刚石制备技术的优缺点,详细阐述了基于微波等离子体CVD (MPCVD)法的同质连接技术——一种突破晶体尺寸限制,实现大尺寸单晶金刚石的有效途径。通过该技术实现了英寸级单晶金刚石晶片的制备,并针对横向生长、界面质量及演化、三维结构连接控制等核心科学技术问题进行了分析和讨论,展望了其在尖端应用领域的发展前景。
The technical approach and status of development of synthetic single-crystal diamond(SCD) were introduced with the comparison of several different chemical vapor deposition(CVD) diamond techniques on their advantages and disadvantages.Coessential-joint growth technology, an effective method for breaking through the dimensional limitation and realizing the large size SCD, was focused on Microwave Plasma CVD(MPCVD). Inch sized SCD wafer was achieved. The discussion and analysis were presented on the scientific issues such as lateral growth, interface quality and evolution, as well as the control of 3 D structure connecting process. In addition, the prospects in the field of advanced applications were forecasted.
The technical approach and status of development of synthetic single-crystal diamond(SCD) were introduced with the comparison of several different chemical vapor deposition(CVD) diamond techniques on their advantages and disadvantages.Coessential-joint growth technology, an effective method for breaking through the dimensional limitation and realizing the large size SCD, was focused on Microwave Plasma CVD(MPCVD). Inch sized SCD wafer was achieved. The discussion and analysis were presented on the scientific issues such as lateral growth, interface quality and evolution, as well as the control of 3 D structure connecting process. In addition, the prospects in the field of advanced applications were forecasted.
引文
[1]ROSSINI F D,JESSUP R S.Heat and free energy of formation of carbon dioxide,and of the transition between graphite and diamond[J].Journal of Research of the National Bureau of Standards,1938,21(4):491-513.
[2]陈乾旺,娄正松,王强,等.人工合成金刚石研究进展[J].物理,2005,34(3):199-204.
[3]徐军峰.六面顶压机控制系统的研制[D].天津:天津大学,2003.
[4]DAI B,ZHAO J,RALCHENKO V,et al.Thermal conductivity of freestanding CVD diamond films by growing on both nuclear and growth sides[J].Diamond and Related Materials,2017,76:9-13.
[5]YAO K,DAI B,YANG L,et al.Deposition of microcrystalline diamond films in H2 microwave plasma with graphite powder as hydrocarbon precursor[J].Thin Solid Films,2019,669:103-107.
[6]ZHU J,YAO K,DAI B,et al.Diamond deposition on graphite in hydrogen microwave plasma[J].Journal of Coating Science and Technology,2018,5(1):12-18.
[7]YAO K,DAI B,RALCHENKO V,et al.Diamond films and particles growth in hydrogen microwave plasma with graphite solid precursor:optical emission spectroscopy study[J].Diamond and Related Materials,2018,82:33-40.
[8]ZHU J,ZHAO H,JIANG C,et al.Boron doped amorphous diamond window layer deposited by filtered arc for amorphous silicon alloy p-i-n solar cells[J].Solar Energy Materials and Solar Cells,2009,93(9):1652-1656.
[9]ZHU J,HAN J,LIU A,et al.Mechanical properties and Raman characterization of amorphous diamond films as a function of film thickness[J].Surface and Coatings Technology,2007,201(15):6667-6669.
[10]ZHU J,HAN J,HAN X,et al.Optical properties of amorphous diamond films evaluated by non-destructive spectroscopic ellipsometry[J].Optical Materials,2006,28(5):473-479.
[11]HALL H T.Ultra-high-pressure,high-temperature apparatus:the“belt”[J].Review of Scientific Instruments,1960,31(2):125-131.
[12]D′HAENENS-JOHANSSON U F S,KATRUSHA A,MOE K S,et al.Large colorless HPHT-grown synthetic gem diamonds from New Diamond Technology,Russia[J].Gems&Gemology,2015,51(3):260-279.
[13]罗锡裕,徐燕军,刘一波.中国人造金刚石的发展及其关键技术的进步[J].粉末冶金工业,2016,26(1):1-13.
[14]吕继磊.MPCVD制备大颗粒金刚石晶粒的研究[D].武汉:武汉工程大学,2013.
[15]SMITH J A,ROSSER K N,YAGI H,et al.Diamond deposition in a DC-arc jet CVD system:investigations of the effects of nitrogen addition[J].Diamond&Related Materials,2001,10(3-7):370-375.
[16]阳硕,满卫东,赵彦君,等.MPCVD法合成单晶金刚石的研究及应用进展[J].真空与低温,2015(3):131-138.
[17]JANSSEN G,GILING L J.“Mosaic”growth of diamond[J].Diamond and Related Materials,1995,4(7):1025-1031.
[18]SCHERMER J J,DE THEIJE F K,GILING L J.Mosaic growth of diamond:a study of homoepitaxial flame deposition and etching of{001}-oriented diamond layers[J].Journal of Crystal Growth,1996,165(4):387-401.
[19]FINDELING-DUFOUR C,GICQUEL A,CHIRON R.Growth of large single-crystal diamond layers:analysis of the junctions between adjacent diamonds[J].Diamond and Related Materials,1998,7(7):986-998.
[20]TALLAIRE A,ACHARD J,SILVA F,et al.Growth of large size diamond single crystals by plasma assisted chemical vapour deposition:recent achievements and remaining challenges[J].Comptes Rendus Physique,2013,14(2):169-184.
[21]MEGURO T,HIDA A,SUZUKI M,et al.Creation of nanodiamonds by single impacts of highly charged ions upon graphite[J].Applied Physics Letters,2001,79(23):3866-3868.
[22]YAMADA H,CHAYAHARA A,MOKUNO Y,et al.Fabrication of 1inch mosaic crystal diamond wafers[J].Appl Phys Express,2010,3:051301.
[23]YAMADA H,CHAYAHARA A,MOKUNO Y,et al.Developments of elemental technologies to produce inch-size single-crystal diamond wafers[J].Diam Relat Mater,2011,20:616-619.
[24]SHU G,DAI B,RALCHENKO V G,et al.Epitaxial growth of mosaic diamond:mapping of stress and defects in crystal junction with a confocal Raman spectroscopy[J].Journal of Crystal Growth,2017,463:19-26.
[25]SHU G,DAI B,RALCHENKO V G,et al.Vertical-substrate epitaxial growth of single-crystal diamond by microwave plasma-assisted chemical vapor deposition[J].Journal of Crystal Growth,2018,486:104-110.
[26]SHU G,DAI B,RALCHENKO V G,et al.Growth of threedimensional diamond mosaics by microwave plasma-assisted chemical vapor deposition[J].CrystEngComm,2017,20(7):198-203.
[27]YOSHIKAWA M,ISHIDA H,ISHITANI A,et al.Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobe[J].Applied Physics Letters,1990,57(5):428-430.
[28]JENG D G,TUAN H S,SALAT R F,et al.Oriented cubic nucleations and local epitaxy during diamond growth on silicon{100}substrates[J].Applied Physics Letters,1990,56(20):1968.
[29]YUGO S,KANAI T,KIMURA T,et al.Generation of diamond nuclei by electric field in plasma chemical vapor deposition[J].Applied Physics Letters,1991,58(10):1036-1038.
[30]CHEN Q,YANG J,LIN Z.Synthesis of oriented textured diamond films on silicon via hot filament chemical vapor deposition[J].Applied Physics Letters,1995,67(13):1853-1855.
[31]SCHRECK M,ROLL H,STRITZKER B.Diamond/Ir/SrTiO3:Amaterial combination for improved heteroepitaxial diamond films[J].Applied Physics Letters,1999,74(5):650-652.
[32]GSELL S,BERNER S,BRUGGER T,et al.Comparative electron diffraction study of the diamond nucleation layer on Ir(001)[J].Diamond&Related Materials,2008,17(7):1029-1034.
[33]GSELL S,FISCHER M,BAUER T,et al.Yttria-stabilized zirconia films of different composition as buffer layers for the deposition of epitaxial diamond/Ir layers on Si(001)[J].Diamond&Related Materials,2006,15(4):479-485.
[34]STEHL C,SCHRECK M,FISCHER M,et al.Thermal diffusivity of heteroepitaxial diamond films:experimental setup and measurements[J].Diamond&Related Materials,2010,19(7):787-791.
[35]FISCHER M,GSELL S,SCHRECK M,et al.Growth sector dependence and mechanism of stress formation in epitaxial diamond growth[J].Applied Physics Letters,2012,100(4):656.
[36]SCHRECK M,GSELL S,BRESCIA R,et al.Ion bombardment induced buried lateral growth:the key mechanism for the synthesis of single crystal diamond wafers[J].Sci Rep,2017,7:44462.
[37]VAISSIERE N,SAADA S,BOUTTEMY M,et al.Heteroepitaxial diamond on iridium:new insights on domain formation[J].Diamond and Related Materials,2013,36:16-25.
[2]陈乾旺,娄正松,王强,等.人工合成金刚石研究进展[J].物理,2005,34(3):199-204.
[3]徐军峰.六面顶压机控制系统的研制[D].天津:天津大学,2003.
[4]DAI B,ZHAO J,RALCHENKO V,et al.Thermal conductivity of freestanding CVD diamond films by growing on both nuclear and growth sides[J].Diamond and Related Materials,2017,76:9-13.
[5]YAO K,DAI B,YANG L,et al.Deposition of microcrystalline diamond films in H2 microwave plasma with graphite powder as hydrocarbon precursor[J].Thin Solid Films,2019,669:103-107.
[6]ZHU J,YAO K,DAI B,et al.Diamond deposition on graphite in hydrogen microwave plasma[J].Journal of Coating Science and Technology,2018,5(1):12-18.
[7]YAO K,DAI B,RALCHENKO V,et al.Diamond films and particles growth in hydrogen microwave plasma with graphite solid precursor:optical emission spectroscopy study[J].Diamond and Related Materials,2018,82:33-40.
[8]ZHU J,ZHAO H,JIANG C,et al.Boron doped amorphous diamond window layer deposited by filtered arc for amorphous silicon alloy p-i-n solar cells[J].Solar Energy Materials and Solar Cells,2009,93(9):1652-1656.
[9]ZHU J,HAN J,LIU A,et al.Mechanical properties and Raman characterization of amorphous diamond films as a function of film thickness[J].Surface and Coatings Technology,2007,201(15):6667-6669.
[10]ZHU J,HAN J,HAN X,et al.Optical properties of amorphous diamond films evaluated by non-destructive spectroscopic ellipsometry[J].Optical Materials,2006,28(5):473-479.
[11]HALL H T.Ultra-high-pressure,high-temperature apparatus:the“belt”[J].Review of Scientific Instruments,1960,31(2):125-131.
[12]D′HAENENS-JOHANSSON U F S,KATRUSHA A,MOE K S,et al.Large colorless HPHT-grown synthetic gem diamonds from New Diamond Technology,Russia[J].Gems&Gemology,2015,51(3):260-279.
[13]罗锡裕,徐燕军,刘一波.中国人造金刚石的发展及其关键技术的进步[J].粉末冶金工业,2016,26(1):1-13.
[14]吕继磊.MPCVD制备大颗粒金刚石晶粒的研究[D].武汉:武汉工程大学,2013.
[15]SMITH J A,ROSSER K N,YAGI H,et al.Diamond deposition in a DC-arc jet CVD system:investigations of the effects of nitrogen addition[J].Diamond&Related Materials,2001,10(3-7):370-375.
[16]阳硕,满卫东,赵彦君,等.MPCVD法合成单晶金刚石的研究及应用进展[J].真空与低温,2015(3):131-138.
[17]JANSSEN G,GILING L J.“Mosaic”growth of diamond[J].Diamond and Related Materials,1995,4(7):1025-1031.
[18]SCHERMER J J,DE THEIJE F K,GILING L J.Mosaic growth of diamond:a study of homoepitaxial flame deposition and etching of{001}-oriented diamond layers[J].Journal of Crystal Growth,1996,165(4):387-401.
[19]FINDELING-DUFOUR C,GICQUEL A,CHIRON R.Growth of large single-crystal diamond layers:analysis of the junctions between adjacent diamonds[J].Diamond and Related Materials,1998,7(7):986-998.
[20]TALLAIRE A,ACHARD J,SILVA F,et al.Growth of large size diamond single crystals by plasma assisted chemical vapour deposition:recent achievements and remaining challenges[J].Comptes Rendus Physique,2013,14(2):169-184.
[21]MEGURO T,HIDA A,SUZUKI M,et al.Creation of nanodiamonds by single impacts of highly charged ions upon graphite[J].Applied Physics Letters,2001,79(23):3866-3868.
[22]YAMADA H,CHAYAHARA A,MOKUNO Y,et al.Fabrication of 1inch mosaic crystal diamond wafers[J].Appl Phys Express,2010,3:051301.
[23]YAMADA H,CHAYAHARA A,MOKUNO Y,et al.Developments of elemental technologies to produce inch-size single-crystal diamond wafers[J].Diam Relat Mater,2011,20:616-619.
[24]SHU G,DAI B,RALCHENKO V G,et al.Epitaxial growth of mosaic diamond:mapping of stress and defects in crystal junction with a confocal Raman spectroscopy[J].Journal of Crystal Growth,2017,463:19-26.
[25]SHU G,DAI B,RALCHENKO V G,et al.Vertical-substrate epitaxial growth of single-crystal diamond by microwave plasma-assisted chemical vapor deposition[J].Journal of Crystal Growth,2018,486:104-110.
[26]SHU G,DAI B,RALCHENKO V G,et al.Growth of threedimensional diamond mosaics by microwave plasma-assisted chemical vapor deposition[J].CrystEngComm,2017,20(7):198-203.
[27]YOSHIKAWA M,ISHIDA H,ISHITANI A,et al.Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobe[J].Applied Physics Letters,1990,57(5):428-430.
[28]JENG D G,TUAN H S,SALAT R F,et al.Oriented cubic nucleations and local epitaxy during diamond growth on silicon{100}substrates[J].Applied Physics Letters,1990,56(20):1968.
[29]YUGO S,KANAI T,KIMURA T,et al.Generation of diamond nuclei by electric field in plasma chemical vapor deposition[J].Applied Physics Letters,1991,58(10):1036-1038.
[30]CHEN Q,YANG J,LIN Z.Synthesis of oriented textured diamond films on silicon via hot filament chemical vapor deposition[J].Applied Physics Letters,1995,67(13):1853-1855.
[31]SCHRECK M,ROLL H,STRITZKER B.Diamond/Ir/SrTiO3:Amaterial combination for improved heteroepitaxial diamond films[J].Applied Physics Letters,1999,74(5):650-652.
[32]GSELL S,BERNER S,BRUGGER T,et al.Comparative electron diffraction study of the diamond nucleation layer on Ir(001)[J].Diamond&Related Materials,2008,17(7):1029-1034.
[33]GSELL S,FISCHER M,BAUER T,et al.Yttria-stabilized zirconia films of different composition as buffer layers for the deposition of epitaxial diamond/Ir layers on Si(001)[J].Diamond&Related Materials,2006,15(4):479-485.
[34]STEHL C,SCHRECK M,FISCHER M,et al.Thermal diffusivity of heteroepitaxial diamond films:experimental setup and measurements[J].Diamond&Related Materials,2010,19(7):787-791.
[35]FISCHER M,GSELL S,SCHRECK M,et al.Growth sector dependence and mechanism of stress formation in epitaxial diamond growth[J].Applied Physics Letters,2012,100(4):656.
[36]SCHRECK M,GSELL S,BRESCIA R,et al.Ion bombardment induced buried lateral growth:the key mechanism for the synthesis of single crystal diamond wafers[J].Sci Rep,2017,7:44462.
[37]VAISSIERE N,SAADA S,BOUTTEMY M,et al.Heteroepitaxial diamond on iridium:new insights on domain formation[J].Diamond and Related Materials,2013,36:16-25.