电感耦合等离子体刻蚀反应烧结碳化硅工艺研究
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摘要
为获得超光滑的反应烧结碳化硅(RB-Si C)材料表面,以提高其表面反射率,利用电感耦合等离子体(ICP)刻蚀技术对RB-Si C进行刻蚀.通过正交实验研究了射频功率、偏压功率和刻蚀气体(CF_4/O_2)流量比三个因素对刻蚀速率和表面粗糙度的影响程度.分析了偏压功率这一单因素对刻蚀速率和表面粗糙度的影响规律.结果表明:偏压功率对刻蚀速率和表面粗糙度的影响程度最大,其次为射频功率,刻蚀气体(CF_4/O_2)流量比对刻蚀速率和表面粗糙度的影响最小;刻蚀最优射频功率为150 W,最优偏压功率为50 W,最优CF_4/O_2流量比为25∶5,最优工作压强为1 Pa.
In order to obtain ultra smooth surface of reaction bonded-Si C( RB-Si C) material to improve the surface reflectivity,RB-Si C etching is studied by inductive coupled plasma( ICP) etching technique. The effects of three factors of RF power,bias power and CF_4/O_2 flow ratio on etching rate and surface roughness were investigated by orthogonal experiment. The influence of single factor of bias power on etching rate and surface roughness was analyzed. The results show that the bias power has the greatest influence on the etching rate,surface roughness follows the RF power,and the ratio of the etching gas( CF_4/O_2) flow rate has the smallest influence; Optimal etching process parameters are as follows: RF 150 W,bias power 50 W,flow ratio 25 ∶ 5 of CF_4/O_2,working pressure 1 Pa.
In order to obtain ultra smooth surface of reaction bonded-Si C( RB-Si C) material to improve the surface reflectivity,RB-Si C etching is studied by inductive coupled plasma( ICP) etching technique. The effects of three factors of RF power,bias power and CF_4/O_2 flow ratio on etching rate and surface roughness were investigated by orthogonal experiment. The influence of single factor of bias power on etching rate and surface roughness was analyzed. The results show that the bias power has the greatest influence on the etching rate,surface roughness follows the RF power,and the ratio of the etching gas( CF_4/O_2) flow rate has the smallest influence; Optimal etching process parameters are as follows: RF 150 W,bias power 50 W,flow ratio 25 ∶ 5 of CF_4/O_2,working pressure 1 Pa.
引文
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[16]王颖男,杭凌侠,胡敏达.等离子体加工光学元件工艺研究[J].表面技术,2008,37(1):51.WANG Yingnan,HANG Lingxia,HU Minda.Super Smooth Surface Fabrication Processes by Plasma Etching[J].Surface Technology,2008,37(1):51.(in Chinese)
[17]张庆钊,谢常青,刘明,等.ICP等离子体刻蚀系统射频偏压的实验研究[J].半导体学报,2008,29(5):980.ZHANG Qingzhao,XIE Changqing,LIU Ming,et al.RF Bias Voltage in ICP Etch Systems[J].Journal of Semiconductors,2008,29(5):980.(in Chinese)
[18]康健.PVD改性RB-Si C反射镜表面缺陷处理方法研究[D].长春:中国科学院长春光学精密机械与物理研究所,2014.KANG Jian.Study on Surface Defect Treatment of PVD Modified RB-Si C Mirror[D].Changchun:Changchun Institute of Optics,Fine Mechanics and Physics,CAS,2014.(in Chinese)
[19]申振峰,高劲松,陈红,等.两种常用碳化硅反射镜基底表面改性的研究[J].光学技术,2009,35(1):21.SHEN Zhenfeng,GAO Jinsong,CHEN Hong,et al.Study on Surface Modification of Two Kinds of Commonly Used Si C Mirror[J].Optical Technique,2009,35(1):21.(in Chinese)
[2]ZHANG B Z,ZHANG Z Y.Brazing RB-Si C Used in Large Aperture Space Optical System[J].Advanced Materials Research,2011,337:336.
[3]FREDERICO S,HIBERT C,FRITSCHI R,et al.Silicon Sacrificial Layer Dry Etching(SSLDE)for Free-standing RF MEMS Architectures[C]//IEEE the Sixteenth International Conference on Micro Electro Mechanical Systems.Kyoto:IEEE,2003:570.
[4]贾护军,杨银堂,柴常春,等.Si C材料的低速率浅刻蚀工艺研究[J].真空科学与技术学报,2009,29(4):440.JIA Hujun,YANG Yintang,CHAI Changchun,et al.Shallow Etching Rate and Roughness of Etched Si C Surfaces[J].Journal of Vacuum Science and Technology,2009,29(4):440.(in Chinese)
[5]崔海波,梁庭,熊继军,等.碳化硅ICP刻蚀速率及表面形貌研究[J].仪表技术与传感器,2015(9):1.CUI Haibo,LIANG Ting,XIONG Jijun,et al.Study on Etch Rate and Surface Morphology of Silicon Carbide by ICP[J].Instrument Technique and Sensor,2015(9):1.(in Chinese)
[6]刘雨涛,梁庭,王涛龙,等.碳化硅薄膜的ICP浅刻蚀工艺研究[J].传感器与微系统,2016,35(2):46.LIU Yutao,LIANG Ting,WANG Taolong,et al.Study on ICP Shallow Etching Process of Si C Thin Film[J].Transducer and Microsystem Technologies,2016,35(2):46.(in Chinese)
[7]PLANK N O V,BLAUW M A,DRIFT E W J M,et al.The Etching of Silicon Carbide in Inductively Coupled SF6/O2Plasma[J].Journal of Physics D:Applied Physics,2003,36(5):482.
[8]LEERUNGNAWARAT P,LEE K P,PEARTON S J,et al.Comparison of F2Plasma Chemistries for Deep Etching of Si C[J].Journal of Electronic Materials,2001,30(3):202.
[9]吕英.ICP刻蚀Si C机制及表面损伤的研究[D].厦门:厦门大学,2008.LYU Ying.Mechanism and Surface Damage in Inductive Coupled Plasma Etching of Si C[D].Xiamen:Xiamen University,2008.(in Chinese)
[10]丁瑞雪,杨银堂,韩茹.6H-Si C体材料在SF6/O2混合气体中的ICP刻蚀[J].固体电子学研究与进展,2009,29(3):343.DING Ruixue,YANG Yintang,HAN Ru.The Etching of Single Crystal 6H-Si C in Inductively Coupled SF6/O2Plasma[J].Research&Progress of Solid State Electronics,2009,29(3):343.(in Chinese)
[11]侯化国,王玉民.正交试验法[M].长春:吉林人民出版社,1986.HOU Huaguo,WANG Yumin.Orthogonal Test Method[M].Changchun:Jilin People’s Publishing House,1986.(in Chinese)
[12]申振峰,高劲松,王笑夷,等.RB-Si C基底反射镜表面改性工艺的改进[J].光学精密工程,2009,17(5):969.SHEN Zhenfeng,GAO Jinsong,WANG Xiaoyi,et al.Improvement of Technological Process for Surface Modification of RB-Si C Mirror[J].Optics and Precision Engineering,2009,17(5):969.(in Chinese)
[13]刘瑞江,张业旺,闻崇炜,等.正交试验设计和分析方法研究[J].实验技术与管理,2010,27(9):52.LIU Ruijiang,ZHANG Yewang,WEN Chongwei,et al.Study on the Design and Analysis Methods of Orthogonal Experiment[J].Experimental Technology and Management,2010,27(9):52.(in Chinese)
[14]刘卫国,田园.等离子体抛光对表面粗糙度的影响[J].西安工业大学学报,2010,30(2):108.LIU Weiguo,TIAN Yuan.Research on Variation of Surface Roughness by Plasma Polishing Process[J].Journal of Xi’an Technological University,2010,30(2):108.(in Chinese)
[15]王承遇,李松基,陶瑛,等.超光滑超精密玻璃抛光新技术[J].玻璃,2009,36(10):33.WANG Chengyu,LI Songji,TAO Ying,et al.New Super-smooth and Super-precision Polishing Technology for Glass Surface[J].Glass,2009,36(10):33.(in Chinese)
[16]王颖男,杭凌侠,胡敏达.等离子体加工光学元件工艺研究[J].表面技术,2008,37(1):51.WANG Yingnan,HANG Lingxia,HU Minda.Super Smooth Surface Fabrication Processes by Plasma Etching[J].Surface Technology,2008,37(1):51.(in Chinese)
[17]张庆钊,谢常青,刘明,等.ICP等离子体刻蚀系统射频偏压的实验研究[J].半导体学报,2008,29(5):980.ZHANG Qingzhao,XIE Changqing,LIU Ming,et al.RF Bias Voltage in ICP Etch Systems[J].Journal of Semiconductors,2008,29(5):980.(in Chinese)
[18]康健.PVD改性RB-Si C反射镜表面缺陷处理方法研究[D].长春:中国科学院长春光学精密机械与物理研究所,2014.KANG Jian.Study on Surface Defect Treatment of PVD Modified RB-Si C Mirror[D].Changchun:Changchun Institute of Optics,Fine Mechanics and Physics,CAS,2014.(in Chinese)
[19]申振峰,高劲松,陈红,等.两种常用碳化硅反射镜基底表面改性的研究[J].光学技术,2009,35(1):21.SHEN Zhenfeng,GAO Jinsong,CHEN Hong,et al.Study on Surface Modification of Two Kinds of Commonly Used Si C Mirror[J].Optical Technique,2009,35(1):21.(in Chinese)
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