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砷化镓基近红外大功率半导体激光器的发展及应用
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  • 英文篇名:Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers
  • 作者:袁庆贺 ; 井红旗 ; 张秋月 ; 仲莉 ; 刘素平 ; 马骁宇
  • 英文作者:Yuan Qinghe;Jing Hongqi;Zhang Qiuyue;Zhong Li;Liu Suping;Ma Xiaoyu;National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences;College of Materials Science and Optoelectronics,University of Chinese Academy of Sciences;
  • 关键词:激光器 ; 大功率半导体激光器 ; 输出功率 ; 光束质量 ; 可靠性
  • 英文关键词:lasers;;high power semiconductor lasers;;output power;;beam quality;;reliability
  • 中文刊名:JGDJ
  • 英文刊名:Laser & Optoelectronics Progress
  • 机构:中国科学院半导体研究所光电子器件国家工程研究中心;中国科学院大学材料科学与光电技术学院;
  • 出版日期:2019-02-25
  • 出版单位:激光与光电子学进展
  • 年:2019
  • 期:v.56;No.639
  • 基金:大功率半导体激光器技术(41414010302)
  • 语种:中文;
  • 页:JGDJ201904003
  • 页数:14
  • CN:04
  • ISSN:31-1690/TN
  • 分类号:35-48
摘要
综述了世界各国近年来在大功率半导体激光器方面所取得的研究成果,重点介绍了砷化镓基近红外大功率半导体激光器在输出功率、亮度、电光转换效率、光束质量、寿命与可靠性方面的研究进展。结合目前市场分析,详细阐述了半导体激光器的应用前景,展望了未来大功率半导体激光器的发展趋势。
        The recent research achievements on high-power semiconductor lasers in various countries of the world are reviewed.The research progress is mainly introduced in terms of output power,brightness,electro-optical conversion efficiency,beam quality,lifetime,and reliability of GaAs-based near-infrared high-power semiconductor lasers.Combined with the current market analysis,the application prospect of these semiconductor lasers is elaborated.The development trend of high-power semiconductor lasers in the future is forecasted.
引文
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