976 nm宽条形高功率半导体激光器的光束质量M~2评价
|
摘要
为了提高976 nm宽条形高功率半导体激光器的光束质量,基于严格的二阶矩理论搭建了一套适用于高功率半导体激光器的光束质量检测装置。利用该装置测量了实验室研制的976 nm宽条形高功率半导体激光器在1～10 A工作电流下的束腰位置、束腰尺寸和远场发散角。实验结果表明,随着电流从1 A增加到10A,快轴方向束宽及远场发散角由于反导引效应有微小增加,但由于垂直方向较强的折射率导引机制使得光束参数变化很小,光束质量因子M~2仅从1. 32增加到1. 48,光束质量基本不变。慢轴方向由于反导引效应及热透镜效应而导致高阶模式激射,使得束宽及远场发散角随工作电流增加逐渐增大,光束质量因子M~2从5. 44增加到11. 76,光束质量逐渐变差。傍轴光束定义及非傍轴光束定义下的光束质量因子测试结果表明,在快轴方向,两者差别较大,不能使用傍轴光束定义近似计算;在慢轴方向,两者近似相等,可以使用傍轴光束定义近似计算。
In order to improve the beam quality of 976 nm wide stripe high power semiconductor laser,a beam quality measurement setup for high power semiconductor lasers is constructed based on the strict second moment theory. This setup is used to measure the beam waist position,beam waist size and far field divergence angle of 976 nm wide stripe high power semiconductor lasers prepared by our lab. The experimental result shows that with the increase of current from 1 A to 10 A,the fast axis beam width and far-field divergence angle increase slightly due to the anti-guidance effect,but the beam parameters change very small because of the strong refractive index guidance mechanism in the vertical direction. The beam quality is almost unchanged,when the beam quality factor M~2 is only increased from 1. 32 to 1. 48. In slow axis direction,the beam width and far field divergence angle increase gradually with the increase of operating current due to the high-order mode lasing caused by the anti-guidance effect and the thermal lens effect. The beam quality becomes worse,when the beam quality factor M~2 is increased from 5. 44 to 11. 76. The difference of the beam quality factor is compared with the definition of paraxial beam and non-paraxial beam. The results show that there is an obvious difference by different beam definitions in the fast axis direction and the paraxial beam definition is not suitable for the calculation. In the direction of slow axis,the results are approximately equal and can be approximately calculated by using the paraxial beam definition.
In order to improve the beam quality of 976 nm wide stripe high power semiconductor laser,a beam quality measurement setup for high power semiconductor lasers is constructed based on the strict second moment theory. This setup is used to measure the beam waist position,beam waist size and far field divergence angle of 976 nm wide stripe high power semiconductor lasers prepared by our lab. The experimental result shows that with the increase of current from 1 A to 10 A,the fast axis beam width and far-field divergence angle increase slightly due to the anti-guidance effect,but the beam parameters change very small because of the strong refractive index guidance mechanism in the vertical direction. The beam quality is almost unchanged,when the beam quality factor M~2 is only increased from 1. 32 to 1. 48. In slow axis direction,the beam width and far field divergence angle increase gradually with the increase of operating current due to the high-order mode lasing caused by the anti-guidance effect and the thermal lens effect. The beam quality becomes worse,when the beam quality factor M~2 is increased from 5. 44 to 11. 76. The difference of the beam quality factor is compared with the definition of paraxial beam and non-paraxial beam. The results show that there is an obvious difference by different beam definitions in the fast axis direction and the paraxial beam definition is not suitable for the calculation. In the direction of slow axis,the results are approximately equal and can be approximately calculated by using the paraxial beam definition.
引文
[1]王立军,彭航宇,张俊,等.高功率高亮度半导体激光器合束进展[J].红外与激光工程,2017,46(4):0401001-1-10.WANG L J,PENG H Y,ZHANG J,et al..Development of beam combining of high power high brightness diode lasers[J].Infrared Laser Eng.,2017,46(4):0401001-1-10.(in Chinese)
[2]乔忠良.高亮度大功率半导体激光器研究[D].长春:长春理工大学,2011:1-10.QIAO Z L.Research on High-power High-brightness Semiconductor Lasers[D].Changchun:Changchun University of Science and Technology,2011:1-10.(in Chinese)
[3]韩志鹏.半导体激光器光束质量评价方法与光束整形技术的研究[D].长春:吉林大学,2008:1-2.HAN Z P.Research on Evaluating Methods for Beam Quality and Beam Shaping Technology of Semiconductor Laser[D].Changchun:Jilin University,2008:1-2.(in Chinese)
[4]郭瑞,杨华军,胡渝,等.光通信中激光发散小角度远场焦斑测量法[J].电子科技大学学报,2006,35(4):437-439.GUO R,YANG H J,HU Y,et al..Far-field focus facula measurement method concerning small-angle of laser divergence in optical communication[J].J.Univ.Electron.Sci.Technol.China,2006,35(4):437-439.(in Chinese)
[5]王科伟,孙晓泉,马超杰.高能激光武器系统中的光束质量评价及应用[J].激光与电子学进展,2005,42(8):13-16.WANG K W,SUN X Q,MA C J.Evaluation and application of high energy laser weapon system beam quality[J].Laser Optoelectr.Prog.,2005,42(8):13-16.(in Chinese)
[6]熊雪霜.激光束参数和光束质量测量系统[D].长春:吉林大学,2007.XIONG X S.The Measuring System of Laser Beam Parameter and Quality[D].Changchun:Jilin University,2007.(in Chinese)
[7]刘泽金,陆启生,赵伊君.高能非稳腔激光器光束质量评价的探讨[J].中国激光,1998,25(3):193-196.LIU Z J,LU Q S,ZHAO Y J.Study of evaluating beam quality of high energy lasers with unstable resonators[J].Chin.J.Lasers,1998,25(3):193-196.(in Chinese)
[8]ROSS T S,LATHAM W P.Appropriate measures and consistent standard for high energy laser beam quality[J].J.Direct Energy,2006,2:22-58.
[9]MAHAJAN V N.Strehl ratio for primary aberrations:some analytical results for circular and annular pupils[J].J.Opt.Soc.Am.,1982,72(9):1258-1266.
[10]杜祥琬.实际强激光远场靶面上光束质量的评价因素[J].中国激光,1997,24(4):327-332.DU X W.Factors for evaluating beam guality of a real high power laser on the target surface in far field[J].Chin.J.Lasers,1997,24(4):327-332.(in Chinese)
[11]SIEGMAN A E.New developments in laser resonators[J].SPIE,1990,1224:2-14.
[12]SIEGMAN A E.High-power laser beams:defining,measuring and optimizing transverse beam quality[J].SPIE,1993,1810:758-765.
[13]RUFF J A,SIEGMAN A E.Measurement of beam quality degradation due to spherical aberration in a simple lens[J].Opt.Quantum Electron.,1994,26(6):629-632.
[14]SIEGMAN A E.How to(maybe)measure laser beam quality[J].OSA Trends in Optics and Photonics,1998:doi:10.1364/DLAI.1998.MQ1.
[15]王立军,彭航宇,张俊.大功率半导体激光合束进展[J].中国光学,2015,8(4):517-534.WANG L J,PENG H Y,ZHANG J.Advance on high power diode laser coupling[J].Chin.Opt.,2015,8(4):517-534.(in Chinese)
[16]吴翔.半导体激光光束的特性及其耦合技术[D].杭州:浙江大学,2004:4-7.WU X.Beam Properties and Beam Combining Technique For Semiconductor Lasers[D].Hangzhou:Zhejiang University,2004:4-7.(in Chinese)
[17]李婧.半导体激光器光束的非傍轴传输特性[D].西安:西安电子科技大学,2011:10-12.LI J.Study on Nonparaxial Propagation Characteristic of Laser Diode Beam[D].Xi'an:Xidian University,2011:10-12.(in Chinese)
[18]PORRAS M A.The best quality optical beam beyond the paraxial approximation[J].Opt.Commun.,1994,111(3-4):338-349.
[19]PORRAS M A.Non-paraxial vectorial moment theory of light beam propagation[J].Opt.Commun.,1996,127(1-3):79-95.
[20]International Organization for Standardization.ISO 11146-2:2005 Lasers and Laser-related Equipment:Test Methods for Laser Beam Widths,Divergence Angles and Beam Propagation Ratios-Part 2:General Astigmatic Beams[S].2005.
[2]乔忠良.高亮度大功率半导体激光器研究[D].长春:长春理工大学,2011:1-10.QIAO Z L.Research on High-power High-brightness Semiconductor Lasers[D].Changchun:Changchun University of Science and Technology,2011:1-10.(in Chinese)
[3]韩志鹏.半导体激光器光束质量评价方法与光束整形技术的研究[D].长春:吉林大学,2008:1-2.HAN Z P.Research on Evaluating Methods for Beam Quality and Beam Shaping Technology of Semiconductor Laser[D].Changchun:Jilin University,2008:1-2.(in Chinese)
[4]郭瑞,杨华军,胡渝,等.光通信中激光发散小角度远场焦斑测量法[J].电子科技大学学报,2006,35(4):437-439.GUO R,YANG H J,HU Y,et al..Far-field focus facula measurement method concerning small-angle of laser divergence in optical communication[J].J.Univ.Electron.Sci.Technol.China,2006,35(4):437-439.(in Chinese)
[5]王科伟,孙晓泉,马超杰.高能激光武器系统中的光束质量评价及应用[J].激光与电子学进展,2005,42(8):13-16.WANG K W,SUN X Q,MA C J.Evaluation and application of high energy laser weapon system beam quality[J].Laser Optoelectr.Prog.,2005,42(8):13-16.(in Chinese)
[6]熊雪霜.激光束参数和光束质量测量系统[D].长春:吉林大学,2007.XIONG X S.The Measuring System of Laser Beam Parameter and Quality[D].Changchun:Jilin University,2007.(in Chinese)
[7]刘泽金,陆启生,赵伊君.高能非稳腔激光器光束质量评价的探讨[J].中国激光,1998,25(3):193-196.LIU Z J,LU Q S,ZHAO Y J.Study of evaluating beam quality of high energy lasers with unstable resonators[J].Chin.J.Lasers,1998,25(3):193-196.(in Chinese)
[8]ROSS T S,LATHAM W P.Appropriate measures and consistent standard for high energy laser beam quality[J].J.Direct Energy,2006,2:22-58.
[9]MAHAJAN V N.Strehl ratio for primary aberrations:some analytical results for circular and annular pupils[J].J.Opt.Soc.Am.,1982,72(9):1258-1266.
[10]杜祥琬.实际强激光远场靶面上光束质量的评价因素[J].中国激光,1997,24(4):327-332.DU X W.Factors for evaluating beam guality of a real high power laser on the target surface in far field[J].Chin.J.Lasers,1997,24(4):327-332.(in Chinese)
[11]SIEGMAN A E.New developments in laser resonators[J].SPIE,1990,1224:2-14.
[12]SIEGMAN A E.High-power laser beams:defining,measuring and optimizing transverse beam quality[J].SPIE,1993,1810:758-765.
[13]RUFF J A,SIEGMAN A E.Measurement of beam quality degradation due to spherical aberration in a simple lens[J].Opt.Quantum Electron.,1994,26(6):629-632.
[14]SIEGMAN A E.How to(maybe)measure laser beam quality[J].OSA Trends in Optics and Photonics,1998:doi:10.1364/DLAI.1998.MQ1.
[15]王立军,彭航宇,张俊.大功率半导体激光合束进展[J].中国光学,2015,8(4):517-534.WANG L J,PENG H Y,ZHANG J.Advance on high power diode laser coupling[J].Chin.Opt.,2015,8(4):517-534.(in Chinese)
[16]吴翔.半导体激光光束的特性及其耦合技术[D].杭州:浙江大学,2004:4-7.WU X.Beam Properties and Beam Combining Technique For Semiconductor Lasers[D].Hangzhou:Zhejiang University,2004:4-7.(in Chinese)
[17]李婧.半导体激光器光束的非傍轴传输特性[D].西安:西安电子科技大学,2011:10-12.LI J.Study on Nonparaxial Propagation Characteristic of Laser Diode Beam[D].Xi'an:Xidian University,2011:10-12.(in Chinese)
[18]PORRAS M A.The best quality optical beam beyond the paraxial approximation[J].Opt.Commun.,1994,111(3-4):338-349.
[19]PORRAS M A.Non-paraxial vectorial moment theory of light beam propagation[J].Opt.Commun.,1996,127(1-3):79-95.
[20]International Organization for Standardization.ISO 11146-2:2005 Lasers and Laser-related Equipment:Test Methods for Laser Beam Widths,Divergence Angles and Beam Propagation Ratios-Part 2:General Astigmatic Beams[S].2005.