半导体器件用显微红外热成像技术原理及应用
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摘要
对用于半导体器件温度测量的显微红外热成像技术的原理及应用情况进行了总结。显微红外热成像技术基于普朗克黑体辐射定律,依靠测量被测件表面发出的红外辐射确定温度。在中红外波段下,该技术具备最高1. 9μm的空间分辨力,配合发射率修正技术,能够测量非黑体的微小半导体器件的真实温度。该技术具备稳态温度成像测量能力、连续毫秒级甚至微秒级的高时间分辨力成像测量能力和脉冲条件下器件温度测量能力。在各类半导体器件不同工作条件下的温度测量方面得到了广泛的应用。
The principles and applications of infrared micro-thermography technique for semiconductor device temperature testing were reviewed. This technique is based on Planck blackbody radiance law,and it determines the temperature by measuring the infrared radiation from the surface of the object under test. In the mid-infrared waveband,the highest spatial resolution of 1. 9 μm had been realized,and combining with the emissivity correction,the infrared micro-thermography technique can measure the true temperature of micro semiconductor devices. This technique is capable of measuring the stable and continuously dynamic temperature thermography,with milliseconds or even microseconds of temporal resolution,and the device temperature under pulsed conditions. It has been widely used in temperature testing for various semiconductor devices under different working conditions.
The principles and applications of infrared micro-thermography technique for semiconductor device temperature testing were reviewed. This technique is based on Planck blackbody radiance law,and it determines the temperature by measuring the infrared radiation from the surface of the object under test. In the mid-infrared waveband,the highest spatial resolution of 1. 9 μm had been realized,and combining with the emissivity correction,the infrared micro-thermography technique can measure the true temperature of micro semiconductor devices. This technique is capable of measuring the stable and continuously dynamic temperature thermography,with milliseconds or even microseconds of temporal resolution,and the device temperature under pulsed conditions. It has been widely used in temperature testing for various semiconductor devices under different working conditions.
引文
[1] Semiconductor Thermal Measurement and Management Symposium[C]//Dallas,TX,USA,2006:199-204.
[2] Blackburn D L. Blackburn Temperature Measurements of Semiconductor Devices-A Review[C]//IEEE Semiconductor Thermal Measurement and Management Symposium,2004,20:70-80.
[3]蔡涛,段善旭,康勇.半导体器件热特性的光学测量技术及其研究进展[J].激光与光电子学进展,2008,45(6):51-58.
[4]Ailani1 S R,Yagoub M C E. Review of Non Contact Thermal Mapping Methods for Electronic Systems Application[C]//2008 Internatioal Symposium on Telecommunications,2008:821-824.
[5]梁法国,翟玉卫,吴爱华.用显微红外热成像技术分析功率器件可靠性[J].微纳电子技术,2011,48(5):338-342.
[6]陈波若.红外系统[M].北京:国防工业出版社,1988.
[7]McDonald J D. Optical Microscopy[EB/OL]. http://www.molecularexpressions. com. 2004.
[8]JEP138 User Guidelines for IR Thermal Imaging Determination of Die Temperature[S].
[9]翟玉卫,梁法国,刘岩,等.空间分辨力对半导体器件光学测温结果的影响[J].红外,2016,37(11):36-41.
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[11] Lidback C A. Scanning Infrared Microscopy Techniques for Semiconductor Thermal Analysis[C]//Reliability Physics Symposium,1979:183-189.
[12]Hefner A,Berning D,Blackburn D,et al. A High-Speed Thermal Imaging System For Semiconductor Device Analysis[C]//IEEE Semiconductor Thermal Measurement and Management Symposium,2001:43-49.
[13]何晓琦,费庆宇.半导体器件与IC失效分析的有力工具——介绍显微红外热像仪Infra Scope和光辐射显微镜EMM1630[J].电子产品可靠性与环境试验,1996(2):60-61.
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[15]Lény Baczkowski,Dominique Carisetti,Jean-Claude Jacquet,et al. Thermal Characterization of High Power Al Ga N/Ga N HEMTs Using Infra Red Microscopy and Thermoreflectance[C]//International Workshop on Thermal Investigations of ICs and Systems,2014:1-6.
[16]Andrei Sarua,Hangfeng Ji,Martin Kuball,et al. Integrated Micro-Raman/Infrared Thermography Probe for Monitoring of Self-Heating in Al Ga N/Ga N Transistor Structures[J]. IEEE Transactions on Electron Devices, 2006, 53(10):2438-2447.
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[18]Chang K S,Sun C Y,Kim J Y,et al. Precise Temperature Mapping of Ga N-Based LEDs by Quantitative Infrared MicroThermography[J]. Sensors 2012,12(4):4648-4660
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[20]郑世棋,翟玉卫,刘霞美.微电子器件红外测温中发射率测量方法研究[J].红外,2015,36(9):25-29.
[21] Kuball1 M,Sarual A,Ji H,et al. Integrated Raman-IR Thermography on Al Ga N/Ga N Transistors[C]//IEEE MTT-S International Microwave Symposium,2006:1339-1342.
[22]Singhal S,Li T,Chaudhari A,et al. Reliability of Large Periphery Ga N-on-Si HFETs[J]. Microelectronics Reliability,2005,46(8):1247-1253.
[23] Prejs A,Wood S,Pengelly R,et al. Thermal analysis and its application to high power Ga N HEMT amplifiers[C]//MTT'09. IEEE MTT-S International. Microwave Symposium Digest,2009:917-920.
[24]王因生,陶有迁,徐全胜,等. L波段硅脉冲功率管52000器件小时的脉冲射频加速寿命试验[J].固体电子学研究与进展,2011,31(5):473-477.
[25]房迅雷,姜伟卓,严伟.红外热像技术在微波多芯片组件中的应用[J].现代雷达,2004,26(1):68-70.
[26]郭春生,李世伟,任云翔,等.加载功率与壳温对Al Ga N/Ga N高速电子迁移率晶体管器件热阻的影响[J].物理学报,2016,65(7):265-270.
[27]Mahalingam M,Mares E,Brakensiek W,et al. High Power Microwave Device Temperature Measurement-Methodology and Applications for Pulsed Devices[C]//2007 IEEE MTT-S International,2007:1189-1192.
[28]Furstenberga R,Kendzioraa C A,Stepnowskia S V,et al.Infrared micro-thermography of an actively heated preconcetrator device[Z].
[29] Albright G C, Stump J A, Li C P, et al. Emissivity Corrected Infrared Thermal Pulse Measurement on Microscopic Semiconductor Targets[C]//Proc. SPIE,2001,4360:103–111.
[30] Miranda E,Riccio M,Falco G D,et al. Assessing the Spatial Correlation and Conduction State of Breakdown Spot Patterns in Pt/Hf O2/Pt Structures Using Transient Infrared Thermography[J]. Journal of Applied Physics,2014,115(17):174502-174502-6.
[31]高美静,许杰,金伟其,等.显微热成像技术研究现状与展望[J].激光与红外,2017,47(1):13-18.
[32]岳静静,吴之茂,木二珍,等.红外显微热成像系统研究及应用[J].红外技术,2017,39(11):973-978.
[33]高美静,范祥瑞,顾海华,等.电子器件无损检测光学微扫描显微热成像系统[J].激光与红外,2013,43(7):779-784.
[34]杨丽媛.氮化镓基HEMT器件高场退化效应与热学问题研究[D].西安:西安电子科技大学,2013:69-104.
[35]Maize K,Pavlidis G,Heller E,et al. High Resolution Thermal Characterization and Simulation of Power Al Ga N/Ga N HEMTs Using Micro-Raman Thermography and 800 Picosecond Transient Thermoreflectance Imaging[C]//Compound Semiconductor Integrated Circuit Symposium. IEEE,2014:1-8.
[2] Blackburn D L. Blackburn Temperature Measurements of Semiconductor Devices-A Review[C]//IEEE Semiconductor Thermal Measurement and Management Symposium,2004,20:70-80.
[3]蔡涛,段善旭,康勇.半导体器件热特性的光学测量技术及其研究进展[J].激光与光电子学进展,2008,45(6):51-58.
[4]Ailani1 S R,Yagoub M C E. Review of Non Contact Thermal Mapping Methods for Electronic Systems Application[C]//2008 Internatioal Symposium on Telecommunications,2008:821-824.
[5]梁法国,翟玉卫,吴爱华.用显微红外热成像技术分析功率器件可靠性[J].微纳电子技术,2011,48(5):338-342.
[6]陈波若.红外系统[M].北京:国防工业出版社,1988.
[7]McDonald J D. Optical Microscopy[EB/OL]. http://www.molecularexpressions. com. 2004.
[8]JEP138 User Guidelines for IR Thermal Imaging Determination of Die Temperature[S].
[9]翟玉卫,梁法国,刘岩,等.空间分辨力对半导体器件光学测温结果的影响[J].红外,2016,37(11):36-41.
[10]McDonald J D,Albright G C. Microthermal imaging in the infrared[J]. electronics cooling,1997,3(1):26–29.
[11] Lidback C A. Scanning Infrared Microscopy Techniques for Semiconductor Thermal Analysis[C]//Reliability Physics Symposium,1979:183-189.
[12]Hefner A,Berning D,Blackburn D,et al. A High-Speed Thermal Imaging System For Semiconductor Device Analysis[C]//IEEE Semiconductor Thermal Measurement and Management Symposium,2001:43-49.
[13]何晓琦,费庆宇.半导体器件与IC失效分析的有力工具——介绍显微红外热像仪Infra Scope和光辐射显微镜EMM1630[J].电子产品可靠性与环境试验,1996(2):60-61.
[14]Albright G C,Stump J A,Mc Donald J D,et al. True Temperature Measurements on Microscopic Semiconductor Targets[C]//In Proc. SPIE Thermosense XXI,1999,3700:245–250.
[15]Lény Baczkowski,Dominique Carisetti,Jean-Claude Jacquet,et al. Thermal Characterization of High Power Al Ga N/Ga N HEMTs Using Infra Red Microscopy and Thermoreflectance[C]//International Workshop on Thermal Investigations of ICs and Systems,2014:1-6.
[16]Andrei Sarua,Hangfeng Ji,Martin Kuball,et al. Integrated Micro-Raman/Infrared Thermography Probe for Monitoring of Self-Heating in Al Ga N/Ga N Transistor Structures[J]. IEEE Transactions on Electron Devices, 2006, 53(10):2438-2447.
[17]朱德忠,顾毓沁,晋宏师,等.电子器件真实温度和发射率分布的红外测量[J]红外技术,2000,22(1):45-48.
[18]Chang K S,Sun C Y,Kim J Y,et al. Precise Temperature Mapping of Ga N-Based LEDs by Quantitative Infrared MicroThermography[J]. Sensors 2012,12(4):4648-4660
[19]GJB 548B-2005微电子器件试验方法和程序[S]. 2005.
[20]郑世棋,翟玉卫,刘霞美.微电子器件红外测温中发射率测量方法研究[J].红外,2015,36(9):25-29.
[21] Kuball1 M,Sarual A,Ji H,et al. Integrated Raman-IR Thermography on Al Ga N/Ga N Transistors[C]//IEEE MTT-S International Microwave Symposium,2006:1339-1342.
[22]Singhal S,Li T,Chaudhari A,et al. Reliability of Large Periphery Ga N-on-Si HFETs[J]. Microelectronics Reliability,2005,46(8):1247-1253.
[23] Prejs A,Wood S,Pengelly R,et al. Thermal analysis and its application to high power Ga N HEMT amplifiers[C]//MTT'09. IEEE MTT-S International. Microwave Symposium Digest,2009:917-920.
[24]王因生,陶有迁,徐全胜,等. L波段硅脉冲功率管52000器件小时的脉冲射频加速寿命试验[J].固体电子学研究与进展,2011,31(5):473-477.
[25]房迅雷,姜伟卓,严伟.红外热像技术在微波多芯片组件中的应用[J].现代雷达,2004,26(1):68-70.
[26]郭春生,李世伟,任云翔,等.加载功率与壳温对Al Ga N/Ga N高速电子迁移率晶体管器件热阻的影响[J].物理学报,2016,65(7):265-270.
[27]Mahalingam M,Mares E,Brakensiek W,et al. High Power Microwave Device Temperature Measurement-Methodology and Applications for Pulsed Devices[C]//2007 IEEE MTT-S International,2007:1189-1192.
[28]Furstenberga R,Kendzioraa C A,Stepnowskia S V,et al.Infrared micro-thermography of an actively heated preconcetrator device[Z].
[29] Albright G C, Stump J A, Li C P, et al. Emissivity Corrected Infrared Thermal Pulse Measurement on Microscopic Semiconductor Targets[C]//Proc. SPIE,2001,4360:103–111.
[30] Miranda E,Riccio M,Falco G D,et al. Assessing the Spatial Correlation and Conduction State of Breakdown Spot Patterns in Pt/Hf O2/Pt Structures Using Transient Infrared Thermography[J]. Journal of Applied Physics,2014,115(17):174502-174502-6.
[31]高美静,许杰,金伟其,等.显微热成像技术研究现状与展望[J].激光与红外,2017,47(1):13-18.
[32]岳静静,吴之茂,木二珍,等.红外显微热成像系统研究及应用[J].红外技术,2017,39(11):973-978.
[33]高美静,范祥瑞,顾海华,等.电子器件无损检测光学微扫描显微热成像系统[J].激光与红外,2013,43(7):779-784.
[34]杨丽媛.氮化镓基HEMT器件高场退化效应与热学问题研究[D].西安:西安电子科技大学,2013:69-104.
[35]Maize K,Pavlidis G,Heller E,et al. High Resolution Thermal Characterization and Simulation of Power Al Ga N/Ga N HEMTs Using Micro-Raman Thermography and 800 Picosecond Transient Thermoreflectance Imaging[C]//Compound Semiconductor Integrated Circuit Symposium. IEEE,2014:1-8.
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