一种精细调控PECVD晶圆温度的设计及其仿真分析
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摘要
为在等离子增强型化学气相沉积工艺过程中,实现对晶圆平均温度及温度分布轮廓的精细化调控。采用Comsol软件建立热流仿真模型,通过调节冷却气体的进气流量,调节晶圆平均温度;通过调节布气板环形气道宽度,调节晶圆的温度分布轮廓。结果表明,与不通冷却气体时相比,当气体流量为70 000m L/min时,晶圆表面平均温度从430℃降到预设温度220℃;当布气板环形气道宽度从中心到边缘分别为0.5mm、8.0mm、2.0mm、1.0mm、0.5mm时,晶圆表面温度分布变异系数小于2%。该方法实现了在工艺过程中对晶圆平均温度及分布轮廓的有效控制,为薄膜沉积工艺提供了均匀的热场分布。
It introduces a finely regulatory method of the wafer average temperature and the profile of the wafer temperature distribution in Plasma Enhanced Chemical Vapor Deposition( PECVD) process. It establishes the model in Comsol multi-physics. Based on the regulation of wafer average temperature with the inlet flow rate of cooling gas,it regulates the profile distribution of the wafer temperature according to the width of the annular air flue of the heater. Results indicate that wafer surface average temperature reduce from 430℃ to 220℃ when the inlet flow rate is 70000 m L / min,and the variable coefficient is less than 2% when the width of the annular air flue is 0. 5mm,8mm,2mm,1mm,0. 5mm. The wafer average temperature and the profile of the wafer temperature distribution are controlled in PECVD process using this method,which provides a proper temperature distribution for deposition. This method is also suitable for other equipment which needs a finely regulation of temperature.
It introduces a finely regulatory method of the wafer average temperature and the profile of the wafer temperature distribution in Plasma Enhanced Chemical Vapor Deposition( PECVD) process. It establishes the model in Comsol multi-physics. Based on the regulation of wafer average temperature with the inlet flow rate of cooling gas,it regulates the profile distribution of the wafer temperature according to the width of the annular air flue of the heater. Results indicate that wafer surface average temperature reduce from 430℃ to 220℃ when the inlet flow rate is 70000 m L / min,and the variable coefficient is less than 2% when the width of the annular air flue is 0. 5mm,8mm,2mm,1mm,0. 5mm. The wafer average temperature and the profile of the wafer temperature distribution are controlled in PECVD process using this method,which provides a proper temperature distribution for deposition. This method is also suitable for other equipment which needs a finely regulation of temperature.
引文
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[2]亢喆,黎威志,袁凯,等.PECVD淀积Si O2薄膜工艺研究[J].微处理机,2010(1):23-26.
[3]Trott W M,Rader D J,Castaeda J N,et al.Measurement of Gas-Surface Accommodation[C]//26th International Symposium on Rarefied Gas Dynamics,JUL,20-25,2008,Kyoto,JAPAN.New York:AIP Publishing,2009:621-628.
[4]Park J H,Baek S W.Investigation of influence of thermal accommodation on oscillating micro-flow[J].International Journal of Heat and Mass Transfer,2004,47(6):1313-1323.
[5]Prabha S K,Sathian S P,Computational study of thermal dependence of accommodation coefficients in a nano-channel and the prediction of velocity profiles[J].Computers&Fluids,2012,68:47-53.
[6]Baek J,Kim Y,Lee J,et al.Characteristics of thermal-flow fields in a PECVD reactor with various operating conditions[J].Journal of the Korean Physical Society,2007,51(3):1113-1118.
[7]王福军.计算流体动力学分析:CFD软件原理与应用[M].北京:清华大学出版社有限公司,2004.