PECVD法低温制备二氧化硅薄膜(英文)
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摘要
针对金属层间介质以及MEMS等对氧化硅薄膜的需求,介绍了采用等离子增强型化学气相沉积(PECVD)技术,以SiH4和N2O为反应气体,低温制备SiO2薄膜的方法.利用椭偏仪和应力测试系统对制得的SiO2薄膜的厚度、折射率、均匀性以及应力等性能指标进行了测试,探讨了射频功率、反应腔室压力、气体流量比等关键工艺参数对SiO2薄膜性能的影响.结果表明:SiO2薄膜的折射率主要由N2O/SiH4的流量比决定,而薄膜均匀性主要受电极间距以及反应腔室压力的影响.通过优化工艺参数,在低温260℃下制备了折射率为1.45～1.52、均匀性为±0.64%、应力在-350～-16MPa可控的SiO2薄膜.采用该方法制备的SiO2薄膜均匀性好、结构致密、沉积速率快、沉积温度低且应力可控,可广泛应用于集成电路以及MEMS器件中.
To meet the demand of inter-metal dielectric(IMD) layers and micro electro mechanical systems(MEMS),silicon dioxide(SiO2) films were deposited by plasma enhanced chemical vapor deposition(PECVD) at low temperature with silane(SiH4) and nitrous oxide(N2O) as precursor gases.The ellipsometer and stress measurement system were used to test the thickness,refractive index,uniformity and stress of the SiO2 film fabricated,and the effects of ratio frequency(RF) power,chamber pressure and N2O/SiH4 flow ratio on the properties of SiO2 film were studied.The results show that the refractive index of SiO2 film is mainly determined by N2O/SiH4 flow ratio and the uniformity of the film is influenced by the distance between electrodes and the chamber pressure.Moreover,by optimizing the process parameters,the SiO2 films were deposited at 260 ℃,with the refractive index measured as 1.45—1.52,the uniformity of ±0.64%,and the stress effectively controlled within-350—-16 MPa.The deposited SiO2 films have good uniformity,compact structure,high deposition rate,low deposition temperature and controllable stress,which can be widely used in integrated circuit(IC) and MEMS devices.
To meet the demand of inter-metal dielectric(IMD) layers and micro electro mechanical systems(MEMS),silicon dioxide(SiO2) films were deposited by plasma enhanced chemical vapor deposition(PECVD) at low temperature with silane(SiH4) and nitrous oxide(N2O) as precursor gases.The ellipsometer and stress measurement system were used to test the thickness,refractive index,uniformity and stress of the SiO2 film fabricated,and the effects of ratio frequency(RF) power,chamber pressure and N2O/SiH4 flow ratio on the properties of SiO2 film were studied.The results show that the refractive index of SiO2 film is mainly determined by N2O/SiH4 flow ratio and the uniformity of the film is influenced by the distance between electrodes and the chamber pressure.Moreover,by optimizing the process parameters,the SiO2 films were deposited at 260 ℃,with the refractive index measured as 1.45—1.52,the uniformity of ±0.64%,and the stress effectively controlled within-350—-16 MPa.The deposited SiO2 films have good uniformity,compact structure,high deposition rate,low deposition temperature and controllable stress,which can be widely used in integrated circuit(IC) and MEMS devices.
引文
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[2]Lee J Y,Glunz S W.Investigation of various surface passi-vation schemes for silicon solar cells[J].Solar Energy Mat-erials&Solar Cells,2006,90(1):82-92.
[3]Larionova Y,Harder N-P,Brendel,R.Effect of SiN depo-sition temperature on surface passivation of n-type Cz sili-con substrates using thermal-SiO 2/PECVD-SiN stacks[C]//25th European Photovoltaic Solar Energy Conference.Val-encia,Spain,2010:1-3.
[4]Rodriguez J A,Dorminguez C,Munoz F J,et al.Mechani-cal properties of PECVD silicon oxide films suitable for in-tegrated optics applications[C]//Proceedings of SPIE.Hou-ghton,USA,2000,3953:141-149.
[5]Kitova S,Youroukov S,Babeva Tz,et al.Argon ion acti-vated deposition of SiO 2 film[J].Optoelectronics and Adva-nced Materials,2005,7(5):2613-2618.
[6]Mack Sebastian,Wolf Andreas,Brosinsky Christoph,et al.Silicon surface passivation by thin thermal oxide/PECVD layer stack systems[J].IEEE Journal of Photovoltaics,2011,1(2):135-145.
[7]Jagadeesha T,Louis Kim,Joseph Gonsalvis,et al.Devel-opment and characterization of undoped silicon glass(USG)using chemical vapour deposition[J].International Journal of Engineering Science and Technology(IJEST),2011,3(2):797-804.
[8]Madocks J,Seaman W,George MA,et al.Plasma en-hanced chemical vapor deposition(PECVD)for large area applications[C]//53rd Society of Vacuum Coaters Annual Technical Conference.Orlando,USA,2010:1-8.
[9]Wei Guohua,Varghese Sony,Beaman Kevin.A compre-hensive study on nanomechanical properties of various SiO 2-based dielectric films[C]//8th IEEE Workshop on Micro-Electronics and Electron Devices.Boise,USA,2010:22-25.
[10]Zhong Chuanjie,Tanaka Hiroaki,Sugawa Shigetoshi,et al.Improvement of the electrical properties of PECVD silicon oxide using high-density and low-ion-energy plasma post-treatment[J].Non-Crystalline Solids,2005,351(27/28/29):2232-2237.
[11]Gore S P,Funde A M,Salve T S,et al.Properties of sili-con dioxide films prepared using silane and oxygen feeds by PECVD at low power plasma[J].J Nano-Electron Phys,2011,3(1):370-375.
[12]Bais B,Ghafar B A,Majlis B Y.A uniformity study of PECVD SiO 2 using IPL2000E/D[C]//ICSE2000Pro-ceedings.Ireland,2000:217-223.
[13]Kang Zhe,Li Weizhi,Yuan Kai,et al.Study of SiO 2 thin film deposition by PECVD[J].Microprocessors,2010,31(1):23-26(in Chinese).
[14]Quirk Michael,Serda Julian.Semiconductor Manufacturing Technology[M].Han Zhengsheng trans.Beijing,China:Publishing House of Electronics Industry,2009(in Chinese).
[15]Iliescu Ciprian,Wei Jiashen,Ong Poh Lam,et al.Low stress PECVD SiNx process for biomedical application[C]//Semiconductor Conference.Sinaia,Romania,2007:139-142.
[16]Lu Wenlong,Luo Zhongzi,He Xi,et al.Applied research on SiO 2 deposited by PECVD[J].Journal of Functional Ma-terials and Device,2008,14(1):33-37(in Chinese).
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