高频光电导法测量硅晶体载流子寿命的深度分析
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摘要
高频光电导测量硅单晶寿命的方法在国内半导体材料行业广泛使用,经过长期的实践积累了丰富的经验。本文试图就方法原理、仪器性能要求、测试结果的处理以及如何提高测量的重复性进行了深入分析。
The method of measuring the lifetime of silicon single crystal by high frequency photoconductivity is widely used in China's semiconductor materials industry. It has accumulated rich experience after long-term practice. This paper attempts to analyze the principle of the method, the performance requirements of the instrument, the processing of the test results and how to improve the repeatability of the measurement.
The method of measuring the lifetime of silicon single crystal by high frequency photoconductivity is widely used in China's semiconductor materials industry. It has accumulated rich experience after long-term practice. This paper attempts to analyze the principle of the method, the performance requirements of the instrument, the processing of the test results and how to improve the repeatability of the measurement.
引文
[1]SEMI MF28 TEST METHODS FOR MINORITY CARRIERLIFETIME IN BULK GERMANIUM AND SILICON BYMEASUREMENT OF PHOTOCONDUCTIVITY DECAY.
[2]W.R.Runyan.Silicon Semiconductor Technology.McGraw-Hill.New York,1965.
[3]阀端麟,赵榕椿,姚野,等.高频1.09μm红外光电导衰减法测试硅单晶非平衡载流子寿命[J].浙江大学学报,1985,19(2).
[4]SEMI MF1535 TEST METHOD FOR CARRIER RECOMB-INATION LIFETIME IN SILICON WAFERS BY NON-CONTACT MEASUREMENT OF PHOTOCONDUCTIVITYDECAY BY MICROWAVE REFLECTANCE.
[5]孙以材.半导体测试技术[M].北京:冶金工业出版社,1984.
[6]王昕,李俊生,田蕾,等.半绝缘半导体电阻率无接触测试设备的研究[J].仪器仪表用户,2018,25(2).
[2]W.R.Runyan.Silicon Semiconductor Technology.McGraw-Hill.New York,1965.
[3]阀端麟,赵榕椿,姚野,等.高频1.09μm红外光电导衰减法测试硅单晶非平衡载流子寿命[J].浙江大学学报,1985,19(2).
[4]SEMI MF1535 TEST METHOD FOR CARRIER RECOMB-INATION LIFETIME IN SILICON WAFERS BY NON-CONTACT MEASUREMENT OF PHOTOCONDUCTIVITYDECAY BY MICROWAVE REFLECTANCE.
[5]孙以材.半导体测试技术[M].北京:冶金工业出版社,1984.
[6]王昕,李俊生,田蕾,等.半绝缘半导体电阻率无接触测试设备的研究[J].仪器仪表用户,2018,25(2).