Preparation of ScAlN films as a function of power density on Si and flexible substrate by dc reactive magnetron sputtering

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• 作者：Xiaomei Li ; Yixi Yang ; Dong Zhou…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：27
• 期：1
• 页码：171-176
• 全文大小：1,088 KB
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• 作者单位：Xiaomei Li (1) (2)
  Yixi Yang (1) (2)
  Dong Zhou (1) (2)
  Chengtao Yang (1) (2)
  Fan Feng (1) (2)
  Junsong Yang (1) (2)
  Qijun Hu (1) (2)
  
  1. University of Electronic Science and Technology of China, UESTC, Chengdu, 610000, China
  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, 610000, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

Sc doped AlN (ScAlN) films were prepared by DC reactive magnetron sputtering. The crystal quality, the resistivity and the leakage current of ScAlN thin films grown on Si (100) and C276 alloy substrates at various power density from 1.16 to 2.10 W cm−2 have been investigated. According to the research, the crystal quality of ScAlN film first increases and then decreases, reaching the best crystalline state at 1.58 and 1.79 W cm−2 prepared on Si and alloy substrate respectively. The resistivity first increases to a maximum value of 3.71 × 1012 and 3.50 × 1012 Ω cm, respectively, and then decreased with the power density increasing. The minimum value of leakage current are 0.25 × 10−8 and 0.32 × 10−8 A, respectively.