Ion-Beam-Directed Self-Ordering of Ga Nanodroplets on GaAs Surfaces

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• 作者：Xingliang Xu ; Jiang Wu ; Xiaodong Wang ; Mingliang Zhang…
• 关键词：Focused ion beam ; Nanofabrication ; Self ; assembly ; Droplet epitaxy
• 刊名：Nanoscale Research Letters
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：11
• 期：1
• 全文大小：708 KB
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• 作者单位：Xingliang Xu (1) (2) (3) (4)
  Jiang Wu (1) (5)
  Xiaodong Wang (4)
  Mingliang Zhang (4)
  Juntao Li (2) (3)
  Zhigui Shi (2) (3)
  Handong Li (1)
  Zhihua Zhou (1)
  Haining Ji (1)
  Xiaobin Niu (1)
  Zhiming M. Wang (1) (4)
  
  1. Institute of Fundamental and Frontier Science, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People’s Republic of China
  2. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People’s Republic of China
  3. Research Center for Microsystems and Terahertz, China Academy of Engineering Physics, Mianyang, 621999, People’s Republic of China
  4. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, People’s Republic of China
  5. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK
  
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X

文摘

Ordered nanodroplet arrays and aligned nanodroplet chains are fabricated using ion-beam-directed self-organization. The morphological evolution of nanodroplets formed on GaAs (100) substrates under ion beam bombardment is characterized by scanning electron microscopy and atomic force microscopy. Ordered Ga nanodroplets are self-assembled under ion beam bombardment at off-normal incidence angles. The uniformity, size, and density of Ga nanodroplets can be tuned by the incident angles of ion beam. The ion beam current also plays a critical role in the self-ordering of Ga nanodroplets, and it is found that the droplets exhibit a similar droplet size but higher density and better uniformity with increasing the ion beam current. In addition, more complex arrangements of nanodroplets are achieved via in situ patterning and ion-beam-directed migration of Ga atoms. Particularly, compared to the destructive formation of nanodroplets through direct ion beam bombardment, the controllable assembly of nanodroplets on intact surfaces can be used as templates for fabrication of ordered semiconductor nanostructures by droplet epitaxy. Keywords Focused ion beam Nanofabrication Self-assembly Droplet epitaxy