Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition
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- 作者：Haoran Zhang (1)
Yanhui Zhang (1)
Bin Wang (2)
Zhiying Chen (1)
Yanping Sui (1)
Yaqian Zhang (1)
Chunmiao Tang (1)
Bo Zhu (1)
Xiaoming Xie (1)
Guanghui Yu (1)
Zhi Jin (3)
Xinyu Liu (3)
1. State Key Laboratory of Functional Materials for Informatics ; Shanghai Institute of Microsystem and Information Technology ; Chinese Academy of Sciences ; 865 Changning Road ; Shanghai ; 200050 ; People鈥檚 Republic of China
2. School of Physics and Optoelectronic Technology ; Dalian University of Technology ; 2 Linggong Road ; Dalian ; 116024 ; People鈥檚 Republic of China
3. Microwave Devices and Integrated Circuits Department ; Institute of Microelectronics ; Chinese Academy of Sciences ; 3 West Beitucheng Road ; Beijing ; 100029 ; People鈥檚 Republic of China - 关键词：Graphene ; CVD ; hydrogen ; growth rate ; domain size
- 刊名：Journal of Electronic Materials
- 出版年：2015
- 出版时间：January 2015
- 年：2015
- 卷：44
- 期：1
- 页码：79-86
- 全文大小：1,352 KB
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- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials
Electronics, Microelectronics and Instrumentation
Solid State Physics and Spectroscopy - 出版者：Springer Boston
- ISSN：1543-186X
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