Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

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• 作者：Shiwei Song (1)
  Yang Liu (1)
  Hongwei Liang (1) (2)
  Dechao Yang (3)
  Kexiong Zhang (1)
  Xiaochuan Xia (1)
  Rensheng Shen (1)
  Guotong Du (1) (3)
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2013
• 出版时间：August 2013
• 年：2013
• 卷：24
• 期：8
• 页码：2923-2927
• 全文大小：337KB
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• 作者单位：Shiwei Song (1)
  Yang Liu (1)
  Hongwei Liang (1) (2)
  Dechao Yang (3)
  Kexiong Zhang (1)
  Xiaochuan Xia (1)
  Rensheng Shen (1)
  Guotong Du (1) (3)
  
  1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, People’s Republic of China
  2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, People’s Republic of China
  3. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130023, People’s Republic of China
  

文摘

Improved structural quality and tensile stress releasing were realized in GaN thin films grown on 6H–SiC by metal organic chemical vapor deposition using an in situ porous SiNx interlayer. The SiNx was formed in situ in the growth chamber by simultaneous flow of diluted silane and ammonia, leading to the formation of a randomly distributed mask layer and induced lateral overgrowth similar to conventional epitaxial lateral overgrowth of GaN. The full width at half maximum (FWHM) of X-ray diffraction peaks decreases dramatically by the SiNx interlayer, indicating an improved crystalline quality. Also, it was found that the biaxial tensile stress in the GaN film was significantly reduced by in situ SiNx interlayer from Raman spectra. Low temperature photoluminescence spectra exhibited a narrower FWHM by the SiNx interlayer.