Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications

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• 作者：Hyeonggeun Yu ; Zhipeng Dong ; Jing Guo ; Doyoung Kim ; Franky So
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：April 27, 2016
• 年：2016
• 卷：8
• 期：16
• 页码：10430-10435
• 全文大小：418K
• 年卷期：0
• ISSN：1944-8252

文摘

Direct integration of a vertical organic field-effect transistor (VOFET) and an optoelectronic device offers a single stacked, low power optoelectronic VOFET with high aperture ratios. However, a functional optoelectronic VOFET could not be realized because of the difficulty in fabricating transparent source and gate electrodes. Here, we report a VOFET with an on/off ratio up to 10⁵ as well as output current saturation by fabricating a transparent gate capacitor consisting of a perforated indium tin oxide (ITO) source electrode, HfO₂ gate dielectric, and ITO gate electrode. Effects of the pore size and the pore depth within the porous ITO electrodes on the on/off characteristic of a VOFET are systematically explained in this work. By combining a phosphorescent organic light-emitting diode with an optimized VOFET structure, a vertical organic light-emitting transistor with a luminance on/off ratio of 10⁴ can be fabricated.