Vapor-Phase Atomic Layer Deposition of Co9S8 and Its Application for Supercapacitors

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• 作者：Hao Li ; Yuanhong Gao ; Youdong Shao ; Yantao Su ; Xinwei Wang
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6689-6695
• 全文大小：434K
• ISSN：1530-6992

文摘

Atomic layer deposition (ALD) of cobalt sulfide (Co₉S₈) is reported. The deposition process uses bis(N,N鈥?diisopropylacetamidinato)cobalt(II) and H₂S as the reactants and is able to produce high-quality Co₉S₈ films with an ideal layer-by-layer ALD growth behavior. The Co₉S₈ films can also be conformally deposited into deep narrow trenches with aspect ratio of 10:1, which demonstrates the high promise of this ALD process for conformally coating Co₉S₈ on high-aspect-ratio 3D nanostructures. As Co₉S₈ is a highly promising electrochemical active material for energy devices, we further explore its electrochemical performance by depositing Co₉S₈ on porous nickel foams for supercapacitor electrodes. Benefited from the merits of ALD for making high-quality uniform thin films, the ALD-prepared electrodes exhibit remarkable electrochemical performance, with high specific capacitance, great rate performance, and long-term cyclibility, which highlights the broad and promising applications of this ALD process for energy-related electrochemical devices, as well as for fabricating complex 3D nanodevices in general.