Electrical generation of heat in single-walled carbon nanotubes (SWNTs) and subsequent thermal transport into the surroundings can critically affect the design, operation, and re
liabi
lity of electronic and optoelectronic devices based on these materials. Here we investigate such heat generation and transport characteristics in perfectly a
ligned, horizontal arrays of SWNTs integrated into transistor structures. We present quantitative assessments of local thermometry at individual SWNTs in these arrays, evaluated using scanning Joule expansion microscopy. Measurements at different app
lied voltages reveal electronic behaviors, including metal
lic and semiconducting responses, spatial variations in diameter or chira
lity, and loca
lized defect sites. Analytical models, va
lidated by measurements performed on different device structures at various conditions, enable accurate, quantitative extraction of temperature distributions at the level of individual SWNTs. Using current equipment, the spatial resolution and temperature precision are as good as 100 nm and 0.7 K, respectively.
Keywords:
single-walled carbon nanotube; scanning Joule expansion microscopy; thermal expansion; heat generation; temperature distribution; resolution; lity+change&qsSearchArea=searchText">chirality change; defect